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AMPLIFIERS - LINEAR & POWER - CHIP 1 HMC994A v04.0918 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. General Description Features Functional Diagram High P1dB Output Power: 28 dBm High Psat Output Power: 30 dBm High Gain: 14 dB High Output IP3: 39 dBm Supply Voltage: +10 V @ 250 mA 50 Ohm Matched Input/Output Die Size: 2.75 x 1.45 x 0.1 mm Typical Applications The HMC994A is ideal for: • Test Instrumentation • Military & Space • Fiber Optics Electrical Specifications, T A = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 250 mA* Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 18 18 - 26 26 - 30 GHz Gain 11.5 14.5 12 15 12.5 15.5 dB Gain Flatness ±0.25 ±0.5 ±0.15 dB Gain Variation Over Temperature 0.004 0.005 0.01 dB/ °C Input Return Loss 13 22 22 dB Output Return Loss 20 18 20 dB Output Power for 1 dB Compression (P1dB) 26 28 26 28 24.5 27.5 dBm Saturated Output Power (Psat) 30 30 29 dBm Output Third Order Intercept (IP3) Pout / tone = +16dBm 39 36 36 dBm Noise Figure 3.5 3 3.5 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.6V Typ.) 250 250 250 mA Supply Voltage 8 10 11 8 10 11 8 10 11 V * Adjust Vgg1 between -2 to 0 V to achieve 250 mA typical, Vgg1 typical = -0.6 V The HMC994A is a GaAs MMIC pHEMT Distrib- uted Power Amplifier which operates between DC and 30 GHz. The amplifier provides 14 dB of gain, +39 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 250 mA from a +10 V supply. The HMC994A exhibits a slightly positive gain slope from 2 to 20 GHz, making it ideal for EW, ECM, Radar and test equipment applica- tions. With up to 39 dBm Output IP3 the HMC994A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HMC994A amplifier I/Os are internally matched to 50 Ohms facilitating inte- gration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

AMPLIFIERS - LINEAR & POWER - CHIP · 2019. 6. 5. · AMPLIFIERS - LINEAR & POWER - CHIP 1 HMC994A v04.0918 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz For price, delivery,

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

    Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

    General Description

    Features

    Functional Diagram

    High P1dB Output Power: 28 dBm

    High Psat Output Power: 30 dBm

    High Gain: 14 dB

    High Output IP3: 39 dBm

    Supply Voltage: +10 V @ 250 mA

    50 Ohm Matched Input/Output

    Die Size: 2.75 x 1.45 x 0.1 mm

    Typical Applications

    The HMC994A is ideal for:

    • Test Instrumentation

    • Military & Space

    • Fiber Optics

    Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 250 mA*

    Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

    Frequency Range DC - 18 18 - 26 26 - 30 GHz

    Gain 11.5 14.5 12 15 12.5 15.5 dB

    Gain Flatness ±0.25 ±0.5 ±0.15 dB

    Gain Variation Over Temperature 0.004 0.005 0.01 dB/ °C

    Input Return Loss 13 22 22 dB

    Output Return Loss 20 18 20 dB

    Output Power for 1 dB Compression (P1dB) 26 28 26 28 24.5 27.5 dBm

    Saturated Output Power (Psat) 30 30 29 dBm

    Output Third Order Intercept (IP3) Pout / tone = +16dBm

    39 36 36 dBm

    Noise Figure 3.5 3 3.5 dB

    Supply Current(Idd) (Vdd= 10V, Vgg1= -0.6V Typ.)

    250 250 250 mA

    Supply Voltage 8 10 11 8 10 11 8 10 11 V

    * Adjust Vgg1 between -2 to 0 V to achieve 250 mA typical, Vgg1 typical = -0.6 V

    The HMC994A is a GaAs MMIC pHEMT Distrib-uted Power Amplifier which operates between DC and 30 GHz. The amplifier provides 14 dB of gain, +39 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 250 mA from a +10 V supply. The HMC994A exhibits a slightly positive gain slope from 2 to 20 GHz, making it ideal for EW, ECM, Radar and test equipment applica-tions. With up to 39 dBm Output IP3 the HMC994A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HMC994A amplifier I/Os are internally matched to 50 Ohms facilitating inte-gration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Gain vs. Vdd

    Gain & Return Loss Low Frequency Gain & Return Loss

    Gain vs. Temperature

    Gain vs. Idd Input Return Loss vs. Temperature

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    FREQUENCY (GHz)

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    175mA 250mA

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    FREQUENCY (GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Input Return Loss vs. Vdd Input Return Loss vs. Idd

    Output Return Loss vs. Temperature Output Return Loss vs. Vdd

    Output Return Loss vs. Idd Reverse Isolation vs. Temperature

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    RET

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    FREQUENCY (GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Noise Figure vs Idd

    Low Frequency P1dB vs. Temperature

    Noise Figure vs. Temperature

    P1dB vs. Temperature

    Low Frequency P1dB vs. Vdd P1dB vs. Vdd

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    NO

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    P1dB

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    FREQUENCY (GHz)

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    FREQUENCY (GHz)

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    FREQUENCY (GHz)

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    P1dB

    (dB

    m)

    FREQUENCY (GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Gain & Power vs. Idd @ 16 GHz

    P1dB vs. Idd Psat vs Temperature

    Psat vs. Vdd Psat vs Idd

    Power Compression @ 16 GHz

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    175mA 250mA

    P1dB

    (dBm

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    FREQUENCY (GHz)

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    Psat (d

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    FREQUENCY (GHz)

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    Psat (d

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    FREQUENCY (GHz)

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    FREQUENCY (GHz)

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    0 2 4 6 8 10 12 14 16 18 20 22

    Idd

    Pout Gain PAE

    Pout(

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    GA

    IN(d

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    PA

    E(%

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    INPUT POWER (dBm)

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    GAIN P1dB Psat

    Vdd (V)

    Gain

    (dB

    ), P

    1dB

    (dB

    m),

    Psat (d

    Bm

    )

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Gain & Power vs Vdd @ 16 GHz Power Dissipation @ 85C

    PAE @ Psat vs TemperatureLow Frequency OIP3 vs [email protected] Pout/tone = +16dBm

    OIP3 vs. [email protected] Pout/tone = +16dBm

    Low Frequency OIP3 vs [email protected] Pout/tone = +16dB

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    Vdd (V)

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    Psat (d

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    16GHz20GHz24GHz

    28GHz

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    FREQUENCY (GHz)

    IP3 (

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    +8V +10V +11V

    FREQUENCY (GHz)

    IP3 (

    dB

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  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

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    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Second Harmonics vs. Temperature @ Pout = +14 dBm

    OIP3 vs [email protected] Pout/tone = +16dBm

    OIP3 vs [email protected] Pout/tone = +16dBm

    Output IM3 @ Vdd=8V Output IM3 @ Vdd=10V

    Output IM3 @ Vdd=11V

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    FREQUENCY(GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Second Harmonics vs. Vdd @ Pout = +14 dBm Second Harmonics vs. Pout

    OIP2 vs. [email protected] Pout/tone = +16dBm

    OIP2 vs. [email protected] Pout/tone = +16dBm

    OIP2 vs. [email protected] Pout/tone = +16dBm

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    IP2 (

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    FREQUENCY(GHz)

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    IP2 (

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    175mA 250mA

    IP2 (

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    FREQUENCY(GHz)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Igg1 vs. Input Power Igg2 vs. Input Power

    Idd vs. Vgg1Representative of a Typical Device

    -0.6

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    Igg1 (

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    Input Power (dBm)

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    Idd(m

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    Vgg1(V)

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONS

    Drain Bias Voltage (Vdd) 12V

    Gate Bias Voltage (Vgg1) -3 to 0 Vdc

    Gate Bias Voltage (Vgg2) 2.5V min up to (Vdd - 5.5V)

    RF Input Power (RFIN) 25 dBm

    Output Load VSWR 7:1

    Continuous Pdiss (T= 85 °C)(derate 40.3 mW/°C above 85 °C)

    3.62 W

    Storage Temperature -65 to 150 °C

    Operating Temperature -55 to 85 °C

    ESD Sensitivity (HBM) Class 0B - Passed 150V

    Absolute Maximum Ratings Reliabilty InformationChannel Temperature to Maintain1 Million Hour MTTF

    175 °C

    Thermal Resistance (channel to die bottom)

    24.8 °C/W

    Stresses at or above those listed in the Absolute Maximum

    Ratings may cause permanent damage to the product. This

    is a stress rating only, functional operation of the product

    at these or any other conditions above those indicated in

    the operational section of this specification is not implied.

    Operation beyond the maximum operating condition for

    extended periods may affect product reliability.

    Outline Drawing

    Die Packaging Information [1]

    Standard Alternate

    GP-1 (Gel Pack) [2]

    [1] Refer to the “Packaging Information” section on our website for die packaging dimensions.

    [2] For alternate packaging information contact Analog Devices Inc.

    NOTES:1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100)3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE4. BOND PAD METALIZATION: GOLD5. BACKSIDE METALLIZATION: GOLD6. BACKSIDE METAL IS GROUND7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

    8. OVERALL DIE SIZE IS ±.002

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Pad Number Function Description Interface Schematic

    1 RFINThis pad is DC coupled and matched

    to 50 Ohms. Blocking capacitor is required.

    2 VGG2Gate control 2 for amplifier. Attach bypass

    capacitors per application circuit herein. For nominal operation +3.5V should be applied to Vgg2.

    3 ACG1Low frequency termination. Attach bypass

    capacitor per application circuit herein.

    4 ACG2Low frequency termination. Attach bypass

    capacitor per application circuit herein.̀

    5 RFOUT & VDDRF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein.

    6 ACG3Low frequency termination. Attach bypass capacitors per application circuit herein.

    7 ACG4Low frequency termination. Attach bypass capacitors per application circuit herein.

    8 VGG1

    Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please

    follow “MMIC Amplifier Biasing Procedure” application note.

    Die Bottom GND Die bottom must be connected to RF/DC ground.

    Pad Descriptions

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Application Circuit

    NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500 mA.

    NOTE 2: Optional capacitors to be used if part is to be operated below 200MHz.

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Assembly Diagram

  • For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

    Application Support: Phone: 1-800-ANALOG-D

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    HMC994Av04.0918

    GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

    Mounting & Bonding Techniques for Millimeterwave GaAs MMICsThe die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

    50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accom-plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).

    Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

    Handling PrecautionsFollow these precautions to avoid permanent damage.

    Storage: All bare die are placed in either Waffle or Gel based ESD pro-tective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.

    Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

    Static Sensitivity: Follow ESD precautions to protect against ESD strikes.

    Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.

    General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

    MountingThe chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

    Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.

    Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

    Wire BondingRF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

    0.102mm (0.004”) Thick GaAs MMIC

    Wire Bond

    RF Ground Plane

    0.254mm (0.010”) Thick AluminaThin Film Substrate

    0.076mm(0.003”)

    Figure 2.

    0.150mm (0.005”) ThickMoly Tab

    0.102mm (0.004”) Thick GaAs MMIC

    Wire Bond

    RF Ground Plane

    0.127mm (0.005”) Thick AluminaThin Film Substrate

    0.076mm(0.003”)

    Figure 1.

    Typical ApplicationsFeaturesFunctional DiagramGeneral DescriptionElectrical SpecificationsPerformance CharacteristicsGain & Return LossInput Return Loss vs. TemperatureSecond Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA

    Absolute Maximum RatingsPad DescriptionsAssembly DiagramApplication Circuit