MMIC and components - Micranmicran.com/sites/micran_eng/data/UserFile/pdf/mmic/MMIC_WEB.pdf · Micran MMIC and components GaAs MMICs Multifunctional circuits 4 MP001D X-band GaAs

MMIC and components

MP001D 4

MP112D 17

MD210 23MD210N 25MD211 27MD212 29MD213 32MD214 35MD215 38MD216 40

MP307D 43MP309D 50MP312D 57MP331D 62

MD405 69

MP504 / MP505 71

MD603 78MD604 81MD605 84MD606 87MD607 90MD608 93MD609 96MD610 99MD611 103MD613 107

MD901 111MD902 113MD903 115

ZB-28 117PL-1050, PL-2100 119

Multifunctional circuits

Gaas MMics

attenuators

switches

Phase shifters

liMiters

aMPlifiers

Mixers

Power Detectors

Gaas DioDes

Micran | MMIC and components | GaAs MMICs | Multifunctional circuits

MP001D | Revision 2015-02-10 | Specifications subject to change without notice4

MP001DX-band GaAs MMIC Core Chip

Main features

General DescriPtion

electrical characteristics (aMbient teMPerature t = 25°c)

• Highly Integrated X-band Core Chip• Transmit and Receive Modes of Operation• 18 dB Small Signal Gain in Receive Mode• +20 dBm Output Power (P1dB) in Transmit Mode• Parallel Data Input• Compensated On-Chip Gate Bias Circuits• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010

Parameter ValueSupply Voltage for Amplifiers to +5.5 VGate Bias Voltage for Amplifiers -4 V to -6 VSupply Voltage for Digital Control -6 V to -9 VControl Voltages 0 to +5.5 VInput Power (RX/TX Mode) TBDOperating Temperature -40° to +85°CStorage Temperature -55° to +125°C

The MP001D is highly integrated transmit/receive (T/R) 3-port core chip which consists of integrated T/R switches, a 6-bit phase shifter, a 5-bit attenuator and four driver amplifiers. It covers the frequency range 8 to 11.5 GHz and can be used in Telecommunication and Radar applications. The on-chip digital control logic allows for parallel data input so that the phase shifter and attenuator may be changed instantaneously. This chip is manufactured using 0.18 μm gate length pHEMT process. The MMIC uses gold bond pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

absolute MaxiMuM ratinGs

Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 8-11.5 GHzS21_RX Receive Small Signal Gain at 11.5 GHz 15 16.5 dBS21_TX Transmit Small Signal Gain at 11.5 GHz 14 15.5 dBS11_RX / TX Input Return Loss in RX/TX Mode 10 dBS22_RX / TX Output Return Loss in RX/TX Mode 10 dBP1dB_RX Receive Output Power at 1 dB Compression Point 16 dBmP1dB_TX Transmit Output Power at 1 dB Compression Point 20 dBmNF_RX Receive Noise Figure 5.5 6 dBOIP3_RX Receive Output Third Order Intercept Point TBD dBmΔ_PhS Phase Shifter Range (6 bit, 64 states, 5.625° step) 355 degRMS_PhS RMS Phase Error 3 degΔ_ATT Attenuator Range (5 bit, 32 states, 0.9 dB step) 27.9 dBRMS_ATT RMS Attenuation Error 0.5 dBVD Supply Voltage for Amplifiers (VD1, VD2, VD3) +5 VDCVG Gate Bias Voltage for Amplifiers (VG1, VG2, VG3) -5 VDCVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VA1,2,3,4,5) & (VP1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VA1,2,3,4,5) & (VP1,2,3,4,5,6) 0 – +0.7 VDCI_VD_RX/TX DC Current for Supply Bus (VD=+5V) in RX/TX Mode 200/245 mAI_VG DC Current for Gate Bias Bus (VG=-5V) 15 mAI_VSS DC Current for Digital Control (VSS=-7.5V) 16 mA


MP001D | Revision 2015-02-10 | Specifications subject to change without notice 5

on-wafer MeasureMents (MultiPle Devices)

All the S-parameters for multiple devices are presented with an input/output inductance of 0.17 nH (it’s an equivalent of two wires: diameter 25 µm, length 450 µm).






on-wafer MeasureMents (tyPical)




Input power level for characterization in RX mode is -15 dBm.







Input power level for characterization in TX mode is -10 dBm.



on-wafer MeasureMents (variations versus teMPerature)

core chiP blocK DiaGraM



Mechanical Data

[1] 2550

[2] 3

400

[3] 4600[4] 4450[5] 4300[6] 4150[7] 4000[8] 3850[9] 3625

[10] 3400[11] 3250[12] 3100[13] 2950[14] 2800[15] 2650[16] 2500[17] 2350[18] 2200[19] 2050[20] 1900[21] 1750[22] 1600[23] 1450[24] 1300[25] 1075

[26] 800[27] 650[28] 500

[29]

340

0

[31]

175

0

4000

5100

0

150

3850

150

4950

[30]

190

0

Units: micrometers

Chip size = 4000×5100 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF pads (1, 2 and 29) are 100×200 µm2; DC and control pads (3 to 8, 10 to 24, 26, 27, 28, 30 and 31) are 100×100 µm2; GND pads (9, 25) are 100×250 µm2.



Pad number Pad ID DC Voltage (V) Description1 CP – RF common port (RX output / TX input)2 TX OUT – Transmit output3 VG3 -5 Gate bias for output amplifier (TX AMP)4 – – Direct access to gate of transistor of output amplifier (1,3)

5 VD3 +5 Drain bias for output amplifier (TX AMP)6 VG2 -5 Gate bias for common path amplifiers (AMP1 and AMP2)7 – – Direct access to gates of transistors of common path amplifiers (1,3)

8 VD2 +5 Drain bias for common path amplifiers (AMP1 and AMP2)9 GND – Decoupling ground10 REF – Reference voltage for digital control logic (2,3)

11 BIAS – Reference voltage for bias generator of digital control logic (2,3)

12 A1 0 / +3.3 Control of 0.9 dB attenuator bit13 A2 0 / +3.3 Control of 1.8 dB attenuator bit14 A3 0 / +3.3 Control of 3.6 dB attenuator bit15 A4 0 / +3.3 Control of 7.2 dB attenuator bit16 A5 0 / +3.3 Control of 14.4 dB attenuator bit17 VSS -7.5 Supply of digital control logic18 P1 0 / +3.3 Control of 5.625° phase shifter bit19 P2 0 / +3.3 Control of 11.25° phase shifter bit20 P3 0 / +3.3 Control of 22.5° phase shifter bit21 P4 0 / +3.3 Control of 45° phase shifter bit22 P5 0 / +3.3 Control of 90° phase shifter bit23 P6 0 / +3.3 Control of 180° phase shifter bit24 SW 0 / +3.3 Control of RX/TX switch25 GND – Decoupling ground26 VD1 +5 Drain bias for input amplifier (RX AMP)27 – – Direct access to gate of transistor of input amplifier (1,3)

28 VG1 -5 Gate bias for input amplifier (RX AMP)29 RX IN – Receive input30 GND – Decoupling ground31 RXQ – RF switch monitor (3)

bonD PaD DesiGnations

(1) It’s possible to use an external gate stabilization circuit instead integrated gate bias; (2) It’s possible to use an external voltage divider in addition to integrated circuit; (3) This pad is NOT used in typical conditions.



attenuator control table

State number Attenuation (dB) Voltage to apply on the control padsA5 A4 A3 A2 A1

0 (REF) 0.0 0 0 0 0 01 0.9 0 0 0 0 12 1.8 0 0 0 1 03 2.7 0 0 0 1 14 3.6 0 0 1 0 05 4.5 0 0 1 0 16 5.4 0 0 1 1 07 6.3 0 0 1 1 18 7.2 0 1 0 0 09 8.1 0 1 0 0 110 9.0 0 1 0 1 011 9.9 0 1 0 1 112 10.8 0 1 1 0 013 11.7 0 1 1 0 114 12.6 0 1 1 1 015 13.5 0 1 1 1 116 14.4 1 0 0 0 017 15.3 1 0 0 0 118 16.2 1 0 0 1 019 17.1 1 0 0 1 120 18.0 1 0 1 0 021 18.9 1 0 1 0 122 19.8 1 0 1 1 023 20.7 1 0 1 1 124 21.6 1 1 0 0 025 22.5 1 1 0 0 126 23.4 1 1 0 1 027 24.3 1 1 0 1 128 25.2 1 1 1 0 029 26.1 1 1 1 0 130 27.0 1 1 1 1 031 27.9 1 1 1 1 1

«0» is control voltage low and «1» is control voltage high



Phase shifter control table

State number Phase Shift (degree)

Voltage to apply on the control padsP6 P5 P4 P3 P2 P1

0 (REF) 0.000 0 0 0 0 0 01 5.625 0 0 0 0 0 12 11.250 0 0 0 0 1 03 16.875 0 0 0 0 1 14 22.500 0 0 0 1 0 05 28.125 0 0 0 1 0 16 33.750 0 0 0 1 1 07 39.375 0 0 0 1 1 18 45.000 0 0 1 0 0 09 50.625 0 0 1 0 0 110 56.250 0 0 1 0 1 011 61.875 0 0 1 0 1 112 67.500 0 0 1 1 0 013 73.125 0 0 1 1 0 114 78.750 0 0 1 1 1 015 84.375 0 0 1 1 1 116 90.000 0 1 0 0 0 017 95.625 0 1 0 0 0 118 101.250 0 1 0 0 1 019 106.875 0 1 0 0 1 120 112.500 0 1 0 1 0 021 118.125 0 1 0 1 0 122 123.750 0 1 0 1 1 023 129.375 0 1 0 1 1 124 135.000 0 1 1 0 0 025 140.625 0 1 1 0 0 126 146.250 0 1 1 0 1 027 151.875 0 1 1 0 1 128 157.500 0 1 1 1 0 029 163.125 0 1 1 1 0 130 168.750 0 1 1 1 1 031 174.375 0 1 1 1 1 132 180.000 1 0 0 0 0 033 185.625 1 0 0 0 0 134 191.250 1 0 0 0 1 035 196.875 1 0 0 0 1 136 202.500 1 0 0 1 0 037 208.125 1 0 0 1 0 138 213.750 1 0 0 1 1 039 219.375 1 0 0 1 1 140 225.000 1 0 1 0 0 041 230.625 1 0 1 0 0 142 236.250 1 0 1 0 1 043 241.875 1 0 1 0 1 144 247.500 1 0 1 1 0 045 253.125 1 0 1 1 0 146 258.750 1 0 1 1 1 047 264.375 1 0 1 1 1 148 270.000 1 1 0 0 0 049 275.625 1 1 0 0 0 150 281.250 1 1 0 0 1 051 286.875 1 1 0 0 1 152 292.500 1 1 0 1 0 053 298.125 1 1 0 1 0 154 303.750 1 1 0 1 1 055 309.375 1 1 0 1 1 1

«0» is control voltage low and «1» is control voltage high.




orDerinG inforMation


Part Number Package Type Version DescriptionMP001D Bare Die 02 X-band Core Chip

wire bonding A recommendation for RF pads (1, 2 and 29) is two wires: diameter 25 µm, length 450 µm. A recommendation for DC and control pads (3 to 8, 10 to 24, 26, 27, 28, 30 and 31) is one wire: diameter 25 µm, length 700-1000 µm.

Supply and Bias of Amplifiers The core chip can be operated in either Transmit (TX) or Receive (RX) mode. The bias setup is different for each.

The TX mode is activated by setting the RX/TX switch (pad #24, SW) to logic high (+3.3V). In this mode, pad #5 (VD3) to drain bias for the output amplifier (TX AMP) must be set to +5V. Additionally, the input amplifier (RX AMP) is not operational in TX mode, so pad #26 (VD1) must be set to 0V.

To select the RX mode of operation the RX/TX switch, pad #24 (SW) is set to logic low (0V). In this mode, pad #26 (VD1) to drain bias for the input amplifier (RX AMP) must be set to +5V. In the RX mode the output amplifier (TX AMP) is not used and pad #5 (VD3) must be set to 0V.

Both the gate bias circuitry (VG1, VG2, VG3) and the common path amplifiers (VD2) must be biased at -5V and +5V respec-tively in both TX and RX operation.

caution! Make sure the supply voltages are properly sequenced to ensure negative gate bias (VG1, VG2, and VG3) is avail-able before applying the positive drain bias (VD1, VD2, and VD3).

bias arrangement Each DC bias pad (VD1, VD2, VD3 and VG1, VG2, VG3) need to have DC bypass capacitance of 100 pF as close to the device as possible.

attenuator and Phase shifter control bias Digital control logic is integrated in the device to supply the necessary internal switching voltages for the RX/TX switch, atten-uator and phase shifter. The reference state of the core chip is enabled with logic low (0V) on control pads of the attenuator (12 to 16) and phase shifter (18 to 23). The binary weighted amplitude and phase states are switched by applying logic high on the respective control pad. Control tables for the attenuator and phase shifter are presented below.

recommended esD Management This device is susceptible to electrostatic and mechanical damage. Dice are supplied in antistatic contain-ers, which should be opened in cleanroom conditions at an appropriately grounded antistatic worksta-tion. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.

aPPlication notes



56 315.000 1 1 1 0 0 057 320.625 1 1 1 0 0 158 326.250 1 1 1 0 1 059 331.875 1 1 1 0 1 160 337.500 1 1 1 1 0 061 343.125 1 1 1 1 0 162 348.750 1 1 1 1 1 063 354.375 1 1 1 1 1 1

Micran | MMIC and components | GaAs MMICs | Attenuators

MP112D | Revision 2015-07-24 | Specifications subject to change without notice. 17

MP112D0.1-15 GHz GaAs MMIC Attenuator

Main features



• Operating range 0.1 to 15 GHz• Insertion loss 4.5 dB at 10 GHz• Attenuation range 31.5 dB (6 bit, 64 states, 0.5 dB step)• Parallel Data Input• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010• Chip size 2500x1250 µm2, thickness 100 µm

Parameter ValueSupply Voltage for Digital Control -6 V to -9 VControl Voltages 0 to +5.5 VRF Input Power TBDOperating Temperature -40° to +85°CStorage Temperature -55° to +125°C

Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 0.1-15 GHzIL Insertion Loss 6.5 dBS11 Input Return Loss 10 dBS22 Output Return Loss 9 dBP1dB Input Power at 1 dB Compression Point 16 dBmΔ_ATT Attenuator Range (6 bit, 64 states, 0.5 dB step) 31.5 degRMS_ATT RMS Amplitude Error 0.2 dBRMS_PhS RMS Phase Error 2.5 degVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VA1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VA1,2,3,4,5,6) 0 – +0.7 VDCI_VSS DC Current for Digital Control (VSS=-7.5V) 10 mA


MP112D | Revision 2015-07-24 | Specifications subject to change without notice.18

on-wafer MeasureMents at t = 25°c (tyPical)




Input power level for characterization is -5 dBm.



attenuator functional DiaGraM

Mechanical Data


Chip size = 2500x1250 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads (1, 2 and 4 to 12) are 100x100 µm2; A GND pad (3) is 100x150 µm2.

Pad number Pad ID DC Voltage (V) Description1 – – RF port #12 – – RF port #23 GND – Decoupling ground4 A6 0 / +3.3 Control of 16.0 dB attenuator bit5 A5 0 / +3.3 Control of 8.0 dB attenuator bit6 A4 0 / +3.3 Control of 4.0 dB attenuator bit7 VSS -7.5 Supply of digital control logic8 A3 0 / +3.3 Control of 2.0 dB attenuator bit9 A2 0 / +3.3 Control of 1.0 dB attenuator bit10 A1 0 / +3.3 Control of 0.5 dB attenuator bit11 BIAS – Reference voltage for bias generator of digital control logic (1,2)

12 REF – Reference voltage for digital control logic (1,2)

13 VQ – Monitor of the output voltage of the control logic (1)

(1) This pad is NOT used in typical conditions;(2) It’s possible to use an external voltage divider in addition to integrated circuit.




State number Attenuation (dB)

Voltage to apply on the control padsA6 A5 A4 A3 A2 A1

0 (REF) 0.0 0 0 0 0 0 01 0.5 0 0 0 0 0 12 1.0 0 0 0 0 1 03 1.5 0 0 0 0 1 14 2.0 0 0 0 1 0 05 2.5 0 0 0 1 0 16 3.0 0 0 0 1 1 07 3.5 0 0 0 1 1 18 4.0 0 0 1 0 0 09 4.5 0 0 1 0 0 110 5.0 0 0 1 0 1 011 5.5 0 0 1 0 1 112 6.0 0 0 1 1 0 013 6.5 0 0 1 1 0 114 7.0 0 0 1 1 1 015 7.5 0 0 1 1 1 116 8.0 0 1 0 0 0 017 8.5 0 1 0 0 0 118 9.0 0 1 0 0 1 019 9.5 0 1 0 0 1 120 10.0 0 1 0 1 0 021 10.5 0 1 0 1 0 122 11.0 0 1 0 1 1 023 11.5 0 1 0 1 1 124 12.0 0 1 1 0 0 025 12.5 0 1 1 0 0 126 13.0 0 1 1 0 1 027 13.5 0 1 1 0 1 128 14.0 0 1 1 1 0 029 14.5 0 1 1 1 0 130 15.0 0 1 1 1 1 031 15.5 0 1 1 1 1 132 16.0 1 0 0 0 0 033 16.5 1 0 0 0 0 134 17.0 1 0 0 0 1 035 17.5 1 0 0 0 1 136 18.0 1 0 0 1 0 037 18.5 1 0 0 1 0 138 19.0 1 0 0 1 1 039 19.5 1 0 0 1 1 140 20.0 1 0 1 0 0 041 20.5 1 0 1 0 0 142 21.0 1 0 1 0 1 043 21.5 1 0 1 0 1 144 22.0 1 0 1 1 0 045 22.5 1 0 1 1 0 146 23.0 1 0 1 1 1 047 23.5 1 0 1 1 1 148 24.0 1 1 0 0 0 049 24.5 1 1 0 0 0 150 25.0 1 1 0 0 1 051 25.5 1 1 0 0 1 152 26.0 1 1 0 1 0 053 26.5 1 1 0 1 0 154 27.0 1 1 0 1 1 055 27.5 1 1 0 1 1 1





State number Attenuation (dB)

Voltage to apply on the control padsA6 A5 A4 A3 A2 A1

56 28.0 1 1 1 0 0 057 28.5 1 1 1 0 0 158 29.0 1 1 1 0 1 059 29.5 1 1 1 0 1 160 30.0 1 1 1 1 0 061 30.5 1 1 1 1 0 162 31.0 1 1 1 1 1 063 31.5 1 1 1 1 1 1



Part Number Package Type Version DescriptionMP112D Bare Die 01 0.1-15 GHz Attenuator

wire bonding A recommendation for RF pads (1 and 2) is one wire: diameter 25 µm, length 450 µm. A recommendation for DC and control pads (3 to 10) is one wire: diameter 25 µm, length 700-1000 µm.

bias arrangement The pad #7 (VSS) needs to have DC bypass capacitance of 100 pF as close to the device as possible.

attenuator control bias Digital control logic is integrated in the device to supply the necessary internal switching voltages for the attenuator’s cells. The reference state is enabled with logic low (0V) on control pads of the attenuator (4 to 6 and 8 to 10). The binary weight-ed attenuation states are switched by applying logic high on the respective control pad. A control table for the attenuator is presented below.


aPPlication notes

Micran | MMIC and components | GaAs MMICs | Switches

23

Parameter Descriptions Units ValueTamb Operating temperature °C –60...+85Pin Incident CW RF Power mW 250UR Breakdown voltage V 20IF Bias current mA 30

MD210SPST GaAs Pin diode switch

Main features


oPeration

states table

tyPical rf PerforMance (tamb= 25 ºc, Pin= 1 mw, on-wafer MeasureMents)

• Bandwidth: 0,2...40,0 GHz• Isertion loss: < 0,5 dB• Isolation: > 22 dB

MD210 is controlled with use of external bias network corresponding to figure and states table below.

MD210 with bias network

MMIC state Control bias State descriptionCTRL 1 P2↔P1

St1 0...−20V Low lossSt2 +5...10 mA Isolation

MD210 | Revision 1.0 2014-02-10 | Specifications subject to change without notice.


24

wire bonding Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Recommen-dation for RF pads is two wires diameter 25 µm or a foil stripe with minimal length.

Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. The die should be attached directly to the ground plane eutectically or with con-ductive epoxy.

Dc coupling All ports are DC coupled. RF_Input port should be DC blocked externally using a series capacitor whose value has been cho-sen to pass the necessary frequency range.


Mechanical Data

aPPlication notes

Dimension Min Typ. Max UnitsA 560 580 600 umB — 0,5A —C 100 110 120D 1040 1060 1080E 90 100 110

Contact pads: 100×100 um.

Back side of MMIC and contact pads are covered with gold.



25


MD210NSPST GaAs Pin diode non-reflective switch

Main features


oPeration

states table



MD210N is controlled with use of external bias network corresponding to figure and states table below.

MD210n with bias network

MMIC state Control bias State descriptionCTRL 1 CTRL 2 P2↔P1

St1 0 V –10 mA Low lossSt2 +10 mA +10 mA Isolation

MD210N | Revision 1.0 2014-02-10 | Specifications subject to change without notice.


26





Mechanical Data

aPPlication notes



Dimension Min Typ. Max UnitsA 100 110 120 umB 920 940 960C 300 310 320D 120 110 140E 1090 1110 1130F 595 605 615G 90 100 110

MD210N | Revision 1.0 2014-02-10 | Specifications subject to change without notice.


27


MD211SPDT GaAs Pin diode switch

Main features


oPeration

states table





MMIC state Control bias State descriptionCTRL 1 CTRL 2 P2↔P1 P3↔P1

St1 –10 mA +10 mA Low loss IsolationSt2 +10 mA –10 mA Isolation Low loss



28





Mechanical Data

aPPlication notes



Dimension Min Typ. Max UnitsA 90 100 110 umB 760 780 800C 290 300 310D 90 100 110E 1070 1090 1110F --- 0,5E ---G 90 100 110



29


MD212SPDT GaAs Pin diode switch

Main features


oPeration

states table




MMIC state Control bias State descriptionCTRL 1 CTRL 2 CTRL 3 P2↔P1 P3↔P1 P4↔P1

St1 –10 mA +10 mA +10 mA Low loss Isolation IsolationSt2 +10 mA –10 mA +10 mA Isolation Low loss IsolationSt3 +10 mA +10 mA –10 mA Isolation Isolation Low loss



30




31





Mechanical Data

aPPlication notes



Dimension Min Typ. Max UnitsA 90 100 110 umB 1040 1060 1080C 565 575 585D 90 100 110E --- B ---F --- 0,5E ---G 90 100 110



32

MD213SP4T GaAs Pin diode switch

General DescriPtion

oPeration

MD213 is a reflective SP4T GaAs Pin diode switch.


Parameter ValueOperating temperature –60...+85 ºCIncident CW RF Power 250 mWBreakdown voltage 20 VBias current 30 mA


MMIC state Control bias State descriptionCTRL 1 CTRL 2 CTRL 3 CTRL 4 P2↔P1 P3↔P1 P4↔P1 P5↔P1

St1 –10 mA +10 mA +10 mA +10 mA Low loss Isolation Isolation IsolationSt2 +10 mA –10 mA +10 mA +10 mA Isolation Low loss Isolation IsolationSt3 +10 mA +10 mA –10 mA +10 mA Isolation Isolation Low loss IsolationSt4 +10 mA +10 mA +10 mA –10 mA Isolation Isolation Isolation Low loss

Main features




33




34

Mechanical Data


Dimension Min Typ. Max UnitsA 90 100 110 umB 1010 1030 1050C 595 605 615D 95 105 115E 390 400 410F 1230 1250 1270G 440 445 450H --- 0,5F ---J 90 100 110




aPPlication notes





35

MD214SP4T GaAs Pin diode switch

General DescriPtion

oPeration

MD214 is a reflective SPST GaAs Pin diode switch.




MMICstate

Control bias State descriptionCTRL 1 CTRL 2 CTRL 3 CTRL 4 CTRL 5 P2↔P1 P3↔P1 P4↔P1 P5↔P1 P6↔P1

St1 –10 mA +10 mA +10 mA +10 mA +10 mA Low loss Isolation Isolation Isolation IsolationSt2 +10 mA –10 mA +10 mA +10 mA +10 mA Isolation Low loss Isolation Isolation IsolationSt3 +10 mA +10 mA –10 mA +10 mA +10 mA Isolation Isolation Low loss Isolation IsolationSt4 +10 mA +10 mA +10 mA –10 mA +10 mA Isolation Isolation Isolation Low loss IsolationSt5 +10 mA +10 mA +10 mA +10 mA –10 mA Isolation Isolation Isolation Isolation Low loss

Main features




36




37

Mechanical Data




Dimension Min Typ. Max UnitsA 90 100 110 umB 315 325 335C 1110 1130 1150D 450 455 460E --- A ---F --- 0,5G ---G 1190 1210 1230H --- 0,5G ---J 90 100 110




aPPlication notes



38

MD215SPDT GaAs Pin diode switch with integrated bias networks

General DescriPtion

oPeration

MD215 is a reflective SPDT GaAs Pin diode switch with integrated bias networks.

MD215 is controlled with use of internal bias networks corresponding to states table below.

MD215 connection using external resistor MD215 connection using integrated resistor r = 60 ohm



MMIC state Control bias State descriptionCTRL 1 CTRL 4 P2↔P1 P3↔P1

St1 –10 mA +10 mA Low loss IsolationSt2 +10 mA –10 mA Isolation Low loss

Main features

• Bandwidth: 4...27 GHz• Isertion loss: < 1,3 dB• Isolation: > 35 dB




39

Mechanical Data

Contact pads of ports P1, P2, P3: 150×150 um. Contact pads of ports CTRL1, CTRL2, CTRL3, CTRL4: 100×100 um. Back side of MMIC and contact pads are covered with gold.


Dimension Min Typ. Max UnitsA 440 450 460 umB 1310 1330 1350C 90 100 110D 125 135 145E 445 450 455F 1800 1820 1840G 515 520 525H --- D ---J 115 125 135K 780 785 790L 90 100 110




aPPlication notes



40

MD216SP3T GaAs Pin diode switch with integrated bias networks

General DescriPtion

oPeration

MD216 is a reflective SP3T GaAs Pin diode switch with integrated bias networks.

MD216 is controlled with use of internal bias networks corresponding to states table below.

MD216 connection using external resistor MD216 connection using integrated resistor r = 60 ohm



MMIC state Control bias State descriptionCTRL 3 CTRL 4 CTRL 5 P2↔P1 P3↔P1 P4↔P1

St1 –10 mA +10 mA +10 mA Low loss Isolation IsolationSt2 +10 mA –10 mA +10 mA Isolation Low loss IsolationSt3 +10 mA +10 mA –10 mA Isolation Isolation Low loss

Main features

• Bandwidth: 4...27 GHz• Isertion loss: < 1,3 dB• Isolation: > 35 dB



41




42

Mechanical Data

Contact pads of ports P1, P2, P3, P4: 150×150 um. Contact pads of ports CTRL1, CTRL2, CTRL3, CTRL4, CTRL5: 100×100 um. Back side of MMIC and contact pads are covered with gold.


Dimension Min Typ. Max UnitsA 100 110 120 umB 800 805 810C 1840 1860 1880D 115 125 135E 95 105 115F 155 165 175G 755 765 775H --- C ---J 140 150 160K --- D ---L 130 140 150M 345 350 355N 150 160 170O 90 100 110




aPPlication notes


Micran | MMIC and components | GaAs MMICs | Phase shifters

43MP307D | Revision 2015-07-03 | Specifications subject to change without notice.

MP307DS-band GaAs MMIC Phase Shifter

Main features

General DescriPtion

• Operating range 3.3 to 4.1 GHz• Insertion loss 8 dB at 3.7 GHz• Phase shift range 355° (6 bit, 64 states, 5.625° step)• Parallel Data Input• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010• Chip size 2300×2300 µm2, thickness 100 µm

The MP307D is a high performance GaAs MMIC 6-bit digital phase shifter which covers the frequency range 3.3 to 4.1 GHz and can be used in Telecommunication and Radar applications. The on-chip digital control logic allows for parallel data input. This chip is manufactured using 0.18 μm gate length pHEMT process. The MMIC uses gold bond pads and backside metalliza-tion and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.




Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 3.3-4.1 GHzS21 Insertion Loss 8 8.5 dBS21_Var Insertion Loss Variation 1 dBS11 Input Return Loss 12 dBS22 Output Return Loss 12 dBP1dB Input Power at 1 dB Compression Point 20 dBmΔ_PhS Phase Shifter Range (6 bit, 64 states, 5.625° step) 355 degRMS_PhS RMS Phase Error 1.5 degRMS_S21 RMS Amplitude Error 0.25 dBVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VA1,2,3,4,5) & (VP1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VA1,2,3,4,5) & (VP1,2,3,4,5,6) 0 – +0.7 VDCI_VSS DC Current for Digital Control (VSS=-7.5V) 9.5 mA


44 MP307D | Revision 2015-07-03 | Specifications subject to change without notice.


Parameters for multiple devices are presented with an input/output inductance of 0.17 nH.










Mechanical Data


Phase shifter functional DiaGraM

Chip size = 2300×2300 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads (1 to 12) are 100×100 µm2; A GND pad (13) is 100×150 µm2.

Pad number Pad ID DC Voltage (V) Description1 RF2 – RF port #22 RF1 – RF port #13 VQ – Monitor of the output voltage of the control logic (1)



6 P1 0 / +3.3 Control of 5.625° phase shifter bit7 P2 0 / +3.3 Control of 11.25° phase shifter bit8 P3 0 / +3.3 Control of 22.5° phase shifter bit9 VSS -7.5 Supply of digital control logic10 P4 0 / +3.3 Control of 45° phase shifter bit11 P5 0 / +3.3 Control of 90° phase shifter bit12 P6 0 / +3.3 Control of 180° phase shifter bit13 GND – Decoupling ground

(1) This pad is NOT used in typical conditions; (2) It’s possible to use an external voltage divider in addition to integrated circuit.






0 (REF) 0.000 0 0 0 0 0 01 5.625 0 0 0 0 0 1

2 11.250 0 0 0 0 1 0

3 16.875 0 0 0 0 1 1

4 22.500 0 0 0 1 0 05 28.125 0 0 0 1 0 16 33.750 0 0 0 1 1 07 39.375 0 0 0 1 1 18 45.000 0 0 1 0 0 09 50.625 0 0 1 0 0 110 56.250 0 0 1 0 1 011 61.875 0 0 1 0 1 112 67.500 0 0 1 1 0 013 73.125 0 0 1 1 0 114 78.750 0 0 1 1 1 015 84.375 0 0 1 1 1 116 90.000 0 1 0 0 0 017 95.625 0 1 0 0 0 118 101.250 0 1 0 0 1 019 106.875 0 1 0 0 1 120 112.500 0 1 0 1 0 021 118.125 0 1 0 1 0 122 123.750 0 1 0 1 1 023 129.375 0 1 0 1 1 124 135.000 0 1 1 0 0 025 140.625 0 1 1 0 0 126 146.250 0 1 1 0 1 027 151.875 0 1 1 0 1 128 157.500 0 1 1 1 0 029 163.125 0 1 1 1 0 130 168.750 0 1 1 1 1 031 174.375 0 1 1 1 1 132 180.000 1 0 0 0 0 033 185.625 1 0 0 0 0 134 191.250 1 0 0 0 1 035 196.875 1 0 0 0 1 136 202.500 1 0 0 1 0 037 208.125 1 0 0 1 0 138 213.750 1 0 0 1 1 039 219.375 1 0 0 1 1 140 225.000 1 0 1 0 0 041 230.625 1 0 1 0 0 142 236.250 1 0 1 0 1 043 241.875 1 0 1 0 1 144 247.500 1 0 1 1 0 045 253.125 1 0 1 1 0 146 258.750 1 0 1 1 1 0






48 270.000 1 1 0 0 0 049 275.625 1 1 0 0 0 150 281.250 1 1 0 0 1 051 286.875 1 1 0 0 1 152 292.500 1 1 0 1 0 053 298.125 1 1 0 1 0 154 303.750 1 1 0 1 1 055 309.375 1 1 0 1 1 156 315.000 1 1 1 0 0 057 320.625 1 1 1 0 0 158 326.250 1 1 1 0 1 059 331.875 1 1 1 0 1 160 337.500 1 1 1 1 0 061 343.125 1 1 1 1 0 162 348.750 1 1 1 1 1 063 354.375 1 1 1 1 1 1

Phase shifter control table (continue)





Phase shifter control bias Digital control logic is integrated in the device to supply the necessary internal switching voltages for the phase shifter’s cells. The reference state is enabled with logic low (0V) on control pads of the phase shifter (6 to 8 and 10 to 12). The binary weighted phase states are switched by applying logic high on the respective control pad. Control table for the phase shifter is presented above.

aPPlication notes


Part Number Package Type Version DescriptionMP307D Bare Die 01 S-band Phase Shifter




Main features

General DescriPtion

• Operating range 2.5 to 4.0 GHz• Insertion loss 8 dB at 3.3 GHz• Phase shift range 355° (6 bit, 64 states, 5.625° step)• Parallel Data Input• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010• Chip size 2300x2300 µm2, thickness 100 µm

The MP309D is a high performance GaAs MMIC 6-bit digital phase shifter which covers the frequency range 2.5 to 4.0 GHz and can be used in Telecommunication and Radar applications. The on-chip digital control logic allows for parallel data input. This chip is manufactured using 0.18 μm gate length pHEMT process. The MMIC uses gold bond pads and backside metalliza-tion and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.




Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 2.5-4.0 GHzS21 Insertion Loss 9 9.5 dBS21_Var Insertion Loss Variation 1.5 dBS11 Input Return Loss 10 dBS22 Output Return Loss 13 dBP1dB Input Power at 1 dB Compression Point 20 dBmΔ_PhS Phase Shifter Range (6 bit, 64 states, 5.625° step) 355 degRMS_PhS RMS Phase Error 3 degRMS_S21 RMS Amplitude Error 0.4 dBVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VA1,2,3,4,5) & (VP1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VA1,2,3,4,5) & (VP1,2,3,4,5,6) 0 – +0.7 VDCI_VSS DC Current for Digital Control (VSS=-7.5V) 9.5 mA














Mechanical Data



Chip size = 2300×2300 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads (1 to 12) are 100×100 µm2; A GND pad (13) is 100×150 µm2.

Pad number Pad ID DC Voltage (V) Description1 RF2 – RF port #22 RF1 – RF port #13 VQ – Monitor of the output voltage of the control logic (1)



6 P1 0 / +3.3 Control of 5.625° phase shifter bit7 P2 0 / +3.3 Control of 11.25° phase shifter bit8 P3 0 / +3.3 Control of 22.5° phase shifter bit9 VSS -7.5 Supply of digital control logic10 P4 0 / +3.3 Control of 45° phase shifter bit11 P5 0 / +3.3 Control of 90° phase shifter bit12 P6 0 / +3.3 Control of 180° phase shifter bit13 GND – Decoupling ground







0 (REF) 0.000 0 0 0 0 0 01 5.625 0 0 0 0 0 12 11.250 0 0 0 0 1 03 16.875 0 0 0 0 1 14 22.500 0 0 0 1 0 05 28.125 0 0 0 1 0 16 33.750 0 0 0 1 1 07 39.375 0 0 0 1 1 18 45.000 0 0 1 0 0 09 50.625 0 0 1 0 0 110 56.250 0 0 1 0 1 011 61.875 0 0 1 0 1 112 67.500 0 0 1 1 0 013 73.125 0 0 1 1 0 114 78.750 0 0 1 1 1 015 84.375 0 0 1 1 1 116 90.000 0 1 0 0 0 017 95.625 0 1 0 0 0 118 101.250 0 1 0 0 1 019 106.875 0 1 0 0 1 120 112.500 0 1 0 1 0 021 118.125 0 1 0 1 0 122 123.750 0 1 0 1 1 023 129.375 0 1 0 1 1 124 135.000 0 1 1 0 0 025 140.625 0 1 1 0 0 126 146.250 0 1 1 0 1 027 151.875 0 1 1 0 1 128 157.500 0 1 1 1 0 029 163.125 0 1 1 1 0 130 168.750 0 1 1 1 1 031 174.375 0 1 1 1 1 132 180.000 1 0 0 0 0 033 185.625 1 0 0 0 0 134 191.250 1 0 0 0 1 035 196.875 1 0 0 0 1 136 202.500 1 0 0 1 0 037 208.125 1 0 0 1 0 138 213.750 1 0 0 1 1 039 219.375 1 0 0 1 1 140 225.000 1 0 1 0 0 041 230.625 1 0 1 0 0 142 236.250 1 0 1 0 1 043 241.875 1 0 1 0 1 144 247.500 1 0 1 1 0 045 253.125 1 0 1 1 0 146 258.750 1 0 1 1 1 047 264.375 1 0 1 1 1 1






48 270.000 1 1 0 0 0 049 275.625 1 1 0 0 0 150 281.250 1 1 0 0 1 051 286.875 1 1 0 0 1 152 292.500 1 1 0 1 0 053 298.125 1 1 0 1 0 154 303.750 1 1 0 1 1 055 309.375 1 1 0 1 1 156 315.000 1 1 1 0 0 057 320.625 1 1 1 0 0 158 326.250 1 1 1 0 1 059 331.875 1 1 1 0 1 160 337.500 1 1 1 1 0 061 343.125 1 1 1 1 0 162 348.750 1 1 1 1 1 063 354.375 1 1 1 1 1 1







aPPlication notes






Main features

General DescriPtion

• Operating range 3.4 to 4.0 GHz• Insertion loss 5 dB at 3.7 GHz• Phase shift range 355° (6 bit, 64 states, 5.625° step)• Parallel Data Input• 100% On-Wafer DC and RF Tested• Chip size 2300×2300 µm2, thickness 100 µm

The MP312D is a high performance GaAs MMIC 6-bit digital phase shifter which covers the frequency range 3.4 to 4.0 GHz and can be used in Telecommunication and Radar applications. The on-chip digital control logic allows for parallel data input. This chip is manufactured using 0.5 μm gate length Switch pHEMT process. The MMIC uses gold bond pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.




Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 3.4-4.0 GHzS21 Insertion Loss 5 5.5 dBS21_Var Insertion Loss Variation 1.2 dBS11 Input Return Loss 9 dBS22 Output Return Loss 9 dBP1dB Input Power at 1 dB Compression Point TBD dBmΔ_PhS Phase Shifter Range (6 bit, 64 states, 5.625° step) 355 degRMS_PhS RMS Phase Error 3.1 degRMS_S21 RMS Amplitude Error 0.3 dBVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VA1,2,3,4,5) & (VP1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VA1,2,3,4,5) & (VP1,2,3,4,5,6) 0 – +0.7 VDCI_VSS DC Current for Digital Control (VSS=-7.5V) TBD mA






Mechanical Data



Chip size = 2300×2300 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads (1 to 13) are 100×100 µm2.

Pad number Pad ID DC Voltage (V) Description1 RF IN – RF port #12 OU – Monitor of the output voltage of the control logic (1)

3 GN – Decoupling ground4 A1 0 / +3.3 Control of 5.625° phase shifter bit5 A2 0 / +3.3 Control of 11.25° phase shifter bit6 A3 0 / +3.3 Control of 22.5° phase shifter bit7 VS -7.5 Supply of digital control logic8 A4 0 / +3.3 Control of 45° phase shifter bit9 A5 0 / +3.3 Control of 90° phase shifter bit10 A6 0 / +3.3 Control of 180° phase shifter bit11 BI – Reference voltage for bias generator of digital control logic (1,2)

12 RE – Reference voltage for digital control logic (1,2)

13 RF OUT – RF port #2







0 (REF) 0.000 0 0 0 0 0 01 5.625 0 0 0 0 0 1

2 11.250 0 0 0 0 1 0

3 16.875 0 0 0 0 1 1

4 22.500 0 0 0 1 0 05 28.125 0 0 0 1 0 16 33.750 0 0 0 1 1 07 39.375 0 0 0 1 1 18 45.000 0 0 1 0 0 09 50.625 0 0 1 0 0 110 56.250 0 0 1 0 1 011 61.875 0 0 1 0 1 112 67.500 0 0 1 1 0 013 73.125 0 0 1 1 0 114 78.750 0 0 1 1 1 015 84.375 0 0 1 1 1 116 90.000 0 1 0 0 0 017 95.625 0 1 0 0 0 118 101.250 0 1 0 0 1 019 106.875 0 1 0 0 1 120 112.500 0 1 0 1 0 021 118.125 0 1 0 1 0 122 123.750 0 1 0 1 1 023 129.375 0 1 0 1 1 124 135.000 0 1 1 0 0 025 140.625 0 1 1 0 0 126 146.250 0 1 1 0 1 027 151.875 0 1 1 0 1 128 157.500 0 1 1 1 0 029 163.125 0 1 1 1 0 130 168.750 0 1 1 1 1 031 174.375 0 1 1 1 1 132 180.000 1 0 0 0 0 033 185.625 1 0 0 0 0 134 191.250 1 0 0 0 1 035 196.875 1 0 0 0 1 136 202.500 1 0 0 1 0 037 208.125 1 0 0 1 0 138 213.750 1 0 0 1 1 039 219.375 1 0 0 1 1 140 225.000 1 0 1 0 0 041 230.625 1 0 1 0 0 142 236.250 1 0 1 0 1 043 241.875 1 0 1 0 1 144 247.500 1 0 1 1 0 045 253.125 1 0 1 1 0 146 258.750 1 0 1 1 1 047 264.375 1 0 1 1 1 1






48 270.000 1 1 0 0 0 049 275.625 1 1 0 0 0 150 281.250 1 1 0 0 1 051 286.875 1 1 0 0 1 152 292.500 1 1 0 1 0 053 298.125 1 1 0 1 0 154 303.750 1 1 0 1 1 055 309.375 1 1 0 1 1 156 315.000 1 1 1 0 0 057 320.625 1 1 1 0 0 158 326.250 1 1 1 0 1 059 331.875 1 1 1 0 1 160 337.500 1 1 1 1 0 061 343.125 1 1 1 1 0 162 348.750 1 1 1 1 1 063 354.375 1 1 1 1 1 1







aPPlication notes





MP331DX-band GaAs MMIC Phase Shifter

Main features

General DescriPtion

• Operating range 8 to 12 GHz• Insertion loss 8 dB at 10 GHz• Phase shift range 355° (6 bit, 64 states, 5.625° step)• Parallel Data Input• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010• Chip size 1800×3000 µm2, thickness 100 µm

The MP331D is a high performance GaAs MMIC 6-bit digital phase shifter which covers the frequency range 8 to 12 GHz and can be used in Telecommunication and Radar applications. The on-chip digital control logic allows for parallel data input. This chip is manufactured using 0.18 μm gate length pHEMT process. The MMIC uses gold bond pads and backside metalliza-tion and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.




Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 8-12 GHzIL Insertion Loss 9 9.5 dBIL_Var Insertion Loss Variation 1.7 dBS11 Input Return Loss 8 dBS22 Output Return Loss 9 dBP1dB Input Power at 1 dB Compression Point 20 dBmΔ_PhS Phase Shifter Range (6 bit, 64 states, 5.625° step) 355 degRMS_PhS RMS Phase Error 3.1 degRMS_S21 RMS Amplitude Error 0.45 dBVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VP1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VP1,2,3,4,5,6) 0 – +0.7 VDCI_VSS DC Current for Digital Control (VSS=-7.5V) 10 mA














Mechanical Data



Chip size = 1800×3000 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads (1 to 13) are 100×100 µm2.

Pad number Pad ID DC Voltage (V) Description1 VQ – Monitor of the output voltage of the control logic (1)



4 P1 0 / +3.3 Control of 5.625° phase shifter bit5 P2 0 / +3.3 Control of 11.25° phase shifter bit6 P3 0 / +3.3 Control of 22.5° phase shifter bit7 VSS -7.5 Supply of digital control logic8 P4 0 / +3.3 Control of 45° phase shifter bit9 P5 0 / +3.3 Control of 90° phase shifter bit10 P6 0 / +3.3 Control of 180° phase shifter bit11 GND – Decoupling ground12 RF OUT – RF port #213 RF IN – RF port #1







0 (REF) 0.000 0 0 0 0 0 01 5.625 0 0 0 0 0 12 11.250 0 0 0 0 1 03 16.875 0 0 0 0 1 14 22.500 0 0 0 1 0 05 28.125 0 0 0 1 0 16 33.750 0 0 0 1 1 07 39.375 0 0 0 1 1 18 45.000 0 0 1 0 0 09 50.625 0 0 1 0 0 110 56.250 0 0 1 0 1 011 61.875 0 0 1 0 1 112 67.500 0 0 1 1 0 013 73.125 0 0 1 1 0 114 78.750 0 0 1 1 1 015 84.375 0 0 1 1 1 116 90.000 0 1 0 0 0 017 95.625 0 1 0 0 0 118 101.250 0 1 0 0 1 019 106.875 0 1 0 0 1 120 112.500 0 1 0 1 0 021 118.125 0 1 0 1 0 122 123.750 0 1 0 1 1 023 129.375 0 1 0 1 1 124 135.000 0 1 1 0 0 025 140.625 0 1 1 0 0 126 146.250 0 1 1 0 1 027 151.875 0 1 1 0 1 128 157.500 0 1 1 1 0 029 163.125 0 1 1 1 0 130 168.750 0 1 1 1 1 031 174.375 0 1 1 1 1 132 180.000 1 0 0 0 0 033 185.625 1 0 0 0 0 134 191.250 1 0 0 0 1 035 196.875 1 0 0 0 1 136 202.500 1 0 0 1 0 037 208.125 1 0 0 1 0 138 213.750 1 0 0 1 1 039 219.375 1 0 0 1 1 140 225.000 1 0 1 0 0 041 230.625 1 0 1 0 0 142 236.250 1 0 1 0 1 043 241.875 1 0 1 0 1 144 247.500 1 0 1 1 0 045 253.125 1 0 1 1 0 146 258.750 1 0 1 1 1 047 264.375 1 0 1 1 1 1






48 270.000 1 1 0 0 0 049 275.625 1 1 0 0 0 150 281.250 1 1 0 0 1 051 286.875 1 1 0 0 1 152 292.500 1 1 0 1 0 053 298.125 1 1 0 1 0 154 303.750 1 1 0 1 1 055 309.375 1 1 0 1 1 156 315.000 1 1 1 0 0 057 320.625 1 1 1 0 0 158 326.250 1 1 1 0 1 059 331.875 1 1 1 0 1 160 337.500 1 1 1 1 0 061 343.125 1 1 1 1 0 162 348.750 1 1 1 1 1 063 354.375 1 1 1 1 1 1




wire bonding A recommendation for RF pads (12 and 13) is one wire: diameter 25 µm, length 450 µm. A recommendation for DC and con-trol pads (4 to 11) is one wire: diameter 25 µm, length 700-1000 µm.



aPPlication notes


Part Number Package Type Version DescriptionMP331D Bare Die 02 X-band Phase Shifter

Micran | MMIC and components | GaAs MMICs | Limiters

69MD405 | Revision 2014-02-10 | Specifications subject to change without notice.

Parameter ValueOperating temperature –60...+85 ºCIncident CW RF Power 5 W

MD405GaAs Pin diode limiter

Main features


General DescriPtion


• Bandwidth: 3...25 GHz• Isertion loss: < 1,4 dB• Integrated DC blocking capacitors• Leakage: < 18 dBm

MD405 is a passive dual stage limiter.

Micran | MMIC and components | GaAs MMICs | Limiters

70 MD405 | Revision 2014-02-10 | Specifications subject to change without notice.


Mechanical Data

Dimension Min Typ. Max UnitsA 525 535 545 umB 1040 1060 1080C 115 125 135D 1370 1390 1410E 90 100 110






aPPlication notes

Micran | MMIC and components | GaAs MMICs | Amplifiers

71MP504 / MP505 | Revision 2015-03-10 | Specifications subject to change without notice.

MP504 / MP505L-band GaAs MMIC LNAs

Main features

General DescriPtion

• Octave Bandwidth 1-2 GHz• 16 dB Small Signal Gain• 1.8 dB (MP504) and 2.3 dB (MP505) Noise Figure• 17 dBm Output Power (P1dB)• Compensated On-Chip Gate Bias Circuits• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010

The MP504 is an L-band single stage low noise amplifier and the MP505 is the same one with an integrated input SPDT switch. Both the MMICs include an active gate bias circuit and are well suited for a range of microwave application and systems. These chips are manufactured using 0.18 μm gate length pHEMT process. The MMICs use gold bond pads and backside met-allization and are fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

Parameter ValueSupply Voltage for Amplifier to +5.5 VGate Bias Voltage for Amplifier -4 V to -6 VRef. and Control Voltages for Switch to +6 VRF Input Power TBDOperating Temperature -40° to +85°CStorage Temperature -55° to +125°C



Symbol Parameter MP504 MP505 UnitMin. Typ. Max. Min. Typ. Max.

ΔF Frequency Range 1-2 1-2 GHzS21 Small Signal Gain 15.5 15 dBΔS21 Gain Imbalance between the Branches 0.1 dBS11 Input Return Loss 15 15 dBS22 Output Return Loss 12 12 dBS12 Reverse Isolation 22 22 dBISO Branch Isolation 26 dBNF Noise Figure 1.8 2.3 dBP1dB Output Power at 1 dB Compression Point 17 17 dBmOIP3 Output Third Order Intercept Point TBD TBD dBmVD Supply Voltage for Amplifier +5 +5 VDCVSA Gate Bias Voltage for Amplifier -5 -5 VDCVSS Reference Voltage for SPDT Switch +5 VDCVLH Control Voltage High (SW1, SW2) +5 VDCVLL Control Voltage Low (SW1, SW2) 0 VDCI_VD DC Current for Supply Bus (VD=+5V) 80 80 mAI_VSA DC Current for Gate Bias Bus (VSA=-5V) 3 3 mAI_VSS DC Current for Reference Bus (VSS=+5V) 0.3 mAI_VL DC Current for Control Input (SW1, SW2) 0.3 mA


72 MP504 / MP505 | Revision 2015-03-10 | Specifications subject to change without notice.

on-wafer MeasureMents of MP504 (MultiPle Devices)



on-wafer MeasureMents of MP505 (MultiPle Devices)

All the parameters of the device correspond to the transmission mode for the branch #1 and the isolation mode for the branch #2.



on-wafer MeasureMents of MP505 (variations versus teMPerature)

All the parameters of the device correspond to the transmission mode for the branch #1 and the isolation mode for the branch #2.



Mechanical Data anD bonD PaD DesiGnations of MP504


Chip size = 1500×1500 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF and DC pads are 100×100 µm2.

Pad number Pad ID DC Voltage (V) Description1 VSA -5 Gate bias for the low noise amplifier (LNA)2 IN – RF Input3 VD +5 Drain bias for the LNA4 OUT – RF Output5 VG – Direct access to the gate of transistor of the LNA (1)

(1) It’s possible to use an external gate stabilization circuit instead integrated gate bias. This pad is NOT used in typical conditions.



Mechanical Data anD bonD PaD DesiGnations of MP505


Chip size = 2300×1500 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads are 100×100 µm2.

Pad number Pad ID DC Voltage (V) Description1 VSA -5 Gate bias for the low noise amplifier (LNA)2 SW2 +5 / 0 Control voltage #2 of the SPDT Switch3 SW1 0 / +5 Control voltage #1 of the SPDT Switch4 VSS +5 Reference voltage of the SPDT Switch5 VD +5 Drain bias for the LNA6 IN1 – RF Input #17 VD – Drain bias for the LNA. This pad can be used instead the pad #5 (1)

8 OUT – RF Output9 VG – Direct access to the gate of transistor of the LNA (1,2)

10 VSA – Gate bias for the LNA. This pad can be used instead the pad #1 (1)

11 IN2 – RF Input #2(1) This pad is NOT used in typical conditions; (2) It’s possible to use an external gate stabilization circuit instead integrated gate bias.


Part Number Package Type Version DescriptionMP504 Bare Die 01 L-band LNAMP505 Bare Die 01 L-band LNA with Integrated SPDT Switch




wire bonding Recommendation for RF pads (2, 4 of MP504 / 6, 8, 11 of MP505) is one wire: diameter 25 µm, length 450 µm. Recommenda-tion for DC and control pads (1, 3 of MP504 / 1 to 5 of MP505) is one wire: diameter 25 µm, length 700-1000 µm.

supply and bias arrangement The device is activated by setting the gate bias pad #1 to -5V, and the drain bias (pad #3 of MP504 / pad #5 of MP505) to +5V. Moreover, pad #4 of MP505 must be set to +5V. Each DC bias pad (VSA, VSS and VD) need to have DC bypass capacitance of 100 pF as close to the device as possible. CAUTION! Make sure the supply voltages are properly sequenced to ensure negative gate bias (VSA) is available before applying the positive drain bias (VD).

control bias for the sPDt switch of MP505 A block diagram and a control table are presented below.

aPPlication notes

Voltage to apply on the control pads StateVSS SW1 SW2 Branch #1 (IN1–OUT) Branch #2 (IN2–OUT)+5V 0V +5V Isolation Transmission+5V +5V 0V Transmission Isolation

Micran | MMIC and components | GaAs MMICs | Mixers


MD603GaAs MMIC fundamental mixer, 0.7 – 2.5 GHz

Main features

General DescriPtion

• Wide RF Bandwidth 0.7-2.5 GHz• Low Conversion Loss: 10.0 dB• Passive Double Balanced Topology• 12.0 dBm Input Power (P1dB)• 100% On-Wafer RF Tested

The MD603 is a passive double balanced mixer that can be used as an upconverter or downconverter between 0.7 and 2.5 GHz The miniature monolithic mixer is fabricated in a GaAs QSBD process, and requires no external components or matching cir-cuitry. It is ideally suited for applications where small size, no DC bias, and consistent IC performance are required. This mixer can operate over a wide LO drive input of +10 to +15 dBm. The MMICs use gold bond pads and backside metalli-zation and are fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

*Unless otherwise noted, all measurements performed as downconverter, IF = 0.1 GHz, LO = +13 dBm

Parameter ValueRF Input +20 dBmLO Drive +25 dBmIF Input TBDContinuous Pdiss (T = 85°C)(derate 7.6 mW/°C above 85°C) TBDThermal Resistance (active area to die bottom) TBDOperating Temperature -60° to +85°CStorage Temperature -60° to +125°C

Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range, RF & LO 0.7 – 2.5 GHzΔFIF Frequency Range, IF DC – 0.3 GHzCL Conversion Loss 10.0 11.0 dBNF Noise Figure (SSB) 10.0 11.0 dBILO-RF LO to RF Isolation 38.0 dBILO-IF LO to IF Isolation 38.0 dBIRF-IF RF to IF Isolation 14.0 dBIIP3 IP3 (Input) TBD dBmIIP2 IP2 (Input) TBD dBmP1dB 1 dB Gain Compression (Input) 12.0 dBm


electrical characteristics (ta = 25°c, if = 0.1 Ghz, lo = +13 dbm*)



on-wafer MeasureMents of MD603

RF = 1.5 GHz @ -10 dBm LO = 1.6 GHz @ 13 dBm All values in dBc below IF power level

mRF nLO0 1 2 3 4

0 xx 7 20 40 501 2 0 28 54 422 >70 60 59 60 >703 >70 >70 >70 61 >704 >70 >70 >70 >70 >70

conversion Gain vs. lo Drive

conversion Gain vs. if bandwidth

upconverter Performance conversion Gain vs. lo Drive Mxn spurious outputs

return loss vs. frequency

isolation



Mechanical Data anD bonD PaD DesiGnations of MD603


Chip size = 3100×2000 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF pads are: RF [1] and LO [3] input – 100×140 µm2; IF [2] output - 140×100 µm2.

Pad number Pad ID DC Voltage (V) Description1 RF – RF Input2 IF – IF Output3 LO – LO Input

Part Number Package Type Version DescriptionMD603 Bare Die 01 0.7-2.5 GHz Double balanced mixer

wire bonding Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Recommen-dation for RF pads is one wire: diameter 25 µm, length 450 µm.


Dc coupling All ports are DC coupled. For applications not requiring operation to DC, those ports should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary frequency range.


aPPlication notes




Main features

General DescriPtion


The MD604 is a passive double balanced mixer that can be used as an upconverter or downconverter between 1.5 and 5.5 GHz The miniature monolithic mixer is fabricated in a GaAs QZBD process, and requires no external components or matching cir-cuitry. It is ideally suited for applications where small size, no DC bias, and consistent IC performance are required. This mixer can operate over a wide LO drive input of +10 to +15 dBm. The MMICs use gold bond pads and backside metalli-zation and are fully protected with Silicon Nitride passivation to obtain the highest level of reliability.










mRF nLO0 1 2 3 4

0 xx 28 54 53 591 43 0 61 >70 >702 >70 >70 57 >70 >703 >70 >70 >70 64 >704 >70 >70 >70 >70 >70





isolation





Chip size = 2150×2000 µm2 (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF pads are 100×100 µm2.







aPPlication notes




Main features

General DescriPtion












mRF nLO0 1 2 3 4

0 xx 1 26 13 411 3 0 32 37 422 >70 >70 52 >70 >703 >70 >70 >70 65 >704 >70 >70 >70 >70 >70





isolation












aPPlication notes




Main features

General DescriPtion

• Wide RF Bandwidth 4.0-18.0 GHz• Low Conversion Loss: 10 dB• Passive Double Balanced Topology• 12 dBm Input Power (P1dB)• Small Chip Size 1.4 x 1.4 x 0.1 mm• 100% On-Wafer RF Tested











mRF nLO0 1 2 3 4

0 xx 6 13 27 391 11 0 30 34 442 >70 >70 58 >70 >703 >70 >70 >70 64 >704 >70 >70 >70 >70 >70





isolation












aPPlication notes




Main features

General DescriPtion

• Wide RF Bandwidth 9.0-20.0 GHz• Low Conversion Loss: 10.0 dB• Passive Double Balanced Topology• 11.0 dBm Input Power (P1dB)• Small Chip Size: 1.4 x 1.1 x 0.1 mm• 100% On-Wafer RF Tested











mRF nLO0 1 2 3 4

0 xx 19 31 30 -1 8 0 29 42 372 >70 63 61 >70 >703 >70 >70 >70 60 >704 - >70 >70 >70 >70





isolation












aPPlication notes




Main features

General DescriPtion

• Wide RF Bandwidth 24.0-37.0 GHz• Low Conversion Loss: 10.0 dB• Passive Double Balanced Topology• 10.0 dBm Input Power (P1dB)• Small Chip Size: 1.4 x 1.0 x 0.1 mm• 100% On-Wafer RF Tested











mRF nLO0 1 2 3 4

0 xx 17 - - -1 14 0 32 - -2 - 67 51 - -3 - - 71 65 -4 - - - - -


conversion Gain vs. if bandwidth upconverter Performance conversion Gain vs. lo Drive

Mxn spurious outputs

isolation

return loss vs. frequency to be determined












aPPlication notes




Main features

General DescriPtion

• Wide RF Bandwidth 22.0-38.0 GHz• Low Conversion Loss: 10.0 dB• Passive Double Balanced Topology• 10.0 dBm Input Power (P1dB)• Small Chip Size 1.4 x 0.75 x 0.1 mm• 100% On-Wafer RF Tested











mRF nLO0 1 2 3 4

0 xx -3 - - -1 1 0 27 - -2 - 53 44 52 -3 - - 62 55 -4 - - - - -


conversion Gain vs. if bandwidth upconverter Performance conversion Gain vs. lo Drive

Mxn spurious outputs

isolation

return loss vs. frequency to be determined












aPPlication notes



MD610GaAs MMIC I/Q mixer, 4.0 – 10.0 GHz

Main features

General DescriPtion

• Wide RF Bandwidth 4.0-10.0 GHz• Low Conversion Loss: 13.0 dB at each IF port• Passive I/Q Mixer Topology• 13.0 dBm Input Power (P1dB) at each IF port• 100% On-Wafer RF Tested

The MD610 is a I/Q mixer that can be used as either an Image Reject Mixer or a Single Sideband Upconverter between 4.0 and 10.0 GHz. The miniature monolithic mixer is fabricated in a GaAs QSBD process, and requires no external components or matching circuitry. It is ideally suited for applications where small size, no DC bias, and consistent IC performance are required. This mixer can operate over a wide LO drive input of +13 to +18 dBm. The chip utilizes two standard double balanced mixer cells and 90-degree hybrid. The MMICs use gold bond pads and backside metallization and are fully protected with Silicon Nitride passivation to obtain the highest level of reliability.


Parameter ValueRF Input +25 dBmLO Drive +25 dBmIF1 / IF2 Input TBDContinuous Pdiss (T = 85°C)(derate 7.6 mW/°C above 85°C) TBDThermal Resistance (active area to die bottom) TBDOperating Temperature -40° to +85°CStorage Temperature -55° to +125°C

Symbol Parameter Min. Typ. Max. Min. Typ. Max. UnitΔF Frequency Range, RF & LO 4.0 – 9.0 4.0 – 10.0 GHzΔFIF Frequency Range, IF DC – 1.0 DC – 0.5 GHzCL_IF1 Conversion Loss to IF1 12.5 12.5 dBCL_IF2 Conversion Loss to IF2 12.5 12.5 dBILO-RF LO to RF Isolation 36.0 34.0 dBILO-IF1 LO to IF1 Isolation 33.0 33.0 dBILO-IF2 LO to IF2 Isolation 31.0 31.0 dBIRF-IF1 RF to IF1 Isolation 18.0 18.0 dBIRF-IF2 RF to IF2 Isolation 18.0 18.0 dBIIP3 IP3 (Input) TBD TBD dBmIIP2 IP2 (Input) TBD TBD dBmP1dBIF1 1 dB Gain Compression (Input) IF1 13.0 13.0 dBmP1dBIF2 1 dB Gain Compression (Input) IF2 13.0 13.0 dBmΔA Amplitude Balance 0.5 0.8 dBΔPh Phase Balance 7.0 10.0 Deg






conversion Gain at if1 vs. lo Drive

upconverter Performance conversion Gain at if1 vs. lo Drive

conversion Gain at if1 vs. if frequency conversion Gain at if2 vs. if frequency








mRF nLO0 1 2 3 4

0 xx -1 26 7 171 14 0 39 34 592 >70 57 52 53 >703 >70 >70 >70 69 >704 >70 >70 64 >70 >70

mRF nLO0 1 2 3 4

0 xx -2 16 9 291 14 0 39 36 562 >70 60 54 56 >703 >70 >70 >70 >70 >704 >70 >70 >70 65 >70

amplitude balance vs. lo Drive

isolation

Mxn spurious outputs if1 Mxn spurious outputs if2

return loss

Phase balance vs. lo Drive






Pad number Pad ID DC Voltage (V) Description1 RF – RF Input2 LO – LO Input3 IF2 – IF2 Output4 IF1 – IF1 Output

Part Number Package Type Version DescriptionMD610 Bare Die 01 4.0-10.0 GHz I/Q mixer



Dc coupling Ports LO [2], IF1 [4] and IF2 [3] are DC coupled. For applications not requiring operation to DC, those ports should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary frequency range. Port RF [1] is AC coupled and matched to 50 Ohms.


aPPlication notes




Main features

General DescriPtion


The MD611 is a I/Q mixer that can be used as either an Image Reject Mixer or a Single Sideband Upconverter between 11.0 and 17.5 GHz. The miniature monolithic mixer is fabricated in a GaAs QZBD process, and requires no external components or matching circuitry. It is ideally suited for applications where small size, no DC bias, and consistent IC performance are required. This mixer can operate over a wide LO drive input of +13 to +18 dBm. The chip utilizes two standard double balanced mixer cells and 90-degree hybrid. The MMICs use gold bond pads and backside metallization and are fully protected with Silicon Nitride passivation to obtain the highest level of reliability.



















mRF nLO0 1 2 3 4

0 xx -5 -1 1 -1 22 0 41 45 442 59 >70 41 >70 >703 >70 >70 >70 72 >704 - >70 >70 >70 >70

mRF nLO0 1 2 3 4

0 xx -2 7 4 -1 17 0 35 47 502 64 >70 39 >70 >703 >70 >70 >70 69 >704 >70 >70 >70 >70 >70


isolation


return loss













aPPlication notes




Main features

General DescriPtion


The MD613 is a I/Q mixer that can be used as either an Image Reject Mixer or a Single Sideband Upconverter between 7.0 and 13.0 GHz. The miniature monolithic mixer is fabricated in a GaAs QSBD process, and requires no external components or matching circuitry. It is ideally suited for applications where small size, no DC bias, and consistent IC performance are required. This mixer can operate over a wide LO drive input of +13 to +18 dBm. The chip utilizes two standard double balanced mixer cells and 90-degree hybrid. The MMICs use gold bond pads and backside metallization and are fully protected with Silicon Nitride passivation to obtain the highest level of reliability.



















mRF nLO0 1 2 3 4

0 xx 2 13 9 161 13 0 20 27 542 >70 63 55 >70 >703 >70 >70 >70 69 >704 >70 >70 >70 >70 >70

mRF nLO0 1 2 3 4

0 xx -4 17 16 231 13 0 19 29 572 >70 59 55 >70 >703 >70 >70 >70 >70 >704 >70 >70 >70 >70 >70


isolation


return loss













aPPlication notes

Micran | MMIC and components | GaAs MMICs | Power Detectors


MD90110 MHz – 50 GHz Power Detector

Main features

General DescriPtion

• Input signal frequency range: 10 MHz to 50 GHz• Input signal dynamic range: –50 to +14 dBm• Square-law detection up to +20 dBm• Well matched to 50-Ohm transmission line• Positive, negative or differential voltage output• No DC bias required

The MD901 is an absorbed power detector MMIC that covers wide frequency and dynamic ranges of input RF signal. This MMIC is based on GaAs low-barrier diode QZBD process and requires no DC bias for operation. The MD901 uses golden pads and backside metallization, front side is protected with silicon nitride. The MD901 includes two detector stages that can be used to extend square-law range of detection.

Parameter ValueRF input power (CW) +20 dBmBurnout power +24 dBmOperating Temperature –40° to +85°CStorage Temperature –55° to +150°C


tyPical characteristics (ta = 25°c)

Differential output voltage vs. input Power

square-law Deviation vs. input Power




Mechanical Data

MMic scheMatic

Chip size 1100×1000 µm2 (before wafer dicing); Die thickness 100 µm; Bond pad location is shown as a distance from 0-point to the center of the bond pad; Bond pad and backside metallization: gold.

Differential output voltage is obtained between Vout_Pos and Vout_Neg pads and matches following: Vout_Low_Dif= |Vout_Low_Pos| + |Vout_Low_Neg| Vout_High_Dif= |Vout_High_Pos| + |Vout_High_Neg|

Pad number Pad ID Pad Size (X×Y) Description1 RF_Input 160×160 RF input2 Vout_Low_Pos 100×100 Positive voltage output (over GND) from low-power stage3 Vout_High_Pos Positive voltage output (over GND) for high-power stage4 Vout_Low_Neg Negative voltage output (over GND) from low-power stage5 Vout_High_Neg Negative voltage output (over GND) from high-power stage


Part Number Package Type Version DescriptionMD901 Bare Die 02 10 MHz – 50 GHz Power Detector





aPPlication notes




Main features

General DescriPtion

• Input signal frequency range: 10 MHz to 40 GHz• Input signal dynamic range: –40 to +20 dBm• Insertion loss: < 2.0 dB• Square-law detection up to +5 dBm input power• Negative output voltage• No DC bias required

The MD902 is a directional power detector MMIC that covers wide frequency and dynamic ranges of input RF signal. This MMIC is based on GaAs low-barrier diode QZBD process and requires no DC bias for operation. The MD902 uses golden pads and backside metallization, front side is protected with silicon nitride.




output voltage vs. input Power

return loss vs. frequency Directivity vs. frequency

insertion loss vs. frequency



Mechanical Data


Pad number Pad ID Pad Size (X×Y) Description1 RF_Input 160×160 RF input2 RF_Output RF output3 Vout_Neg 100×100 Negative voltage output (over GND)


Part Number Package Type Version DescriptionMD902 Bare Die 02 10 MHz – 40 GHz Directional Power Detector




aPPlication notes




Main features

General DescriPtion

• Input signal frequency range: 10 MHz to 50 GHz• Input signal dynamic range: –50 to +14 dBm• Square-law detection up to –10 dBm• Well matched to 50-Ohm transmission line• Positive, negative or differential voltage output• No DC bias required

The MD903 is an absorbed power detector MMIC that covers wide frequency and dynamic ranges of input RF signal. This MMIC is based on GaAs low-barrier diode QZBD process and requires no DC bias for operation. The MD903 uses golden pads and backside metallization, front side is protected with silicon nitride.




Differential output voltage vs. input Power

square-law Deviation vs. input Power output voltage Deviation vs. temperature





Differential output voltage is obtained between Vout_Pos and Vout_Neg pads and matches following: Vout_Dif = |Vout_Pos| + |Vout_Neg|

Pad number Pad ID Pad Size (X×Y) Description1 RF_Input 175×160 RF input2 Vout_Pos 150×150 Positive voltage output (over GND)3 Vout_Neg Negative voltage output (over GND)


Part Number Package Type Version DescriptionMD903 Bare Die 02 10 MHz – 50 GHz Power Detector





aPPlication notes

Mechanical Data

MMic scheMatic

Micran | MMIC and components | GaAs dIodes

117ZB-28 | Revision 2015-09-04 | Specifications subject to change without notice.

ZB-28Zero Bias Diode

Main features

General DescriPtion

• Low junction capacitance• Functional through W-band• Input signal dynamic range: –60 to +14 dBm

The ZB-28 is a zero bias beam-lead diode suitable for mixer and zero bias detector applications in a wide frequency and dynamic range.

Parameter ValueRF Input Power (CW) +14 dBmBurnout Power +20 dBmReverse Voltage 4 VForward Current 15 mAOperating Temperature –40° to +85°CStorage Temperature –55° to +150°C


electrical characteristics (ta = 25°c)

DioDe MoDel ParaMeters

Symbol Parameter Min. Typ. Max. UnitCT Total Capacitance 35 41 fFCJ Junction Capacitance 24 30 fFRV Video Resistance 1.6 2.0 kOhmG Voltage sensitivity 300 400 mV/mWTSS Tangential Sensitivity -60 dBm

Parameter VD1 VD2 UnitsCJ 12 12 fFRP 27 100 Ohmn 1.13 32 -Is 1.1E-5 4.0E-5 AL 0.3 0.3 nHCP 11 11 fF


118 ZB-28 | Revision 2015-09-04 | Specifications subject to change without notice.

Mechanical Data

Metallization: gold

Dimension Value UnitsA 800 umB 230C 270D 270E 160F 55G 3





aPPlication notes


119PL-1050, PL-2100 | Revision 2.0 2014-08-26 | Specifications subject to change without notice.

PL-1050, PL-2100Pin Diodes

General DescriPtion

PL-1050 and PL-2100 are GaAs vertical Pin diode chips for RF switching and limiting applications.

Parameter PL-1050 PL-2100Ambient temperature –60...+85 ºCReverse voltage 40 V 100 VForward current 100 mА 200 mА


Pl-1050 electrical characteristics (ta = 25°c)

Pl-2100 electrical characteristics (ta = 25°c)

tyPical characteristics (ta= 25 ºc, f=1 Ghz, Pin=1 mw)

Symbol Parameter Min. Typ. Max. Unitτ Minority carrier lifetime (@IF=10 mA) – 5 – nsCJ Junction capacitance (@UR=0 V) – 0.15 0.17 pFVF Forward voltage (@IF=10 mA) 1.20 1.23 1.30 VΘ Thermal impedance – 150 – ºC/W

Symbol Parameter Min. Typ. Max. Unitτ Minority carrier lifetime (@IF=10 mA) – 20 – nsCJ Junction capacitance (@UR=0 V) – 0.17 0.19 pFVF Forward voltage (@IF=10 mA) 1.15 1.19 1.25 VΘ Thermal impedance – 70 – ºC/W


120 PL-1050, PL-2100 | Revision 2.0 2014-08-26 | Specifications subject to change without notice.

Mechanical Data

Anode: Au-metalized round contact pad. Cathode: Au-metalized back side.

These devices are designed to be mounted with electrically conductive epoxy or with low temperature solder preform. Wedge thermocompression bonding or ball bonding may be used to attach ribbons or wires to the anode bonding pad. All die attach and bonding methods should be compatible with gold metal. Do not expose die to a temperature greater than 300ºC for more than 10 seconds.

MountinG anD bonDinG techniques


Symbol Min. Typ. Max. UnitA 330 350 370 umB – A –C 40 (89) 43 (92) 46 (95)D 85 100 110




aPPlication notes

This information is subject to change without notice.Published in Russia, January 22, 2016© MICRAN JSC 1991 - 2016

Micran, Research & Production Company51d Kirova Avenue, Tomsk, Russia, 634041phone: +7 3822 413 403fax: +7 3822 423 [email protected]

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