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Electronic circuits include a diode, a BJT (Bipolar Junction Transistor), and a FET (Field Effect Transistor). In this presentation, we briefly summarize the most important characteristics of the diode, transistor, amplifier, filter, and mixer.
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Introduction to Electronic Circuit
Electronic Circuit DesignElectronic Circuit DesignCHO, Yong HeuiCHO, Yong Heui
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab2
1. Diode
Nonlinear device
No voltage drop External circuits
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab3
iD = 0, vD ≤ VD0
iD = (vD - VD0) / rD , vD ≥ VD0
Piecewise linear model
1. Diode
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab4
Mode EBJ CBJ
Cutoff Reverse Reverse
Active Forward Reverse
Rev. Act. Reverse Forward
Saturation Forward Forward
Device structure
2. BJT
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab5
iC = ISeVBE/VT·(1+vCE/VA)
∂iC
∂vCE
ro ≡vBE=constant
-1
I-V characteristics
2. BJT
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab6
OP amp 의 어떤 terminal 도 ground에 연결되어 있지 않음 .
3 signal terminals and 2 power terminals (Not displayed)
Differential input voltage, single-ended output voltage
Infinite input impedance ii = 0
Zero output impedance
Zero common-mode gain (v2=v1 vo=0)
Infinite open-loop gain A
Infinite bandwidth : A is constant at any frequencies.
*Differential input voltage, single-ended output voltage
Ideal OP Amp
3. OP amp
Ideal OP amp
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab7
Selection of active device
4. Amplifier
pHEMT amplifier with package
Gain [dB]
Bandwidth [Hz]
Stability: oscillation
Noise figure [dB]: LNA
P1dB [dBm]: PA
Characteristics of active device: bias
Bare chip
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab8
Bias design
Assignment of AC and DC path
4. Amplifier
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab9
LNA (Low Noise Amplifier)
Noise figure: 2 dB Amplifier gain: 15 dB Return loss: 15 dB Reverse isolation: 20 dB Impedance matching: power and noise
4. Amplifier
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab10
SNR: signal to noise ratio Noiseless system: NF = 1 Noisy system: NF > 1 Ground
Noise figure (NF)
4. Amplifier
in
out
out
in
out
in
N
N
S
S
SNR
SNRNF
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab11
Simulation of LNA
PortOUTNum=2
PortINNum=1
CC2C=1.0 pF
CC1C=1.0 pF
LL3
R=L=1.0 nH
LL2
R=L=1.0 nH
TSMC_CM025RF_PMOS_RFPMOS_RF1
finger=16width=10 umlength=0.24 umType=2.5V twin-well
TSMC_CM025RF_NMOSNMOS2
Width=0.30 umLength=0.24 umType=2.5V_nom
LL1
R=L=1.0 nH
RR3R=50 Ohm
RR2R=50 OhmTSMC_CM025RF_NMOS
NMOS1
Width=0.30 umLength=0.24 umType=2.5V_nom
RR1R=50 Ohm
HP ADS (Advanced Design System)
AC and DC path
4. Amplifier
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab12
HPA (High Power Amplifier)
Output power (P1dB), power gain Linearity (OIP3) Efficiency (PAE) Temperature
Power amplifier scheme
4. Amplifier
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab13
Characteristics
5. Filter
2 port network: S parameters Pass band and stop band Return loss and insertion loss Ripple and selectivity (skirt) Pole and zero Group delay
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab14
Classification
LPF (Low Pass Filter) HPF (High Pass Filter) BPF (Band Pass Filter) BSF (Band Stop Filter): notch filter
Duplexer: 2 BPF Diplexer: LPF and HPF
5. Filter
Electronic Circuits Electronic Circuits DesignDesign
EM Wave LabEM Wave Lab15
Frequency conversion
Mixer VCO: Voltage Controlled Oscillator PLL: Phase Locked Loop TCXO: Temperature Compensated Crystal
Oscillator
6. Mixer
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