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AMPLIFIERS - LINEAR & POWER - SMT 1 H HMC994APM5E v04.0218 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Functional Diagram Features P1dB Output Power: +28 dBm Psat Output Power: +29 dBm High Gain: 15 dB Output IP3: +38 dBm Supply Voltage: Vdd = +10V @ 250 mA 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25 mm² Typical Applications The HMC994APM5E is ideal for: • Test Instrumentation • Military & Space • Fiber optics General Description The HMC994APM5E is a GaAs pHEMT MMIC Distributed Wideband Power Amplifier which operates between DC and 28 GHz. The amplifier provides 15 dB of gain, +29 dBm of saturated output power, and 25% PAE from a +10V supply. With up to +38 dBm Output IP3 the HMC994APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HMC994APM5E exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, and test equipment applications. The HMC994APM5E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5x5 mm surface mount package. Electrical Specifications, T A = +25° C, Vdd = +10V, Vgg2=3.5V Idd = 250 mA [1] Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ.. Max. Units Frequency Range DC - 10 10 - 20 20 - 28 GHz Gain 12 14 12 15 13 16 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.008 0.011 1.016 dB/ °C Input Return Loss 12 12 12 dB Output Return Loss 25 22 20 dB Output Power for 1 dB Compression (P1dB) 26 28 26 28 25 27 dBm Saturated Output Power (Psat) 30 29.5 28 dBm Output Third Order Intercept (IP3) Pout/tone = +16dBm 40 38 36 dBm Noise Figure 4 3.5 4 dB Supply Current (Idd) 250 250 250 mA Supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V [1] Adjust Vgg1 to achieve Idd = 250 mA typical; Vgg1 = -0.50V typical.

HMC994APM5E - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - sm T 1 H HMC994APM5E v04.0218 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz for price, delivery, and

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    H HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

    Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

    Functional Diagram

    Features

    p1dB output power: +28 dBm

    psat output power: +29 dBm

    High Gain: 15 dB

    output ip3: +38 dBm

    supply Voltage: Vdd = +10V @ 250 mA

    50 ohm matched input/output

    32 lead 5x5 mm smT package: 25 mm²

    Typical Applications

    The HmC994Apm5e is ideal for:

    • Test instrumentation

    • military & space

    • fiber optics

    General Description

    The HmC994Apm5e is a GaAs pHemT mmiC Distributed wideband power Amplifier which operates between DC and 28 GHz. The amplifier provides 15 dB of gain, +29 dBm of saturated output power, and 25% pAe from a +10V supply. with up to +38 dBm output ip3 the HmC994Apm5e is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HmC994Apm5e exhibits a positive gain slope from 2 to 20 GHz making it ideal for ew, eCm, and test equipment applications. The HmC994Apm5e amplifier i/os are internally matched to 50 ohms and is packaged in a leadless Qfn 5x5 mm surface mount package.

    Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2=3.5V Idd = 250 mA [1]

    parameter min. Typ. max. min. Typ. max. min. Typ.. max. Units

    frequency range DC - 10 10 - 20 20 - 28 GHz

    Gain 12 14 12 15 13 16 dB

    Gain flatness ±0.5 ±0.5 ±0.5 dB

    Gain Variation over Temperature 0.008 0.011 1.016 dB/ °C

    input return loss 12 12 12 dB

    output return loss 25 22 20 dB

    output power for 1 dB Compression (p1dB) 26 28 26 28 25 27 dBm

    saturated output power (psat) 30 29.5 28 dBm

    output Third order intercept (ip3)pout/tone = +16dBm

    40 38 36 dBm

    noise figure 4 3.5 4 dB

    supply Current (idd) 250 250 250 mA

    supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V

    [1] Adjust Vgg1 to achieve idd = 250 mA typical; Vgg1 = -0.50V typical.

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Gain vs. Vdd

    Gain & Return Loss Low Frequency Gain & Return Loss

    Input Return Loss vs. Temperature

    Gain vs. Temperature

    -25

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    0

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    S21 S11 S22

    RE

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    FREQUENCY (GHz)

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    0.0001 0.001 0.01 0.1 1

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    FREQUENCY (GHz)

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    +25 C +85 C -40 C

    GA

    IN (

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    FREQUENCY (GHz)

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    +8V+9V

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    GA

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    FREQUENCY (GHz)

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    RE

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    Gain vs. Idd

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    8

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    12

    14

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    0 5 10 15 20 25 30

    175mA200mA

    225mA250mA

    GA

    IN (

    dB

    )

    FREQUENCY (GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Output Return Loss vs. Idd

    Input Return Loss vs. Idd

    Output Return Loss vs. Temperature

    Reverse Isolation vs. Temperature

    Output Return Loss vs. Vdd

    -25

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    225mA250mA

    RE

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    FREQUENCY (GHz)

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    RE

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    FREQUENCY (GHz)

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    RE

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    FREQUENCY (GHz)

    -25

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    175mA200mA

    225mA250mA

    RE

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    RN

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    (dB

    )

    FREQUENCY (GHz)

    -80

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    +25 C +85 C -40 C

    ISO

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    FREQUENCY (GHz)

    Input Return Loss vs. Vdd

    -25

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    +8V+9V

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    RE

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    LO

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    (dB

    )

    FREQUENCY (GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Low Frequency P1dB vs. Temperature

    P1dB vs. Idd

    Noise Figure vs. Idd

    P1dB vs. Temperature

    Noise Figure vs. Temperature

    P1dB vs. Vdd

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    2

    4

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    +25C +85C -40C

    NO

    ISE

    FIG

    UR

    E (

    dB

    )

    FREQUENCY (GHz)

    0

    2

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    225mA250mA

    NO

    ISE

    FIG

    UR

    E (

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    FREQUENCY (GHz)

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    22

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    0 0.3 0.5 0.8 1 1.3 1.5

    +25 C +85 C -40 C

    P1dB

    (dB

    m)

    FREQUENCY (GHz)

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    +25 C +85 C -40 C

    P1dB

    (dB

    m)

    FREQUENCY (GHz)

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    +8V+9V

    +10V+11V

    P1dB

    (dB

    m)

    FREQUENCY (GHz)

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    30

    32

    0 5 10 15 20 25 30

    175 mA200 mA

    225 mA250 mA

    P1dB

    (dB

    m)

    FREQUENCY (GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Psat vs. Temperature

    Psat vs. Vdd

    Low Frequency Psat vs. Temperature

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    30

    32

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    +25 C +85 C -40 C

    Psat (d

    Bm

    )

    FREQUENCY (GHz)

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    22

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    26

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    +25 C +85 C -40 C

    Psat (d

    Bm

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    FREQUENCY (GHz)

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    +8V+9V

    +10V+11V

    Psat (d

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    FREQUENCY (GHz)

    Psat vs. Idd

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    225 mA250 mA

    Psat (d

    Bm

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    FREQUENCY (GHz)

    Gain & Power vs. Idd @ 16GHz

    0

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    16

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    32

    240

    250

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    0 3 6 9 12 15 18

    Idd

    Pout Gain PAE

    Pout(

    dB

    m),

    GA

    IN(d

    B),

    PA

    E(%

    )

    Idd (m

    A)

    INPUT POWER (dBm)

    Power Compression @ 16 GHz

    5

    10

    15

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    175 200 225 250

    GAIN (dB)P1dB (dBm)

    Psat (dBm)

    Idd (mA)

    Gain

    (dB

    ), P

    1dB

    (dB

    m),

    Psat (d

    Bm

    )

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Gain & Power vs. Vdd @ 16 GHz Power Dissipation

    Low Frequency OIP3 vs. [email protected] Pout/tone = +16dBm

    OIP3 vs. [email protected] Pout/tone = +16dBm OIP3 vs. Vdd @ Pout/tone = +16dBm

    5

    10

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    8 9 10 11

    GAIN (dB)P1dB (dBm)

    Psat (dBm)

    Vdd (V)

    Gain

    (dB

    ), P

    1dB

    (dB

    m),

    Psat (d

    Bm

    )

    0

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    1

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    4 GHz11 GHz

    18 GHz26 GHz

    PO

    WE

    R D

    ISS

    IPA

    TIO

    N (

    W)

    INPUT POWER (dBm)

    0

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    +25 C +85 C -40 C

    PA

    E (

    %)

    FREQUENCY (GHz)

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    +25 C +85 C -40 C

    FREQUENCY (GHz)

    IP3 (

    dB

    m)

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    +25 C +85 C -40C

    FREQUENCY (GHz)

    IP3 (

    dB

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    +8V+9V

    +10V+11V

    FREQUENCY (GHz)

    IP3 (

    dB

    m)

    PAE @ Psat vs. Frequency

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Output IM3 @ Vdd = 8V

    Output IM3 @ Vdd = 9V Output IM3 @ Vdd = 10V

    Output IM3 @ Vdd = 11V

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    175mA 250mA

    FREQUENCY (GHz)

    IP3 (

    dB

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    3 GHz6 GHz9 GHz

    13 GHz17 GHz21 GHz

    24 GHz27 GHz

    IM3 (

    dB

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    Pout/TONE (dBm)

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    IM3 (

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    Pout/TONE (dBm)

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    IM3 (

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    Pout/TONE (dBm)

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    IM3 (

    dB

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    Pout/TONE (dBm)

    Low Frequency Second Harmonics vs. Temperature @ Pout = +14dBm

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    +25C +85C -40C

    SE

    CO

    ND

    HA

    RM

    ON

    IC (

    dB

    c)

    FREQUENCY(GHz)

    OIP3 vs Idd @ Pout/tone = +16dBm

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Second Harmonics vs. [email protected] Pout = +14dBm

    Second Harmonics vs [email protected] Pout = +14dBm

    Second Harmonics vs. [email protected] Pout = +14dBm

    Second Harmonics vs. Pout

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    SE

    CO

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    HA

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    ON

    IC (

    dB

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    FREQUENCY(GHz)

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    SE

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    IC (

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    FREQUENCY(GHz)

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    0 4 8 12 16 20 24

    175mA 250mA

    FREQUENCY (GHz)

    SE

    CO

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    HA

    RM

    ON

    IC (

    dB

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    +25 C +85 C -40 C

    FREQUENCY (GHz)

    IP2 (

    dB

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    FREQUENCY (GHz)

    IP2 (

    dB

    m)

    Low Frequency OIP2 vs. [email protected] Pout/tone = +16dBm

    0

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    0 4 8 12 16 20 24

    +8 dBm+10 dBm+12 dBm

    +14 dBm+16 dBm+18 dBm

    SE

    CO

    ND

    HA

    RM

    ON

    IC (

    dB

    c)

    FREQUENCY(GHz)

    OIP2 vs [email protected] Pout/tone = +16dBm

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Igg1 vs. Input Power

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    10

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    40

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    0 4 8 12 16 20 24

    175mA 250mA

    FREQUENCY (GHz)

    IP2 (

    dB

    m)

    0

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    +8V+9V

    +10V+11V

    FREQUENCY (GHz)

    IP2 (

    dB

    m)

    -0.1

    -0.05

    0

    0.05

    0.1

    0.15

    0.2

    0.25

    0 4 8 12 16 20

    3 GHz6 GHz9 GHz

    13 GHz17 GHz21 GHz

    24 GHz27 GHz

    Igg1 (

    mA

    )

    Input Power (dBm)

    -1

    -0.5

    0

    0.5

    1

    1.5

    2

    2.5

    0 4 8 12 16 20

    3 GHz6 GHz9 GHz

    13 GHz17 GHz21 GHz

    24 GHz27 GHz

    Igg2 (

    mA

    )

    Input Power (dBm)

    Igg2 vs Input Power

    Idd vs Vgg1,Representative of a Typical Device

    OIP2 vs [email protected] Pout/tone = +16dBm

    OIP2 vs [email protected] Pout/tone = +16dBm

    -50

    0

    50

    100

    150

    200

    250

    300

    350

    400

    450

    -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2

    Idd (

    mA

    )

    Vgg1 (V)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Absolute Maximum RatingsDrain Bias Voltage (Vdd) +12 Vdc

    Gate Bias Voltage (Vgg1) -3 to 0 Vdc

    Gate Bias Voltage (Vgg2) 2.5V min up to (Vdd - 5.5V)

    rf input power (rfin) +25 dBm

    Continuous pdiss (T= 85 °C)(derate 38.9 mw/°C above 85 °C)

    3.5 w

    output load Vswr 7:1

    storage Temperature -65 to 150°C

    operating Temperature -40 to 85 °C

    esD sensitivity (HBm) Class 0B, passed 150V.

    eleCTrosTATiC sensiTiVe DeViCeoBserVe HAnDlinG preCAUTions

    Outline Drawing

    Package Informationpart number package Body material lead finish msl rating [1] package marking

    HmC994Apm5e roHs-compliant low stress pre-molded plastic nipdAu msl3 HmC994A

    [1] max peak reflow temperature of 260 °C

    Stresses at or above those listed under Absolute Maxi-mum Ratings may cause permanent damage to the prod-uct. This is a stress rating only, functional operation of the product at these or any other conditions above those indi-cated in the operational section of this specification is not implied. Operation beyond the maximum operating condi-tions for extended periods may affect product reliability.

    Reliability InformationChannel Temperature to maintain1 million Hour mTTf

    175 °C

    Thermal resistance (channel to ground paddle)

    25.7 °C/w

    32-Lead Lead Frame Chip Scale Package, Premolded Cavity [LFCSP_CAV]5 x 5 mm Body and 1.25 mm Package Height

    (CG-32-2)Dimensions shown in millimeters

    08-3

    0-20

    16-A

    1

    0.50BSC

    BOTTOM VIEWTOP VIEW

    SIDE VIEW

    PIN 1INDICATOR

    32

    916

    17

    24

    25

    8

    0.300.250.20

    5.105.00 SQ4.90

    0.450.400.35

    3.203.10 SQ3.00

    PKG

    -005

    068

    3.50 REF

    EXPOSEDPAD

    1.351.251.15 0.050 MAX

    0.035 NOM

    0.203 REF

    0.400.60 REF

    COPLANARITY0.08SEATING

    PLANE

    PIN 1INDICATOR AREA OPTIONS(SEE DETAIL A)

    DETAIL A(JEDEC 95)

    32-lead lead frame Chip scale package, premolded Cavity [lfCsp_CAV]5 mm × 5 mm and 1.25 mm package Height

    (CG-32-2)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    pin number function Description interface schematic

    1, 4, 6, 8, 9, 14,16, 17, 20, 22,

    24,25, 32package Bottom

    GnDThese pins & exposed ground paddle must be con-

    nected to rf/DC ground.

    2 VGG2Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. for nominal operation

    +3.5V should be applied to Vgg2

    3, 7, 10, 11,12, 18, 19, 23,26, 27, 28, 31

    n/Cno connection required. These pins may be con-nected to rf/DC ground without affecting perfor-

    mance.

    5 rfinThis pin is DC coupled and matched to 50 ohms.

    Blocking capacitor is required.

    13 Vgg1Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC

    Amplifier Biasing proceedure” application note.

    15 ACG3low frequency termination. Attach bypass capacitor

    per application circuit herein.

    21 rfoUT & Vddrf output for amplifier. Connect DC bias (Vdd) net-work to provide drain current (idd). see application

    circuit herein.

    29 ACG2

    low frequency termination. Attach bypass capacitor per application circuit herein

    30 ACG1

    Pin Descriptions

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Analog Devices upon request.

    Evaluation PCB

    Evaluation Order Informationitem Contents part number

    evaluation pCB only HmC994Apm5e evaluation pCB eV1HmC994Apm5[1]

    [1] reference this number when ordering evaluation pCB only

    item Description

    J1, J2 pCB mount K Connector

    J3, J4 DC pins Connector

    C1 - C4 100 pf Capacitor, 0402 pkg.

    C5 - C8 0.01uf Capacitor, 0402 pkg.

    C9 - C11 4.7 uf Capacitor, Tantalum.

    r1 0 ohm resistor, 0402 pkg.

    U1 HmC994Apm5e

    pCB [1] 600-01711-00 evaluation pCB.

    [1] Circuit Board material: rogers 4350 or Arlon 25fr

    600-01711-00-1CTNLGND

    VGG

    RFIN RFOUT

    THRUCAL

    GND

    C11 + C4

    C2C6

    C8C3C7

    C1

    C10

    +

    +

    C9

    C5J1 J2

    R1

    J3

    J4

    U1

    List of Materials for Evaluation Board EV1HMC994APM5

    Note:VGG = VGG1CTNL = VGG2

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Application Circuit

    NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.NOTE 2: Optional capacitors to be used if part is to be operated below 200MHz.

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994APM5Ev04.0218

    GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

    Notes

    Typical Applications FeaturesFunctional DiagramGeneral DescriptionElectrical SpecificationsPerformance CharacteristicsGain & Return LossGain vs. TemperatureInput Return Loss vs. TemperatureOutput Return Loss vs. TemperatureNoise Figure vs. FrequencyP1dB vs. TemperaturePsat vs. TemperatureP1dB vs. VddPsat vs. VddOutput IP3 vs. Temperature @ Pout = 18 dBm TonePower Compression @ 10 GHzPower DissipationSecond Harmonics vs. Temperature @ Pout = 18 dBmSecond Harmonics vs. Vdd @ Pout = 18 dBmSecond Harmonics vs. PoutReverse Isolation vs Temperature

    Absolute Maximum RatingsTypical Supply Current vs. VddOutline DrawingDie Packaging InformationPad DescriptionsAssembly DiagramApplication Circuit