GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER … · 2019. 6. 5. · v02.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz General Description Features

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or [email protected]

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HMC952v02.0813

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz

General Description

Features

Functional DiagramThe hmC952 is a four-stage GaAs phemT mmiC 2 watt power Amplifier with an integrated temperature compensated on-chip power Detector which operates between 9 and 14 Ghz. The hmC952 provides 36 dB of gain and +35 dBm of saturated output power at 28% pAe from a +6V power supply. The hmC952 exhibits excellent linearity and is optimized for high capacity point-to-point and point-to-multi-point radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna. All data is taken with the chip in a 50 ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31mm (12 mil) length.

+35 dBm pout @ 28% pAe

high output ip3: +42 dBm

high Gain: 36 dB

DC supply: +6V @ 1400 mA

no external matching required

Die size: 3.46 x 1.73 x 0.1 mm

Electrical Specifications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4, Vdd5= +6V, Idd = 1400 mA [1]

Typical ApplicationsThe hmC952 is ideal for:

• point-to-point radios

• point-to-multi-point radios

• sATCom

parameter min. Typ. max. min. Typ. max. Units

frequency range 9 - 10 10 - 14 Ghz

Gain 34 37 33 36 dB

Gain Variation over Temperature 0.04 0.04 dB/ °C

input return loss 12 16 dB

output return loss 8 12 dB

output power for 1 dB Compression (p1dB) 31 34 31.5 34.5 dBm

saturated output power (psat) 35 35 dBm

output Third order intercept (ip3)[2] 41 42.5 dBm

Total supply Current (idd) 1400 1400 mA

[1] Adjust Vgg between -2 to 0V to achieve idd = 1400 mA typical.

[2] measurement taken at pout / Tone = +20 dBm

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D



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HMC952v02.0813


Input Return Loss vs. Temperature Output Return Loss vs. Temperature

Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature

P1dB vs. Temperature P1dB vs. Supply Voltage [1]

-30

-20

-10

0

10

20

30

40

8 9 10 11 12 13 14 15 16

S21S11S22

FREQUENCY (GHz)

RE

SP

ON

SE

(dB

)

15

20

25

30

35

40

45

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

GA

IN (

dB)

-35

-30

-25

-20

-15

-10

-5

0

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

RE

TU

RN

LO

SS

(dB

)

-30

-25

-20

-15

-10

-5

0

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

RE

TU

RN

LO

SS

(dB

)

26

28

30

32

34

36

38

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

P1d

B (

dBm

)

26

28

30

32

34

36

38

9 10 11 12 13 14

5V6V7V

FREQUENCY (GHz)

P1d

B (

dBm

)

[1] 7V plot taken at idd= 1200 mA, 5V and 6V plots taken idd= 1400mA.





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Output IP3 vs. Supply Current, Pout/Tone = +20 dBm

Output IP3 vs. Temperature, Pout/Tone = +20 dBm

Psat vs. Supply Current (Idd)P1dB vs. Supply Current (Idd)

Psat vs. Temperature Psat vs. Supply Voltage [1]

26

28

30

32

34

36

38

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

Psa

t (dB

m)

26

28

30

32

34

36

38

9 10 11 12 13 14

5V6V7V

FREQUENCY (GHz)

Psa

t (dB

m)

26

28

30

32

34

36

38

9 10 11 12 13 14

1000 mA1100 mA1200 mA1300 mA1400 mA

FREQUENCY (GHz)

P1d

B (

dBm

)

26

28

30

32

34

36

38

9 10 11 12 13 14

1000 mA1100 mA1200mA1300mA1400mA

FREQUENCY (GHz)

Psa

t(dB

m)

30

32

34

36

38

40

42

44

46

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

IP3

(dB

m)

30

32

34

36

38

40

42

44

46

9 10 11 12 13 14

1000 mA1100 mA1200 mA1300 mA1400 mA

FREQUENCY (GHz)

IP3

(dB

m)






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Power Compression @ 9.5 GHz

Output IP3 vs. Supply Voltage, Pout/Tone = +20 dBm [1]

Output IM3 @ Vdd = +6V

Noise Figure vs Temperature

Output IM3 @ Vdd = +5V

30

32

34

36

38

40

42

44

46

9 10 11 12 13 14

5V6V7V

FREQUENCY (GHz)

IP3

(dB

m)

0

10

20

30

40

50

60

70

80

10 12 14 16 18 20 22 24

9.5 GHz10.5 GHz11.5 GHz12.5 GHz13.5 GHz

Pout/TONE (dBm)

IM3

(dB

c)

0

10

20

30

40

50

60

70

80

10 12 14 16 18 20 22 24


Pout/TONE (dBm)

IM3

(dB

c)

0

2

4

6

8

10

9 10 11 12 13 14

+25C+85C -55C

FREQUENCY (GHz)

NO

ISE

FIG

UR

E (

dB)

0

5

10

15

20

25

30

35

40

0

400

800

1200

1600

2000

2400

2800

3200

-20 -15 -10 -5 0 5

PoutGainPAE

Idd

Pou

t (dB

m),

Gai

n (d

B),

PA

E (

%)

Idd (mA

)

INPUT POWER (dBm)


Output IM3 @ Vdd = +7V [2]

[2] 7V plot taken at idd= 1200 mA.

0

10

20

30

40

50

60

70

80

10 12 14 16 18 20 22 24


Pout/TONE (dBm)

IM3

(dB

c)





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Gain & Power vs. Supply Voltage @ 11.5 GHz

Gain & Power vs. Supply Current @ 11.5 GHz

Reverse Isolation vs. Temperature


0

5

10

15

20

25

30

35

40

0

400

800

1200

1600

2000

2400

2800

3200

-20 -15 -10 -5 0 5

PoutGainPAE

Idd

Pou

t (dB

m),

Gai

n (d

B),

PA

E (

%)

Idd (mA

)

INPUT POWER (dBm)

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

11 12 13 14 15 16 17

+25C+85C -55C

FREQUENCY (GHz)

ISO

LAT

ION

(dB

)Detector Voltage vs. Frequency & Temperature

20

24

28

32

36

40

1000 1050 1100 1150 1200 1250 1300 1350 1400

GAINP1dBPsat

Idd (mA)

Gai

n (d

B),

P1d

B (

dBm

), P

sat (

dBm

)

20

24

28

32

36

40

5 5.2 5.4 5.6 5.8 6

GAINP1dBPsat

Vdd (V)

Gai

n (d

B),

P1d

B (

dBm

), P

sat (

dBm

)

0.001

0.01

0.1

1

10

-10 -6 -2 2 6 10 14 18 22 26 30 34

10 GHz +25C10 GHz +85C10 GHz -40C12 GHz +25C12 GHz +85C12 GHz -40C

OUTPUT POWER (dBm)

Vre

f-V

det (

V)


0

5

10

15

20

25

30

35

40

0

400

800

1200

1600

2000

2400

2800

3200

-20 -15 -10 -5 0 5

PoutGainPAE

Idd

Pou

t (dB

m),

Gai

n (d

B),

PA

E (

%)

Idd (mA

)

INPUT POWER (dBm)





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Power Dissipation

0

2

4

6

8

10

12

-15 -12 -9 -6 -3 0 3 6

9 GHz10 GHz11 GHz12 GHz13 GHz14 GHz

PO

WE

R D

ISS

IPA

TIO

N (

W)

INPUT POWER (dBm)

Absolute Maximum RatingsDrain Bias Voltage (Vdd) +8V

Gate Bias Voltage (Vgg) -3 ~ 0 Vdc

rf input power (rfin) +24 dBm

Channel Temperature 150 °C

Continuous pdiss (T= 85 °C)(derate 133 mw/°C above 85 °C)

8.6 w

Thermal resistance(channel to die bottom)

7.5 °C/w

storage Temperature -65 to +150 °C

operating Temperature -55 to +85 °C

esD sensitivity (hBm) Class 0, passed 150V

Typical Supply Current vs. Vdd

Vdd (V) idd (mA)

+5.0 1400

+6.0 1400

+7.0 1200

Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1400 mA at +6V. Vgg adjusted to achieve Idd = 1200 mA at +7V

eleCTrosTATiC sensiTiVe DeViCeoBserVe hAnDlinG preCAUTions





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Outline Drawing

noTes:1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004”3. TYpiCAl BonD pAD is .0032” sQUAre4. TYpiCAl rf BonD pAD is .0039 X .0076” 5. BACKsiDe meTAlliZATion: GolD6. BonD pAD meTAlliZATion: GolD7. BACKsiDe meTAl is GroUnD.8. ConneCTion noT reQUireD for UnlABeleD BonD pADs.9. oVerAll Die siZe ± .002”

Die Packaging Information [1]

standard Alternate

Gp-1 (Gel pack) [2]

[1] Refer to the “Packaging Information” section for die packaging dimensions.[2] For alternate packaging information contact Hittite Microwave Corporation.





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Pad Descriptionspad number function Description interface schematic

1 rfin This pad is DC coupled and matched to 50 ohms.

2 - 5, 9Vdd1, Vdd2, Vdd3,

Vdd4, Vdd5Drain bias voltage for amplifier. external bypas capacitors

of 100pf, 10nf, and 4.7uf are required.

6 rfoUT This pad is DC coupled and matched to 50 ohms.

7 VdetDC voltage representing rf output power rectified by diode which is biased through an external resistor. see applica-

tion circuit.

8 VrefDC bias of diode biased through external resistor, used for temperature compensation of Vdet. see application circuit

10 - 12 Vgg3, Vgg2, Vgg1Gate control for amplifier. external bypass capacitors of

100pf and 100nf are required

Die Bottom GnD Die bottom must be connected to rf/DC ground.





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HMC952v02.0813


Application Circuit





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Assembly Diagram





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Mounting & Bonding Techniques for Millimeterwave GaAs MMICsThe die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note).

50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom-plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2).

microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

Handling PrecautionsFollow these precautions to avoid permanent damage.

Storage: All bare die are placed in either waffle or Gel based esD protec-tive containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment.

Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity: follow esD precautions to protect against > ± 250V esD strikes.

Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.

General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

MountingThe chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment.

epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire BondingBall or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.254mm (0.010”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 2.

0.150mm (0.005”) ThickMoly Tab

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.127mm (0.005”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 1.





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Notes:



Documents

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER … · 2019. 6. 5. · v02.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 9 - 14 GHz General Description Features