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AWR ® MMIC Flow White Paper TURN UP THE HEAT! AWR CONNECTED : AN ELECTRICAL-THERMAL MMIC DESIGN FLOW Electronic circuit design typically begins with an assumption that the components are operating at ambient temperature. Monolithic Microwave Integrated Circuit (MMIC) design, in particular, violates this as the DC current flowing through the ever-shrinking devices induces heating to two, three, or even four times greater temperature (in ºC). Such a large departure from assumed room temperature behavior impacts phase, gain, efficiency, noise, and intermodulation distortion. Circuit designers need tools with integrated electrical-thermal analysis to address these performance issues. With the continual increase in power densities for radar and mobile communication applications, device reliability is also a design concern. Product life cycle for base station and fixed wireless applications is much longer than terminals, so field failures are costly. Highly reliable devices able to maintain performance over prescribed useful lifetimes are required. Furthermore, outdoor installation of base stations mounted in equatorial regions may require components to sustain operation at 85 °C case temperatures. To ensure continuous operation, component reliability mean-time to failure (MTTF) values in excess of 10 6 hours are typically called for. Failure of Field Effect Transistors (FETs) is directly related to the junction temperature — the thermal source created within the FET channel by the flow of DC current. To maximize MTTF, the peak junction temperature relative to ambient is minimized. Individual device temperatures are influenced by the placement relative to other devices on the die. Hence designers need the ability to quickly evaluate the peak junction temperatures for a particular layout. Once a device is built, temperatures can be measured with a variety of techniques [REF 1]. This is not very helpful for the design phase, however, and there is a limitation in geometric resolution which makes this extremely challenging at sub-micron FET channel lengths. Junction temperatures can be determined numerically using thermal analysis software provided sufficient details are included and the material properties are known [REF 2-4]. SYMMIC from CapeSym is a design-stage thermal analysis tool developed explicitly for the MMIC designer, and integrates with AWR’s Microwave Office high-frequency design software. The integration is script-based and requires minimum manual intervention as compared to non-integrated thermal solvers. A circuit layout in Microwave Office can be easily exported to a thermal model in SYMMIC to assess temperatures throughout the MMIC. Packaging of MMICs into radar and communication systems can be further analyzed to determine the impact of subsystem design on peak junction temperatures within individual FETs. An Electrical-Thermal MMIC Design Flow Watch the Export Microwave Office Layout to SYMMIC video on AWR.TV.

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Page 1: MMIC Flow White Paper

AWR® MMIC FlowWhite Paper

TURN UP THE HEAT! AWR CONNECTED™:

AN ELECTRICAL-THERMAL MMIC DESIGN FLOW

Electronic circuit design typically begins with an assumption that the components

are operating at ambient temperature. Monolithic Microwave Integrated Circuit

(MMIC) design, in particular, violates this as the DC current fl owing through the

ever-shrinking devices induces heating to two, three, or even four times greater

temperature (in ºC). Such a large departure from assumed room temperature

behavior impacts phase, gain, effi ciency, noise, and intermodulation distortion.

Circuit designers need tools with integrated electrical-thermal analysis to address

these performance issues.

With the continual increase in power densities for radar and mobile

communication applications, device reliability is also a design concern. Product

life cycle for base station and fi xed wireless applications is much longer than

terminals, so fi eld failures are costly. Highly reliable devices able to maintain

performance over prescribed useful lifetimes are required. Furthermore,

outdoor installation of base stations mounted in equatorial regions may require

components to sustain operation at 85 °C case temperatures. To ensure

continuous operation, component reliability mean-time to failure (MTTF) values in

excess of 106 hours are typically called for.

Failure of Field Effect Transistors (FETs) is directly related to the junction

temperature — the thermal source created within the FET channel by the

fl ow of DC current. To maximize MTTF, the peak junction temperature relative

to ambient is minimized. Individual device temperatures are infl uenced by the

placement relative to other devices on the die. Hence designers need the ability

to quickly evaluate the peak junction temperatures for a particular layout. Once

a device is built, temperatures can be measured with a variety of techniques

[REF 1]. This is not very helpful for the design phase, however, and there is a

limitation in geometric resolution which makes this extremely challenging at

sub-micron FET channel lengths.

Junction temperatures can be determined numerically using thermal analysis

software provided suffi cient details are included and the material properties

are known [REF 2-4]. SYMMIC™ from CapeSym is a design-stage thermal

analysis tool developed explicitly for the MMIC designer, and integrates with

AWR’s Microwave Offi ce™ high-frequency design software. The integration

is script-based and requires minimum manual intervention as compared to

non-integrated thermal solvers. A circuit layout in Microwave Offi ce can be easily

exported to a thermal model in SYMMIC to assess temperatures throughout

the MMIC. Packaging of MMICs into radar and communication systems can be

further analyzed to determine the impact of subsystem design on peak junction

temperatures within individual FETs.

An Electrical-Thermal MMIC Design Flow

Watch the Export Microwave Offi ce Layout to SYMMIC video on AWR.TV.

Page 2: MMIC Flow White Paper

WHAT MAKES SYMMIC DIFFERENT?

Most thermal analysis tools are optimized and designed for general purpose

use. This generalization makes them diffi cult to apply to specialized problems,

such as the analysis of MMIC thermal behavior. Defi ning the detailed MMIC

structure’s layout and semiconductor/dielectric/conductor layer stack-up as

well as the RF/DC operating conditions are among the challenges for the user

working with a generic thermal software package. SYMMIC takes a totally

different approach to signifi cantly reduce these complexities and barriers for a

MMIC designer.

SYMMIC’s template-based approach allows the user to defi ne the process

technology and thermal stack-up separately from the circuit layout. These

templates can then be reused for different designs. Once a template is defi ned

for a GaAs FET, for example, the designer can easily switch from RF GaAs MMIC

design to thermal analysis, simply by running a script within the Microwave

Offi ce design environment. Template-based thermal design relieves the electrical

engineer from nearly all the burden of creating robust thermal simulations. The

normally diffi cult set-up of the thermal analysis is generally contained within the

template, so once this is defi ned for a design, the engineer freely manipulates

the rest of the design to explore its thermal properties. Understanding thermal

boundary conditions and the impact of material properties can be investigated and

understood as part of the design process and not as a precursor to it. SYMMIC

is the fi rst tool that brings thermal analysis to the realm of MMIC design.

SYMMIC also provides fast analysis. For Microwave Offi ce designers using

a multi-core desktop workstation and 64-bit AXIEM®, SYMMIC can take full

advantage of the hardware confi guration. The example simulations described

below were run on an 8-core 16GB Windows PC running 64-bit XP. This is highly

conducive to an iterative design fl ow where FET bias points can be chosen with

regard to thermal conditions as well as electromagnetic behavior--supporting the

concurrent design of a MMIC for reliability and electrical performance.

THERMAL ANALYSIS OF

AN RF TRANSCEIVER

To demonstrate the Microwave Offi ce and

SYMMIC software integration, a MMIC high

power amplifi er (PA) -- standard example

within Microwave Offi ce software -- serves

as the starting point. This design is a 1W

X-band PA MMIC utilizing the AWR MESFET

process design kit. A low-noise amplifi er (LNA)

was added to the circuit by copying two of

the FETs in the design and re-biasing them so their drain current is about 10%

that of FETs in the PA (Figure 1). The LNA-PA single die solution is what would be

expected for an integrated transceiver MMIC. The thermal coupling from PA to

LNA must be managed to achieve minimal noise fi gure.

AWR MMIC FlowWhite Paper

FACT:

SYMMIC can be used beyond the MMIC for mod-ules and subsys-tems, as well as for transient and steady-state analysis with fl exible boundary conditions that include radiated effects.

Figure 1. HPA and LNA MMIC design in AWR software.

Page 3: MMIC Flow White Paper

The fi rst step in carrying out a thermal analysis is to confi gure a device

template in SYMMIC to represent the 3D structure and the stack-up.

Starting with the generic FET template that comes with SYMMIC,

parameters were adjusted to produce a FET resembling the AWR MESFET

library device. The next step is to run the script to determine the extent of

the die and the locations of all the FETs on it from the layout in Microwave

Offi ce. This information is formatted and exported to a fi le for input into

SYMMIC. This fi le along with the FET device template defi nes the entire

fi nite element problem for the thermal simulation. A second fi le is exported

containing the dissipated power levels of the FETs derived from the electrical

simulation(s). This fi le serves as a parameter input fi le defi ning all the

simulation cases for thermal analysis.

Because SYMMIC is a standalone application that runs separately from the

AWR software, it can be used anytime after the fi les have been exported

from Microwave Offi ce. Opening the exported layout in SYMMIC displays the

3D model of the LNA-PA that will be used for thermal analysis (Figure 2).

Since the model is based on a parameterized template, the parameters for

FET dimensions, layer thicknesses, material properties, and heating profi les

can be modifi ed within SYMMIC to test various design considerations.

Two different simulations were run for the LNA-PA MMIC. In the

fi rst simulation (Figure 3), the PA is off and the LNA is running at its

nominal value of 50 mW. The channel temperature for the LNA FETs is

approximately 8 ºC above baseplate. In the second simulation, the PA

and the LNA are both operational. The PA is running at approximately

450 mW dissipated power per FET in the output stage and in the driver

stage. Clearly this is an exceptionally “hot” test condition.

In this confi guration (Figure 4), the output stage FETs

vary over about 20 ºC, with the hottest FET running

almost 90 ºC above baseplate. The LNA FETs though

are now about 13 ºC above the baseplate — perhaps a

bit warmer than when they are the only thermal source,

but not as hot as expected with the HPA in an extreme

condition.

In this simulation, the PA is assumed to be operating

continuously with an enable/disable capability. The

result is a 5 ºC increase in channel temperature of the

LNA. Other applications may require transient mode

operation of the PA in addition to the enable/disable

capability. SYMMIC is able to work as a transient

thermal solver as well so that the reduced thermal

fl uctuations from a pulsed or other modulation scheme

can be accommodated [REF 5].

Figure 2. SYMMIC with LNA-PA model and dialog for updating/verifying the dissipated power for each FET.

AWR MMIC FlowWhite Paper

Figure 3. SYMMIC simulation for LNA-PA MMIC with the PA turned off and the LNA operating at nominal power.

Figure 4. HPA and LNA MMIC running simultaneously.

Page 4: MMIC Flow White Paper

ELECTRICAL-THERMAL CO-SIMULATION

SYMMIC can also be used “in the loop” to evaluate the effect of temperature

on performance metrics other than reliability and noise. This type of analysis

requires a transistor model with temperature sensitive parameters so that

the thermal analysis can feed back into the electrical simulation. Scripts in

Microwave Offi ce allow the temperatures computed by SYMMIC to update the

temperature parameter of such a model. This change typically alters the electrical

performance of the circuit and dissipated power levels in the transistors.

Different dissipated powers would produce different temperatures. Consequently,

a script is available for iterative analysis in which each electrical simulation

in Microwave Offi ce alternates with SYMMIC thermal analysis to produce an

accurate assessment of both temperatures and electrical performance metrics in

continuous operation.

THERMAL IMPEDANCE NETWORKS

Additionally, thermal transients may introduce undesirable memory effects

that can be diffi cult to evaluate. For this type of transient analysis, the

electrical and thermal simulations should run simultaneously [REF 6 and 7].

This is implemented in the Microwave Offi ce/SYMMIC integration through the

generation of a thermal impedance network.

The junction temperature rise due to dissipated power is often expressed

as thermal resistance in °C/W. Transistor models may include a thermal

resistance parameter that allows the electrical simulation to account for the

self-heating effects. For a single device, this value can be determined from

the thermal analysis by simply dividing the peak temperature by the dissipated

power. For a transient analysis however, the transistor model would need

both thermal resistance and thermal capacitance, and the latter can be much

harder to estimate given that there is more than one thermal time constant

in the MMIC. The situation is much more complex for a MMIC with an array

of transistors, since it is necessary to consider not only self-heating but also

thermal coupling between nearby devices.

Consequently, SYMMIC provides a unique solution

by automatically computing the thermal impedance

network representing a compact thermal model of

an entire MMIC under specifi c operating conditions.

SYMMIC exports the thermal impedances back to

the Microwave Offi ce environment as a netlist circuit

description. This thermal network can be attached to

the thermal ports of transistors to obtain a transient

electro-thermal analysis using AWR’s APLAC®

transient simulator.

AWR MMIC FlowWhite Paper

Page 5: MMIC Flow White Paper

CONCLUSION

The advantages of an integrated electrical-thermal co-design fl ow are two-fold:

• Faster design turn-around since the MMIC designer is not dependent upon

someone else to run simulations.

• Quicker ‘what-if’ electrical-thermal simulations to determine the optimum

design such as the most compact active designs possible for a particular

application (bias/power level/effi ciency).

Through the script-based integration of SYMMIC’s thermal analysis software with

the AWR Design Environment, practical thermal simulation is now a reality for the

MMIC designer as an integrated part of an RF/microwave design fl ow rather than

a disjointed piece of mechanical engineering software. SYMMIC’s template-based

approach and sheer simulation speed combined with its scripted integration to

Microwave Offi ce means that more accurate device simulation is possible for electrical

circuit design. Reliability can be concurrently considered with electrical performance in

simulations that take no longer than a detailed electromagnetic simulation.

So turn up the heat. With AWR Connected for SYMMIC, MMIC designers

will be ready!

REFERENCES

1. D. L. Blackburn, “Temperature measurements of semiconductor devices - a

review,” 20th Annual IEEE Semi-Therm Symp., Mar 9-11, 2004, pp. 70-80

2. J. Wright, B.W. Marks, K. D. Decker, “Modeling of MMIC devices for determining

MMIC channel temperatures during life tests,” in 7th IEEE Semiconductor Thermal

Measurement, Modeling, and Management Symp., 1991, pp. 131–139.

3. D. S. Green, B. Vembu, D. Hepper, S. R. Gibb, D. Jin, R. Vetury, J. B. Shealy, L. T.

Beechem, S. Graham, “GaN HEMT thermal behavior and implications for reliability

testing and analysis,” Phys. Stat. Sol. C 5(6):2026-2029, 2008.

4. A. P. Fattorini, J. Tarazi, S. J. Mahon, “Channel Temperature Estimation in

GaAs FET Devices,” IEEE MTT-S Intl. Microwave Symp., May 23-28, 2010, pp.

320-323.

5. J. C. Fiala, M. R. Overholt, S. Motakef, D. Carlson, “Thermal considerations in low

cost T/R module design,” 35th GOMACTech Conf., Mar 22-25, 2010, Reno, NV.

6. S. R. Nedeljkovic, J. R. McMacken, P. J. Partyka, J. M. Gering, “A Custom III-V

Heterojunction Bipolar Transistor Model,” Microwave Journal. Vol. 52, No. 4, April

2009, p. 60.

7. D. Denis, C. M. Snowden, I. C. Hunter, “Coupled Electrothermal, Electromagnetic,

and Physical Modeling of Microwave Power FETs,” IEEE Trans. Microwave Theory

Techniques, Vol. 54, No. 6, June 2006, pp. 2465-2470.

AWR MMIC FlowWhite Paper

AWR, 1960 East Grand Avenue, Suite 430, El Segundo, CA 90245, USATel: +1 (310) 726-3000 Fax: +1 (310) 726-3005 www.awrcorp.com

Copyright © 2012 AWR Corporation. All rights reserved. AWR is a National Instruments Company. AWR and the AWR logo, APLAC and AXIEM are registered trademarks and Microwave Offi ce and AWR Connected are trademarks of AWR Corporation. All others are trademarks of their respective holders.

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