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5/24/2018 Electronic Circuit Exercise
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560K
560
1K
+12V
Fig. 2
RB2
RB1
560
1K
+12V
Fig. 4
10uA
Exercises of Electronic Circuit
1.In the circuit of Fig. 1. The transistor has = 100
and VBE = 0.7V. Find the Q point.2.For silicon transistor has =
100 and VBE =
0.7V. Find the Q point.
3.In the circuit of Fig. 3. The transistor has = 100
and VBE = 0.7V. Find the Q point.
4.For silicon transistor has = 100 and VBE =
0.7V. Find the Q point.
5.The silicon transistor to be used in the circuit of
Fig. 5 has a varies from 50 to 200. Find variation
in Q point
6. In the circuit of Fig. 6. Find variation in
quiescent current as varies from 50 to 200.
7.In the circuit of Fig. 7. The transistor has = 100and VBE =
0.7V. Find RB1 and RB2 so that ICQ =2mA
8.In the circuit of Fig. 8. The transistor has = 100 and VBE =
0.7V. Find RB so that ICQ =2mA
100K
10K
+12V
Fig. 3
50K
100K
560
1K
+12V
Fig. 1
60K
1K
+12V
Fig. 6RE
RC
+15V
1K
500
10KRB
VBB
Fig. 5
3V
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
2
9.In the circuit of Fig. 9. The transistor has = 100and VBE =
0.7V. Find RB1 and RB2 so that VCE =
5V
10.In the circuit of Fig. 10. The transistor has
= 100 and VBE = 0.7V. Find RB so thatVCE=4v
11. In the circuit of Fig. 11. The transistor has =100 and VBE =
0.7V. Find Vccso that Q(5V,2mA)
12.In the circuit of Fig. 12. The transistor has
= 100 and VBE = 0.7V. AssumeQ(5V,2mA), find RC
13. (ASEAN Skill Competition)
Transistor Ge, = 200. Find R1
14.In the circuit of Fig. 14. The transistor has
= 100 and VBE = 0.7V. Find VB
RB
1K
1K
+12V
Fig. 8
RB
1K
1K
+12V
Fig. 10
RB
1K
RC
+12V
Fig. 12
RB2
RB1
RE
RC
1K
+20V
Fig. 7
2K
RB2
RB1
RE
RC
1K
+12V
Fig. 9
2K
RB2
RB1
RE
RC
1K
+Vcc
Fig. 11
2K
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
3
R2
R1 RC
+6V
Fig. 12
VinVout
I = 50uA
1mA
10K
15.In the circuit of Fig. 15 has Q(6V,2mA). Plot
DCLL and ACLL.
16.In the circuit of Fig. 16 has Q(6V,2mA).
Plot DCLL and ACLL.
17.In the circuit of Fig. 17 has Q(6V,2mA). PlotDCLL and
ACLL.
18.In the circuit of Fig. 18 has Q(6V,2mA).Plot DCLL and
ACLL.
19.In the circuit of Fig. 19 has Q(6V,2mA). Plot
DCLL and ACLL.
20.In the circuit of Fig. 20 has Q(6V,2mA).
Plot DCLL and ACLL.
RB
1K
1K
+Vcc
Fig. 14
RB
1K
1K
+Vcc
1K
Co
Fig. 15
RB
1K
1K
+Vcc
1K
Co
Co
Fig. 18
RB2
RB1
1K
1K
+Vcc
Fig. 17
RB
500
1K
+Vcc
Fig. 14
10uA
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
4
21. In the circuit of Fig. 21. The silicon transistor
has = 100 and VBE = 0.7V. Find hie
22. In the circuit of Fig. 22. The silicon
transistor has = 100 and VBE = 0.7V. Findhib
23. In the circuit of Fig. 23. The silicon transistor
has = 100, VBE = 0.7V, hie =1K. Find Av
24. In the circuit of Fig. 24. The silicon
transistor has = 100, VBE = 0.7V, hie =1K.
Find Ai
25. In the circuit of Fig. 25. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. Find Zi, Zo
26. In the circuit of Fig. 26. The silicon
transistor has = 100, VBE = 0.7V, hie =1K.
Find Rc so that |Av| =100.
RB
560
1K
Fig. 23
Vin
Ci
+Vcc
RB
560
1K
Fig. 24
VinCe
Ci
+12V
RB
1K
1K
+Vcc
1K
Co
Co
1K
Fig. 19
RB
1K
1K
+Vcc
1K
Co
1K
Fig. 20
RB2
RB1
RE
RC
1K
+10V
Fig. 21
2K100K
50K
RB
500
1K
+10V
Fig. 22
330K
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
5
27. In the circuit of Fig. 27. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
28. In the circuit of Fig. 28. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
29. In the circuit of Fig. 29. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
30. In the circuit of Fig. 30. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
31. In the circuit of Fig. 31. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Zo and Zi
32. In the circuit of Fig. 32. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
4K
560
1K
Fig. 27
VinCe
Ci
+Vcc
4K1K
Co
4K
560
1K
Fig. 28
VinCe
Ci
+Vcc
4K1K
Co
4K
560
1K
Fig. 29
VinCe
Ci
+Vcc
4K1K
Co
1K
4K
560
1K
Fig. 30
VinCe
Ci
+Vcc
1K
Co
1K
4K
560
1K
Fig. 31
VinCe
Ci
+Vcc
1K
Co
1K
4K
560
1K
Fig. 32
Ce
Ci
+Vcc
1K
Co
1KIin
4K
560
1K
Vin
Ci
+Vcc
4K
Fig. 25 4K
560
RC
Vin
Ci
+Vcc
4K
Fig. 26
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
6
33. In the circuit of Fig. 33. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .
Find Av
34. In the circuit of Fig. 34. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
35. In the circuit of Fig. 35. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
36. In the circuit of Fig. 36. The silicon
transistor has = 100, VBE = 0.7V, hib
=200. All Cs . Find Zi and Zo
37. In the circuit of Fig. 37. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
38. In the circuit of Fig. 38. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
39. In the circuit of Fig. 39. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Ai
40. In the circuit of Fig. 40. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.All Cs . Find Ai
4K
200
1K
VinCi
CB
+Vcc
4K
Fig. 33
4K
200
1K
VinCi
CB
+Vcc
4K
Fig. 34
4K
200
1K
VinCi
CB
+Vcc
4K
Fig. 364K
500
1K
VinCi
CB
+Vcc
4K
500
Fig. 35
4K
500
2K
VinCi
CB
+Vcc
4K
500Co
2K
RL
Fig. 37
4K
500
2K
VinCi
CB
+Vcc
4K
500Co
2K
RL
Fig. 38
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
7
41. In the circuit of Fig. 41. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
42. In the circuit of Fig. 42. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
43. In the circuit of Fig. 43. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
44. In the circuit of Fig. 44. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
45. In the circuit of Fig. 45. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
46. In the circuit of Fig. 46. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
4K
500
2K
VinCi
CB
+Vcc
4K
500Co
2K
RL
Fig. 40
4K
500
2K
Ci
CB
+Vcc
4K500
Co
2K
RL
Iin
Fig. 39
4K
1K
Fig. 41
Vin
Ci
+Vcc
4K 1KCo
4K
1K
Fig. 42
Vin
Ci
+Vcc
4K 1KCo
4K
1K
Fig. 43
Vin
Ci
+Vcc
4KVo
+
_
4K
1K
Fig. 44
Vin
Ci
+Vcc
4K
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
8
47. In the circuit of Fig. 47. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .
Find Zi and Zo
48. In the circuit of Fig. 48. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Av
49. In the circuit of Fig. 49. The silicon transistor
has = 100, VBE = 0.7V, hie =2K. All Cs .Find Av
50. In the circuit of Fig. 50. The silicon
transistor has = 100, VBE = 0.7V, hie =2K.
All Cs . Find Ai
51. In the circuit of Fig. 51. The silicon transistor
has = 40, VBE = 0.7V. Find RB so that maximum
power on load.
52. In the circuit of Fig. 52. The silicon
transistor has = 20, VBE = 0.7V. Find Pomax,
Pccmax, max
4K
560
1K
Fig. 45
Vin
Ci
+Vcc
4K1K
Co
4K
560
1K
Fig. 46
Vin
Ci
+Vcc
4K1K
Co
4K
560
1K
Fig. 47
Vin
Ci
+Vcc
4K1K
Co
4K
560
1K
Fig. 48
Vin
Ci
+Vcc
4K1K
Co500
4K
560
1K
Fig. 49
Vin
Ci
+Vcc
4K
Vout
4K
560
1K
Fig. 50
Vin
Ci
+Vcc
4K
Vout
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
9
53. In the circuit of Fig. 53. The silicon transistor
has = 40, VBE = 0.7V. Find RB so that maximumpower on load.
54. In the circuit of Fig. 54. The silicon
transistor has = 20, VBE = 0.7V. Find Pomax,
Pccmax, max
55. In the circuit of Fig. 55. The silicon transistor
has = 20, VBE = 0.7V. Find N so that maximumpower on load.
56. In the circuit of Fig. 56. The silicon
transistor has = 20, VBE = 0.7V. Find Pomax,
Pccmax, max
57. In the circuit of Fig. 57. Assuming that the
amplifier is designed for maximum efficiency. The
silicon transistor has = 20, VBE = 0.7V. The
maximum load power is 2W. Find Pcc
58.In the circuit of Fig. 58. Assuming that the
amplifier is designed for maximum efficiency.
The silicon transistor has = 20, VBE = 0.7V.
The maximum load power is 2W. Find ICQ
RB
+12V
Fig. 51
RL
Vin
8
Ci
RB
+12V
Fig. 52
RL
Vin
8
Ci
RB
+12V
Fig. 53
RL
Vin CiRE
8
4
RB
+12V
Fig. 54
RL
Vin CiRE
8
4
330
+12V
Fig. 55
RL
Vin Ci
8
N:1
330
+12V
Fig. 56
RL
Vin Ci
8
N:1
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
10
59. In the circuit of Fig. 59. Assuming that the
amplifier is designed for maximum efficiency. The
silicon transistor has = 20, VBE = 0.7V. Themaximum load power
is 2W. Find N
60.In the circuit of Fig. 60. Assuming that the
amplifier is designed for maximum efficiency.
The silicon transistor has = 20, VBE = 0.7V.The maximum load
power is 2W. Find VCE max
61.In the circuit in 61. The silicon transistor has = 20, VBE =
0.7V. Find VM
62. In the circuit of Fig. 62. The silicon
transistor has = 20, VBE = 0.7V. Find Pomax,
Pccmax, max
63. In the circuit of Fig. 63. The silicon transistor
has = 20, VBE = 0.7V. Find VM
64. In the circuit of Fig. 64. The silicon
transistor has = 20, VBE = 0.7V. Find Pomax,
Pccmax, max
RB
+12V
Fig. 57
RL
Vin Ci
8
N:1
RB
+12V
Fig. 58
RL
Vin Ci
8
N:1
100
+20V
Fig. 61
RL
8C2
100
CLC1
Vin
M
100
+20V
Fig. 62
RL
8
C2
100
CLC1
Vin
M
RB
+12V
Fig. 59
RL
Vin Ci
8
N:1
RB
+12V
Fig. 60
RL
Vin Ci
8
N:1
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
11
1K 10K
10K
5.1V
+15V Vout
Fig. 67
+18V
Fig. 65
C2
6.8K
M5.6K
4.7K 1.1K
IC2Q1
Q2
75
2M
+18V
Fig. 66
65.(ASEAN Skills Competition)
In the circuit of Fig. 65. The silicon transistor has
1=2 = 200, VBE = 0.7V. Find IC2
66.(ASEAN Skills Competition)
In the circuit of Fig. 66. 1=140, 2 =
180,VBE = 0.7V. Find IBof Q1
67.Find Vout 68.Find Vo
69.Find Vout 70.Find Vo
R2
+20V
Fig. 63
RL
8
C2
100
Vin
MR1
-20V
R2
+20V
Fig. 64
RL
8
C2
100
Vin
MR1
-20V
10K +
-
10K
+10V
+5VVo
Fig. 68
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
12
+
-
10K
+12V
10K
8V
Fig. 69
6V
10K
5K
10K Vo
Fig. 70
+15V
+
-
10K
71.Find Vo
72.(ASEAN Skill Competition)Find Vo
73.Find Vo 74.Find Vo
75.Find Vo 76.Find Vz so that Vo=12V
20K
10K
10K5V
+30V
Vout10K
+
-Fig. 73
20K10K
10K
5V
+30V
10K Vo
+
-Fig. 74
+25V
10K
20K
30K
30K
11.3V
+Vo
Fig. 71
1K
+ V+25V
10K20K
30K
30K8.3V
Fig. 72
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5/24/2018 Electronic Circuit Exercise
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Electronic Circuit
13
77.Find I 78.Find Vo
79.Find Vo 80.Find Vo
1K
10K
.33uF
7805
I
+20V 1 2
3
Fig. 77
1K.33uF
7812+20V 1 2
3Fig. 78 .1uF Vo
+
-
10K
10K
+20V 1 2
3
Fig. 79
10K
7805
1K Vo
+
-
1K
7815
+20V
1 2
3
Fig. 80
Vo+
-
1K
10K
1K
.33uF
7812+20V 1 2
3
Vo
Fig. 75
+
_
20K
10K
10K
Vz
+30V
10K Vo+
-Fig. 76
