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AMPLIFIERS || GaAs MMIC PHEMT 408.526.1100 ◊ 408.526.1105 [email protected] ◊ www.eclipsemdi.com 2095-60 Ringwood Ave ◊ San Jose, CA 95131 1 - 5 Eclipse Microdevices EMD-1725 is a 40 GHz GaAs MMIC PHEMPT Distributed general purpose Low Noise Ampliﬁer. This LNA has a Small signal gain of 15 dB and is ideal for applicaons that requires a typical P1dB output power of +15 dBm at 36 GHz, while requiring only 110mA from a + 8Volt supply. The EMD-1725 has a slightly posive gain slope above 15 GHz which is ideal for most commercial and industrial applicaons. The device comes in a small die size of 2.3mm X 1.55mm X 0.1mm thick. The device requires an oﬀ chip choke & blocking caps for broadband operaon. ELECTRICAL SPECIFICATION @ +25 °C, Vdd=8V,Vgg=-.43V, Ids=108mA Parameters SPECIFICATION FREQ. (GHz) MIN TYPICAL MAX Units Gain 2.0 15.0 25.0 36.0 11.8 12.2 13.0 14.5 12.0 12.5 13.5 15.5 dB dB dB dB Gain Flatness dc to 20.0 20.0 to 40.0 ±0.20 ±1.00 ±0.40 ±1.50 dB dB Gain Variation Over Temperature 0.02 dB/°C Noise Figure 2.0 15.0 25.0 36.0 4.8 3.5 4.7 6.8 dB dB dB dB Input Return Loss(S11) 11 dB Output Return Loss(S22) 10 dB 1 dB Compression Point(P1dB) 2.0 15.0 25.0 36.0 19.0 19.0 20.5 15.5 dBm dBm dBm dBm Saturated Output Power(Psat) 2.0 15.0 25.0 36.0 20.0 21.0 23.0 17.5 dBm dBm dBm dBm Third-Order Output Intercept Point +28 +33 dBm

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AMPL
IFIE
RS
|| G
aAs
MM
IC P
HEM
T
408.526.1100 408.526.1105
[email protected] www.eclipsemdi.com
2095-60 Ringwood Ave San Jose, CA 95131
1 - 5
Eclipse Microdevices EMD-1725 is a 40 GHz GaAs MMIC PHEMPT Distributed general purpose Low Noise Amplifier. This LNA has a Small signal gain of 15 dB and is ideal for applications that requires a typical P1dB output power of +15 dBm at 36 GHz, while requiring only 110mA from a + 8Volt supply. The EMD-1725 has a slightly positive gain slope above 15 GHz which is ideal for most commercial and industrial applications. The device comes in a small die size of 2.3mm X 1.55mm X 0.1mm thick. The device requires an off chip choke & blocking caps for broadband operation.
ELECTRICAL SPECIFICATION @ +25 C, Vdd=8V,Vgg=-.43V, Ids=108mA
Parameters SPECIFICATION
FREQ. (GHz)
MIN
TYPICAL
MAX
Units
Gain
2.0 15.0 25.0 36.0
11.8 12.2 13.0 14.5
12.0 12.5 13.5 15.5
dB dB dB dB
Gain Flatness dc to 20.0 20.0 to 40.0 0.20 1.00
0.40 1.50
dB dB
Gain Variation Over Temperature
0.02 dB/C
Noise Figure
2.0 15.0 25.0 36.0
4.8 3.5 4.7 6.8
dB dB dB dB
Input Return Loss(S11) 11 dB
Output Return Loss(S22) 10 dB
1 dB Compression Point(P1dB)
2.0 15.0 25.0 36.0
19.0 19.0 20.5 15.5
dBm dBm dBm dBm
Saturated Output Power(Psat)
2.0 15.0 25.0 36.0
20.0 21.0 23.0 17.5
dBm dBm dBm dBm
Third-Order Output Intercept Point +28 +33
dBm
1725 - DC-36GHz Distributed Amplifier - Unit A
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30 35 40 45 50
Frequency/GHz
Res
pons
e/dB
S11/dBS21/dBS22/dB
Vdd=8V; Vgg = -0.43V; Ids=108mA
1725 - Noise Figure Data
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42
Frequency/GHz
NFm
in/d
B
NF Meter Gain/dB 8V 112mA
Measured Noise Figure/dB 8V 112mA
NF Meter Gain/dB 5V 61mA
Measured Noise Figure/dB 5V 61mA
1725 - DC-36GHz Distributed Amplifier - Unit A
10
12
14
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 35 40
Frequency/GHz
Res
pons
e/dB
P1dB/dBmPsat/dBm
Vdd=8V; Vgg = -0.45V; Ids=109mA
AMPL
IFIE
RS
|| G
aAs
MM
IC P
HEM
T
408.526.1100 408.526.1105
[email protected] www.eclipsemdi.com
0.00
0 [0
.00]
0.000 [0.00]
0.09
1 [2.
30]
0.04
0 [1
.01]
0.05
1 [1.3
1]
0.08
7 [2
.20]
0.031 [0.78]
0.018 [0.45]
0.00
4 [0
.10]
0.01
6 [0
.40]
0.061 [1.55]
GaAs PHEMT MMICLow Noise Distributed AmplifierDC to 40 GHz
5 - 5
3
6
1 4
5
2
RF-IN
Vgg1
RF-OUT
Vgg2
C4
C1 C2
C5
REFERENCE DESCRIPTIONVdd [email protected] 108mAVgg1 -0.43VVgg2 OPTIONALC2,C5 100 pFC2,C4,C5,C7,C9 1000 pFC1,C8 0.1uFL 1 0.22uH
C6C8 C7
Vdd
EXTERNALBIAS CIRCUITOR TEE
Application Circuit
L1
C9
C3
NOTE: Adjust Vgg1 to between -2 to 0 volts to achieve Ids=110 mA typical.
1725 pg11725 pg21725 pg31725 pg41725 pg5