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VALLIAMMAI ENGINEERING COLLEGE
SRM Nagar, Kattankulathur – 603 203
DEPARTMENT
OF
ELECTRONICS AND INSTRUMENTATION ENGINEERING
QUESTION BANK
VII SEMESTER
EC6601-VLSI DESIGN
Regulation – 2013
Academic Year 2017– 2018
Prepared by
Mr.K.R.Ganesh, Assistant Professor (O.G ) / EIE
Ms. R. Umamaheswari, Assistant Professor (O.G) / EIE
UNIT I - MOS TRANSISTOR PRINCIPLE
NMOS and PMOS transistors, Process parameters for MOS and CMOS, Electrical properties of
CMOS circuits and device modeling, Scaling principles and fundamental limits, CMOS inverter
scaling, propagation delays, Stick diagram, Layout diagrams
PART – A
S.No Questions BT
Level Competence
1 Write the significance of lambda based design rules. BTL- 1 Remember
2 Define body bias effect. BTL- 1 Remember
3 What is threshold voltage? BTL- 1 Remember
4 What is Latch-up? How to prevent latch up? BTL- 1 Remember
5 State channel length modulation. Write down the equation for
describing the channel length modulation effect in NMOS
transistors.
BTL- 1 Remember
6 State the 3 modes involved in the operation of an
enhancement transistor.
BTL- 1 Remember
7 Express about propagation delay of a CMOS inverter. BTL- 2 Understand
8 Differentiate enhancement and depletion mode devices. BTL- 2 Understand
9 Give the types of scaling in CMOS technology. BTL- 2 Understand
10 Compare the effect of scaling on MOSFET device
parameters.
BTL- 2 Understand
11 Define noise margin. Illustrate how it can be obtained from
the transfer characteristics of a CMOS Inverter.
BTL- 3 Apply
12 Draw the equivalent circuit structure of LEVEL1 MOSFET
model in SPICE.
BTL- 3 Apply
13 Draw the DC transfer characteristics of CMOS inverter. BTL- 3 Apply
14 Point out the types of oxidation. BTL- 4 Analyze
15 Mention the advantages of EBL pattern generation. BTL- 4 Analyze
16 Mention the non-ideal IV effects of MOS transistor. BTL- 4 Analyze
17 Predict the factors influencing the drain current. BTL- 5 Evaluate
18 Compare CMOS and Bipolar technologies. BTL- 5 Evaluate
19 Develop a stick diagram for NAND gate. BTL- 6 Create
20 If the nominal threshold voltage of NMOS transistor in an
180nm process is 0.4V and doping level is 8x1017
cm-3
. What
is the body voltage?
BTL- 6 Create
PART B
1 (i) Describe the equation for source to drain current in the three
regions of operation of a MOS transistor and draw the VI
characteristics. (8)
(ii) Describe in detail about body effect and its effect in MOS
device. (8)
BTL-1 Remember
2 (i) Examine about the Non ideal I-V characteristics of MOS
transistor. (8)
(ii) Describe the important properties used for the estimation of
resistance in MOS resistance model. (8)
BTL-1 Remember
3 Describe the following concepts:
(i) Device model and device characterization (8)
(ii) SPICE based circuit simulation (8)
BTL-1 Remember
4 Describe about the need of scaling, scaling principles and
fundamental limits on CMOS inverter scaling. (16) BTL-1 Remember
5 Discuss about the lambda based design rules for NMOS and
CMOS transistors. (16) BTL-2 Understand
6 Discuss about the following MOS capacitance model: (4X4)
(i) Simple MOS capacitance model.
(ii) Detailed MOS gate capacitance model.
(iii) MOS device capacitance.
(iv) Detailed MOS diffusion capacitance model.
BTL-2 Understand
7 (i) Discuss the principles of constant field and lateral scaling.
Write the effects of the above scaling methods on the device
characteristics. (8)
(ii) Explain the DC transfer characteristics of a CMOS inverter
with necessary conditions for the different regions of operation.
(8)
BTL-2 Understand
8 (i) Explain the characteristics of CMOS inverter with its
transfer characteristics. (8)
(ii) Construct the layout for 2 input NAND and AND gates
using CMOS inverters. (8)
BTL-3
Apply
9 Draw the circuit layout and stick diagram for
(i) Two input XOR gate (8)
(ii) CMOS inverter (8)
BTL-3 Apply
10
Explain the operation of following MOS transistor:
(i) NMOS enhancement (8)
(ii) PMOS enhancement (8)
BTL-4 Analyze
11 (i) Explain the different steps involved in n-well CMOS
fabrication process with neat diagrams. (8)
(ii) Derive the noise margins for a CMOS inverter. (8)
BTL-4 Analyze
12 Explain in detail about second order effects of MOS transistor.
(16) BTL-4 Analyze
13 (i) Consider an NMOS having electron mobility of µn
=540cm2/V–Sec. Calculate the process
transconductance for the gate oxide thickness of 12 nm
and 8 nm. (8)
(ii) An nMOS transistor has the following parameters: gate
oxide thickness= 10nm, relative permittivity of gate
oxide=3.9, electron mobility= 520 cm2/V-sec, threshold
voltage= 0.7 V, permittivity of free space= 8.85 x 10-14
F/cm and (W/L)=8. Calculate the drain current when
(VGS = 2V and VDS =1.2 V) and also compute the gate
oxide capacitance per unit area. Note that W and L refer
to the width and length of the channel respectively.
(8)
BTL-5 Evaluate
14 Realize the function Y = (A + B + C)D using CMOS
compound gate. Draw the stick diagram and layout diagram.
(16)
BTL-6 Create
UNIT II - COMBINATIONAL LOGIC CIRCUITS
Examples of Combinational Logic Design, Elmore’s constant, Pass transistor Logic,
Transmission gates, static and dynamic CMOS design, Power dissipation – Low power design
principles
PART - A
S.No Questions BT
Level Competence
1 What is a transmission gate? BTL- 1 Remember
2 List the advantages of pass transistor. BTL- 1 Remember
3 Define Transistor sizing problem. BTL- 1 Remember
4 What are the advantages of using pseudo-nMOS gate instead
of full CMOS gate?
BTL- 1 Remember
5 State the types of power dissipation. BTL- 1 Remember
6 What are critical paths? BTL- 1 Remember
7 Give Elmore delay expression for propagation delay of an
inverter.
BTL- 2 Understand
8 Why is the transmission of logic 1 degraded as it passes
through a NMOS pass transistor?
BTL- 2 Understand
9 Write the expressions for the logical effort and parasitic delay
of n- input NOR gate.
BTL- 2 Understand
10 Estimate how dynamic power can be reduced. BTL- 2 Understand
11 Mention the two phases of operation in a dynamic CMOS
logic.
BTL- 3 Apply
12 Draw the symbol of transmission gate. Mention the
disadvantages of CMOS transmission gate.
BTL- 3 Apply
13 Mention the drawbacks of dynamic logic. BTL- 3 Apply
14 Prioritize the criteria needed for low power logic design. BTL- 4 Analyze
15 Point out the factors that produce dynamic power dissipation. BTL- 4 Analyze
16 Analyze about the factors that cause static power dissipation
in CMOS circuits.
BTL- 4 Analyze
17 Why single phase dynamic logic structure cannot be
cascaded? Justify.
BTL- 5 Evaluate
18 Realize OR and NOR logic function using differential cascade
voltage switch logic.
BTL- 5 Evaluate
19 Implement a 2:1 Multiplexer using pass transistor. BTL- 6 Create
20 Develop a 2-input XOR gate using transmission gates. BTL- 6 Create
PART-B
1 What are the sources of power dissipation in CMOS and
discuss various design techniques to reduce power dissipation
in CMOS? (16)
BTL-1 Remember
2 (i) Describe the properties and operation of dynamic CMOS
logic with neat diagram. (8)
(ii) List the various application of dynamic CMOS logic. (8)
BTL-1 Remember
3 (i)Explain the static and dynamic power dissipation in CMOS
circuits with necessary diagrams and expressions. (8)
(ii) Derive an nMOS inverter pair delay whose transistor size is
4:1. (8)
BTL-1 Remember
4 Describe the following concepts: (4x4)
(i) RC delay models.
(ii) Elmore delay model.
(iii) Linear delay model.
(iv) Logical effort delay model.
BTL-1 Remember
5 (i) Compare static and dynamic CMOS logic circuit with
example. (8)
(ii) Discuss about pseudo-nMOS gates with neat circuit
diagram. (8)
BTL-2 Understand
6 (i) Discuss about the principles of Low power logic design in
CMOS circuits. (8)
(ii) Realize the operation of ratioed circuits with neat diagram.
(8)
BTL-2
Understand
7 (i) Discuss in detail about the characteristics of CMOS
transmission gate. (8)
(ii) Express about delay estimation, logical effort and transistor
sizing with example. (8)
BTL-2
Understand
8 Draw and explain about realization of inverters and basic gates
using pass transistor logic. (16)
BTL-3 Apply
9 With neat sketch, illustrate the operation of pass transistor DC
characteristics. (16)
.BTL-3 Apply
10 (i) Describe the basic principle of operation of dynamic CMOS,
domino and NP domino logic with neat diagrams. (8)
(ii) Explain about DCVSL logic with suitable example. (8)
BTL-4 Analyze
11 (i) Explain the operation, important properties, advantages and
limitations of static CMOS design. (8)
(ii) Explain about the problem of charge sharing and the
methods to overcome it. (8)
BTL-4 Analyze
12 (i) Explain the domino and dual rail domino logic families with
neat diagrams. (8)
(ii) Explain the multiple output and zipper domino logic. (8)
BTL-4 Analyze
13 (i) Realize the following function using CMOS: (8)
(a) F (A, B, C) = A’BC + AB’C + ABC’
(b) Y= (A+B) (C+D)
(ii) Draw the static CMOS logic circuit for the following
expression: (8)
(a)
(b)
BTL- 5 Evaluate
14 (i) Design a D-latch using transmission gate. (8)
(ii)Design a 1-bit dynamic inverting and non-inverting register
using pass transistor. (8)
BTL- 6 Create
UNIT III- SEQUENTIAL LOGIC CIRCUITS
Static and Dynamic Latches and Registers, Timing issues, pipelines, clock strategies, Memory
architecture and memory control circuits, Low power memory circuits, Synchronous and
Asynchronous design
PART - A
S.No Questions BT
Level Competence
1 What are the timing parameters for electronic memories? BTL-1 Remember
2 List the timing metrics for sequential circuits. BTL-1 Remember
3 Tabulate the classification of semiconductor memory. BTL-1 Remember
4 Define clock jitter. BTL-1 Remember
5 What is clocked CMOS register? BTL-1 Remember
6 What are synchronizers? Enumerate its features. BTL-1 Remember
7 Differentiate combinational and sequential logic circuits. BTL-2 Understand
8 Is D-flip-flop applicable for counter applications? Why? BTL-2 Understand
9 Express time borrowing concepts in transparent latches. BTL-2 Understand
10 Estimate clock skew in synchronous design. BTL-2 Understand
11 Draw the Voltage Transfer Characteristics of two cascaded
inverters.
BTL 3 Apply
12 Mention the advantages of using a block address in memory
design.
BTL-3 Apply
13 Draw the block diagram of a Finite State Machine. BTL-3 Apply
14 Classify digital systems based on timing characteristics. BTL-4 Analyze
15 Point out the advantages of two phase clocking scheme. BTL-4 Analyze
16 Point out the concepts of pipelining. BTL-4 Analyze
17 Obtain the functional composition of a PLL. BTL-5 Evaluate
18 Compare and contrast synchronous design and asynchronous
design.
BTL-5 Evaluate
19 Develop a switch level schematic of multiplexer based NMOS
latch using NMOS only pass transistors.
BTL-6 Create
20 Design a one-transistor DRAM cell. BTL-6 Create
PART B
1 (i)Describe the architecture of an N-word memory. (8)
(ii) Describe the operation of various memory peripheral
circuitries. (8) BTL-1 Remember
2 (i) Describe the Bi-stability principle associated with static
latches and registers. (8)
(ii) Examine the differences between Static and Dynamic
Memory. (8)
BTL-1
Remember
3 (i) What are the different approaches to reduce power
dissipation in memories? (8)
(ii) What are the challenges involved in an asynchronous
design? Can these challenges be overcome using a self-timed
logic? (8)
BTL-1 Remember
4 (i) What is the drawback of transmission gate register? Explain
the various approaches to overcome it. (8)
(ii) Describe the operation of a Dynamic Transmission Gate
Edge Triggered Register. (8)
BTL-1 Remember
5 (i) Illustrate the impact of clock skew and jitter on the
performance of a sequential system (8)
(ii) Discuss about the basic concept of clock synthesis and
synchronization using Phase –Locked loop. (8)
BTL-2 Understand
6 (i) Distinguish various clocking strategies used in chip design.
(8)
(ii) How can one design a register that is insensitive to clock-
skew? (8)
BTL-2 Understand
7 (i) Summarize about the concept and implementation of
Synchronizer and arbiters. (8)
(ii) How can we build latches using multiplexers? Discuss their
operation in detail. (8)
BTL-2 Understand
8 (i) Mention about the common approaches for constructing an
edge triggered register. (8)
(ii) Explain the operation of master-slave based edge triggered
register. (8)
BTL-3 Apply
9 (i) Draw and explain the operation of conventional, pulsed and
resettable latches. (8)
(ii)Explain th operation of True single phase clocked register
with a neat diagram. (8)
BTL-3 Apply
10 Explain in detail about various static latches and registers.
(16) BTL-4 Analyze
11 Explain in detail various pipelining approaches to optimize
sequential circuits. (16) BTL-4 Analyze
12 (i) What kinds of failures are caused by clock overlap? (4)
(ii) Explain the various approaches adopted to overcome clock
overlap with neat schematics. (12)
BTL-4 Analyze
13 Explain the concepts of timing issues and pipelining.
(16) BTL-5 Evaluate
14 Explain the operation of Static SR flip flops built using NOR
and NAND gates. Also, derive the truth table for such an
implementation. (16)
BTL-6 Create
UNIT IV- DESIGNING ARITHMETIC BUILDING BLOCKS
Data path circuits, Architectures for ripple carry adders, carry look ahead adders, High speed
adders, accumulators, Multipliers, dividers, Barrel shifters, and speed and area trade off
PART - A
S.No Questions BT
Level Competence
1 What is meant by bit-sliced data path organization? BTL-1 Remember
2 List out the components of data path. BTL-1 Remember
3 What is the arithmetic structures derived from a full adder? BTL-1 Remember
4 Define Vector merging adder. BTL-1 Remember
5 Mention the principle of any one fast multiplier. BTL-1 Remember
6 List the uses of Clock gating. BTL-1 Remember
7 Give a neat sketch on Manchester carry gates. BTL-2 Understand
8 Express the inverting property of full adder. BTL-2 Understand
9 Determine the regularity of 4 X 4 barrel shifter. BTL-2 Understand
10 Give the applications of high speed adder. BTL-2 Understand
11 Draw the schematic for sleep transistors used on both supply
and ground. BTL-3 Apply
12 Mention the draw backs of a static adder circuit. BTL-3 Apply
13 Calculate the propagation delay of n-bit carry select adder. BTL-3 Apply
14 Compare constant throughput and variable throughput in
active & leakage mode.
BTL-4
Analyze
15 Compare dadda multiplier and booth multiplier. BTL-4 Analyze
16 Select the method which is adopted to reduce power in sleep
mode. BTL-4 Analyze
17 Express Ripple carry adder using dot operator. BTL-5 Evaluate
18 Check whether barrel shifter is very useful in the designing of
arithmetic blocks. BTL-5 Evaluate
19 Create a partial product selection table using modified booth’s
recoding. BTL-6
Create
20 Generalize the Concept of logarithmic look ahead adder. BTL-6 Create
PART-B
1 (i) Describe ripple carry adder and derive the worst case delay
with example. (8)
(ii) Describe the inversion property of full adder. (8)
BTL-1 Remember
2 Explain the operation of a basic 4-bit adder; also Describe the
different approaches of improving the speed of adder.
(16)
BTL-1 Remember
3 Describe the implementation of a Manchester Carry chain
adder. (16) BTL-1 Remember
4 List the logic design considerations of binary adder and
explain the following types:
(i) Carry skip adder (8)
(ii) Carry save adder (8)
BTL-1 Remember
5 (i) Explain the concept of carry look ahead adder with neat
diagram. (8)
(ii) Discuss the details about speed and area trade off. (8)
BTL-2 Understand
6
(i) Describe the concept of monolithic and logarithmic look
ahead adder. (8)
(ii) Discuss the data paths in digital processor architectures.
(8)
BTL-2 Understand
7 (i) Discuss how power can be reduced in the standby mode in
the design of arithmetic unit. (8)
(ii) Describe in detail about various Run-time power
management schemes. (8)
BTL-2 Understand
8 (i) Demonstrate how to reduce the number of generated partial
products by half. (8)
(ii) Explain the methods to accumulate partial products in
array form. (8)
BTL-3 Apply
9 (i) What are the methods adopted to perform division in a
digital IC? Make a comparison between them. (8)
(ii) Describe the design approach adopted in a logarithmic
shifter. (8)
BTL-3 Apply
10 Classify circuit design considerations of full adder and
explain the following:
(i) Mirror adder (8)
(ii) Transmission gate adder (8)
BTL-4 Analyze
11 Explain the concept of modified Booth multiplier with a
suitable example. (16) BTL-4 Analyze
12 Design a 16 bit carry bypass and carry select adder and
discuss their features. (16) BTL-4 Analyze
13 Explain the operation of Booth multiplication with suitable
examples, And Justify how Booth algorithm speeds up the
multiplication process. (16)
BTL-5 Evaluate
14 Design a 4 X 4 array multiplier and write down the equation
for delay. (16) BTL-6 Create
UNIT V- IMPLEMENTATION STRATEGIES
Full custom and Semi-custom design, Standard cell design and cell libraries, FPGA building
block architectures, FPGA interconnect routing procedures.
PART - A
S.N
o Questions
BT
Level Competence
1 What is the standard cell based ASIC design? BTL-1 Remember
2 What is meant by CBIC? BTL-1 Remember
3 Name the elements in configuration logic block. BTL-1 Remember
4 What is an anti-fuse? State its merits and demerits. BTL-1 Remember
5 List out three main parts of FPGA & what is PMS? BTL-1 Remember
6 Define OEM. BTL-1 Remember
7 Distinguish between PAL and PLA. BTL-2 Understand
8 State the features of full custom design. BTL-2 Understand
9 What are feed through cells? State its uses. BTL-2 Understand
10 Give a note on tape out of chip. BTL-2 Understand
11 Mention the objectives and goals of System Partitioning. BTL-3 Apply
12 Illustrate the advantages and disadvantages of FPGA compared
to ASIC. BTL-3 Apply
13 Show the advantages and disadvantages of cell based design
methodology. BTL-3 Apply
14 Differentiate between Altera MAX 9000 and Altera FLEX
interconnects architecture. BTL-4 Analyze
15 Compare FPGA and CPLD. BTL-4 Analyze
16 Compare between fine-grain and coarse-grain architecture of
FPGA. BTL-4 Analyze
17 Obtain the different types of interconnections present in Xilinx
FPGA. BTL-5
Evaluate
18 Evaluate speed grading. BTL-5 Evaluate
19 Integrate the concept of segmented Channel routing. BTL-6 Create
20 Design a primitive gate array cell. BTL-6 Create
PART B
1 Describe the following types of ASIC:
(i) Full custom ASIC (8)
(ii) Semi-custom ASIC (8)
BTL-1 Remember
2 Describe briefly about Gate-Array based ASIC’s design with
neat diagrams. (16) BTL-1 Remember
3 (i) Explain the Configurable Logic Block and IO block of
Xilinx XC4000 FPGA. (8)
(ii) List the features of Xilinx XC4000 FPGA. (8)
BTL-1 Remember
4 (i) Explain about building block architecture of FPGA. (8)
(ii) Write short notes on routing procedures involved in FPGA
interconnect. (8)
BTL-1 Remember
5 Discuss the different types of programming technology used in
FPGA design. (16) BTL-2 Understand
6 With neat sketch explain the CLB, IOB and programmable
interconnects of an FPGA device. (16) BTL-2 Understand
7 Briefly explain the semi-custom ASIC with its classification.
(16) BTL-2 Understand
8 (i) Illustrate the concepts of Mask programmable arrays. (8)
(ii) Identify the components involved in constructing a voltage
output macro cell. (8)
BTL-3 Apply
9 Define and explain briefly about different approaches of
programmable wiring with neat diagrams. (16) BTL-3 Apply
10 Explain about different types of ASIC with neat diagram.
(16) BTL-4 Analyze
11 With design flow, explain the sequence of steps involved in the
ASIC design process. (16) BTL-4 Analyze
12 Explain the interconnect architectures of the following:
(i) Altera Max series (8)
(ii) Xilinx XC40XX series (8)
BTL-4 Analyze
13 (i) Compare and contrast about EPROM and EEPROM
technology. (8)
(ii) Summarize about programming of Programmable Array
Logic. (PAL) (8)
BTL-5 Evaluate
14 (i) Design an LUT-Based Logic Cell. (8)
(ii) Discuss the Classification of prewired arrays. (8) BTL-6 Create
***************