HMC994APM5E - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - sm T 1 H HMC994APM5E v04.0218 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz for price, delivery, and

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H HMC994APM5Ev04.0218

GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

Functional Diagram

Features

p1dB output power: +28 dBm

psat output power: +29 dBm

High Gain: 15 dB

output ip3: +38 dBm

supply Voltage: Vdd = +10V @ 250 mA

50 ohm matched input/output

32 lead 5x5 mm smT package: 25 mm²

Typical Applications

The HmC994Apm5e is ideal for:

• Test instrumentation

• military & space

• fiber optics

General Description

The HmC994Apm5e is a GaAs pHemT mmiC Distributed wideband power Amplifier which operates between DC and 28 GHz. The amplifier provides 15 dB of gain, +29 dBm of saturated output power, and 25% pAe from a +10V supply. with up to +38 dBm output ip3 the HmC994Apm5e is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HmC994Apm5e exhibits a positive gain slope from 2 to 20 GHz making it ideal for ew, eCm, and test equipment applications. The HmC994Apm5e amplifier i/os are internally matched to 50 ohms and is packaged in a leadless Qfn 5x5 mm surface mount package.

Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2=3.5V Idd = 250 mA [1]

parameter min. Typ. max. min. Typ. max. min. Typ.. max. Units

frequency range DC - 10 10 - 20 20 - 28 GHz

Gain 12 14 12 15 13 16 dB

Gain flatness ±0.5 ±0.5 ±0.5 dB

Gain Variation over Temperature 0.008 0.011 1.016 dB/ °C

input return loss 12 12 12 dB

output return loss 25 22 20 dB

output power for 1 dB Compression (p1dB) 26 28 26 28 25 27 dBm

saturated output power (psat) 30 29.5 28 dBm

output Third order intercept (ip3)pout/tone = +16dBm

40 38 36 dBm

noise figure 4 3.5 4 dB

supply Current (idd) 250 250 250 mA

supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V

[1] Adjust Vgg1 to achieve idd = 250 mA typical; Vgg1 = -0.50V typical.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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Gain vs. Vdd

Gain & Return Loss Low Frequency Gain & Return Loss

Input Return Loss vs. Temperature

Gain vs. Temperature

-25

-20

-15

-10

-5

0

5

10

15

20

0 5 10 15 20 25 30

S21 S11 S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

5

10

15

20

0.0001 0.001 0.01 0.1 1

S21 S11 S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

6

8

10

12

14

16

18

0 5 10 15 20 25 30

+25 C +85 C -40 C

GA

IN (

dB

)

FREQUENCY (GHz)

6

8

10

12

14

16

18

0 5 10 15 20 25 30

+8V+9V

+10V+11V

GA

IN (

dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+25 C +85 C -40 C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

Gain vs. Idd

6

8

10

12

14

16

18

0 5 10 15 20 25 30

175mA200mA

225mA250mA

GA

IN (

dB

)

FREQUENCY (GHz)



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Output Return Loss vs. Idd

Input Return Loss vs. Idd

Output Return Loss vs. Temperature

Reverse Isolation vs. Temperature

Output Return Loss vs. Vdd

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

175mA200mA

225mA250mA

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+25 C +85 C -40 C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+8V+9V

+10V+11V

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

175mA200mA

225mA250mA

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

0 5 10 15 20 25 30

+25 C +85 C -40 C

ISO

LA

TIO

N (

dB

)

FREQUENCY (GHz)

Input Return Loss vs. Vdd

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+8V+9V

+10V+11V

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)



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HMC994APM5Ev04.0218


Low Frequency P1dB vs. Temperature

P1dB vs. Idd

Noise Figure vs. Idd

P1dB vs. Temperature

Noise Figure vs. Temperature

P1dB vs. Vdd

0

2

4

6

8

10

0 5 10 15 20 25 30

+25C +85C -40C

NO

ISE

FIG

UR

E (

dB

)

FREQUENCY (GHz)

0

2

4

6

8

10

0 5 10 15 20 25 30

175mA200mA

225mA250mA

NO

ISE

FIG

UR

E (

dB

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 0.3 0.5 0.8 1 1.3 1.5

+25 C +85 C -40 C

P1dB

(dB

m)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+25 C +85 C -40 C

P1dB

(dB

m)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+8V+9V

+10V+11V

P1dB

(dB

m)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

175 mA200 mA

225 mA250 mA

P1dB

(dB

m)

FREQUENCY (GHz)



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Psat vs. Temperature

Psat vs. Vdd

Low Frequency Psat vs. Temperature

20

22

24

26

28

30

32

0 0.3 0.5 0.8 1 1.3 1.5

+25 C +85 C -40 C

Psat (d

Bm

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+25 C +85 C -40 C

Psat (d

Bm

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+8V+9V

+10V+11V

Psat (d

Bm

)

FREQUENCY (GHz)

Psat vs. Idd

20

22

24

26

28

30

32

0 5 10 15 20 25 30

175 mA200 mA

225 mA250 mA

Psat (d

Bm

)

FREQUENCY (GHz)

Gain & Power vs. Idd @ 16GHz

0

4

8

12

16

20

24

28

32

240

250

260

270

280

290

300

310

0 3 6 9 12 15 18

Idd

Pout Gain PAE

Pout(

dB

m),

GA

IN(d

B),

PA

E(%

)

Idd (m

A)

INPUT POWER (dBm)

Power Compression @ 16 GHz

5

10

15

20

25

30

35

175 200 225 250

GAIN (dB)P1dB (dBm)

Psat (dBm)

Idd (mA)

Gain

(dB

), P

1dB

(dB

m),

Psat (d

Bm

)



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Gain & Power vs. Vdd @ 16 GHz Power Dissipation

Low Frequency OIP3 vs. Temperature@ Pout/tone = +16dBm

OIP3 vs. Temperature@ Pout/tone = +16dBm OIP3 vs. Vdd @ Pout/tone = +16dBm

5

10

15

20

25

30

35

8 9 10 11

GAIN (dB)P1dB (dBm)

Psat (dBm)

Vdd (V)

Gain

(dB

), P

1dB

(dB

m),

Psat (d

Bm

)

0

0.5

1

1.5

2

2.5

3

3.5

4

2 4 6 8 10 12 14 16 18

4 GHz11 GHz

18 GHz26 GHz

PO

WE

R D

ISS

IPA

TIO

N (

W)

INPUT POWER (dBm)

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

+25 C +85 C -40 C

PA

E (

%)

FREQUENCY (GHz)

10

15

20

25

30

35

40

45

0 0.3 0.6 0.9 1.2 1.5

+25 C +85 C -40 C

FREQUENCY (GHz)

IP3 (

dB

m)

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30

+25 C +85 C -40C

FREQUENCY (GHz)

IP3 (

dB

m)

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30

+8V+9V

+10V+11V

FREQUENCY (GHz)

IP3 (

dB

m)

PAE @ Psat vs. Frequency



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Output IM3 @ Vdd = 8V

Output IM3 @ Vdd = 9V Output IM3 @ Vdd = 10V

Output IM3 @ Vdd = 11V

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30

175mA 250mA

FREQUENCY (GHz)

IP3 (

dB

m)

0

10

20

30

40

50

60

70

80

90

4 6 8 10 12 14 16 18

3 GHz6 GHz9 GHz

13 GHz17 GHz21 GHz

24 GHz27 GHz

IM3 (

dB

c)

Pout/TONE (dBm)

0

10

20

30

40

50

60

70

80

90

4 6 8 10 12 14 16 18

3 GHz6 GHz9 GHz

13 GHz17 GHz21 GHz

24 GHz27 GHz

IM3 (

dB

c)

Pout/TONE (dBm)

0

10

20

30

40

50

60

70

80

90

4 6 8 10 12 14 16 18

3 GHz6 GHz9 GHz

13 GHz17 GHz21 GHz

24 GHz27 GHz

IM3 (

dB

c)

Pout/TONE (dBm)

0

10

20

30

40

50

60

70

80

90

4 6 8 10 12 14 16 18

3 GHz6 GHz9 GHz

13 GHz17 GHz21 GHz

24 GHz27 GHz

IM3 (

dB

c)

Pout/TONE (dBm)

Low Frequency Second Harmonics vs. Temperature @ Pout = +14dBm

0

10

20

30

40

50

0 0.3 0.5 0.8 1 1.3 1.5

+25C +85C -40C

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)

OIP3 vs Idd @ Pout/tone = +16dBm



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Second Harmonics vs. Vdd@ Pout = +14dBm

Second Harmonics vs Idd@ Pout = +14dBm

Second Harmonics vs. Temperature@ Pout = +14dBm

Second Harmonics vs. Pout

0

10

20

30

40

50

0 4 8 12 16 20 24

+8V+9V

+10V+11V

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

+25C +85C -40C

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

175mA 250mA

FREQUENCY (GHz)

SE

CO

ND

HA

RM

ON

IC (

dB

c)

0

10

20

30

40

50

0 0.3 0.5 0.8 1 1.3 1.5

+25 C +85 C -40 C

FREQUENCY (GHz)

IP2 (

dB

m)

0

10

20

30

40

50

0 4 8 12 16 20 24

+25 C +85 C -40C

FREQUENCY (GHz)

IP2 (

dB

m)

Low Frequency OIP2 vs. Temperature@ Pout/tone = +16dBm

0

10

20

30

40

50

0 4 8 12 16 20 24

+8 dBm+10 dBm+12 dBm

+14 dBm+16 dBm+18 dBm

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)

OIP2 vs Temperature@ Pout/tone = +16dBm



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Igg1 vs. Input Power

0

10

20

30

40

50

0 4 8 12 16 20 24

175mA 250mA

FREQUENCY (GHz)

IP2 (

dB

m)

0

10

20

30

40

50

0 4 8 12 16 20 24

+8V+9V

+10V+11V

FREQUENCY (GHz)

IP2 (

dB

m)

-0.1

-0.05

0

0.05

0.1

0.15

0.2

0.25

0 4 8 12 16 20

3 GHz6 GHz9 GHz

13 GHz17 GHz21 GHz

24 GHz27 GHz

Igg1 (

mA

)

Input Power (dBm)

-1

-0.5

0

0.5

1

1.5

2

2.5

0 4 8 12 16 20

3 GHz6 GHz9 GHz

13 GHz17 GHz21 GHz

24 GHz27 GHz

Igg2 (

mA

)

Input Power (dBm)

Igg2 vs Input Power

Idd vs Vgg1,Representative of a Typical Device

OIP2 vs Idd@ Pout/tone = +16dBm

OIP2 vs Vdd@ Pout/tone = +16dBm

-50

0

50

100

150

200

250

300

350

400

450

-1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2

Idd (

mA

)

Vgg1 (V)



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Absolute Maximum RatingsDrain Bias Voltage (Vdd) +12 Vdc

Gate Bias Voltage (Vgg1) -3 to 0 Vdc

Gate Bias Voltage (Vgg2) 2.5V min up to (Vdd - 5.5V)

rf input power (rfin) +25 dBm

Continuous pdiss (T= 85 °C)(derate 38.9 mw/°C above 85 °C)

3.5 w

output load Vswr 7:1

storage Temperature -65 to 150°C

operating Temperature -40 to 85 °C

esD sensitivity (HBm) Class 0B, passed 150V.

eleCTrosTATiC sensiTiVe DeViCeoBserVe HAnDlinG preCAUTions

Outline Drawing

Package Informationpart number package Body material lead finish msl rating [1] package marking

HmC994Apm5e roHs-compliant low stress pre-molded plastic nipdAu msl3 HmC994A

[1] max peak reflow temperature of 260 °C

Stresses at or above those listed under Absolute Maxi-mum Ratings may cause permanent damage to the prod-uct. This is a stress rating only, functional operation of the product at these or any other conditions above those indi-cated in the operational section of this specification is not implied. Operation beyond the maximum operating condi-tions for extended periods may affect product reliability.

Reliability InformationChannel Temperature to maintain1 million Hour mTTf

175 °C

Thermal resistance (channel to ground paddle)

25.7 °C/w

32-Lead Lead Frame Chip Scale Package, Premolded Cavity [LFCSP_CAV]5 x 5 mm Body and 1.25 mm Package Height

(CG-32-2)Dimensions shown in millimeters

08-3

0-20

16-A

1

0.50BSC

BOTTOM VIEWTOP VIEW

SIDE VIEW

PIN 1INDICATOR

32

916

17

24

25

8

0.300.250.20

5.105.00 SQ4.90

0.450.400.35

3.203.10 SQ3.00

PKG

-005

068

3.50 REF

EXPOSEDPAD

1.351.251.15 0.050 MAX

0.035 NOM

0.203 REF

0.400.60 REF

COPLANARITY0.08SEATING

PLANE

PIN 1INDICATOR AREA OPTIONS(SEE DETAIL A)

DETAIL A(JEDEC 95)

32-lead lead frame Chip scale package, premolded Cavity [lfCsp_CAV]5 mm × 5 mm and 1.25 mm package Height

(CG-32-2)



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pin number function Description interface schematic

1, 4, 6, 8, 9, 14,16, 17, 20, 22,

24,25, 32package Bottom

GnDThese pins & exposed ground paddle must be con-

nected to rf/DC ground.

2 VGG2Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. for nominal operation

+3.5V should be applied to Vgg2

3, 7, 10, 11,12, 18, 19, 23,26, 27, 28, 31

n/Cno connection required. These pins may be con-nected to rf/DC ground without affecting perfor-

mance.

5 rfinThis pin is DC coupled and matched to 50 ohms.

Blocking capacitor is required.

13 Vgg1Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please follow “mmiC

Amplifier Biasing proceedure” application note.

15 ACG3low frequency termination. Attach bypass capacitor

per application circuit herein.

21 rfoUT & Vddrf output for amplifier. Connect DC bias (Vdd) net-work to provide drain current (idd). see application

circuit herein.

29 ACG2

low frequency termination. Attach bypass capacitor per application circuit herein

30 ACG1

Pin Descriptions



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The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Analog Devices upon request.

Evaluation PCB

Evaluation Order Informationitem Contents part number

evaluation pCB only HmC994Apm5e evaluation pCB eV1HmC994Apm5[1]

[1] reference this number when ordering evaluation pCB only

item Description

J1, J2 pCB mount K Connector

J3, J4 DC pins Connector

C1 - C4 100 pf Capacitor, 0402 pkg.

C5 - C8 0.01uf Capacitor, 0402 pkg.

C9 - C11 4.7 uf Capacitor, Tantalum.

r1 0 ohm resistor, 0402 pkg.

U1 HmC994Apm5e

pCB [1] 600-01711-00 evaluation pCB.

[1] Circuit Board material: rogers 4350 or Arlon 25fr

600-01711-00-1CTNLGND

VGG

RFIN RFOUT

THRUCAL

GND

C11 + C4

C2C6

C8C3C7

C1

C10

+

+

C9

C5J1 J2

R1

J3

J4

U1

List of Materials for Evaluation Board EV1HMC994APM5

Note:VGG = VGG1CTNL = VGG2



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Application Circuit

NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.NOTE 2: Optional capacitors to be used if part is to be operated below 200MHz.



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Notes

Documents

HMC994APM5E - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - sm T 1 H HMC994APM5E v04.0218 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz for price, delivery, and