General Description - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - CH ip 1 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz for price,

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HMC906Av02.0617

GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

General Description

Features

Functional Diagram

The HmC906A is a four stage GaAs pHemT mmiC 2 watt power Amplifier which operates between 27.3 and 33.5 GHz. The HmC906A provides 26.5 dB of gain, and +33.5 dBm of saturated output power and 20% pAe from a +6V supply. The oip3 of 40 dBm at 28 dBm / tone provides excellent linearity for sat-ellite communications. The rf i/os are DC blocked and matched to 50 ohms for ease of integration into multi-Chip-modules (mCms). All data is taken with the chip in a 50 ohm test fixture connected via two 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).

saturated output power: +33.5 dBm @ 20% pAe

High output ip3: +44 dBm @ +24 dBm / tone

High Gain: 26.5 dB

DC supply: +6V @ 1200 mA

no external matching required

Die size: 3.18 x 2.73 x 0.1 mm

Typical Applications

The HmC906A is ideal for:

• satellite Communications

• point-to-point radios

• point-to-multi-point radios

• VsAT

• military & space

Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1]

parameter min. Typ. max. min. Typ. max. Units

frequency range 27.3 - 31.5 31.5 - 33.5 GHz

Gain 25 26.5 25 26.5 dB

input return loss 14 12

output return loss 17 16 dB

output power for 1 dB Compression (p1dB) 32 33 31.5 33.5 dBm

saturated output power (psat) 33.5 34 dBm

output Third order intercept (ip3)

pout / tone = +24 dBm44 43 dBm

Total supply Current (idd) 1200 1200 mA

supply Voltage 5 6 6.5 5 6 6.5 V

[1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve idd = 1200 mA typical. Vgg typical = -0.7 V

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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HMC906Av02.0617


Gain & Return Loss Gain vs. Temperature

-25

-20

-15

-10

-5

0

5

10

15

20

25

30

22 24 26 28 30 32 34 36

S21 S11 S22

FREQUENCY (GHz)

RE

SP

ON

SE

(dB

)

14

16

18

20

22

24

26

28

30

27 28 29 30 31 32 33 34

+25C +85C -55C

FREQUENCY (GHz)

GA

IN (

dB

)

Gain vs. Vdd Gain vs. Idd

14

16

18

20

22

24

26

28

30

27 28 29 30 31 32 33 34

1000mA1100mA

1200mA1300mA

FREQUENCY (GHz)

GA

IN (

dB

)

Input Return Loss vs. Temperature Output Return Loss vs. Temperature

-25

-20

-15

-10

-5

0

27 28 29 30 31 32 33 34

+25C +85C -55C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

25 26 27 28 29 30 31 32 33 34

+25C +85C -55C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

14

16

18

20

22

24

26

28

30

27 28 29 30 31 32 33 34

+5V+5.5V

+6V+6.5V

FREQUENCY (GHz)

GA

IN (

dB

)



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Reverse Isolation vs. Temperature P1dB vs. Temperature

Psat vs. Temperature

-70

-60

-50

-40

-30

-20

-10

0

27 28 29 30 31 32 33 34

+25C +85C -55C

ISO

LA

TIO

N (

dB

)

FREQUENCY (GHz)

24

26

28

30

32

34

36

38

27 28 29 30 31 32 33 34

+25C +85C -55C

P1dB

(dB

m)

FREQUENCY (GHz)

24

26

28

30

32

34

36

38

27 28 29 30 31 32 33 34

+25C +85C -55C

Psat (d

Bm

)

FREQUENCY (GHz)

P1dB vs. Vdd

24

26

28

30

32

34

36

38

27 28 29 30 31 32 33 34

+5V

+5.5V

+6V

+6.5V

P1dB

(dB

m)

FREQUENCY (GHz)

Psat vs. Vdd

24

26

28

30

32

34

36

38

27 28 29 30 31 32 33 34

+5V+5.5V

+6V+6.5V

Psat (d

Bm

)

FREQUENCY (GHz)

P1dB vs. Idd

24

26

28

30

32

34

36

38

27 28 29 30 31 32 33 34

1100mA 1200mA 1300mA

P1dB

(dB

m)

FREQUENCY (GHz)



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Psat vs. Idd

24

26

28

30

32

34

36

38

27 28 29 30 31 32 33 34

1100mA 1200mA 1300mA

Psat (d

Bm

)

FREQUENCY (GHz)

Power Compression @ 30 GHz

0

6

12

18

24

30

36

1100

1300

1500

1700

1900

2100

2300

-8 -6 -4 -2 0 2 4 6 8 10 12

Idd

Pout Gain PAE

Pout(

dB

m),

GA

IN(d

B),

PA

E(%

)

Idd (m

A)

INPUT POWER (dBm)

Gain and Power vs. Idd @ 30 GHz

PAE @ Psat vs. Temperature

Gain and Power vs. Vdd @ 30 GHz

20

22

24

26

28

30

32

34

36

38

40

1100 1125 1150 1175 1200 1225 1250 1275 1300

GAIN P1dB Psat

Idd (mA)

Gain

(dB

), P

1dB

(dB

m),

Psat (d

Bm

)

20

22

24

26

28

30

32

34

36

38

40

5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5

GAIN P1dB Psat

Vdd (V)

Gain

(dB

), P

1dB

(dB

m),

Psat (d

Bm

)

0

5

10

15

20

25

30

27 28 29 30 31 32 33 34

+25C +85C -55C

PA

E(%

)

FREQUENCY (GHz)

Power Dissipation @ 85C

6

7

8

9

10

11

12

-8 -6 -4 -2 0 2 4 6 8 10 12 14

28GHz29GHz30GHz

31GHz32GHz33GHz

PO

WE

R D

ISS

IPA

TIO

N (

W)

INPUT POWER (dBm)



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Output IP3 vs. Temperature, Pout/Tone = +24 dBm

25

30

35

40

45

50

27 28 29 30 31 32 33 34

+25C +85C -55C

FREQUENCY (GHz)

IP3 (

dB

m)

Output IP3 vs. Temperature, Pout/Tone = +28 dBm

25

30

35

40

45

50

27 28 29 30 31 32 33 34

+25C +85C -55C

FREQUENCY (GHz)

IP3 (

dB

m)

Output IP3 vs. Vdd, Pout/Tone = +24 dBm

Output IP3 vs. Idd, Pout/Tone = +24 dBm

Output IP3 vs. Vdd, Pout/Tone = +28 dBm

Output IP3 vs. Idd, Pout/Tone = +28 dBm

25

30

35

40

45

50

27 28 29 30 31 32 33 34

+5V

+5.5V

+6V

+6.5V

FREQUENCY (GHz)

IP3 (

dB

m)

25

30

35

40

45

50

27 28 29 30 31 32 33 34

+5V

+5.5V

+6V

+6.5V

FREQUENCY (GHz)

IP3 (

dB

m)

25

30

35

40

45

50

27 28 29 30 31 32 33 34

1100mA 1200mA 1300mA

FREQUENCY (GHz)

IP3 (

dB

m)

25

30

35

40

45

50

27 28 29 30 31 32 33 34

1100mA 1200mA 1300mA

FREQUENCY (GHz)

IP3 (

dB

m)



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Output IM3 @ Vdd=5V

Output IM3 @ Vdd=6V Output IM3 @ Vdd=6.5V

Igg vs. Input PowerIdd vs. VggRepresentative of a Typical Device

Output IM3 @ Vdd=5.5V

10

20

30

40

50

60

70

80

12 14 16 18 20 22 24 26 28

28GHz29GHz30GHz

31GHz32GHz33GHz

IM3 (

dB

c)

Pout/TONE (dBm)

10

20

30

40

50

60

70

80

12 14 16 18 20 22 24 26 28

28GHz29GHz30GHz

31GHz32GHz33GHz

IM3 (

dB

c)

Pout/TONE (dBm)

10

20

30

40

50

60

70

80

90

12 14 16 18 20 22 24 26 28

28GHz29GHz30GHz

31GHz32GHz33GHz

IM3 (

dB

c)

Pout/TONE (dBm)

10

20

30

40

50

60

70

80

12 14 16 18 20 22 24 26 28

28GHz29GHz30GHz

31GHz32GHz33GHz

IM3 (

dB

c)

Pout/TONE (dBm)

-8

-7

-6

-5

-4

-3

-2

-1

0

1

2

-10 -8 -6 -4 -2 0 2 4 6 8 10 12

28GHz29GHz30GHz

31GHz32GHz33GHz

Igg(m

A)

INPUT POWER (dBm)

-200

0

200

400

600

800

1000

1200

1400

1600

1800

-1.6 -1.4 -1.2 -1 -0.8 -0.6

Idd(m

A)

Vgg1(V)



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Absolute Maximum RatingsDrain Bias Voltage (Vd) +7V

rf input power (rfin) +20 dBm

Continuous pdiss (T= 85 °C)(derate 146.4 mw/°C above 85 °C)

13.18 w

storage Temperature -65 to +150 °C

operating Temperature -55 to +85 °C

esD sensitivity (HBm) Class 0B - passed 150V

eleCTrosTATiC sensiTiVe DeViCeoBserVe HAnDlinG preCAUTions

Channel Temperature 175 °C

nominal Junction Temperature(T=85 °C, Vdd = 10V)

134.2 °C

Thermal resistance (channel to die bottom)

6.83 °C/w

Reliabilty Information

Stresses at or above those listed in the Absolute Maximum

Ratings may cause permanent damage to the product. This

is a stress rating only, functional operation of the product

at these or any other conditions above those indicated in

the operational section of this specification is not implied.

Operation beyond the maximum operating condition for

extended periods may affect product reliability.



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Outline Drawing

noTes:1. All Dimensions Are in inCHes [mm] 2. Die THiCKness is .004”3. TYpiCAl BonD pAD is .004” sQUAre 4. BACKsiDe meTAlliZATion: GolD5. BonD pAD meTAlliZATion: GolD6. BACKsiDe meTAl is GroUnD.7. ConneCTion noT reQUireD for UnlABeleD BonD pADs.8. oVerAll Die siZe ± 0.002”

Die Packaging Information [1]

standard Alternate

Gp-1 (Gel pack) [2]

[1] Refer to the “Packaging Information” section on our website for die packaging dimensions.[2] For alternate packaging information contact Analog Devices Inc.



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Pad Descriptionspad number function Description interface schematic

1 rfinThis pad is AC coupled and matched to 50 ohms

over the operating frequency range.

2, 12 Vgg

Gate control for amplifier. external bypass caps 100 pf, 0.1 µf and 4.7 µf are required. only one pad

connection is required as these two pads are connected on-chip.

3 - 6 Vdd1Drain bias voltage for the top half of the amplifier. external

bypass capacitors of 100 pf required for each pad, followed by common 0.1 µf and 4.7 µf are capacitors.

7 rfoUT. This pad is AC coupled and matched to 50 ohms

over the operating frequency range.

8 - 11 Vdd2Drain bias voltage for the lower half of the amplifier. exter-

nal bypass capacitors of 100 pf required for each pad, followed by common 0.1 µf and 4.7 µf are capacitors.

Die Bottom GnD Die bottom must be connected to rf/DC ground.



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Application Circuit

*Vgg may be applied to either pad 2 or pad 12.

Assembly Diagram [1]

[1] Vgg may be applied to either pad 2 or pad 12.



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Mounting & Bonding Techniques for Millimeterwave GaAs MMICsThe die should be attached directly to the ground plane eutectically or with conductive epoxy (see HmC general Handling, mounting, Bonding note).

50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom-plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2).

microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

Handling PrecautionsFollow these precautions to avoid permanent damage.

Storage: All bare die are placed in either waffle or Gel based esD protec-tive containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment.

Cleanliness: Handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity: follow esD precautions to protect against esD strikes.

Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

MountingThe chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment.

epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bondingrf bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.127mm (0.005”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 1.

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.254mm (0.010”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 2.

0.150mm (0.005”) ThickMoly Tab



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Notes:

General Description - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - CH ip 1 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz for price,

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Documents

General Description - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - CH ip 1 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz for price,

Text of General Description - Analog Devices · 2019-06-05 · Amplifiers - l ine A r & p ower - CH ip...