AMPL

IFIE

RS

|| G

aAs

MM

IC P

HEM

T

408.526.1100 ◊ 408.526.1105

sales@eclipsemdi.com ◊ www.eclipsemdi.com

2095-60 Ringwood Ave ◊ San Jose, CA 95131

1 - 5

Eclipse Microdevices EMD-1725 is a 40 GHz GaAs MMIC PHEMPT Distributed general purpose Low Noise Amplifier. This LNA has a Small signal gain of 15 dB and is ideal for applications that requires a typical P1dB output power of +15 dBm at 36 GHz, while requiring only 110mA from a + 8Volt supply. The EMD-1725 has a slightly positive gain slope above 15 GHz which is ideal for most commercial and industrial applications. The device comes in a small die size of 2.3mm X 1.55mm X 0.1mm thick. The device requires an off chip choke & blocking caps for broadband operation.

ELECTRICAL SPECIFICATION @ +25 °C, Vdd=8V,Vgg=-.43V, Ids=108mA

Parameters SPECIFICATION

FREQ. (GHz)

MIN

TYPICAL

MAX

Units

Gain

2.0 15.0 25.0 36.0

11.8 12.2 13.0 14.5

12.0 12.5 13.5 15.5

dB dB dB dB

Gain Flatness dc to 20.0 20.0 to 40.0 ±0.20

±1.00 ±0.40 ±1.50

dB dB

Gain Variation Over Temperature

0.02 dB/°C

Noise Figure

2.0 15.0 25.0 36.0

4.8 3.5 4.7 6.8

dB dB dB dB

Input Return Loss(S11) 11 dB

Output Return Loss(S22) 10 dB

1 dB Compression Point(P1dB)

2.0 15.0 25.0 36.0

19.0 19.0 20.5 15.5

dBm dBm dBm dBm

Saturated Output Power(Psat)

2.0 15.0 25.0 36.0

20.0 21.0 23.0 17.5

dBm dBm dBm dBm

Third-Order Output Intercept Point +28 +33

dBm

1725 - DC-36GHz Distributed Amplifier - Unit A

-20

-15

-10

-5

0

5

10

15

20

0 5 10 15 20 25 30 35 40 45 50

Frequency/GHz

Res

pons

e/dB

S11/dBS21/dBS22/dB

Vdd=8V; Vgg = -0.43V; Ids=108mA

1725 - Noise Figure Data

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42

Frequency/GHz

NFm

in/d

B

NF Meter Gain/dB 8V 112mA

Measured Noise Figure/dB 8V 112mA

NF Meter Gain/dB 5V 61mA

Measured Noise Figure/dB 5V 61mA

1725 - DC-36GHz Distributed Amplifier - Unit A

10

12

14

16

18

20

22

24

26

28

30

0 5 10 15 20 25 30 35 40

Frequency/GHz

Res

pons

e/dB

P1dB/dBmPsat/dBm

Vdd=8V; Vgg = -0.45V; Ids=109mA

AMPL

IFIE

RS

|| G

aAs

MM

IC P

HEM

T

408.526.1100 ◊ 408.526.1105

sales@eclipsemdi.com ◊ www.eclipsemdi.com

0.00

0 [0

.00]

0.000 [0.00]

0.09

1 [2.

30]

0.04

0 [1

.01]

0.05

1 [1.3

1]

0.08

7 [2

.20]

0.031 [0.78]

0.018 [0.45]

0.00

4 [0

.10]

0.01

6 [0

.40]

0.061 [1.55]

GaAs PHEMT MMICLow Noise Distributed AmplifierDC to 40 GHz

5 - 5

3

6

1 4

5

2

RF-IN

Vgg1

RF-OUT

Vgg2

C4

C1 C2

C5

REFERENCE DESCRIPTIONVdd 8V@ 108mAVgg1 -0.43VVgg2 OPTIONALC2,C5 100 pFC2,C4,C5,C7,C9 1000 pFC1,C8 0.1uFL 1 0.22uH

C6C8 C7

Vdd

EXTERNALBIAS CIRCUITOR TEE

Application Circuit

L1

C9

C3

NOTE: Adjust Vgg1 to between -2 to 0 volts to achieve Ids=110 mA typical.