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ELEC
3221
Dig
ital
IC&
Syte
ms
Des
ign
Iain
McN
ally
≈10
lect
ures
Kou
shik
Mah
arat
na
≈12
lect
ures
Base
lHal
ak
≈12
lect
ures
1001
Dig
ital
IC&
Syte
ms
Des
ign
•A
sses
smen
t10
%C
ours
ewor
kL-
Edit
Gat
eD
esig
n(B
IM)
90%
Exam
inat
ion
•Bo
oks
Inte
grat
edC
ircu
itD
esig
n
a.k.
a.Pr
inci
ples
ofC
MO
SV
LSID
esig
n-A
Cir
cuit
san
dSy
stem
sPe
rspe
ctiv
e
Nei
lWes
te&
Dav
idH
arri
s
Pear
son,
2011
Dig
ital
Syst
emD
esig
nw
ith
Syst
emV
eril
og
Mar
kZ
wol
insk
i
Pear
son
Pren
tice
-Hal
l,20
10
1002
Dig
ital
IC&
Syte
ms
Des
ign
Iain
McN
ally
Inte
grat
edC
ircu
itD
esig
n•
Con
tent
–In
trod
ucti
on
–O
verv
iew
ofTe
chno
logi
es
–La
yout
–C
MO
SPr
oces
sing
–D
esig
nR
ules
and
Abs
trac
tion
–C
ellD
esig
nan
dEu
ler
Path
s
–Sy
stem
Des
ign
usin
gSt
anda
rdC
ells
–W
ider
Vie
w
•N
otes
&R
esou
rces
https://secure.ecs.soton.ac.uk/notes/bim/notes/icd/
1003
His
tory
1947
Firs
tTra
nsis
tor
John
Bard
een,
Wal
ter
Brat
tain
,and
Will
iam
Shoc
kley
(Bel
lLab
s)
1952
Inte
grat
edC
ircu
its
Prop
osed
Geo
ffre
yD
umm
er(R
oyal
Rad
arEs
tabl
ishm
ent)
-pro
toty
pefa
iled.
..
1958
Firs
tInt
egra
ted
Cir
cuit
Jack
Kilb
y(T
exas
Inst
rum
ents
)-C
o-in
vent
or
1959
Firs
tPla
nar
Inte
grat
edC
ircu
itR
ober
tNoy
ce(F
airc
hild
)-C
o-in
vent
or
1961
Firs
tCom
mer
cial
ICs
Sim
ple
logi
cfu
ncti
ons
from
TIan
dFa
irch
ild
1965
Moo
re’s
Law
Gor
don
Moo
re(F
airc
hild
)obs
erve
sth
etr
ends
inin
tegr
atio
n.
1004
His
tory
Moo
re’s
Law
Pred
icts
expo
nent
ialg
row
thin
the
num
ber
ofco
mpo
nent
spe
rch
ip.
1965
-197
5D
oubl
ing
Ever
yYe
arIn
1965
Gor
don
Moo
reob
serv
edth
atth
enu
mbe
rof
com
pone
nts
per
chip
had
doub
led
ever
yye
arsi
nce
1959
and
pred
icte
dth
atth
etr
end
wou
ldco
ntin
ueth
roug
hto
1975
.
Moo
rede
scri
bes
his
init
ialg
row
thpr
edic
tion
sas
”rid
icul
ousl
ypr
ecis
e”.
1975
-201
?D
oubl
ing
Ever
yTw
oYe
ars
In19
75M
oore
revi
sed
grow
thpr
edic
tion
sto
doub
ling
ever
ytw
oye
ars.
Gro
wth
wou
ldno
wde
pend
only
onpr
oces
sim
prov
emen
tsra
ther
than
onm
ore
effic
ient
pack
ing
ofco
mpo
nent
s.
In20
00he
pred
icte
dth
atth
egr
owth
wou
ldco
ntin
ueat
the
sam
era
tefo
ran
-ot
her
10-1
5ye
ars
befo
resl
owin
gdu
eto
phys
ical
limit
s.
1005
His
tory
Moo
re’s
Law
atIn
tel1
100,0
00
10,0
00
386
Pentium
III
486 D
X
8008
4004
8080
Pentium
4
Pentium
Pentium
II
1,0
00
10,0
00,0
00
100,0
00,0
00
1,0
00,0
00 1
970
1980
1990
2000
1,0
00,0
00,0
00
8086
286
Itantium
Itantium
2
2010
Dual C
ore
Ita
ntium
2
10,0
00,0
00,0
00
10−
core
Xeon
Westfie
ld−
Ex
18−
core
Xeon E
5 v
3
72−
core
Xeon P
hi
1 Inte
lwas
foun
ded
byG
ordo
nM
oore
and
Rob
ertN
oyce
from
Fair
child
1006
His
tory
Moo
re’s
Law
;a
Self
-ful
fillin
gPr
ophe
syTh
ew
hole
indu
stry
uses
the
Moo
re’s
Law
curv
eto
plan
new
fabr
icat
ion
faci
litie
s.
Slow
er-w
aste
din
vest
men
t
Mus
tkee
pup
wit
hth
eJo
nese
s2 .
Fast
er-t
ooco
stly
Cos
tofc
apit
aleq
uipm
entt
obu
ildIC
sdo
uble
sap
prox
imat
ely
ev-
ery
4ye
ars.
Moo
re’s
law
isno
tdea
d(a
tlea
stno
tqui
te),
alth
ough
ther
ear
ew
orri
esth
atbe
low
20nm
,cl
ever
proc
essi
ngre
quir
edfo
rsm
alle
rtr
ansi
stor
sm
eans
that
cost
per
tran
sist
oris
goin
gup
rath
erth
ando
wn.
How
will
you
futu
reen
gine
ers
incr
ease
the
num
ber
oftr
ansi
stor
s?
2 orth
eIn
tels
1007
1947
1961
Poin
t C
onta
ct tr
ansis
tor
Fairchild
Bip
ola
r R
TL R
S F
lip−
Flo
p
(4 T
ran
sis
tors
)
Se
lf−
fulfillin
g
Pro
ph
ecy
Moore
’s L
aw
(1965)
Moore
’s L
aw
(1975)
Nu
mb
er
of
tra
nsis
tor
ha
s d
ou
ble
d e
ve
ry y
ea
r a
nd
will co
ntin
ue
to
do
so
un
til 1
97
5
Nu
mb
er
of
tra
nsis
tors
will
do
ub
le e
ve
ry t
wo
ye
ars
Sourc
e: B
ell
Labs
Sourc
e: F
airchild
10
0,0
00
10
,00
0
38
6
Pe
ntiu
m I
II
48
6 D
X
80
08
40
04
80
80
Pe
ntiu
m 4
Pe
ntiu
m
Pe
ntiu
m I
I
1,0
00
10
,00
0,0
00
10
0,0
00
,00
0
1,0
00
,00
0 19
70
19
80
19
90
20
00
1,0
00
,00
0,0
00
80
86
28
6
Ita
ntiu
m
Ita
ntiu
m 2
20
10
Du
al C
ore
Ita
ntiu
m 2
10
,00
0,0
00
,00
0
10
−co
re X
eo
nW
estf
ield
−E
x
18
−co
re X
eo
n E
5 v
3
72
−co
reX
eo
n P
hi
1000
Ove
rvie
wof
Tech
nolo
gies
Com
pone
nts
for
Logi
cD
iode
PN
Bipo
lar
Tran
sist
ors
N P
P
N
N P
MO
STr
ansi
stor
s
SUB
SD
G
Enhancem
ent
Deple
tion
N−
Channel
P−
Channel
G
SUB
NN
SD
P
Sili
co
n O
xid
e In
su
lato
r
Fie
ld in
du
ce
d N
−ch
an
ne
l
2001
Ove
rvie
wof
Tech
nolo
gies
RTL
Inve
rter
and
NO
Rga
te
BAZ
ZA
A
Z
VCC
CC
V
Z
AB
2002
Ove
rvie
wof
Tech
nolo
gies
All
func
tion
sca
nbe
real
ized
usin
gon
lyth
eN
OR
gate
s1av
aila
ble
inth
eR
TLlo
gic
fam
ily.2
1 Not
eth
atan
inve
rter
isa
spec
ialc
ase
ofa
NO
Rga
tew
ith
only
one
inpu
t.2 N
AN
Dga
tes
coul
dbe
used
inst
ead
for
logi
cfa
mili
esw
hich
supp
orto
nly
NA
ND
gate
s.
2003
Ove
rvie
wof
Tech
nolo
gies
Oth
erBi
pola
rTe
chno
logi
es
BAZ Z
ZBA
CC
V
BA
Z
CC
V
EE
V
Z
AB
Z
TT
L N
AN
D G
ate
EC
L O
R/N
OR
Gate
•TT
Lgi
ves
fast
ersw
itch
ing
than
RTL
atth
eex
pens
eof
grea
ter
com
plex
ity3 .T
hech
arac
teri
stic
mul
ti-e
mit
ter
tran
sist
orre
duce
sth
eov
eral
lcom
pone
ntco
unt.
•EC
Lis
ave
ryhi
ghsp
eed,
high
pow
er,n
on-s
atur
atin
gte
chno
logy
.
3 Mos
tTT
Lfa
mili
esar
em
ore
com
plex
than
the
basi
cve
rsio
nsh
own
here
2004
Ove
rvie
wof
Tech
nolo
gies
NM
OS
-aV
LSIt
echn
olog
y.
A BZ
VDD
VDD
A BZ
ZZ
AB
A B
•C
ircu
itfu
ncti
onde
term
ined
byse
ries
/par
alle
lcom
bina
tion
ofde
vice
s.
•D
eple
tion
tran
sist
orac
tsas
non-
linea
rlo
adre
sist
or.
Res
ista
nce
incr
ease
sas
the
enha
ncem
entd
evic
etu
rns
on,t
hus
redu
cing
pow
erco
nsum
ptio
n.
•Th
elo
wou
tput
volt
age
isde
term
ined
byth
esi
zera
tio
ofth
ede
vice
s.
2005
Ove
rvie
wof
Tech
nolo
gies
Alt
erna
tive
tran
sist
ors
repr
esen
tati
ons
for
NM
OS
circ
uits
VDD
Z
A B
VDD
Z
A B
VDD
Z
A B
VDD
Z
A B
VDD
Z
A B
Depletion
N−Channel
N−Channel
Enhancement
Var
ious
shor
than
dsar
eus
edfo
rsi
mpl
ifyi
ngN
MO
Sci
rcui
tdia
gram
s.
•Su
bstr
ate
conn
ecti
ons
need
notb
edr
awn
sinc
eal
lmus
tcon
nect
toG
nd.
•Si
nce
sour
cean
ddr
ain
are
indi
stin
guis
habl
ein
the
layo
ut,t
here
isno
need
tosh
owth
eso
urce
onth
eci
rcui
tdia
gram
.
Not
eth
atsc
hem
atic
tool
sno
tde
sign
edfo
rIC
desi
gnw
illus
ually
incl
ude
inap
prop
riat
e3-
term
inal
sym
bols
.
2006
Ove
rvie
wof
Tech
nolo
gies
CM
OS
logi
cC
MO
S-s
tate
ofth
ear
tVLS
I.
ZA
VDD
AZ
DD
V
•A
nac
tive
PMO
Sde
vice
com
plem
ents
the
NM
OS
devi
cegi
ving
:
–ra
ilto
rail
outp
utsw
ing.
–ne
glig
ible
stat
icpo
wer
cons
umpt
ion.
2007
Dig
ital
CM
OS
Cir
cuit
s
Alt
erna
tive
tran
sist
orre
pres
enta
tion
sfo
rC
MO
Sci
rcui
ts
P−Channel
Enhancement
N−Channel
Enhancement
VDD
Dig
ital
CM
OS
circ
uits
4te
ndto
use
sim
plifi
edsy
mbo
lslik
eth
eir
NM
OS
coun
ter-
part
s.
•In
gene
ral
subs
trat
eco
nnec
tion
sar
eno
tdr
awn
whe
reth
eyco
nnec
tto
Vdd
(PM
OS)
and
Gnd
(NM
OS)
.
•A
llC
MO
Sde
vice
sar
een
hanc
emen
tmod
e.
•Tr
ansi
stor
sac
tas
sim
ple
digi
tally
cont
rolle
dsw
itch
es.
4 inan
alog
CM
OS
circ
uits
we
may
have
wel
lsno
tcon
nect
edto
Vdd
/GN
D
2008
Dig
ital
CM
OS
Cir
cuit
s
Stat
icC
MO
Sco
mpl
emen
tary
gate
s
CBA
ZBA
Z
CBA
Z
•Fo
ran
yse
tofi
nput
sth
ere
will
exis
teit
her
apa
thto
Vdd
ora
path
toG
nd.
2009
Dig
ital
CM
OS
Cir
cuit
s
Com
poun
dG
ates
Z
A B CZ
A B C D E F
•A
llco
mpo
und
gate
sar
ein
vert
ing.
•R
ealis
able
func
tion
sar
ear
bitr
ary
AN
D/O
Rex
pres
sion
sw
ith
inve
rted
outp
ut.
2010
Dig
ital
CM
OS
Cir
cuit
s
Com
poun
dG
ate
Exam
ple
VD
D
GN
D
Z
A B C D
Sym
bo
l
,,
,
Pu
ll D
ow
n N
etw
ork,
,,
Pu
ll U
p N
etw
ork
2011
EE
V
VD
DV
DD
ZBA
CC
V
BA
Z
CC
V
Z
AB
A B CZ
A B CZ
BAZ
RT
L N
OR
Gate
TT
L N
AN
D G
ate
CM
OS
Com
pund G
ate
NM
OS
Com
pund G
ate
EC
L O
R/N
OR
Gate
AB
ZZA Z
Z
B
CC
V
•Bi
pola
rTr
ansi
tors
wit
hR
esis
tors
-MSI
/LSI
RTL
-NO
RTT
L-N
AN
DEC
L-O
R/N
OR
•M
OS
Tran
sist
ors
(no
resi
stor
s)-V
LSI
NM
OS
CM
OS
-No
stat
icpo
wer
!
Both
allo
wco
nstr
uctio
nof
NO
R,N
AN
D&
Com
poun
dga
te(a
lway
sin
vert
ing)
2000
Com
pone
nts
for
ICD
esig
n
Dio
des
and
Bipo
lar
Tran
sist
ors
Dio
de
PN
PN N
P
•Id
eals
truc
ture
-1D
•R
eals
truc
ture
-3D
•D
epth
cont
rolle
dim
plan
ts.
3001
Com
pone
nts
for
ICD
esig
n
Dio
des
and
Bipo
lar
Tran
sist
ors
NPN
Tran
sist
or
NN
P
EB
C
EB
C
NP
N
PN
N
•Tw
on-
type
impl
ants
.
3002
Com
pone
nts
for
ICD
esig
n
MO
STr
ansi
stor
s
Sim
ple
NM
OS
Tran
sist
or
NN
PG
SUB
DS
SUB
SD
GD
S
G
NN
SUB
Thic
k O
xid
e
Thin
Oxid
eP
oly
sili
con
P−
substr
ate
G
SD
Active A
rea M
ask
Poly
sili
con M
ask
3003
Com
pone
nts
for
ICD
esig
n
Sim
ple
NM
OS
Tran
sist
or
•A
ctiv
eA
rea
mas
kde
fines
exte
ntof
Thic
kO
xide
.
•Po
lysi
licon
mas
kal
soco
ntro
lsex
tent
ofTh
inO
xide
(alia
sG
ate
Oxi
de).
•N
-typ
eim
plan
thas
noex
tra
mas
k.
–It
isbl
ocke
dby
thic
kox
ide
and
bypo
lysi
licon
.
–Th
eim
plan
tis
Self
Alig
ned.
•Su
bstr
ate
conn
ecti
onis
tobo
ttom
ofw
afer
.
–A
llsu
bstr
ates
togr
ound
.
•G
ate
conn
ecti
onno
tabo
vetr
ansi
stor
area
.
–D
esig
nR
ule.
3004
Inte
rcon
nect
N
Me
tal 2
La
ye
r
Me
tal 1
La
ye
r
Co
nta
ct
Via
Via
1 M
ask
Co
nta
ct
Win
do
w M
ask
Po
lycry
sta
line
Sili
co
n (
Po
lysili
co
n/P
oly
)D
iffu
sio
n (
co
ntr
olle
d b
y A
ctive
Are
a M
ask)
Me
tal 1
Me
tal 2
Co
nd
ucto
rs:
•C
ross
ing
cond
ucto
rson
diff
eren
tmas
ksdo
noti
nter
act1 .
-Exp
licit
cont
act/
via
isre
quir
edfo
rco
nnec
tion
.
•C
ross
ing
cond
ucto
rson
the
sam
em
ask
are
alw
ays
conn
ecte
d.
1 the
exce
ptio
nto
this
rule
isth
atpo
lysi
licon
cros
sing
diff
usio
ngi
ves
usa
tran
sist
or
3005
Inte
rcon
nect
Res
ista
nce
wt
l
R=( ρ t)(
l w
)
whe
reρ
isth
ere
sist
ivit
yco
nsta
nt3.
2×
10−8Ωm
for
alum
iniu
m1.
7×
10−8Ωm
for
copp
er
Sinc
et
andρ
are
fixed
for
apa
ricu
lar
mas
kla
yer,
the
valu
eth
atis
norm
ally
used
isth
esh
eetr
esis
tanc
e:Rs
=( ρ t
) .
w
l
R=Rs
(l w
)
whe
reRs
issh
eetr
esis
tanc
e0.
1Ω/
for
170nm
thic
kco
pper
Rs
=re
sist
ance
ofa
squa
re(i.
e.w
=l)
soth
eun
itsfo
rRs
are
Ω/
(ohm
spe
rsq
uare
).
3006
Com
pone
nts
for
ICD
esig
n
Res
isto
rs
3
1 2
45 6
7 812
34
56
78
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
12
34
10
98
76
5R
= 1
assum
ing R
s =
0.1
ohm
s p
er
square
assum
ing R
s =
200 o
hm
s p
er
square
Exam
ple
s for
Meta
lE
xam
ple
for
Poly
sili
con
R =
R =
R =
•fo
rla
rger
resi
stan
ces
we
need
min
imum
wid
thpo
ly(o
ften
com
bine
dw
ith
ase
rpan
tine
shap
e)to
save
onar
ea
•co
rner
squa
res
coun
tas
half
2sq
uare
s
•fo
rpr
edic
atab
ility
and
mat
chin
gw
em
ayne
edw
ider
trac
ksw
itho
utco
rner
s
2 effe
ctiv
ere
sist
ance
≈0.56R
s
3007
Com
pone
nts
for
ICD
esig
n
Cap
acit
ors
me
tal−
insu
lato
r−m
eta
l ca
pa
cito
rp
oly
−in
su
lato
r−p
oly
ca
pa
cito
r
(sp
ecia
list
an
alo
g p
roce
ss w
ith
2 p
oly
la
ye
rs)
pa
ralle
l tr
acks o
ve
r u
nd
erlyin
g c
on
du
cto
r
(e.g
. b
ulk
sili
co
n)
frin
ge
ca
pa
cito
rB A
A
B
AB
l
ws
•C
apac
itan
ceto
unde
rlyi
ngco
nduc
torC
=Cawl
+2Cfl
•C
oupl
ing
capa
cita
nce
toad
jace
nttr
ackC
=Ccl/s
whe
reCa,C
f,C
car
eco
nsta
nts
for
agi
ven
laye
ran
dpr
oces
s
indi
gita
ldes
igns
our
only
aim
isto
min
imis
epa
rasi
tic
capa
cita
nce
3008
3
1 2
45 6
7 812
34
56
78
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
Dio
de
NP
N T
ransis
tor
NM
OS
Enhancem
ent tr
ansis
tor
NM
OS
Pro
cess
Resis
tor
Capacitors
PNN
PE
BC
NN
P
EB
C
SD
G
SD
SUB
PN
N
B AAB
3000
CM
OS
NM
OS
Tran
sist
or–
wit
hto
psu
bstr
ate
conn
ecti
on
SUB
SD
GD
S
G
SUB
NN
P+
++
P w
ell
N+
im
pla
nt
ma
sk
P+
im
pla
nt
ma
sk
P w
ell
ma
sk
SD
G
SUB
4001
CM
OS
NM
OS
Tran
sist
or–
wit
hto
psu
bstr
ate
conn
ecti
on
Whe
reit
isno
tsu
itab
lefo
rsu
bstr
ate
conn
ecti
ons
tobe
shar
ed,
am
ore
com
plex
proc
ess
isus
ed.
•Fi
vem
asks
mus
tbe
used
tode
fine
the
tran
sist
or:
–P
Wel
l
–A
ctiv
eA
rea
–Po
lysi
licon
–N
+im
plan
t
–P+
impl
ant
•P
Wel
l,fo
ris
olat
ion.
•To
psu
bstr
ate
conn
ecti
on.
•P+
/N+
impl
ants
prod
uce
good
ohm
icco
ntac
ts.
4002
CM
OS
CM
OS
Inve
rter
N−
we
ll
Active
Are
a
N
imp
lan
t
P
imp
lan
t
Po
lysili
co
n
Co
nta
ct
Win
do
w
Me
tal
N
N P
N NP P P
4003
CM
OS
CM
OS
Inve
rter
•Th
epr
oces
sde
scri
bed
here
isan
NW
ellp
roce
sssi
nce
itha
son
lyan
NW
ell.
PW
ella
ndTw
inTu
bpr
oces
ses
also
exis
t.
•N
ote
that
the
P-N
junc
tion
betw
een
chip
subs
trat
ean
dN
Wel
lwill
rem
ain
re-
vers
ebi
ased
.
Thus
the
tran
sist
ors
rem
ain
isol
ated
.
•N
impl
antd
efine
sN
MO
Sso
urce
/dra
inan
dPM
OS
subs
trat
eco
ntac
t.
•P
impl
antd
efine
sPM
OS
sour
ce/d
rain
and
NM
OS
subs
trat
eco
ntac
t.
4004
Proc
essi
ng–
Phot
olit
hogr
aphy
SiO
2
(po
sitiv
e)
Ph
oto
resis
t
Ox
ide
Gro
wth
Ph
oto
res
ist
De
po
sit
ion
Sil
ico
n W
afe
r
Co
nta
ct/
Pro
xim
ity
Ma
sk
Ma
sk P
att
ern
Gla
ss M
ask
Ph
oto
res
ist
Str
ip
Ox
ide
Etc
h
Ph
oto
res
ist
De
ve
lop
me
nt
Ph
oto
res
ist
Ex
po
su
re
UV
Lig
ht
(ch
rom
e)
4005
Proc
essi
ng–
Mas
kM
akin
g
Pa
tte
rn r
ep
rod
uc
ed
on
wa
fer
(or
co
nta
ct/
pro
xim
ity
ma
sk
)
by
ste
p a
nd
re
pe
at
wit
h o
pti
ca
l re
du
cti
on
ele
ctr
on
be
am
Re
tic
le w
ritt
en
by
sc
an
nin
g
Re
ticle
Ma
sk
Le
ns
UV
Lig
ht
•O
ptic
alre
duct
ion
allo
ws
narr
ower
line
wid
ths.
4006
PN
PN
NP
PN
PN
PN
NP
PN
NP
NP
NP
N im
pla
nt
P im
pla
nt
N−
well
Active A
rea
Poly
sili
con
Conta
ct W
indow
Meta
l
defines T
hic
k O
xid
e
defines T
hin
Oxid
e
PN
PN
PN
NP
PN
PP
P
defines T
hic
k O
xid
e
defines T
hin
Oxid
e
alig
ned to A
A a
nd P
oly
alig
ned to A
A a
nd P
oly
4007
CM
OS
In
ve
rte
r
CM
OS
In
ve
rte
r
CM
OS
In
ve
rte
r
Fea
ture
s m
ay b
e d
eter
min
ed b
y a
nu
mb
er o
f m
ask
se.
g.
NM
OS
so
urc
e d
rain
: A
ctiv
eAre
a A
ND
NO
T(N
Wel
l O
R P
oly
OR
PIm
pla
nt)
N−
Wel
l C
MO
S P
roce
sss
(wit
ho
ut
exp
lici
t N
+ i
mp
lan
t m
ask
)
N−
Wel
l C
MO
S P
roce
sss
(wit
h e
xp
lici
t N
+ i
mp
lan
t m
ask
)
Tw
in T
ub
CM
OS
Pro
cess
PM
OS
En
ha
nce
me
nt
tra
nsis
tor
CM
OS
Pro
cess
N W
ell
Active
Are
a
Po
lysili
co
n
P+
Im
pla
nt
N+
Im
pla
ntm
any
ste
ps
for
a si
ng
le m
ask
PN
NP
PN
PN
I
PN
NP
PN
NP
PN
NP
PN
NP
UV
Lig
ht
PP
++
+N
N w
ell
PP
++
N w
ell
N w
ell
N w
ell
N w
ell
N w
ell
P type s
ilicon w
afe
r
P P P P P P P P P
4000
Des
ign
Rul
es
Topr
even
tchi
pfa
ilure
,des
igns
mus
tcon
form
tode
sign
rule
s:
•Si
ngle
laye
rru
les
•M
ulti
-lay
erru
les
5001
Der
ivat
ion
ofD
esig
nR
ules
N
NN
La
tera
l D
iffu
sio
n
Iso
tro
pic
Etc
hin
g
is a
lign
ed
to
is a
lign
ed
to
Op
tic
al
Fo
cu
s o
ve
r 3
D t
err
ain
Re
ticle
Ma
sk
Mis
ali
gn
me
nt
ca
n b
e C
um
ula
tiv
e
NN
Ma
sk
Mis
ali
gn
me
nt 50
02
Des
ign
Rul
es
0.5µm
CM
OS
inve
rter
Active
Are
a
Me
tal
Co
nta
ct
Win
do
w
Po
lysili
co
n
= N
OT
N
im
pla
nt
P im
pla
nt
N−
we
ll
5003
Abs
trac
tion
Leve
lsof
Abs
trac
tion
•M
ask
Leve
lDes
ign
–La
bori
ous
Tech
nolo
gy/P
roce
ssde
pend
ent.
–D
esig
nru
les
may
chan
gedu
ring
ade
sign
!
•Tr
ansi
stor
Leve
lDes
ign
–Pr
oces
sin
depe
nden
t,Te
chno
logy
depe
nden
t.
•G
ate
Leve
lDes
ign
–Pr
oces
s/Te
chno
logy
inde
pend
ent. 50
04
Abs
trac
tion
-Sti
ckD
iagr
ams
Stic
kdi
agra
ms
give
usm
any
ofth
ebe
nefit
sof
abst
ract
ion:
•M
uch
easi
er/f
aste
rth
anfu
llm
ask
spec
ifica
tion
.
•Pr
oces
sin
depe
nden
t(va
lidfo
ran
yC
MO
Spr
oces
s).
•Ea
syto
chan
ge.
whi
leav
oidi
ngso
me
ofth
epr
oble
ms:
•O
ptim
ized
layo
utm
aybe
gene
rate
dm
uch
mor
eea
sily
from
ast
ick
diag
ram
than
from
tran
sist
oror
gate
leve
ldes
igns
.1
1 note
that
allI
Cde
sign
sm
uste
ndat
the
mas
kle
vel.
5005
Dig
ital
CM
OS
Des
ign St
ick
Dia
gram
s
& t
ap
Co
mb
ine
d c
on
tact
Co
nta
ct
P+
N+
Po
lysili
co
n
Me
tal
Ta
p
5006
Dig
ital
CM
OS
Des
ign St
ick
Dia
gram
s
5007
Dig
ital
CM
OS
Des
ign St
ick
Dia
gram
s
•Ex
plor
eyo
urD
esig
nSp
ace.
–Im
plic
atio
nsof
cros
sove
rs.
–N
umbe
rof
cont
acts
.
–A
rran
gem
ento
fdev
ices
and
conn
ecti
ons.
•Pr
oces
sin
depe
nden
tlay
out.
•Ea
syto
expa
ndto
afu
llla
yout
for
apa
rtic
ular
proc
ess.
5008
Stic
ksan
dC
AD
-Sym
bolic
Cap
ture
W=1.1
L=0.5
L=0.5
W=2.2
•Tr
ansi
stor
sar
epl
aced
and
expl
icit
lysi
zed.
-com
pone
nts
are
join
edw
ith
zero
wid
thw
ires
.-c
onta
cts
are
auto
mat
ical
lyse
lect
edas
requ
ired
.
•A
sem
i-au
tom
atic
com
pact
ion
proc
ess
will
crea
teD
RC
corr
ectl
ayou
t.
5009
Stic
ksan
dC
AD
-Mag
ic
•Lo
gst
yle
desi
gn(s
tick
sw
ith
wid
th)-
DR
Cer
rors
are
flagg
edim
med
iate
ly.
-aga
inco
ntac
tsar
eau
tom
atic
ally
sele
cted
asre
quir
ed.
•O
n-lin
eD
RC
lead
sto
rapi
dge
nera
tion
ofco
rrec
tdes
igns
.-s
ymbo
licca
ptur
est
yle
com
pact
ion
isav
aila
ble
ifde
sire
d.
5010
Op
tim
ise
d M
ask L
ayo
ut
Eq
uiv
ale
nt
Stick D
iag
ram
De
sig
n R
ule
s −
wid
th,
se
pa
ratio
n,
ove
rla
p
& t
ap
Co
mb
ine
d c
on
tact
Co
nta
ct
P+
N+
Po
lysili
co
nM
eta
l
Ta
p
5000
Dig
ital
CM
OS
Des
ign
Alo
gica
lapp
roac
hto
gate
layo
ut.
•A
llco
mpl
emen
tary
gate
sm
aybe
desi
gned
usin
ga
sing
lero
wof
n-tr
ansi
stor
sab
ove
orbe
low
asi
ngle
row
ofp-
tran
sist
ors,
alig
ned
atco
mm
onga
teco
nnec
tions
.
6001
Dig
ital
CM
OS
Des
ign
Eule
rPa
th
•Fo
rth
em
ajor
ity
ofth
ese
gate
sw
eca
nfin
dan
arra
ngem
ento
ftra
nsis
tors
such
that
we
can
butt
adjo
inin
gtr
ansi
stor
s.
–C
aref
ulse
lect
ion
oftr
ansi
stor
orde
ring
.
–C
aref
ulor
ient
atio
nof
tran
sist
orso
urce
and
drai
n.
•R
efer
red
toas
line
ofdi
ffusi
on.
6002
Dig
ital
CM
OS
Des
ign
Find
ing
anEu
ler
Path
Com
pute
rA
lgor
ithm
s
•It
isre
lati
vely
easy
for
aco
mpu
ter
toco
nsid
eral
lpo
ssib
lear
rang
emen
tsof
tran
sist
ors
inse
arch
ofa
suit
able
Eule
rpa
th.
This
isno
tso
easy
for
the
hum
ande
sign
er.
One
Hum
anA
lgor
ithm
•Fi
nda
path
whi
chpa
sses
thro
ugh
alln
-tra
nsis
tors
exac
tly
once
.
•Ex
pres
sth
epa
thin
term
sof
the
gate
conn
ecti
ons.
•Is
itpo
ssib
leto
follo
wa
sim
ilarl
yla
belle
dpa
thth
roug
hth
ep-
tran
sist
ors?
–Ye
s–
you’
vesu
ccee
ded.
–N
o–
try
agai
n(y
oum
aylik
eto
try
ap
path
first
this
tim
e).
6003
Dig
ital
CM
OS
Des
ign
Find
ing
anEu
ler
Path
Z
A C B
Her
eth
ere
are
four
poss
ible
Eule
rpa
ths. 60
04
Dig
ital
CM
OS
Des
ign
Find
ing
anEu
ler
Path
6005
Dig
ital
CM
OS
Des
ign
Eule
rPa
thEx
ampl
e
12
34
5
12
34
5
1.Fi
ndEu
ler
path
3.R
oute
pow
erno
des
5.R
oute
rem
aini
ngno
des
2.La
belp
oly
colu
mns
4.R
oute
outp
utno
de6.
Add
taps
1fo
rPM
OS
and
NM
OS
Aco
mbi
ned
cont
acta
ndta
p,,m
aybe
used
only
whe
rea
pow
erco
ntac
texi
sts
atth
een
dof
alin
eof
diffu
sion
.Whe
reth
isis
nott
heca
sea
sim
ple
tap,
,sho
uld
beus
ed.
1 1ta
pis
good
for
abou
t6tr
ansi
stor
s–
insu
ffici
entt
aps
may
leav
ea
chip
vuln
erab
leto
latc
h-up
6006
Dig
ital
CM
OS
Des
ign
Find
ing
anEu
ler
Path
OD
D
OD
D
OD
D
OD
D
PD
N T
op
olg
y:
Z
A B C D E F
No
poss
ible
path
thro
ugh
n-tr
ansi
stor
s!
6007
Dig
ital
CM
OS
Des
ign
Find
ing
anEu
ler
Path
6008
Dig
ital
CM
OS
Des
ign
Find
ing
anEu
ler
Path E
VE
N
EV
EN
OD
DO
DD
OD
D
PU
N T
op
olg
y:
Z
A D E B F G C H I
•N
opo
ssib
lepa
thth
roug
hp-
tran
sist
ors.
•N
ore
-arr
ange
men
twill
crea
tea
solu
tion
!
6009
Dig
ital
CM
OS
Des
ign
Philo
soph
ers
vs.E
ngin
eers
Z
A D E B F G C H I
•Th
eph
iloso
pher
isha
ppy
topr
ove
that
ther
eis
noEu
ler
path
tobe
foun
d.
•Th
een
gine
erw
illus
epa
rtia
lEul
erpa
ths
tore
ach
the
best
solu
tion
.
6010
Inve
stig
atio
n o
f E
ule
r p
ath
s le
ad
s t
o m
ore
eff
icie
nt
layo
ut*
*not all
gate
s w
ill s
upport
a c
om
mon E
ule
r path
for
both
PM
OS
and N
MO
S
EV
EN
EV
EN
EV
EN
OD
D
OD
D
OD
D
OD
D
OD
D
EV
EN
EV
EN
OD
D
OD
D
OD
D 12
45
67
3
12
45
67
3
12
45
67
3
12
45
67
3
12
45
67
3
12
45
67
3
51 2 3
6
7
6
57 4
2
13
4
6000
Dig
ital
CM
OS
Des
ign M
ulti
ple
gate
s
SA
BY
SA
BY
A B
S
Y1 0
A BY
S
7001
Dig
ital
CM
OS
Des
ign M
ulti
ple
gate
s
•G
ates
shou
ldal
lbe
ofsa
me
heig
ht.
–Po
wer
and
grou
ndra
ilsw
illth
enlin
eup
whe
nbu
tted
.
•A
llga
tein
puts
and
outp
uts
are
avai
labl
eat
top
and
bott
om.
–A
llro
utin
gis
exte
rnal
toce
lls.
–Pr
eser
ves
the
bene
fits
ofhi
erar
chy.
•In
terc
onne
ctis
via
two
cond
ucto
rro
utin
g.–
Inth
isca
sePo
lysi
licon
vert
ical
lyan
dM
etal
hori
zont
ally
.
7002
Dig
ital
CM
OS
Des
ign Tw
o-la
yer
Met
al
LA
YE
R
1 M
ET
AL
2 M
ET
AL
LA
YE
RS
Mos
tmod
ern
VLS
Ipro
cess
essu
ppor
ttw
oor
mor
em
etal
laye
rs.
The
norm
isto
use
only
met
alfo
rin
ter-
cell
rout
ing.
usua
llyM
etal
1fo
rho
rizo
ntal
inte
r-ce
llro
utin
g(a
ndfo
rpo
wer
rails
)M
etal
2ve
rtic
al(a
ndfo
rce
llin
puts
and
outp
uts)
.
7003
Stan
dard
Cel
lDes
ign
Man
yIC
sar
ede
sign
edus
ing
the
stan
dard
cell
met
hod.
•C
ellL
ibra
ryC
reat
ion
Ace
lllib
rary
,con
tain
ing
com
mon
lyus
edlo
gic
gate
s1is
crea
ted
for
apr
oces
s.Th
isis
ofte
nca
rrie
dou
tby
oron
beha
lfof
the
foun
dry.
•A
SIC
2D
esig
nTh
eA
SIC
desi
gner
mus
tde
sign
aci
rcui
tus
ing
the
logi
cga
tes
avai
labl
ein
the
libra
ry.
The
ASI
Cde
sign
erus
ually
has
noac
cess
toth
efu
llla
yout
ofth
est
anda
rdce
llsan
ddo
esn’
tcre
ate
any
new
cells
for
the
libra
ry.
Layo
utw
ork
perf
orm
edby
the
ASI
Cde
sign
eris
divi
ded
into
two
stag
es:
–Pl
acem
ent
–R
outi
ng
1 note
that
ast
anda
rdce
llm
ayin
clud
etr
ansi
stor
sfr
omm
ore
than
one
basi
cfu
ncti
on(e
.g.N
AN
D+
inve
rter
togi
veA
ND
)but
will
norm
ally
bede
sign
edfla
ti.e
.wit
hout
layo
uthi
erar
chy.
2 App
licat
ion
Spec
ific
Inte
grat
edC
ircu
it
7004
Stan
dard
Cel
lDes
ign
Cho
osin
ga
seto
fcel
lsfo
ra
cell
libra
ry•
Ther
eis
nose
tsiz
efo
ra
cell
libra
ry.
•Th
eore
tica
llyju
ston
ece
ll(
)or
one
type
ofce
ll(
,,
,...)
issu
ffici
entf
ora
cell
libra
ry.
•Th
eus
eof
mor
eco
mpl
exce
llsal
low
sfo
rde
sign
sop
tim
ised
for
area
and/
orpe
rfor
man
ce:
A B
S
Y1 0
A BY
S
Multip
lexer
sta
ndard
cell
(sin
gle
ce
ll −
no
hie
rarc
hy)
SA
BY
•W
hich
basi
cga
tes;
whi
chco
mpo
und
gate
s;w
hich
sequ
enti
alga
tes?
•D
ow
epr
ovid
edi
ffer
entv
ersi
ons
ofth
esa
me
gate
(e.g
.sm
alla
rea
vers
ion,
high
driv
eve
rsio
n)?
Ifso
,how
man
ydi
ffer
entv
ersi
ons?
7005
Stan
dard
Cel
lDes
ign
Layo
utan
dA
bstr
actV
iew
sof
aSt
anda
rdC
ell
GND!
GND!
Vdd!
Vdd!
AB
Y YB
A
GND!
GND!
Vdd!
Vdd!
AB
Y YB
A
LAYOUT
ABSTRACT
The
part
ialc
elll
ayou
tusu
ally
give
nto
the
ASI
Cde
sign
eris
know
nas
abl
ack
box
orab
stra
ctvi
ew.T
heab
stra
ct:
•m
usti
nclu
dece
llpo
rts
and
ace
llbo
unda
ry
•m
ayin
clud
eso
me
oral
loft
hem
etal
mas
kin
form
atio
n
7006
Plac
emen
t&R
outi
ng
Plac
emen
t
Cel
lsar
epl
aced
inon
eor
seve
rale
qual
leng
thlin
esw
ith
inte
r-di
gita
ted
pow
eran
dgr
ound
rails
.
7007
Plac
emen
t&R
outi
ng
Rou
ting
Inth
ero
utin
gch
anne
lsbe
twee
nth
ece
llsw
ero
ute
met
al1
hori
zont
ally
and
met
al2
vert
ical
ly.
7008
Plac
emen
t&R
outi
ng
Two
cond
ucto
rro
utin
g
•C
ondu
ctor
Afo
rho
rizo
ntal
inte
r-ce
llro
utin
gC
ondu
ctor
Bve
rtic
al3
•Th
islo
gica
lapp
roac
hm
eans
that
we
shou
ldne
ver
have
tow
orry
abou
tsig
nals
cros
sing
.
This
mak
eslif
eco
nsid
erab
lyea
sier
for
aco
mpu
ter
(or
even
ahu
man
)to
com
-pl
ete
the
rout
ing.
•W
em
ust
only
ensu
reth
attw
osi
gnal
sw
illno
tm
eet
inth
esa
me
hori
zont
alor
vert
ical
chan
nel.
•C
ompu
ter
algo
rith
ms
can
beus
edto
ensu
repl
acem
ento
fcel
lssu
chth
atw
ires
are
shor
t.4
•Fu
rthe
rco
mpu
ter
algo
rith
ms
can
beus
edto
opti
miz
eth
ero
utin
git
self
.
3 Inth
etw
o-m
etal
exam
ple
Con
duct
orA
isM
etal
1an
dC
ondu
ctor
Bis
Met
al2
4 InV
LSIc
ircu
its
we
ofte
nfin
dth
atin
ter-
cell
wir
ing
occu
pies
mor
ear
eath
anth
ece
llsth
emse
lves
.
7009
Stan
dard
Cel
lDes
ign M
ore
Met
alLa
yers
Wit
hth
ree
orm
ore
met
alla
yers
itis
poss
ible
tota
kea
diff
eren
tapp
roac
h.Th
esi
mpl
este
xam
ple
uses
thre
em
etal
laye
rs.
•St
anda
rdC
ells
Use
only
met
al1
exce
ptfo
rI/
Ow
hich
isin
met
al2
•Tw
oC
ondu
ctor
Rou
ting
Use
sm
etal
2an
dm
etal
3
Vdd!
GND!
AB
YA
BY
Vdd!
GND!
AB
Y
LAYOUT
ABSTRACT
ROUTING
7010
Stan
dard
Cel
lDes
ign M
ore
Met
alLa
yers
Wit
hth
isap
proa
chw
eca
nro
ute
safe
lyov
erth
ece
llto
the
spec
ified
pins
lead
ing
tom
uch
smal
ler
gaps
betw
een
cell
row
s. 7011
Stan
dard
Cel
lDes
ign
Alt
erna
tive
Plac
emen
tSty
le
Vdd!
Vdd!
Vdd!
Vdd!
Vdd!
Vdd!
Vdd!
Vdd!
Vdd!
Vdd!
GND!
GND!
GND!
GND!
GND!
GND!
GND!
GND!
GND!
Vdd!
GND!
GND!
Vdd!
Vdd!
GND!
Vdd!
GND!
GND!
GND!
GND!
GND!
Vdd!
Vdd!
Vdd!
Vdd!
GND!
Byfli
ppin
gev
ery
seco
ndro
wit
may
bepo
ssib
leto
elim
inat
ega
psbe
twee
nro
ws.
N-w
ells
are
mer
ged
and
pow
eror
grou
ndra
ilsar
esh
ared
.Th
isap
proa
chis
norm
ally
asso
ciat
edw
ith
spar
sero
ws
and
non
chan
nel
base
dro
utin
gal
gori
thm
s.
7012
Vdd!
Vdd!
YB
AAB
Y
GN
D!
GN
D!
NA
ND
2
GN
D!
YB
A
Vdd!
Vdd!
GN
D!
YB
A
NA
ND
2
AB
Y
Vdd!
GN
D!
NA
ND
2
GN
D!
AB
Y
AB
YV
dd!
NA
ND
2
YG
ND
!B
A
YV
dd!
BA
NA
ND
2
AB
Y
Vdd!
GN
D!
NA
ND
2
GN
D!
AB
Y
AB
YV
dd!
NA
ND
2
YG
ND
!B
A
YV
dd!
BA
NA
ND
2
3 M
ET
AL
LA
YE
RS
2 M
ET
AL
LA
YE
RS
LA
YE
R
1 M
ET
AL
LA
YO
UT
AB
ST
RA
CT
RO
UT
ING
Vdd!
Vdd!
GN
D!
GN
D!
AB
Y
NA
ND
2
7000
Syst
emD
esig
nC
hoic
es
•Pr
ogra
mm
able
Logi
c
–PL
De.
g.La
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L22V
10,A
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1502
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Prog
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Xili
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Des
ign
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ask
Prog
ram
mab
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Arr
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g.EC
SC
MO
SG
ate
Arr
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telH
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IIst
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ured
ASI
Cs
–St
anda
rdC
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g.A
MS
CO
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35µm
cell
libra
ry
•Fu
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usto
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8001
Syst
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•Pr
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mm
able
Logi
cST
AR
TH
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–Be
stpo
ssib
lede
sign
turn
arou
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me
–C
heap
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orpr
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–Be
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me
tom
arke
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–M
inim
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quir
ed
•Se
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tom
Des
ign
•Fu
llC
usto
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–C
heap
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prod
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–H
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–M
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kill
requ
ired
1 opti
miz
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nlim
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bysp
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pow
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8002
Prog
ram
mab
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ICT
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22C
V10
Sour
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CT
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neti
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use
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epr
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mm
able
.
•R
epro
gram
mab
le-U
V/E
lect
rica
llyEr
asab
le.
8003
Fiel
dPr
ogra
mm
able
Gat
eA
rray
–X
ilinx
XC
4000
CL
B
Pro
gra
mm
ab
leIn
terc
on
ne
ctio
nP
oin
t
Vertical Routing Channel
Ho
rizo
nta
l R
ou
tin
g C
ha
nn
el
I/O Buffers
I/O
Bu
ffe
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I/O
Bu
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I/O Buffers
CL
B
CL
BC
LB
CL
B
Sw
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ing
Ma
trix
•C
onfig
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leLo
gic
Bloc
ks(C
LBs)
&I/
OBl
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2
•Pr
ogra
mm
able
Inte
rcon
nect
2 Xili
nxX
C40
13ha
s57
6(2
4×
24)C
LBs
and
upto
192
(4×
48)u
ser
I/O
pins
.
8004
Fiel
dPr
ogra
mm
able
Gat
eA
rray
–X
ilinx
XC
4000
CLB
R
XC40
00E
and
XC40
00X
Serie
s Fi
eld
Prog
ram
mab
le G
ate
Arr
ays
6-10
May
14,
199
9 (V
ersi
on 1
.6)
Flip
-Flo
psTh
eC
LBca
npa
ssth
eco
mbi
nato
rialo
utpu
t(s)t
oth
ein
ter-
conn
ect
netw
ork,
but
can
also
stor
eth
eco
mbi
nato
rial
resu
ltsor
othe
rinc
omin
gda
tain
one
ortw
ofli
p-flo
ps,a
ndco
nnec
t the
ir ou
tput
s to
the
inte
rcon
nect
net
work
as
well.
The
two
edge
-trig
gere
dD
-type
flip-
flops
have
com
mon
cloc
k(K
)and
cloc
ken
able
(EC
)inp
uts.
Eith
eror
both
cloc
kin
puts
can
also
bepe
rman
ently
enab
led.
Stor
age
elem
ent
func
tiona
lity
is d
escr
ibed
inTa
ble
2.
Latc
hes
(XC4
000X
onl
y)Th
eC
LBst
orag
eel
emen
tsca
nal
sobe
confi
gure
das
latc
hes.
The
two
latc
hes
have
com
mon
cloc
k(K
)and
cloc
ken
able
(EC
)in
puts
.St
orag
eel
emen
tfu
nctio
nalit
yis
desc
ribed
inTa
ble
2.
Cloc
k In
put
Each
flip-
flop
can
betri
gger
edon
eith
erth
eris
ing
orfa
lling
cloc
ked
ge.T
hecl
ock
pin
issh
ared
bybo
thst
orag
eel
e-m
ents
.How
ever
,the
cloc
kis
indi
vidu
ally
inve
rtibl
efo
reac
hst
orag
eel
emen
t.An
yin
verte
rpla
ced
onth
ecl
ock
inpu
tis
auto
mat
ical
ly a
bsor
bed
into
the
CLB
.
Cloc
k En
able
The
cloc
ken
able
sign
al(E
C)i
sac
tive
Hig
h.Th
eEC
pin
issh
ared
bybo
thst
orag
eel
emen
ts.I
flef
tunc
onne
cted
for
eith
er,t
hecl
ock
enab
lefo
rtha
tsto
rage
elem
entd
efau
ltsto
the
activ
e st
ate.
EC
is n
ot in
verti
ble
with
in th
e C
LB.
LOG
IC
FUN
CTI
ON
O
F G
1-G
4
G4
G3
G2
G1
G'
LOG
IC
FUN
CTI
ON
O
F F1
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F 4 F 3 F 2 F 1
F'
LOG
IC
FUN
CTI
ON
O
F F'
, G',
AND
H
1
H'
DIN
F'
G
' H
' DIN
F'
G
' H
'
G'
H'
H'
F'
S/R
C
ON
TRO
L
D ECR
D
Bypa
ss
Bypa
ss
SDYQ XQ
Q
S/R
C
ON
TRO
L
D ECR
D
SDQ
11
K (CLO
CK)
Mul
tiple
xer C
ontro
lled
by C
onfig
urat
ion
Prog
ram
Y X
DIN
/H2
H1
SR
/H0
EC
X669
2
C1
• • •
C4
4
Figu
re 1
: S
impl
ified
Blo
ck D
iagr
am o
f XC
4000
Ser
ies
CLB
(RA
M a
nd C
arry
Log
ic fu
nctio
ns n
ot s
how
n)
Tabl
e 2:
CLB
Sto
rage
Ele
men
t Fun
ctio
nalit
y(a
ctiv
e ris
ing
edge
is s
how
n)
Mod
e K
EC
SR
D
QPo
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orG
SRX
XX
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Flip
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pX
X1
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__/
1*0*
DD
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0*X
Q
Latc
h1
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XQ
01*
0*D
DBo
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XQ
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Don
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Prod
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Slic
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Fig
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2-3:
Dia
gram
of S
LIC
EM
A6:
A1
D
CO
UT
D
DX C
CX B
BX A
AX
O6
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D DQ
C CQ
CM
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A AQ
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Res
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D
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LO
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O6
O5
C6:
1
CX
D6:
1 DI
A6:
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O6
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B6:
1
BX
A6:
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W6:
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W6:
W1
W6:
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W6:
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O6
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CE
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Art
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–SL
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474
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014
Slic
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Fig
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2-3:
Dia
gram
of S
LIC
EM
A6:
A1
D
CO
UT
D
DX C
CX B
BX A
AX
O6
DI2
O5
DI1
MC
31W
EN
CK
DI1
MC
31W
EN
CK
DI1
MC
31W
EN
CK
DI1
MC
31W
EN
CK
UG
474_
c2_0
2_11
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DX
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D DQ
C CQ
CM
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B BQ
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A AQ
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Res
et T
ype
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C6:
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D6:
1 DI
A6:
A1
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O5
B6:
1
BX
A6:
A1
W6:
W1
W6:
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W6:
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W6:
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