AMPL

IFIE

RS

|| G

aAs

MM

IC P

HEM

T

408.526.1100 ◊ 408.526.1105

sales@eclipsemdi.com ◊ www.eclipsemdi.com

2095-60 Ringwood Ave ◊ San Jose, CA 95131

1 - 5

EMD1705QFN4

GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz

Typical Applications ††General Purpose Application ††Commercial and Industrial Application ††VSAT ††Test Instruments

FEATURES ◊15 dB Gain @ 10 GHz◊+24 dBm P1dB Output Power @ 10 GHz◊+8V @ 190 mA typical supply voltage◊Low Cost QFN 4mm leadless RoHS Compliant package◊ Hermetically Sealed◊Die available upon request

supply. Gain flatness of this device is

Product DescriptionEclipse Microdevices EMD1705 is a GaAs MMIC PHEMPT Distributedgeneral purpose driver amplifier. This MMIC is ideal for applicationsthat requires a typical P1dB output power of +23 dBm up to 14 GHz, while requiring only 190mA from a + 8 Volt supply. Gain flatnessof this device is less than 2.0 dB from DC to 20 GHz.The EMD1706 comes in a small RoHS compliant 4mm QFN leadlesspackage and has excellent RF and thermal properties ideal forcommercial and industrial applications.

ELECTRICAL SPECIFICATION @ +25 °C, Vdd=8V,Ids=190mA

Parameters SPECIFICATION

FREQ. (GHz)

MIN

TYPICAL

MAX

Units

Gain

2.0 8.0 14.0 20.0

16.2 14.0 15.5 14.0

16.7 15.5 17.5 15.3

dB dB dB dB

Gain Flatness dc to 10.0 10.0 to 20.0 ±1.00

±1.45 ±1.40 ±1.80

dB dB

Gain Variation Over Temperature

0.02 dB/°C

Noise Figure 6.5

dB

Input Return Loss(S11) 10 dB

Output Return Loss(S22) 8 dB

1 dB Compression Point(P1dB)

2.0 8.0 14.0 20.0

23.0 24.0 22.5 19.1

dBm dBm dBm dBm

Saturated Output Power(Psat)

2.0 8.0 14.0 20.0

25.0 24.6 24.2 21.0

dBm dBm dBm dBm

Third-Order Output Intercept Point 28 dBm

AMPL

IFIE

RS

|| G

aAs

MM

IC P

HEM

T

408.526.1100 ◊ 408.526.1105

sales@eclipsemdi.com ◊ www.eclipsemdi.com

2095-60 Ringwood Ave ◊ San Jose, CA 95131

2 - 5

EMD1705

GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz

1705 - DC-20GHz Distributed Amplifier - In Plastic

-20

-15

-10

-5

0

5

10

15

20

0 5 10 15 20 25 30

Frequency/GHz

Res

pons

e/dB

S11/dBS21/dBS22/dB

Vdd=8V; Vgg2=3.5V; Vgg1 = -0.4V; Ids=191mA

1705 in Plastic - Power Performance

10

12

14

16

18

20

22

24

26

28

30

0 2 4 6 8 10 12 14 16 18 20

Frequency/GHz

Pow

er/d

Bm

P1dB/dBmPsat/dBm

AMPL

IFIE

RS

|| G

aAs

MM

IC P

HEM

T

408.526.1100 ◊ 408.526.1105

sales@eclipsemdi.com ◊ www.eclipsemdi.com

2095-60 Ringwood Ave ◊ San Jose, CA 95131

3 - 5

EMD1705

GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz

Absolute Maximum Rating

RF Input Power: +18 dBmDrain Voltage(Vdd): +8.0 VDCGate Voltage(Vgg): -2 to 0 VoltsMax Tj 85°C: +110°CStorage Temp: -55 to +150°COperating Temp: -40 to +85°C

Functional Block Diagram

NOTES:1. MATERIAL: ROGERS 4350, 10 MIL THICK2, DIMENSIONS ARE IN INCHES[MM]

1

24

.022 [0.55]

.032 [0.80]

RF INPUT

.012 [0.30]PAD WIDTH

SQ .159 [4.05]

.039 [1.00]

Ø.010 [Ø0.25]

.010 [0.25]

SQ .105 [2.68]

RECOMMENDED PCB LAYOUT

GAP

TOP VIEW BOTTOM VIEW

REF 4.000

REF 0.8000.320TYP

0.05

12 7

2419

13

18

6

1

5

4

3

2

2.500SQ

2.200SQ

16

15

14

17

20 21 22 23

891011

24

1

0.500

4.000SQ

0.230

127

24 19

13

18

6

1

5

4

3

2

16

15

14

17

20212223

8 9 10 11

GND

RF-IN

GND

Vgg1NC NC NC

RF-OUT & Vdd

NC

GND

GND

NC

NC

NC

Vgg2 ACG1

ACG4 ACG3

24

13A3

1705

ACG2