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學生 :李國彰

指導教授：林志明

A Fully Matched High Linearity 2-w

PHEMT MMIC Power Amplifier for

3.5 GHz Application ( IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 15, NO. 10, OCTOBER 2005 )

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Outline• Abstract• Terms• Circuit design 1• Circuit design 2• Process• Result • Conclusion• References

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Abstract• MMIC PA ( monolithic microwave integrat

ed circuit power amplifier ) ( 3.3~3.8 GHz ) ( AlGaAs / InGaAs/GaAs PHEMT )

• Application (WCDMA , WLL , MMDS )

• Performance (30.4dB small-signal gain )

(34dBm 1-dB power compression)

(37.1% PAE) (43.5 dBm IP3 )

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Terms• PHEMT ( pseudomorphic high electronic mobility tra

nsistor)• WCDMA ( wide band code division multiple access )• WLL ( wireless local loop )• MMDS (multichannel multipoint distribution service )• 1-dB power compression point • PAE ( power added efficiency )• IP3 ( third-order intercept point )

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1 dB power compression point

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Circuit design 1• De-embedded

-two port S parameters ( 1.25mm PHEMT )

-HP8510c vector network analyzer

• Parasitic parameter ( cold-FET method )

• Intrinsic parameter ( hot-FET method )

-Reference [9][10]

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Circuit design 2• Output matching network -transfer max output power from the FET to a 50

Ω system• Inter-stage matching network -transfer ΓIN,2 to minimize the mismatch loss

• Input network -improve impedance match for a better input

return loss• Micro-strip line ( design rule )

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Process• Fabricated by conventional photolithography on AlGaAs/InGaAs/GaAs PHEMT structure• Gate length ( 0.4 μm )• Gate width ( 1.25mm)(Q1)(5mm)(Q2)• Dimension -1.97mm*1.33mm

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Result• MMIC( vd=8v ,vg=-0.81v, Ids=700m

A)

(driver)(150mA)(power)(550mA)

• P1dB ( 34 dBm ) , PAE ( 37.1% )

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Conclusion• Small dimension

• 34dBm P1dB , 37.1% PAE

• 30.4dB small-signal gain• 10/5 dB input / output return loss• 43.5dBm third-order intercept point• Suitable for W-CDMA , MMDS

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References• [1] E. Lan, E. Johnson, B. Knappenberger, and M. Miller, “InGa

P PHEMTs for 3.5 GHz W-CDMA applications,” in IEEE MTT-S Int. Dig., vol. 2, 2002, pp. 1039–1042.

• [2] W. C. B. Peatman, O. Hartin, B. Knappenberger, M. Millerm, and R.

Hooper, “Power amplifier for 3.5 GHz WCDMA applications,” in IEEE GaAs IC Dig., Oct. 2000, pp. 71–74.

• [3] P. Blount, J. Cuggino, and J. McPhee, “A 3.5 GHz fully integrated power amplifier module,” in 23rd Annu. Technical Dig. Gallium Arsenide Integrated Circuit (GaAs IC) Symp., Oct. 21–24, 2001, pp. 111–114.

• [4] T. Murae, K. Fujii, and T. Matsuno, “A compact S-band MMIC high

power amplifier module,” in IEEE MTT-S Int. Dig., vol. 2, Jun. 11–16, 2000, pp. 943–946.

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References• [5] S. Rockwell, R. Emrick, B. Bosco, S. Franson, M. Miller, E. Johnson, and J. Crowder, “An 8-Watt 3.5 GHz power amplifier with tunable match

ing,” in 24th Annu. Technical Dig. Gallium Arsenide Integrated Circuit (GaAs IC) Symp., Oct. 20–23, 2002, pp. 185–188.

• [6] J. J. Komiak and D. Helms, “High-efficiency 20 Watt S/C-band power amplifier MMIC,” in IEEE 14th Annu. Gallium Arsenide Integrated Circuit Symp. Technical Dig., Oct. 4–7, 1992, pp. 187–190.• [7] J. J.Komiak, “Octave band elevenwatt power amplifier MMIC,” in IEE

E Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., May 7–8, 19

90, pp. 35–38.• [8] L. E. Larson, RF and Microwave Circuit Design for Wireless Commu

nications. Norwell, MA: Artech House, Inc., 1996.• [9] G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microw. Theory Tech., vol. MTT-36, no. 7, pp. 1151–1159, Jul. 1988.

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References• [10] R. Anholt and S. Swirhun, “Equivalent-circuit parameter extraction for cold GaAs MESFETs,” IEEE Trans. Microw. Theory Tech., vol. MTT-39, no. 7, pp. 1243–1247, Jul. 1991.• [11] S. C. Cripps, “A theory for the prediction of GaAs FET load-pull power contours,” in IEEE MTT-S Int. Dig., 1983, pp. 221–223.• [12] , RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 1999.• [13] H. Z. Liu, C. C.Wang, Y. H.Wang, C. C. Hsu, C. H. Chang,W.Wu, C. L. Wu, and C. S. Chang, “A single-bias C-band 29 dBm PHEMT MMIC power amplifier,” in Int. Conf. Solid State Devices Materials, Nagoya, Japan, Sep. 18–20, 2002, pp. 636–637.• [14] T. Senju, T. Asano, and H. Ishimura, “A very small 3.5 GHz 1 W MMIC power amplifier with die size reduction technologies,” in IEEE Emerging Technologies Symp. Broadband Communications Internet Era Symp. Dig., Sep. 10–11, 2001, pp. 70–73.