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AMPLIFIERS || GaAs MMIC PHEMT 408.526.1100 408.526.1105 [email protected] www.eclipsemdi.com 2095-60 Ringwood Ave San Jose, CA 95131 1 - 5 EMD1705QFN4 GaAs PHEMT MMIC Driver Amplifier, QFN4mm DC to 20 GHz Typical Applications General Purpose Application Commercial and Industrial Application VSAT Test Instruments FEATURES ◊15 dB Gain @ 10 GHz ◊+24 dBm P1dB Output Power @ 10 GHz ◊+8V @ 190 mA typical supply voltage ◊Low Cost QFN 4mm leadless RoHS Compliant package ◊ Hermetically Sealed ◊Die available upon request Product Description Eclipse Microdevices EMD1705 is a GaAs MMIC PHEMPT Distributed general purpose driver amplifier. This MMIC is ideal for applications that requires a typical P1dB output power of +23 dBm up to 14 GHz, while requiring only 190mA from a + 8 Volt supply. Gain flatness of this device is less than 2.0 dB from DC to 20 GHz. The EMD1706 comes in a small RoHS compliant 4mm QFN leadless package and has excellent RF and thermal properties ideal for commercial and industrial applications. ELECTRICAL SPECIFICATION @ +25 °C, Vdd=8V,Ids=190mA Parameters SPECIFICATION FREQ. (GHz) MIN TYPICAL MAX Units Gain 2.0 8.0 14.0 20.0 16.2 14.0 15.5 14.0 16.7 15.5 17.5 15.3 dB dB dB dB Gain Flatness dc to 10.0 10.0 to 20.0 ±1.00 ±1.45 ±1.40 ±1.80 dB dB Gain Variation Over Temperature 0.02 dB/°C Noise Figure 6.5 dB Input Return Loss(S11) 10 dB Output Return Loss(S22) 8 dB 1 dB Compression Point(P1dB) 2.0 8.0 14.0 20.0 23.0 24.0 22.5 19.1 dBm dBm dBm dBm Saturated Output Power(Psat) 2.0 8.0 14.0 20.0 25.0 24.6 24.2 21.0 dBm dBm dBm dBm Third-Order Output Intercept Point 28 dBm

GaAs PHEMT MMIC Driver Amplifier, QFN4mm DC to … PHEMT MMIC Driver Amplifier, QFN4mm DC to 20 GHz Typical Applications ††General Purpose Application ††Commercial and Industrial

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    408.526.1100 408.526.1105

    [email protected] www.eclipsemdi.com

    2095-60 Ringwood Ave San Jose, CA 95131

    1 - 5

    EMD1705QFN4

    GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz

    Typical Applications General Purpose Application Commercial and Industrial Application VSAT Test Instruments

    FEATURES 15 dB Gain @ 10 GHz+24 dBm P1dB Output Power @ 10 GHz+8V @ 190 mA typical supply voltageLow Cost QFN 4mm leadless RoHS Compliant package Hermetically SealedDie available upon request

    supply. Gain flatness of this device is

    Product DescriptionEclipse Microdevices EMD1705 is a GaAs MMIC PHEMPT Distributedgeneral purpose driver amplifier. This MMIC is ideal for applicationsthat requires a typical P1dB output power of +23 dBm up to 14 GHz, while requiring only 190mA from a + 8 Volt supply. Gain flatnessof this device is less than 2.0 dB from DC to 20 GHz.The EMD1706 comes in a small RoHS compliant 4mm QFN leadlesspackage and has excellent RF and thermal properties ideal forcommercial and industrial applications.

    ELECTRICAL SPECIFICATION @ +25 C, Vdd=8V,Ids=190mA

    Parameters SPECIFICATION

    FREQ. (GHz)

    MIN

    TYPICAL

    MAX

    Units

    Gain

    2.0 8.0 14.0 20.0

    16.2 14.0 15.5 14.0

    16.7 15.5 17.5 15.3

    dB dB dB dB

    Gain Flatness dc to 10.0 10.0 to 20.0 1.00 1.45

    1.40 1.80

    dB dB

    Gain Variation Over Temperature

    0.02 dB/C

    Noise Figure 6.5

    dB

    Input Return Loss(S11) 10 dB

    Output Return Loss(S22) 8 dB

    1 dB Compression Point(P1dB)

    2.0 8.0 14.0 20.0

    23.0 24.0 22.5 19.1

    dBm dBm dBm dBm

    Saturated Output Power(Psat)

    2.0 8.0 14.0 20.0

    25.0 24.6 24.2 21.0

    dBm dBm dBm dBm

    Third-Order Output Intercept Point 28 dBm

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    408.526.1100 408.526.1105

    [email protected] www.eclipsemdi.com

    2095-60 Ringwood Ave San Jose, CA 95131

    2 - 5

    EMD1705

    GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz

    1705 - DC-20GHz Distributed Amplifier - In Plastic

    -20

    -15

    -10

    -5

    0

    5

    10

    15

    20

    0 5 10 15 20 25 30

    Frequency/GHz

    Res

    pons

    e/dB

    S11/dBS21/dBS22/dB

    Vdd=8V; Vgg2=3.5V; Vgg1 = -0.4V; Ids=191mA

    1705 in Plastic - Power Performance

    10

    12

    14

    16

    18

    20

    22

    24

    26

    28

    30

    0 2 4 6 8 10 12 14 16 18 20

    Frequency/GHz

    Pow

    er/d

    Bm

    P1dB/dBmPsat/dBm

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    408.526.1100 408.526.1105

    [email protected] www.eclipsemdi.com

    2095-60 Ringwood Ave San Jose, CA 95131

    3 - 5

    EMD1705

    GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz

    Absolute Maximum Rating

    RF Input Power: +18 dBmDrain Voltage(Vdd): +8.0 VDCGate Voltage(Vgg): -2 to 0 VoltsMax Tj 85C: +110CStorage Temp: -55 to +150COperating Temp: -40 to +85C

    Functional Block Diagram

    NOTES:1. MATERIAL: ROGERS 4350, 10 MIL THICK2, DIMENSIONS ARE IN INCHES[MM]

    1

    24

    .022 [0.55]

    .032 [0.80]

    RF INPUT

    .012 [0.30]PAD WIDTH

    SQ .159 [4.05]

    .039 [1.00]

    .010 [0.25]

    .010 [0.25]

    SQ .105 [2.68]

    RECOMMENDED PCB LAYOUT

    GAP

    TOP VIEW BOTTOM VIEW

    REF 4.000

    REF 0.8000.320TYP

    0.05

    12 7

    2419

    13

    18

    6

    1

    5

    4

    3

    2

    2.500SQ

    2.200SQ

    16

    15

    14

    17

    20 21 22 23

    891011

    24

    1

    0.500

    4.000SQ

    0.230

    127

    24 19

    13

    18

    6

    1

    5

    4

    3

    2

    16

    15

    14

    17

    20212223

    8 9 10 11

    GND

    RF-IN

    GND

    Vgg1NC NC NC

    RF-OUT & Vdd

    NC

    GND

    GND

    NC

    NC

    NC

    Vgg2 ACG1

    ACG4 ACG3

    24

    13A3

    1705

    ACG2

    1705QFN4 pg11705QFN4 pg21705QFN4 pg3