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NJG1133MD7 - 1 - Ver.2013-04-23 UMTS Triple Band LNA GaAs MMIC GENERAL DISCRIPTION PACKAGE OUTLINE NJG1133MD7 is a triple band LNA IC designed for UMTS and LTE. This IC has a LNA pass-through function to select high gain mode or suitable low gain mode. The LNA of 1.7GHz band can be used to 1.5GHz band by changing application circuit. An ultra-small and ultra-thin package of EQFN14-D7 is adopted. APPLICATIONS 2.1GHz, 1.7GHz and 800MHz triple band of standard condition application Any dual High-band and single Low-band combination for LTE and UMTS applications, like Band1,2 and 5,Band1,3 and 5,Band1,2 and 8 FEATURES Low operation voltage +2.8V typ. Low control voltage +1.8V typ. Low current consumption 2.3mA typ. @High Gain Mode 48μA typ. @Low Gain Mode Small and thin package EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm typ.) [High Gain Mode] High gain 16.0dB typ. @f RF =2140MHz, 885MHz, 1860MHz, 1495MHz Low noise figure 1.35dB typ. @f RF =2140MHz, 1860MHz 1.40dB typ. @f RF =885MHz 1.55dB typ. @f RF =1495MHz High input IP3 +0.5dBm typ. @f RF =2140.0+2140.1MHz, Pin=-30dBm -2.0dBm typ. @f RF =885.0+885.1MHz, Pin=-30dBm 0dBm typ. @f RF =1860.0+1860.1MHz, Pin=-30dBm 0dBm typ. @f RF =1495.0+1495.1MHz, Pin=-30dBm [Low Gain Mode] Gain -3.5dB typ. @f RF =2140MHz -3.0dB typ. @f RF =885MHz, 1495MHz -4.0dB typ. @f RF =1860MHz High input IP3 +12dBm typ. @f RF =2140.0+2140.1MHz, Pin=-16dBm +12dBm typ. @f RF =885.0+885.1MHz, Pin=-20dBm +15dBm typ. @f RF =1860.0+1860.1MHz, Pin=-16dBm +15dBm typ. @f RF =1495.0+1495.1MHz, Pin=-16dBm PIN CONFIGURATION Pin Connection 1. GND 8. GND 2. VCTL2 9. GND 3. VCTL1 10. RFIN3 (1.7G/1.5GHz) 4. GND 11. GND 5. RFOUT1 (800MHz) 12. RFIN2 (2.1GHz) 6. RFOUT2 (2.1GHz) 13. RFIN1 (800MHz) 7. RFOUT3 (1.7G/1.5GHz) 14. VCTL3 NJG1133MD7 (Top View) 13 RFIN2 RFIN1 RFOUT2 GND VCTL2 VCTL3 VCTL1 Logic Circuit RFOUT3 RFIN3 RFOUT1 1.7GHz Band Bias Circuit Bias Circuit Bias Circuit GND 2.1GHz Band 800MHz Band 6 5 7 14 12 13 GND 2 4 1 3 10 8 11 9 GND GND 1pin 1.7GHz Band Note: Specifications and description listed in this datasheet are subject to change without prior notice. Note: For except of standard condition applications please refer to Application Note

NJG1133MD7 UMTS Triple Band LNA GaAs MMIC · 2019-07-31 · NJG1133MD7 Ver.2013-04-23 - 1 - UMTS Triple Band LNA GaAs MMIC GENERAL DISCRIPTION PACKAGE OUTLINE NJG1133MD7 is a triple

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  • NJG1133MD7

    - 1 -Ver.2013-04-23

    UMTS Triple Band LNA GaAs MMIC

    ����GENERAL DISCRIPTION ����PACKAGE OUTLINE

    NJG1133MD7 is a triple band LNA IC designed for UMTS and LTE.

    This IC has a LNA pass-through function to select high gain mode

    or suitable low gain mode. The LNA of 1.7GHz band can be used

    to 1.5GHz band by changing application circuit.

    An ultra-small and ultra-thin package of EQFN14-D7 is adopted.

    ����APPLICATIONS

    2.1GHz, 1.7GHz and 800MHz triple band of standard condition application

    Any dual High-band and single Low-band combination for LTE and UMTS applications,

    like Band1,2 and 5,Band1,3 and 5,Band1,2 and 8

    ����FEATURES �Low operation voltage +2.8V typ. �Low control voltage +1.8V typ. �Low current consumption 2.3mA typ. @High Gain Mode

    48µA typ. @Low Gain Mode �Small and thin package EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm typ.)

    [High Gain Mode]

    ●High gain 16.0dB typ. @fRF=2140MHz, 885MHz, 1860MHz, 1495MHz

    ●Low noise figure 1.35dB typ. @fRF=2140MHz, 1860MHz 1.40dB typ. @fRF=885MHz 1.55dB typ. @fRF=1495MHz

    ●High input IP3 +0.5dBm typ. @fRF=2140.0+2140.1MHz, Pin=-30dBm -2.0dBm typ. @fRF=885.0+885.1MHz, Pin=-30dBm 0dBm typ. @fRF=1860.0+1860.1MHz, Pin=-30dBm 0dBm typ. @fRF=1495.0+1495.1MHz, Pin=-30dBm [Low Gain Mode]

    ●Gain -3.5dB typ. @fRF=2140MHz -3.0dB typ. @fRF=885MHz, 1495MHz -4.0dB typ. @fRF=1860MHz

    ●High input IP3 +12dBm typ. @fRF=2140.0+2140.1MHz, Pin=-16dBm +12dBm typ. @fRF=885.0+885.1MHz, Pin=-20dBm +15dBm typ. @fRF=1860.0+1860.1MHz, Pin=-16dBm +15dBm typ. @fRF=1495.0+1495.1MHz, Pin=-16dBm

    ����PIN CONFIGURATION

    Pin Connection 1. GND 8. GND 2. VCTL2 9. GND 3. VCTL1 10. RFIN3 (1.7G/1.5GHz) 4. GND 11. GND 5. RFOUT1 (800MHz) 12. RFIN2 (2.1GHz) 6. RFOUT2 (2.1GHz) 13. RFIN1 (800MHz) 7. RFOUT3 (1.7G/1.5GHz) 14. VCTL3

    NJG1133MD7

    (Top View)

    13

    RFIN2

    RFIN1RFOUT2

    GND

    VCTL2

    VCTL3

    VCTL1

    Logic

    Circuit

    RFOUT3

    RFIN3

    RFOUT1

    1.7GHz Band

    Bias

    Circuit

    Bias

    Circuit

    Bias

    Circuit

    GND

    2.1GHz Band

    800MHz Band

    6

    5

    7

    14

    12

    13

    GND2 41 3

    10 811 9GNDGND

    1pin

    1.7GHz

    Band

    Note: Specifications and description listed in this datasheet are subject to change without prior notice.

    Note: For except of standard condition applications please refer to Application Note

  • NJG1133MD7

    - 2 -

    ����ABSOLUTE MAXIMUM RATINGS

    Ta=+25°C, Zs=Zl=50Ω

    PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

    Operating voltage VDD 5.0 V

    Control voltage VCTL VCTL1,2,3 terminal 5.0 V

    Input power Pin +15 dBm

    Power dissipation PD 4-layer FR4 PCB with through-hole

    (74.2x74.2mm), Tj=150°C 1300 mW

    Operating temperature Topr -40~+85 °C

    Storage temperature Tstg -55~+150 °C

    ����ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)

    General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Operating voltage VDD 2.7 2.8 3.6 V

    Control voltage1 (High) VCTL1(H) 1.36 1.8 3.6 V

    Control voltage1 (Low) VCTL1(L) 0 0 0.3 V

    Control voltage 2 (High) VCTL2(H) 1.36 1.8 3.6 V

    Control voltage 2 (Low) VCTL2(L) 0 0 0.3 V

    Control voltage 3 (High) VCTL3(H) 1.36 1.8 3.6 V

    Control voltage 3 (Low) VCTL3(L) 0 0 0.3 V

    Operating current 1 2.1GHz Band High Gain mode

    IDD1 VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF OFF

    - 2.3 3.1 mA

    Operating current 2 800MHz Band high Gain mode

    IDD2 VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, RF OFF

    - 2.3 3.1 mA

    Operating current 3 1.7GHz Band High Gain mode

    IDD3 VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF OFF

    - 2.3 3.1 mA

    Operating current 4 1.5GHz Band High Gain mode

    IDD4 VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF OFF

    - 2.3 3.1 mA

    Operating current 5 IDD5 VCTL3=0V, RF OFF - 48 85 µA

    Control current 1 ICTL1 VCTL1=1.8V - 5.5 8.5 µA

    Control current 2 ICTL2 VCTL2=1.8V - 5.5 8.5 µA

    Control current 3 ICTL3 VCTL3=1.8V - 5.5 8.5 µA

  • NJG1133MD7

    - 3 -

    ����ELECTRICAL CHARACTERISTICS 2 (2.1GHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2140MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 1 Gain1 Exclude PCB & connector losses (IN: 0.09dB, OUT: 0.36dB)

    14.5 16.0 17.5 dB

    Noise figure 1 NF1 Exclude PCB & connector losses (IN: 0.09dB)

    - 1.35 1.5 dB

    Input Power at 1dB gain compression point 1

    P-1dB(IN)_1 -15.0 -11.5 - dBm

    Input 3rd order intercept point 1

    IIP3_1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm

    -9.0 +0.5 - dBm

    RF Input VSWR 1 VSWRi1 - 1.5 2.0

    RF Output VSWR 1 VSWRo1 - 2.0 2.5

    ����ELECTRICAL CHARACTERISTICS 3 (2.1GHz Band Low Gain Mode)

    General conditions: VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2140MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 2 Gain2 Exclude PCB & connector losses (IN: 0.09dB, OUT: 0.36dB)

    -5.0 -3.5 -2.0 dB

    Noise figure 2 NF2 Exclude PCB & connector losses (IN: 0.09dB)

    - 3.5 6.0 dB

    Input Power at 1dB gain compression point 2

    P-1dB(IN)_2 +5.0 +14.0 - dBm

    Input 3rd order intercept point 2

    IIP3_2 f1=fRF, f2=fRF+100kHz, Pin=-16dBm

    0 +12.0 - dBm

    RF Input VSWR 2 VSWRi2 - 1.6 2.0

    RF Output VSWR 2 VSWRo2 - 1.9 2.3

  • NJG1133MD7

    - 4 -

    ����ELECTRICAL CHARACTERISTICS 4 (800MHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=885MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 3 Gain3 Exclude PCB & connector losses (IN: 0.06dB, OUT: 0.16dB) 14.3 16.0 17.3 dB

    Noise figure 3 NF3 Exclude PCB & connector losses (IN: 0.06dB)

    - 1.40 1.65 dB

    Input Power at 1dB gain compression point 3

    P-1dB(IN)_3 -16.0 -9.5 - dBm

    Input 3rd order intercept point 3

    IIP3_3 f1=fRF, f2=fRF+100kHz, Pin=-30dBm

    -10.0 -2.0 - dBm

    RF Input VSWR 3 VSWRi3 - 1.8 2.3

    RF Output VSWR 3 VSWRo3 - 2.2 2.7

    ����ELECTRICAL CHARACTERISTICS 5 (800MHz Band Low Gain Mode)

    General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=885MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 4 Gain4 Exclude PCB & connector losses (IN: 0.06dB, OUT: 0.16dB)

    -4.5 -3.0 -2.0 dB

    Noise figure 4 NF4 Exclude PCB & connector losses (IN: 0.06dB) - 3.0 6.0 dB

    Input Power at 1dB gain compression point 4

    P-1dB(IN)4 +4.5 +17.0 - dBm

    Input 3rd order intercept point 4

    IIP3_4 f1=fRF, f2=fRF+100kHz, Pin=-20dBm

    +2.0 +12.0 - dBm

    RF Input VSWR 4 VSWRi4 - 1.4 2.1

    RF Output VSWR 4 VSWRo4 - 1.8 2.2

  • NJG1133MD7

    - 5 -

    ����ELECTRICAL CHARACTERISTICS 6 (1.7GHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1860MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 5 Gain5 Exclude PCB & connector losses (IN: 0.10dB, OUT: 0.31dB) 14.5 16.0 17.5 dB

    Noise figure 5 NF5 Exclude PCB & connector losses (IN: 0.10dB) - 1.35 1.6 dB

    Input Power at 1dB gain compression point 5

    P-1dB(IN)_5 -16.0 -8.0 - dBm

    Input 3rd order intercept point 5

    IIP3_5 f1=fRF, f2=fRF+100kHz, Pin=-30dBm

    -9.0 0 - dBm

    RF Input VSWR 5 VSWRi5 - 2.1 2.6

    RF Output VSWR 5 VSWRo5 - 1.8 2.2

    ����ELECTRICAL CHARACTERISTICS 7 (1.7GHz Band Low Gain Mode)

    General conditions: VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1860MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 6 Gain6 Exclude PCB & connector losses (IN: 0.10dB, OUT: 0.31dB)

    -5.5 -4.0 -2.0 dB

    Noise figure 6 NF6 Exclude PCB & connector losses (IN: 0.10dB)

    - 4.0 6.5 dB

    Input Power at 1dB gain compression point 6

    P-1dB(IN)_6 +4.0 +16.0 - dBm

    Input 3rd order intercept point 6

    IIP3_6 f1=fRF, f2=fRF+100kHz, Pin=-16dBm

    0 +15.0 - dBm

    RF Input VSWR 6 VSWRi6 - 1.7 2.2

    RF Output VSWR 6 VSWRo6 - 2.4 2.7

  • NJG1133MD7

    - 6 -

    ����ELECTRICAL CHARACTERISTICS 8 (1.5GHz Band High Gain Mode) General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, fRF=1495MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 7 Gain7 Exclude PCB & connector losses (IN: 0.09dB, OUT: 0.30dB)

    14.5 16.0 18.0 dB

    Noise figure 7 NF7 Exclude PCB & connector losses (IN: 0.09dB)

    - 1.55 1.75 dB

    Input Power at 1dB gain compression point 7

    P-1dB(IN)_7 -16.0 -9.0 - dBm

    Input 3rd order intercept point 7

    IIP3_7 f1=fRF, f2=fRF+100kHz, Pin=-30dBm

    -6.0 0 - dBm

    RF Input VSWR 7 VSWRi7 - 2.5 2.8

    RF Output VSWR 7 VSWRo7 - 1.8 2.4

    ����ELECTRICAL CHARACTERISTICS 9 (1.5GHz Band Low Gain Mode)

    General conditions: VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V, fRF=1495MHz, Ta=+25°C,

    Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Small signal gain 8 Gain8 Exclude PCB & connector losses (IN: 0.09dB, OUT: 0.30dB)

    -5.0 -3.0 -2.0 dB

    Noise figure 8 NF8 Exclude PCB & connector losses (IN: 0.09dB)

    - 3.0 6.0 dB

    Input Power at 1dB gain compression point 8

    P-1dB(IN)_8 +4.0 +16.0 - dBm

    Input 3rd order intercept point 8

    IIP3_8 f1=fRF, f2=fRF+100kHz, Pin=-16dBm

    0 +15.0 - dBm

    RF Input VSWR 8 VSWRi8 - 1.5 2.1

    RF Output VSWR 8 VSWRo8 - 1.8 2.3

    ����ELECTRICAL CHARACTERISTICS 10

    General conditions: VDD=2.7V, Ta=+25°C, Zs=Zl=50Ω, with application circuit

    PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

    Gain dynamic range 1

    (2.1GHz Band) GDR_1

    ([email protected] Gain mode) - ([email protected] Gain mode), f=2140MHz VCTL1=0V, VCTL2=0V, VCTL3=0 or 1.8V

    17.5 19.5 21.0 dB

    Gain dynamic range 2

    (800MHz Band) GDR_2

    ([email protected] Gain mode) - ([email protected] Gain mode), f=885MHz VCTL1=1.8V, VCTL2=0V, VCTL3=0 or 1.8V

    17.5 19.0 20.5 dB

    Gain dynamic range 3

    (1.7GHz Band) GDR_3

    ([email protected] Gain mode) - ([email protected] Gain mode), f=1860MHz VCTL1=0V, VCTL2=1.8V, VCTL3=0 or 1.8V

    18.0 20.0 21.5 dB

    Gain dynamic range 4

    (1.5GHz Band) GDR_4

    ([email protected] Gain mode) - ([email protected] Gain mode), f=1495MHz VCTL1=1.8V, VCTL2=1.8V, VCTL3=0 or 1.8V

    17.5 19.5 21.0 dB

  • NJG1133MD7

    - 7 -

    � TRUTH TABLE

    “L”=0 ~ 0.30V, “H”=1.36 ~ 1.9 V

    �TERMINAL INFORMATION

    Notes: Ground terminal (No.1, 4, 8, 9, 11) should be connected with the ground plane as short as

    possible.

    Control voltage Operating state

    2.1GHz Band 800MHz Band 1.7GHz(or 1.5GHz)

    Band VCTL1 (Band Sel1)

    VCTL2 (Band Sel2)

    VCTL3 (Gain Sel1)

    LNA Bypass LNA Bypass LNA Bypass

    L L L OFF ON OFF ON OFF ON

    L L H ON OFF OFF OFF OFF OFF

    H L L OFF ON OFF ON OFF ON

    H L H OFF OFF ON OFF OFF OFF

    L H L OFF ON OFF ON OFF ON

    L H H OFF OFF OFF OFF ON OFF

    H H L OFF ON OFF ON OFF ON

    H H H OFF OFF OFF OFF ON OFF

    No. SYMBOL DESCRIPTION

    1 GND GND terminal (0V)

    2 VCTL2

    3 VCTL1

    Control voltage supply terminal. The frequency band (2GHz / 800MHz / 1.7GHz or 1.5GHz) is selected by 2bit control signal. (Please refer to truth table.)

    4 GND GND terminal (0V)

    5 RFOUT1 Output terminal of 800MHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L3) to connect power supply.

    6 RFOUT2 Output terminal of 2.1GHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L6) to connect power supply.

    7 RFOUT3 Output terminal of 1.7GHz(or 1.5GHz) band. This terminal is also the power supply terminal of the LNA, please use inductor (L9) to connect power supply.

    8 GND GND terminal (0V)

    9 GND GND terminal (0V)

    10 RFIN3 RF input terminal of 1.7GHz(or 1.5GHz) band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required.

    11 GND GND terminal (0V)

    12 RFIN2 RF input terminal of 2.1GHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required.

    13 RFIN1 RF input terminal of 800MHz band. The RF signal is input through external matching circuit connected to this terminal. The DC blocking capacitor is not required.

    14 VCTL3 Control voltage supply terminal. High gain mode or low gain mode is selected by applying this terminal.

  • NJG1133MD7

    - 8 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    -30

    -25

    -20

    -15

    -10

    -5

    0

    5

    10

    -40 -30 -20 -10 0 10

    2.1GHz @High Gain

    Pout vs. Pin(f=2140MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=-9.3dBm

    0

    5

    10

    15

    20

    -40 -30 -20 -10 0 10

    2.1GHz @High Gain

    Gain, IDD vs. Pin(f=2140MHz)

    0

    2

    4

    6

    8

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=-9.3dBm

    IDD (mA)

    IDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2 2.05 2.1 2.15 2.2 2.25 2.3

    2.1GHz @High Gain

    NF, Gain vs. frequency(f=2.0~2.3GHz)

    4

    6

    8

    10

    12

    14

    16

    18

    20

    Gain (dB)

    frequency (GHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10

    2.1GHz @High Gain

    Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=-0.1dBm

    IM3

    Condition

    Ta=+25℃,

    VDD =2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=1.85

  • NJG1133MD7

    - 9 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18

    2.1GHz @High Gain

    P-1dB(IN) vs. frequency(f=2.11~2.17GHz)

    frequency (GHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    12

    13

    14

    15

    16

    17

    18

    19

    20

    2.1 2.12 2.14 2.16 2.18 2.2

    2.1GHz @High Gain

    OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm)

    -2

    -1

    0

    1

    2

    3

    4

    5

    6

    frequency (GHz)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 10 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    10

    11

    12

    13

    14

    15

    16

    17

    18

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @High Gain

    Gain, NF vs. VDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @High Gain

    OIP3, IIP3 vs. VDD

    -3

    -2

    -1

    0

    1

    2

    3

    4

    5

    VDD (V)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    Condition

    Ta=+25℃,

    f=2140MHz,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f1=2140MHz, f2=f1+100kHz,

    Pin=-30dBm,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    -10

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @High Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @High Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

    Condition

    Ta=+25℃,

    f=2140MHz,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=2140MHz,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 11 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @High Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (mA)

    Condition

    Ta=+25℃,

    RF=OFF,

    VCTL1=0V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 12 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @High Gain

    Gain, NF vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    7

    8

    9

    10

    11

    12

    13

    14

    15

    16

    17

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @High Gain

    OIP3H1, IIP3H1 vs. Temperature(f=2.14+2.1401GHz, Pin=-30dBm, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    3

    4

    5

    Temperature (oC)

    OIP3H1

    OIP3H1 (dBm)

    IIP3H1 (dBm)

    IIP3H1

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @High Gain

    P-1dB(IN) vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @High Gain

    VSWRi, VSWRo vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 13 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    0

    1

    2

    3

    4

    5

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @High Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (mA)

  • NJG1133MD7

    - 14 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    Condition:Ta=+25℃, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 15 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode)

    0

    5

    10

    15

    20

    0 5 10 15 20

    2.1GHz @High Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 16 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    -50

    -40

    -30

    -20

    -10

    0

    10

    20

    -40 -30 -20 -10 0 10 20

    2.1GHz @Low Gain

    Pout vs. Pin(f=2140MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=+14.1dBm

    -12

    -10

    -8

    -6

    -4

    -2

    0

    -40 -30 -20 -10 0 10 20

    2.1GHz @Low Gain

    Gain, IDD vs. Pin(f=2140MHz)

    25

    30

    35

    40

    45

    50

    55

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=+14.1dBm

    IDD (uA)

    IDD

    0

    2

    4

    6

    8

    10

    12

    14

    2 2.05 2.1 2.15 2.2 2.25 2.3

    2.1GHz @Low Gain

    NF, Gain vs. frequency(f=2.0~2.3GHz)

    -14

    -12

    -10

    -8

    -6

    -4

    -2

    0

    Gain (dB)

    frequency (GHz)

    Gain

    NFNF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10 20

    2.1GHz @Low Gain

    Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=+11.2dBm

    IM3

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD=2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 17 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 4

    6

    8

    10

    12

    14

    16

    18

    20

    2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18

    2.1GHz @Low Gain

    P-1dB(IN) vs. frequency(f=2.11~2.17GHz)

    frequency (GHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    6

    7

    8

    9

    10

    11

    12

    13

    14

    2.1 2.12 2.14 2.16 2.18 2.2

    2.1GHz @Low Gain

    OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm)

    6

    7

    8

    9

    10

    11

    12

    13

    14

    frequency (GHz)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 18 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    -6

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @Low Gain

    Gain, NF vs. VDD

    -2

    -1

    0

    1

    2

    3

    4

    5

    6

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    5

    6

    7

    8

    9

    10

    11

    12

    13

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @Low Gain

    OIP3, IIP3 vs. VDD

    5

    6

    7

    8

    9

    10

    11

    12

    13

    VDD (V)

    OIP3

    OIP3 (dBm) IIP3

    IIP3 (dBm)

    12

    13

    14

    15

    16

    17

    18

    19

    20

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @Low Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @Low Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

    Condition

    Ta=+25℃,

    f=2140MHz,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    f1=2140MHz, f2=f1+100kHz,

    Pin=-16dBm,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=2140MHz,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=2140MHz,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 19 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    25

    30

    35

    40

    45

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    2.1GHz @Low Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (uA)

    Condition

    Ta=+25℃,

    RF=OFF,

    VCTL1=0V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 20 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    -1

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @Low Gain

    Gain, NF vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

    2

    3

    4

    5

    6

    7

    8

    9

    10

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    4

    5

    6

    7

    8

    9

    10

    11

    12

    13

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @Low Gain

    OIP3, IIP3 vs. Temperature(f=2.14+2.1401GHz, Pin=-16dBm, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

    7

    8

    9

    10

    11

    12

    13

    14

    15

    16

    Temperature (oC)

    OIP3

    OIP3 (dBm)

    IIP3 (dBm)

    IIP3

    6

    8

    10

    12

    14

    16

    18

    20

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @Low Gain

    P-1dB(IN) vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @Low Gain

    VSWRi, VSWRo vs. Temperature(f=2.14GHz, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 21 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    0

    10

    20

    30

    40

    50

    -60 -40 -20 0 20 40 60 80 100

    2.1GHz @Low Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 22 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    Condition:Ta=+25℃, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 23 -

    �ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode)

    0

    5

    10

    15

    20

    0 5 10 15 20

    2.1GHz @Low Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 24 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    -30

    -25

    -20

    -15

    -10

    -5

    0

    5

    10

    -40 -30 -20 -10 0 10

    800MHz @High Gain

    Pout vs. Pin(f=885MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=-9.3dBm

    0

    5

    10

    15

    20

    -40 -30 -20 -10 0 10

    800MHz @High Gain

    Gain, IDD vs. Pin(f=885MHz)

    0

    2

    4

    6

    8

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=-9.3dBm

    IDD (mA)

    IDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    750 800 850 900 950 1000

    800MHz @High Gain

    NF, Gain vs. frequency(f=750~1000MHz)

    4

    6

    8

    10

    12

    14

    16

    18

    20

    Gain (dB)

    frequency (MHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10

    800MHz @High Gain

    Pout, IM3 vs. Pin(f1=885MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=-2.1dBm

    IM3

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 25 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    860 870 880 890 900 910

    800MHz @High Gain

    P-1dB(IN) vs. frequency(f=869~900MHz)

    frequency (MHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    9

    10

    11

    12

    13

    14

    15

    16

    17

    860 870 880 890 900 910

    800MHz @High Gain

    OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm)

    -4

    -3

    -2

    -1

    0

    1

    2

    3

    4

    frequency (MHz)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 26 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    10

    11

    12

    13

    14

    15

    16

    17

    18

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @High Gain

    Gain, NF vs. VDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @High Gain

    OIP3, IIP3 vs. VDD

    -3

    -2

    -1

    0

    1

    2

    3

    4

    5

    VDD (V)

    OIP3OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    -10

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @High Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @High Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

    Condition

    Ta=+25℃,

    f1=885MHz, f2=f1+100kHz,

    Pin=-30dBm,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=885MHz,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=885MHz,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=885MHz,

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 27 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @High Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (mA)

    Condition

    Ta=+25℃,

    RF=OFF

    VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 28 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    -60 -40 -20 0 20 40 60 80 100

    800MHz @High Gain

    Gain, NF vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    7

    8

    9

    10

    11

    12

    13

    14

    15

    16

    17

    -60 -40 -20 0 20 40 60 80 100

    800MHz @High Gain

    OIP3H1, IIP3H1 vs. Temperature(f=885+885.1MHz, Pin=-30dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

    -6

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    3

    4

    Temperature (oC)

    OIP3H1

    OIP3H1 (dBm)

    IIP3H1 (dBm)

    IIP3H1

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    -60 -40 -20 0 20 40 60 80 100

    800MHz @High Gain

    P-1dB(IN) vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    800MHz @High Gain

    VSWRi, VSWRo vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 29 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    0

    10

    20

    30

    40

    50

    -60 -40 -20 0 20 40 60 80 100

    800MHz @Low Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 30 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 31 -

    �ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode)

    0

    5

    10

    15

    20

    0 5 10 15 20

    800MHz @High Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

  • NJG1133MD7

    - 32 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    -50

    -40

    -30

    -20

    -10

    0

    10

    20

    -40 -30 -20 -10 0 10 20

    800MHz @Low Gain

    Pout vs. Pin(f=885MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=+17.7dBm

    -12

    -10

    -8

    -6

    -4

    -2

    0

    -40 -30 -20 -10 0 10 20

    800MHz @Low Gain

    Gain, IDD vs. Pin(f=885MHz)

    25

    30

    35

    40

    45

    50

    55

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=+17.7dBm

    IDD (uA)

    IDD

    0

    2

    4

    6

    8

    10

    12

    14

    750 800 850 900 950 1000

    800MHz @Low Gain

    NF, Gain vs. frequency(f=750~1000MHz)

    -14

    -12

    -10

    -8

    -6

    -4

    -2

    0

    Gain (dB)

    frequency (MHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10 20

    800MHz @Low Gain

    Pout, IM3 vs. Pin(f1=885MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=+14.5dBm

    IM3

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 33 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    6

    8

    10

    12

    14

    16

    18

    20

    22

    860 870 880 890 900 910

    800MHz @Low Gain

    P-1dB(IN) vs. frequency(f=869~900MHz)

    frequency (MHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    9

    10

    11

    12

    13

    14

    15

    16

    17

    860 870 880 890 900 910

    800MHz @Low Gain

    OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm)

    9

    10

    11

    12

    13

    14

    15

    16

    17

    frequency (MHz)

    OIP3

    OIP3 (dBm) IIP3

    IIP3 (dBm)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 34 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    -6

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @Low Gain

    Gain, NF vs. VDD

    -2

    -1

    0

    1

    2

    3

    4

    5

    6

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    8

    9

    10

    11

    12

    13

    14

    15

    16

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @Low Gain

    OIP3, IIP3 vs. VDD

    9

    10

    11

    12

    13

    14

    15

    16

    17

    VDD (V)

    OIP3

    OIP3 (dBm) IIP3

    IIP3 (dBm)

    12

    13

    14

    15

    16

    17

    18

    19

    20

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @Low Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @Low Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

    Condition

    Ta=+25℃,

    f1=885MHz, f2=f1+100kHz,

    Pin=-20dBm,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=885MHz,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=885MHz,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=885MHz,

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 35 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    25

    30

    35

    40

    45

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    800MHz @Low Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (uA)

    Condition

    Ta=+25℃,

    RF=OFF

    VCTL1=1.8V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 36 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    -1

    -60 -40 -20 0 20 40 60 80 100

    800MHz @Low Gain

    Gain, NF vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

    2

    3

    4

    5

    6

    7

    8

    9

    10

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    4

    5

    6

    7

    8

    9

    10

    11

    12

    13

    -60 -40 -20 0 20 40 60 80 100

    800MHz @Low Gain

    OIP3, IIP3 vs. Temperature(f=885+885.1MHz, Pin=-20dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

    7

    8

    9

    10

    11

    12

    13

    14

    15

    16

    Temperature (oC)

    OIP3

    OIP3 (dBm)

    IIP3 (dBm)

    IIP3

    6

    8

    10

    12

    14

    16

    18

    20

    -60 -40 -20 0 20 40 60 80 100

    800MHz @Low Gain

    P-1dB(IN) vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    800MHz @Low Gain

    VSWRi, VSWRo vs. Temperature(f=885MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 37 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    0

    10

    20

    30

    40

    50

    -60 -40 -20 0 20 40 60 80 100

    800MHz @Low Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 38 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 39 -

    �ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode)

    0

    5

    10

    15

    20

    0 5 10 15 20

    800MHz @Low Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

  • NJG1133MD7

    - 40 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    -30

    -25

    -20

    -15

    -10

    -5

    0

    5

    10

    -40 -30 -20 -10 0 10

    1.7GHz @High Gain

    Pout vs. Pin(f=1860MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=-9.0dBm

    0

    5

    10

    15

    20

    -40 -30 -20 -10 0 10

    1.7GHz @High Gain

    Gain, IDD vs. Pin(f=1860MHz)

    0

    2

    4

    6

    8

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=-9.0dBm

    IDD (mA)

    IDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    1.7 1.75 1.8 1.85 1.9 1.95 2

    1.7GHz @High Gain

    NF, Gain vs. frequency(f=1.7GHz~2.0GHz)

    4

    6

    8

    10

    12

    14

    16

    18

    20

    Gain (dB)

    frequency (GHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10

    1.7GHz @High Gain

    Pout, IM3 vs. Pin(f1=1860MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=-0.5dBm

    IM3

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

  • NJG1133MD7

    - 41 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    1.83 1.84 1.85 1.86 1.87 1.88 1.89

    1.7GHz @High Gain

    P-1dB(IN) vs. frequency(f=1.84~1.88GHz)

    frequency (GHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    9

    10

    11

    12

    13

    14

    15

    16

    17

    1.8 1.82 1.84 1.86 1.88 1.9

    1.7GHz @High Gain

    OIP3, IIP3 vs. frequency(f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-30dBm)

    -4

    -3

    -2

    -1

    0

    1

    2

    3

    4

    frequency (GHz)

    OIP3

    OIP3 (dBm)

    IIP3 IIP3 (dBm)

  • NJG1133MD7

    - 42 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    Condition

    Ta=+25℃,

    f=1860MHz,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f1=1860MHz, f2=f1+100kHz,

    Pin=-30dBm,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=1860MHz,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=1860MHz,

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    10

    11

    12

    13

    14

    15

    16

    17

    18

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @High Gain

    Gain, NF vs. VDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @High Gain

    OIP3, IIP3 vs. VDD

    -3

    -2

    -1

    0

    1

    2

    3

    4

    5

    VDD (V)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    -10

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @High Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @High Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

  • NJG1133MD7

    - 43 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    Condition

    Ta=+25℃,

    RF=OFF

    VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @High Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (mA)

  • NJG1133MD7

    - 44 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @High Gain

    Gain, NF vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    7

    8

    9

    10

    11

    12

    13

    14

    15

    16

    17

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @High Gain

    OIP3H1, IIP3H1 vs. Temperature(f=1860+1860.1MHz, Pin=-30dBm, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    3

    4

    5

    Temperature (oC)

    OIP3H1

    OIP3H1 (dBm)

    IIP3H1 (dBm)

    IIP3H1

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @High Gain

    P-1dB(IN) vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @High Gain

    VSWRi, VSWRo vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 45 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    0

    1

    2

    3

    4

    5

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @High Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (mA)

  • NJG1133MD7

    - 46 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

  • NJG1133MD7

    - 47 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

    0

    5

    10

    15

    20

    0 5 10 15 20

    1.7GHz @High Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

  • NJG1133MD7

    - 48 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    -50

    -40

    -30

    -20

    -10

    0

    10

    20

    -40 -30 -20 -10 0 10 20

    1.7GHz @Low Gain

    Pout vs. Pin(f=1860MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=+16.5dBm

    -12

    -10

    -8

    -6

    -4

    -2

    0

    -40 -30 -20 -10 0 10 20

    1.7GHz @Low Gain

    Gain, IDD vs. Pin(f=1860MHz)

    25

    30

    35

    40

    45

    50

    55

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=+16.5dBm

    IDD (uA)

    IDD

    0

    2

    4

    6

    8

    10

    12

    14

    1.7 1.75 1.8 1.85 1.9 1.95 2

    1.7GHz @Low Gain

    NF, Gain vs. frequency(f=1.7~2.0GHz)

    -14

    -12

    -10

    -8

    -6

    -4

    -2

    0

    Gain (dB)

    frequency (GHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10 20

    1.7GHz @Low Gain

    Pout, IM3 vs. Pin(f1=1860MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=+15.3dBm

    IM3

  • NJG1133MD7

    - 49 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    6

    8

    10

    12

    14

    16

    18

    20

    22

    1.83 1.84 1.85 1.86 1.87 1.88 1.89

    1.7GHz @ Low Gain

    P-1dB(IN) vs. frequency(f=1.84~1.88GHz)

    frequency (GHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    8

    9

    10

    11

    12

    13

    14

    15

    16

    1.8 1.82 1.84 1.86 1.88 1.9

    1.7GHz @Low Gain

    OIP3, IIP3 vs. frequency(f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-16dBm)

    10

    11

    12

    13

    14

    15

    16

    17

    18

    frequency (GHz)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

  • NJG1133MD7

    - 50 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    f=1860MHz,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    f1=1860MHz, f2=f1+100kHz,

    Pin=-16dBm,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=1860MHz,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=1860MHz,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    -6

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @Low Gain

    Gain, NF vs. VDD

    -2

    -1

    0

    1

    2

    3

    4

    5

    6

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    8

    9

    10

    11

    12

    13

    14

    15

    16

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @Low Gain

    OIP3, IIP3 vs. VDD

    9

    10

    11

    12

    13

    14

    15

    16

    17

    VDD (V)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    12

    13

    14

    15

    16

    17

    18

    19

    20

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @Low Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @Low Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

  • NJG1133MD7

    - 51 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    RF=OFF,

    VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    25

    30

    35

    40

    45

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.7GHz @Low Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 52 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    -1

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @Low Gain

    Gain, NF vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

    2

    3

    4

    5

    6

    7

    8

    9

    10

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    4

    5

    6

    7

    8

    9

    10

    11

    12

    13

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @Low Gain

    OIP3, IIP3 vs. Temperature(f=1860+1860.1MHz, Pin=-16dBm, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

    10

    11

    12

    13

    14

    15

    16

    17

    18

    19

    Temperature (oC)

    OIP3

    OIP3 (dBm)

    IIP3 (dBm)

    IIP3

    6

    8

    10

    12

    14

    16

    18

    20

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @Low Gain

    P-1dB(IN) vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @Low Gain

    VSWRi, VSWRo vs. Temperature(f=1860MHz, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 53 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    0

    10

    20

    30

    40

    50

    -60 -40 -20 0 20 40 60 80 100

    1.7GHz @Low Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 54 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

  • NJG1133MD7

    - 55 -

    �ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode)

    Condition:Ta=+25℃, VDD= VINV =2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

    0

    5

    10

    15

    20

    0 5 10 15 20

    1.7GHz @Low Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

  • NJG1133MD7

    - 56 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    0

    5

    10

    15

    20

    -40 -30 -20 -10 0 10

    1.5GHz @High Gain

    Gain, IDD vs. Pin(f=1495MHz)

    0

    2

    4

    6

    8

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=-9.8dBm

    IDD (mA)

    IDD

    -30

    -25

    -20

    -15

    -10

    -5

    0

    5

    10

    -40 -30 -20 -10 0 10

    1.5GHz @High Gain

    Pout vs. Pin(f=1495MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=-9.8dBm

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    1.4 1.45 1.5 1.55 1.6 1.65 1.7

    1.5GHz @High Gain

    NF, Gain vs. frequency(f=1.4~1.7GHz)

    4

    6

    8

    10

    12

    14

    16

    18

    20

    Gain (dB)

    frequency (GHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10

    1.5GHz @High Gain

    Pout, IM3 vs. Pin(f1=1495MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=-0.3dBm

    IM3

  • NJG1133MD7

    - 57 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    1.46 1.47 1.48 1.49 1.5 1.51 1.52

    1.5GHz @High Gain

    P-1dB(IN) vs. frequency(f=1475~1511MHz)

    frequency (GHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    6

    8

    10

    12

    14

    16

    18

    20

    22

    1.45 1.475 1.5 1.525 1.55

    1.5GHz @High Gain

    OIP3, IIP3 vs. frequency(f1=1.45~1.55GHz, f2=f1+100kHz, Pin=-30dBm)

    -4

    -2

    0

    2

    4

    6

    8

    10

    12

    frequency (GHz)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

  • NJG1133MD7

    - 58 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    Condition

    Ta=+25℃,

    f=1495MHz,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f1=1495MHz, f2=f1+100kHz,

    Pin=-30dBm,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=1495MHz,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    Condition

    Ta=+25℃,

    f=1495MHz,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    10

    11

    12

    13

    14

    15

    16

    17

    18

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @High Gain

    Gain, NF vs. VDD

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @High Gain

    OIP3, IIP3 vs. VDD

    -3

    -2

    -1

    0

    1

    2

    3

    4

    5

    VDD (V)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    -10

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @High Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @High Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

  • NJG1133MD7

    - 59 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    Condition

    Ta=+25℃,

    RF=OFF

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @High Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (mA)

  • NJG1133MD7

    - 60 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    11

    12

    13

    14

    15

    16

    17

    18

    19

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @High Gain

    Gain, NF vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    7

    8

    9

    10

    11

    12

    13

    14

    15

    16

    17

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @High Gain

    OIP3H1, IIP3H1 vs. Temperature(f=1495+1495.1MHz, Pin=-30dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

    -6

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    3

    4

    Temperature (oC)

    OIP3H1

    OIP3H1 (dBm)

    IIP3H1 (dBm)

    IIP3H1

    -18

    -16

    -14

    -12

    -10

    -8

    -6

    -4

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @High Gain

    P-1dB(IN) vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @High Gain

    VSWRi, VSWRo vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 61 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 0

    1

    2

    3

    4

    5

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @High Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (mA)

  • NJG1133MD7

    - 62 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

  • NJG1133MD7

    - 63 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=1.8V

    0

    5

    10

    15

    20

    0 5 10 15 20

    1.5GHz @High Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

  • NJG1133MD7

    - 64 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    -50

    -40

    -30

    -20

    -10

    0

    10

    20

    -40 -30 -20 -10 0 10 20

    1.5GHz @Low Gain

    Pout vs. Pin(f=1495MHz)

    Pin (dBm)

    Pout

    Pout (dBm)

    P-1dB(IN)=+16.0dBm

    -12

    -10

    -8

    -6

    -4

    -2

    0

    -40 -30 -20 -10 0 10 20

    1.5GHz @Low Gain

    Gain, IDD vs. Pin(f=1495MHz)

    25

    30

    35

    40

    45

    50

    55

    Pin (dBm)

    Gain

    Gain (dB)

    P-1dB(IN)=+16.0dBm

    IDD (uA)

    IDD

    0

    2

    4

    6

    8

    10

    12

    14

    1.4 1.45 1.5 1.55 1.6 1.65 1.7

    1.5GHz @Low Gain

    NF, Gain vs. frequency(f=1.4~1.7GHz)

    -14

    -12

    -10

    -8

    -6

    -4

    -2

    0

    Gain (dB)

    frequency (GHz)

    Gain

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    -100

    -80

    -60

    -40

    -20

    0

    20

    -40 -30 -20 -10 0 10 20

    1.5GHz @Low Gain

    Pout, IM3 vs. Pin(f1=1495MHz, f2=f1+100kHz)

    Pin (dBm)

    Pout

    Pout, IM3 (dBm)

    IIP3=+14.4dBm

    IM3

  • NJG1133MD7

    - 65 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    VDD= 2.7V,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    6

    8

    10

    12

    14

    16

    18

    20

    22

    1.46 1.47 1.48 1.49 1.5 1.51 1.52

    1.5GHz @Low Gain

    P-1dB(IN) vs. frequency(f=1475~1511MHz)

    frequency (GHz)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    2

    4

    6

    8

    10

    12

    14

    16

    1.45 1.475 1.5 1.525 1.55

    1.5GHz @Low Gain

    OIP3, IIP3 vs. frequency(f1=1.45~1.55GHz, f2=f1+100kHz, Pin=-16dBm)

    12

    14

    16

    18

    20

    22

    24

    26

    frequency (GHz)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

  • NJG1133MD7

    - 66 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    f=1495MHz,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    f1=1495MHz, f2=f1+100kHz,

    Pin=-16dBm,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=1495MHz,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    Condition

    Ta=+25℃,

    f=1495MHz,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    -6

    -5

    -4

    -3

    -2

    -1

    0

    1

    2

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @Low Gain

    Gain, NF vs. VDD

    -2

    -1

    0

    1

    2

    3

    4

    5

    6

    VDD (V)

    Gain

    Gain (dB)

    NF

    NF (dB)

    8

    9

    10

    11

    12

    13

    14

    15

    16

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @Low Gain

    OIP3, IIP3 vs. VDD

    9

    10

    11

    12

    13

    14

    15

    16

    17

    VDD (V)

    OIP3

    OIP3 (dBm)

    IIP3

    IIP3 (dBm)

    12

    13

    14

    15

    16

    17

    18

    19

    20

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @Low Gain

    P-1dB(IN) vs. VDD

    VDD (V)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @Low Gain

    VSWR vs. VDD

    VSWRiVSWRo

    VDD (V)

    VSWR

  • NJG1133MD7

    - 67 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    Condition

    Ta=+25℃,

    RF=OFF,

    VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

    25

    30

    35

    40

    45

    2.2 2.4 2.6 2.8 3 3.2 3.4 3.6

    1.5GHz @Low Gain

    IDD vs. VDD

    VDD (V)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 68 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    -9

    -8

    -7

    -6

    -5

    -4

    -3

    -2

    -1

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @Low Gain

    Gain, NF vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

    2

    3

    4

    5

    6

    7

    8

    9

    10

    Temperature (oC)

    Gain

    Gain (dB)

    NF

    NF (dB)

    (Exclude PCB, Connector Losses)

    4

    5

    6

    7

    8

    9

    10

    11

    12

    13

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @Low Gain

    OIP3, IIP3 vs. Temperature(f=1495+1495.1MHz, Pin=-16dBm, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

    10

    11

    12

    13

    14

    15

    16

    17

    18

    19

    Temperature (oC)

    OIP3

    OIP3 (dBm)

    IIP3 (dBm)

    IIP3

    6

    8

    10

    12

    14

    16

    18

    20

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @Low Gain

    P-1dB(IN) vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

    Temperature (oC)

    P-1dB(IN)

    P-1dB(IN) (dBm)

    0

    0.5

    1

    1.5

    2

    2.5

    3

    3.5

    4

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @Low Gain

    VSWRi, VSWRo vs. Temperature(f=1495MHz, VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V)

    VSWRiVSWRo

    Temperature (oC)

    VSWR

  • NJG1133MD7

    - 69 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 0

    10

    20

    30

    40

    50

    -60 -40 -20 0 20 40 60 80 100

    1.5GHz @Low Gain

    IDD vs. Temperature(VDD=2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V, RF=OFF)

    Temperature (oC)

    IDD

    IDD (uA)

  • NJG1133MD7

    - 70 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    Condition:Ta=+25℃, VDD= 2.7V, VCTL1=1.8V, VCTL2=1.8V, VCTL3=0V

  • NJG1133MD7

    - 71 -

    �ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode)

    Condition:Ta=+25℃, VDD= VINV =2.7V, VCTL1=1.8V, VCTL2=1.85V, VCTL3=0V

    0

    5

    10

    15

    20

    0 5 10 15 20

    1.5GHz @Low Gain

    k factor vs. frequency(f=50MHz~20GHz)

    frequency (GHz)

    k factor

  • NJG1133MD7

    - 72 -

    � APPLICATION CIRCUIT 1(2.1GHz/800MHz/1.7GHz Band)

    PARTS LIST

    PRECAUTIONS

    1) Please locate bypass capacitor C3 proximity to inductor L3 and L6.

    2) Please locate bypass capacitor C5 proximity to inductor L9.

    3) Ground terminal should be connected with the ground plane as short as possible.

    Parts ID Notes

    L1, L2, L4 ~L9 MURATA(LQP03T)0603 Size

    L3 TDK(MLK0603)0603 Size

    C1~C5 MURATA(GRM03)0603 Size

    13

    RFIN2

    RFIN1 RFOUT2

    GND

    VCTL2

    VCTL3

    VCTL1

    Logic

    Circuit

    RFOUT3

    RFIN3

    RFOUT1

    1.7GHz Band

    (1.5GHz Band)Bias

    Circuit

    Bias

    Circuit

    Bias

    Circuit

    GND

    2.1GHz Band

    800MHz Band

    6

    5

    7

    14

    12

    13

    GND2 41 3

    10 811 9GNDGND

    (Top View)

    RF OUT3 (1.7GHz)

    RF OUT1 (800MHz)

    RF OUT2 (2.1GHz)

    VDD

    VCTL1 (Band Sel1)

    VCTL2 (Band Sel2)

    VCTL3 (RX ATT)

    RF IN3 (1.7GHz)

    RF IN2 (2.1GHz)

    RF IN1 (800MHz)

    L1

    12nH

    L2

    8.2nH

    L3

    10nH

    L4

    2.4nH

    L5

    1.6nH

    L6

    2.4nH

    L7

    3.3nH

    L8

    1.1nH

    L9

    3.0nH

    C1

    2pF

    C4

    2pF

    C2

    2pF

    C3

    0.01uF

    C5

    0.01uF

  • NJG1133MD7

    - 73 -

    � APPLICATION CIRCUIT 2(2.1GHz/800MHz/1.5GHz Band)

    PARTS LIST

    PRECAUTIONS

    1) Please locate bypass capacitor C3 proximity to inductor L3 and L6.

    2) Please locate bypass capacitor C5 proximity to inductor L9.

    3) Ground terminal should be connected with the ground plane as short as possible.

    Parts ID Notes

    L1, L2, L4 ~L9 MURATA(LQP03T)0603 Size

    L3 TDK(MLK0603)0603 Size

    C1~C5 MURATA(GRM03)0603 Size

    13

    RFIN2

    RFIN1 RFOUT2

    GND

    VCTL2

    VCTL3

    VCTL1

    Logic

    Circuit

    RFOUT3

    RFIN3

    RFOUT1

    1.7GHz Band

    (1.5GHz Band)Bias

    Circuit

    Bias

    Circuit

    Bias

    Circuit

    GND

    2.1GHz Band

    800MHz Band

    6

    5

    7

    14

    12

    13

    GND2 41 3

    10 811 9GNDGND

    (Top View)

    RF OUT3 (1.5GHz)

    RF OUT1 (800MHz)

    RF OUT2 (2.1GHz)

    VDD

    VCTL1 (Band Sel1)

    VCTL2 (Band Sel2)

    VCTL3 (RX ATT)

    RF IN3 (1.5GHz)

    RF IN2 (2.1GHz)

    RF IN1 (800MHz)

    L1

    12nH

    L2

    8.2nH

    L3

    10nH

    L4

    2.4nH

    L5

    1.6nH

    L6

    2.4nH

    L7

    3.9nH

    L8

    3.6nH

    L9

    5.1nH

    C1

    2pF

    C4

    1.5pF

    C2

    2pF

    C3

    0.01uF

    C5

    0.01uF

  • NJG1133MD7

    - 74 -

    ���� TEST PCB LAYOUT

    PCB (FR-4):

    t=0.2mm

    MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)

    PCB SIZE=35.4mm x 17.0mm

    (Top View)

    RF IN2 (2.1GHz)

    VDD

    VCTL1

    RF IN1 (800MHz)

    RF OUT1 (800MHz)

    RF OUT3 (1.7/1.5GHz)

    VCTL2

    RF IN3 (1.7G/1.5GHz)

    VCTL3

    RF OUT2 (2.1GHz)

    VDD

    L1

    L2

    L3 L5

    L4

    L6 L8

    L7

    L9

    C1

    C2

    C3

    C5 C4

  • NJG1133MD7

    - 75 -

    ���� PACKAGE OUTLINE (EQFN14-D7)

    Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material.

    • Do NOT eat or put into mouth.

    • Do NOT dispose in fire or break up this product.

    • Do NOT chemically make gas or powder with this product.

    • To waste this product, please obey the relating law of your country.

    This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.

    [CAUTION] The specifications on this databook are

    only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages

    Details of"A" part(×2)

    B

    φ0.05 SM AB

    C0.1

    "A"

    0.05 S

    3-R0.2

    A

    S

    0.075 S

    R0.06 2-R0.08

    2-R0.06

    C0.1

    R0.03

    1.6±0.051.6±

    0.0

    5

    0.3

    97±

    0.0

    3

    0.0

    10

    min0

    .15

    0.74

    +0.07

    -0.03

    0.21±

    0.1

    0

    0.21±0.1

    0.18 -0.04+0.06

    0.2

    0.4

    0.11

    0.075

    0.0

    5

    0.176

    +0.010

    -0.008

    UNIT:mm

    SUBSTRATE MATERIAL:Copper

    TERMINAL FINISH:Sn-Bi plating

    MOLD MATERIAL:Epoxy resin

    MASS(TYP.):0.0034(g)