AMPLIFIERS - LINEAR & POWER - CHIP · 2019. 6. 5. · AMPLIFIERS - LINEAR & POWER - CHIP 1 HMC994A v04.0918 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz For price, delivery,

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HMC994Av04.0918

GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

General Description

Features

Functional Diagram

High P1dB Output Power: 28 dBm

High Psat Output Power: 30 dBm

High Gain: 14 dB

High Output IP3: 39 dBm

Supply Voltage: +10 V @ 250 mA

50 Ohm Matched Input/Output

Die Size: 2.75 x 1.45 x 0.1 mm

Typical Applications

The HMC994A is ideal for:

• Test Instrumentation

• Military & Space

• Fiber Optics

Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 250 mA*

Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

Frequency Range DC - 18 18 - 26 26 - 30 GHz

Gain 11.5 14.5 12 15 12.5 15.5 dB

Gain Flatness ±0.25 ±0.5 ±0.15 dB

Gain Variation Over Temperature 0.004 0.005 0.01 dB/ °C

Input Return Loss 13 22 22 dB

Output Return Loss 20 18 20 dB

Output Power for 1 dB Compression (P1dB) 26 28 26 28 24.5 27.5 dBm

Saturated Output Power (Psat) 30 30 29 dBm

Output Third Order Intercept (IP3) Pout / tone = +16dBm

39 36 36 dBm

Noise Figure 3.5 3 3.5 dB

Supply Current(Idd) (Vdd= 10V, Vgg1= -0.6V Typ.)

250 250 250 mA

Supply Voltage 8 10 11 8 10 11 8 10 11 V

* Adjust Vgg1 between -2 to 0 V to achieve 250 mA typical, Vgg1 typical = -0.6 V

The HMC994A is a GaAs MMIC pHEMT Distrib-uted Power Amplifier which operates between DC and 30 GHz. The amplifier provides 14 dB of gain, +39 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 250 mA from a +10 V supply. The HMC994A exhibits a slightly positive gain slope from 2 to 20 GHz, making it ideal for EW, ECM, Radar and test equipment applica-tions. With up to 39 dBm Output IP3 the HMC994A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. The HMC994A amplifier I/Os are internally matched to 50 Ohms facilitating inte-gration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

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HMC994Av04.0918


Gain vs. Vdd

Gain & Return Loss Low Frequency Gain & Return Loss

Gain vs. Temperature

Gain vs. Idd Input Return Loss vs. Temperature

-25

-20

-15

-10

-5

0

5

10

15

20

0 5 10 15 20 25 30

S21 S11 S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

5

10

15

20

0.0001 0.001 0.01 0.1 1

S21 S11 S22

RE

SP

ON

SE

(dB

)

FREQUENCY (GHz)

6

8

10

12

14

16

18

0 5 10 15 20 25 30

+25C +85C -55C

GA

IN (

dB

)

FREQUENCY (GHz)

6

8

10

12

14

16

18

0 5 10 15 20 25 30

+8V +10V +11V

GA

IN (

dB

)

FREQUENCY (GHz)

6

8

10

12

14

16

18

0 5 10 15 20 25 30

175mA 250mA

GA

IN (

dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+25C +85C -55C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)



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HMC994Av04.0918


Input Return Loss vs. Vdd Input Return Loss vs. Idd

Output Return Loss vs. Temperature Output Return Loss vs. Vdd

Output Return Loss vs. Idd Reverse Isolation vs. Temperature

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+8V +10V +11V

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

175mA 250mA

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+25C +85C -55C

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

+8V +10V +11V

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 5 10 15 20 25 30

175mA 250mA

RET

UR

N L

OSS

(dB)

FREQUENCY (GHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

0 5 10 15 20 25 30

+25C +85C -55C

ISO

LA

TIO

N (

dB

)

FREQUENCY (GHz)



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HMC994Av04.0918


Noise Figure vs Idd

Low Frequency P1dB vs. Temperature

Noise Figure vs. Temperature

P1dB vs. Temperature

Low Frequency P1dB vs. Vdd P1dB vs. Vdd

0

2

4

6

8

10

0 5 10 15 20 25 30

+25C +85C -55C

NO

ISE

FIG

UR

E (

dB

)

FREQUENCY (GHz)

0

2

4

6

8

10

0 5 10 15 20 25 30

175mA 250mA

NO

ISE

FIG

UR

E (

dB

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 0.3 0.6 0.9 1.2 1.5

+25C +85C -55C

P1dB

(dB

m)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+25C +85C -55C

P1dB

(dB

m)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 0.3 0.6 0.9 1.2 1.5

+8V +10V +11V

P1dB

(dB

m)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+8V +10V +11V

P1dB

(dB

m)

FREQUENCY (GHz)



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HMC994Av04.0918


Gain & Power vs. Idd @ 16 GHz

P1dB vs. Idd Psat vs Temperature

Psat vs. Vdd Psat vs Idd

Power Compression @ 16 GHz

20

22

24

26

28

30

32

0 5 10 15 20 25 30

175mA 250mA

P1dB

(dBm

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+25C +85C -55C

Psat (d

Bm

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

+8V +10V +11V

Psat (d

Bm

)

FREQUENCY (GHz)

20

22

24

26

28

30

32

0 5 10 15 20 25 30

175mA 250mA

Psat (d

Bm

)

FREQUENCY (GHz)

0

4

8

12

16

20

24

28

32

250

265

280

295

310

325

340

355

370

0 2 4 6 8 10 12 14 16 18 20 22

Idd

Pout Gain PAE

Pout(

dB

m),

GA

IN(d

B),

PA

E(%

)

Idd (m

A)

INPUT POWER (dBm)

10

15

20

25

30

35

175 200 225 250

GAIN P1dB Psat

Vdd (V)

Gain

(dB

), P

1dB

(dB

m),

Psat (d

Bm

)



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HMC994Av04.0918


Gain & Power vs Vdd @ 16 GHz Power Dissipation @ 85C

PAE @ Psat vs TemperatureLow Frequency OIP3 vs Temperature@ Pout/tone = +16dBm

OIP3 vs. Temperature@ Pout/tone = +16dBm

Low Frequency OIP3 vs Vdd@ Pout/tone = +16dB

10

15

20

25

30

35

8 9 10 11

GAIN P1dB Psat

Vdd (V)

Gain

(dB

), P

1dB

(dB

m),

Psat (d

Bm

)

1

1.5

2

2.5

3

3.5

0 4 8 12 16 20

4GHz8GHz12GHz

16GHz20GHz24GHz

28GHz

PO

WE

R D

ISS

IPA

TIO

N (

W)

INPUT POWER (dBm)

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

+25C +85C -55C

FREQUENCY (GHz)

PA

E (

%)

10

15

20

25

30

35

40

45

0 0.3 0.6 0.9 1.2 1.5

+25C +85C -55C

FREQUENCY (GHz)

IP3 (

dB

m)

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30

+25C +85C -55C

FREQUENCY (GHz)

IP3 (

dB

m)

10

15

20

25

30

35

40

45

0 0.3 0.6 0.9 1.2 1.5

+8V +10V +11V

FREQUENCY (GHz)

IP3 (

dB

m)



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HMC994Av04.0918


Second Harmonics vs. Temperature @ Pout = +14 dBm

OIP3 vs Vdd@ Pout/tone = +16dBm

OIP3 vs Idd@ Pout/tone = +16dBm

Output IM3 @ Vdd=8V Output IM3 @ Vdd=10V

Output IM3 @ Vdd=11V

10

15

20

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30

35

40

45

0 5 10 15 20 25 30

+8V +10V +11V

FREQUENCY (GHz)

IP3 (

dB

m)

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30

175mA 250mA

FREQUENCY (GHz)

IP3 (

dB

m)

0

10

20

30

40

50

60

70

80

90

2 4 6 8 10 12 14 16 18 20

2GHz6GHz10GHz

14GHz18GHz22GHz

26GHz30GHz

IM3 (

dB

c)

Pout/TONE (dBm)

0

10

20

30

40

50

60

70

80

90

2 4 6 8 10 12 14 16 18 20

2GHz6GHz10GHz

14GHz18GHz22GHz

26GHz30GHz

IM3 (

dB

c)

Pout/TONE (dBm)

0

10

20

30

40

50

60

70

80

90

2 4 6 8 10 12 14 16 18 20

2GHz6GHz10GHz

14GHz18GHz22GHz

26GHz30GHz

IM3 (

dB

c)

Pout/TONE (dBm)

0

10

20

30

40

50

0 4 8 12 16 20 24

+25C +85C -55C

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)



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Second Harmonics vs. Vdd @ Pout = +14 dBm Second Harmonics vs. Pout

OIP2 vs. Temperature@ Pout/tone = +16dBm

OIP2 vs. Vdd@ Pout/tone = +16dBm

OIP2 vs. Idd@ Pout/tone = +16dBm

0

10

20

30

40

50

0 4 8 12 16 20 24

+8V +10V +11V

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

+4dBm+6dBm+8dBm

+10dBm+12dBm+14dBm

+16dBm

SE

CO

ND

HA

RM

ON

IC (

dB

c)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

+25C +85C -55C

IP2 (

dB

m)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

+8V +10V +11V

IP2 (

dB

m)

FREQUENCY(GHz)

0

10

20

30

40

50

0 4 8 12 16 20 24

175mA 250mA

IP2 (

dB

m)

FREQUENCY(GHz)



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HMC994Av04.0918


Igg1 vs. Input Power Igg2 vs. Input Power

Idd vs. Vgg1Representative of a Typical Device

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

2 4 6 8 10 12 14 16 18 20

2GHz6GHz10GHz

14GHz18GHz22GHz

26GHz30GHz

Igg1 (

mA

)

Input Power (dBm)

-1

-0.5

0

0.5

1

1.5

2

2 4 6 8 10 12 14 16 18 20

2GHz6GHz10GHz

14GHz18GHz22GHz

26GHz30GHz

Igg2 (

mA

)

Input Power (dBm)

-25

0

25

50

75

100

125

150

175

200

225

250

275

300

325

-1.6 -1.4 -1.2 -1 -0.8 -0.6

Idd(m

A)

Vgg1(V)



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HMC994Av04.0918


ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONS

Drain Bias Voltage (Vdd) 12V

Gate Bias Voltage (Vgg1) -3 to 0 Vdc

Gate Bias Voltage (Vgg2) 2.5V min up to (Vdd - 5.5V)

RF Input Power (RFIN) 25 dBm

Output Load VSWR 7:1

Continuous Pdiss (T= 85 °C)(derate 40.3 mW/°C above 85 °C)

3.62 W

Storage Temperature -65 to 150 °C

Operating Temperature -55 to 85 °C

ESD Sensitivity (HBM) Class 0B - Passed 150V

Absolute Maximum Ratings Reliabilty InformationChannel Temperature to Maintain1 Million Hour MTTF

175 °C

Thermal Resistance (channel to die bottom)

24.8 °C/W

Stresses at or above those listed in the Absolute Maximum

Ratings may cause permanent damage to the product. This

is a stress rating only, functional operation of the product

at these or any other conditions above those indicated in

the operational section of this specification is not implied.

Operation beyond the maximum operating condition for

extended periods may affect product reliability.

Outline Drawing

Die Packaging Information [1]

Standard Alternate

GP-1 (Gel Pack) [2]

[1] Refer to the “Packaging Information” section on our website for die packaging dimensions.

[2] For alternate packaging information contact Analog Devices Inc.

NOTES:1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100)3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE4. BOND PAD METALIZATION: GOLD5. BACKSIDE METALLIZATION: GOLD6. BACKSIDE METAL IS GROUND7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

8. OVERALL DIE SIZE IS ±.002



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HMC994Av04.0918


Pad Number Function Description Interface Schematic

1 RFINThis pad is DC coupled and matched

to 50 Ohms. Blocking capacitor is required.

2 VGG2Gate control 2 for amplifier. Attach bypass

capacitors per application circuit herein. For nominal operation +3.5V should be applied to Vgg2.

3 ACG1Low frequency termination. Attach bypass

capacitor per application circuit herein.

4 ACG2Low frequency termination. Attach bypass

capacitor per application circuit herein.̀

5 RFOUT & VDDRF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein.

6 ACG3Low frequency termination. Attach bypass capacitors per application circuit herein.

7 ACG4Low frequency termination. Attach bypass capacitors per application circuit herein.

8 VGG1

Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please

follow “MMIC Amplifier Biasing Procedure” application note.

Die Bottom GND Die bottom must be connected to RF/DC ground.

Pad Descriptions



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HMC994Av04.0918


Application Circuit

NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500 mA.

NOTE 2: Optional capacitors to be used if part is to be operated below 200MHz.



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Assembly Diagram



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Mounting & Bonding Techniques for Millimeterwave GaAs MMICsThe die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accom-plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

Handling PrecautionsFollow these precautions to avoid permanent damage.

Storage: All bare die are placed in either Waffle or Gel based ESD pro-tective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity: Follow ESD precautions to protect against ESD strikes.

Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.

General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.

MountingThe chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire BondingRF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.254mm (0.010”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 2.

0.150mm (0.005”) ThickMoly Tab

0.102mm (0.004”) Thick GaAs MMIC

Wire Bond

RF Ground Plane

0.127mm (0.005”) Thick AluminaThin Film Substrate

0.076mm(0.003”)

Figure 1.

Documents

AMPLIFIERS - LINEAR & POWER - CHIP · 2019. 6. 5. · AMPLIFIERS - LINEAR & POWER - CHIP 1 HMC994A v04.0918 GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz For price, delivery,