Work in Progress – Do Not Publish ITRS Summer Conference 2007 San Francisco, USA 1 International Technology Roadmap for Semiconductors 2007 ITRS Update/ORTC

1

Work in Progress – Do Not Publish ITRS Summer Conference 2007 San Francisco, USA

International Technology Roadmap for Semiconductors

2007 ITRS Update/ORTC Product Models Status[7/18 San Francisco ITRS Public Conference]

A.Allan, Final, Rev 5.0, Final 07/17/07

Including Latest DRAM and Flash Proposed Changes and ITRS Definition Proposal/Update

2


ORTC Overview – 2007 ITRS - Renewal

• ORTC Table 1a,b - STRJ Flash Poly (Un-contacted dense lines)– 2-year Technology Cycle* (0.5x/4yrs) Extended to 2008– 180nm/2000; 130nm/2002; 90nm/2004; 65nm/2006; 45nm pull-in to 2008– Then return to 3-year Technology Cycle* 2 years ahead of DRAM ’08-’22

• DRAM will NOT be a required standard TWG table technology tracking header– 2007 ITRS Update DRAM 3-year cycle stagger-contacted Unchanged, – However, Bits/chip delayed 1Year; 6f2 2006-2022; 56% Area Efficiency pull-in 2yrs

• ORTC Table 1a,b - MPU/ASIC M1 Half-Pitch Trend Unchanged– Stagger-contacted, same as DRAM– 2.5-year Technology Cycle* (.5x/5yrs) – 180nm/2000; 90nm/2005; 45nm/2010(equal DRAM)– Then continue on a 3-year Technology Cycle*, equal to DRAM 2010-2020

• ORTC Table 1a,b – MPU/ASIC Printed Gate Length per FEP and Litho TWG ratio relationship to Final Physical Gate Length - 2005 ITRS target for (3-year cycle* after 2005 Unchanged.

• TWG table Product-specific technology trend driver header items, as required by TWGS, will be added in 2007 to individual TWG tables from ORTC Table 1a&b

• Chip Size/Function Size/Density Models [Logic Gate; SRAM Cell; Dram Cell; Flash Cell (SLC, MLC)] are connected to latest DRAM and Flash proposals

– Products: Flash; DRAM; High Performance (hp) MPU; Cost Perf. (cp) MPU; hp ASIC

*Note: Cycle = time to 0.5xlinear scaling every two

cycle periods ~ 0.71x/ cycle

[changes to DRAM and FlashPlus extend to 2022]

3


2007 Definition of the Half Pitch - unchanged[No single-product “node” designation; DRAM half-pitch still litho driver; however,

other product technology trends may be drivers on individual TWG tables]

Poly Pitch

Typical flash Un-contacted Poly

FLASH Poly Silicon ½ Pitch = Flash Poly Pitch/2

8-16 Lines

Metal Pitch

Typical DRAM/MPU/ASIC Metal Bit Line

DRAM ½ Pitch = DRAM Metal Pitch/2

MPU/ASIC M1 ½ Pitch = MPU/ASIC M1 Pitch/2

Source: 2005 ITRS - Exec. Summary Fig 2

4


Production Ramp-up Model and Technology Cycle Timing

Vo

lum

e (P

arts

/Mo

nth

)

1K

10K

100K

Months0-24

1M

10M

100M

Alpha

Tool

12 24-12

Development Production

Beta

Tool

Production

Tool

First

Conf.

Papers

First Two Companies

Reaching Production

Vo

lum

e (W

afer

s/M

on

th)

2

20

200

2K

20K

200K

Source: 2005 ITRS - Exec. Summary Fig 3

Fig 3 2007 - Unchanged

5


2005 ITRS Flash Poly Half-Pitch Technology: 2.0-year cycle until 2yrs ahead of DRAM @ 45nm/’08

3-Year Technology Cycle2-Year Technology Cycle [’98-’06 ]

Year of Production

Technology -UncontactedPoly H-P (nm)

2003 20052001

65 223245 16

2008

20062002[Actual]

20042000[Actual]

90130180

76107151 5057 13

201520122009 2018

201620132010 2019 2020

2005 ITRS MPU M1 Half-Pitch Technology: 2.5-year cycle; then equal DRAM @45nm/2010

Year of Production

Technology- ContactedM1 H-P (nm)

157 136 119 103 78 68 59 52

201620132010 2019[July’08][July’02] 20052000

201820152012 2020

[130]180 [ 65]90 2232 1645

2008200620032001 2002 2004 2007 2009

2.5-Year Technology Cycle3-2-Yr Cycle] 3-Year Technology Cycle

14

2007 (’07-’22) ITRS Technology Trends DRAM M1 Half-Pitch : 3-year cycle

3-Year Technology Cycle2-Year Technology Cycle [‘98-’04]

Year of Production

Technology - ContactedM1 H-P (nm)

201820152012 2020

201620132010 2019

2003 20052001

65 223245 16

20082006 2009

20072002[Actual]

20042000[Actual]

90130180

80107151 71 57 50 14

Update

2022

11

2022

11

2022

10 ’07 ‘08 ’09 ’10 ’11 ’14 ‘17 ‘20IS: 53 45 40 36 32 22 16 11

6


Figure 8 ITRS Product Technology Trends – [+ Update Flash]Fig 7&8 Simplified – Option 1

2005 ITRS Product Technology Trends - Half-Pitch, Gate-Length

1.0

10.0

100.0

1000.0

1995 2000 2005 2010 2015 2020

Year of Production

Pro

du

ct H

alf-

Pit

ch, G

ate-

Len

gth

(n

m)

DRAM M1 1/2 Pitch

MPU M1 1/2 Pitch(2.5-year cycle)

Flash Poly 1/2 Pitch

MPU Gate Length -Printed

MPUGate Length -Physical

MPU M1.71X/2.5YR

Nanotechnology (<100nm) Era Begins -1999

GLpr IS =1.6818 x GLph

2007 - 2022 ITRS Range

MPU & DRAM M1& Flash Poly

.71X/3YR

Flash Poly.71X/2YR

Gate Length.71X/3YR

Before 1998 .71X/3YR

After 1998.71X/2YR

2025

Flash 2YRExtended

plus extend all to 2022]

[DRAM &, MPU Unchanged;

Past Future

7


Source: 2005 ITRS Document online at: http://www.itrs.net/Links/2005ITRS/Home2005.htm

Moore’s Law & MoreMore than Moore: Diversification

Mo

re M

oo

re:

Min

iatu

riza

tio

nM

ore

Mo

ore

: M

inia

turi

zati

on

Combining SoC and SiP: Higher Value SystemsBas

eli

ne

CM

OS

: C

PU

, M

emo

ry,

Lo

gic

BiochipsSensors

ActuatorsHV

PowerAnalog/RF Passives

130nm

90nm

65nm

45nm

32nm

22nm...V

130nm

90nm

65nm

45nm

32nm

22nm...V

Information Processing

Digital contentSystem-on-chip

(SoC)

Interacting with people and environment

Non-digital contentSystem-in-package

(SiP)

Beyond CMOS

2007 ITRS Executive Summary Fig 5[updated for 2007]

Traditional ORTC Models

[Ge

om

etr

ica

l &

Eq

uiv

ale

nt

sc

ali

ng

]

Sca

lin

g (

Mo

re M

oo

re)

Functional Diversification (More than Moore)

[2007 – add Definitions; Update Graphic]

Continuing SoC and SiP: Higher Value Systems

HVPower Passives

8


2007 ITRS “Moore’s Law and More” Definition Graphic Proposal

Computing &Data Storage

Heterogeneous IntegrationSystem on Chip (SOC) and System In Package (SIP)

Sense, interact, Empower

BaselineCMOS Memory RF HV

PowerPassives Sensors,

ActuatorsBio-chips,Fluidics

“More Moore”

“More than Moore”

Source: ITRS, European Nanoelectronics Initiative Advisory Council (ENIAC)

9


1. Scaling (“More Moore”)a. Geometrical (constant field) Scaling refers to the continued shrinking of

horizontal and vertical physical feature sizes of the on-chip logic and memory storage functions in order to improve density (cost per function reduction) and performance (speed, power) and reliability values to the applications and end customers.

b. Equivalent Scaling which occurs in conjunction with, and also enables, continued Geometrical Scaling, refers to 3-dimensional device structure (“Design Factor”) Improvements plus other non-geometrical process techniques and new materials that affect the electrical performance of the chip.

2. Functional Diversification (“More than Moore”)Functional Diversification refers to the incorporation into devices of functionalities that do not necessarily scale according to "Moore's Law," but provide additional value to the end customer in different ways. The "More-than-Moore" approach typically allows for the non-digital functionalities (e.g. RF communication, power control, passive components, sensors, actuators) to migrate from the system board-level into a particular package-level (SiP) or chip-level (SoC) potential solution.

2007 ITRS Definitions Proposal: “More Moore” and “More than Moore”

10


PIDS/FEP - Simplified Transistor Roadmap[Examples of “Equivalent Scaling” from ITRS PIDS/FEP TWGs]

65nm 45nm 32nm 22nm

PDSOI FDSOI

bulk

stressors + substrateengineering

+ high µmaterials

MuGFETMuCFET

elec

tro

stat

ic c

on

tro

lSiON

poly

high k

metal

gate stack

planar 3D

Source: ITRS, European Nanoelectronics Initiative Advisory Council (ENIAC)

[ ITRS DRAM/MPU Timing: 2007/7.5 2010 2013 2016 ]

11


[Back to ORTC 2007 Renewal Update]

• ITRS Technology Demand Tracking [SICAS]

• ITRS Function Size Models

• ITRS Functions/Chip Models

• ITRS Chip Size Models

• Summary

12


Fig 4 2005 ITRS Technology Cycle Timing Compared to Actual Wafer Production Technology Capacity Distribution

Fea

ture

Siz

e (H

alf

Pitc

h) (m

)

Year

0.01

0.1

1

10Source: SICAS**W.P.C.= Total Worldwide Wafer Production Capacity 　 (Relative Value *)

* Note: The wafer production capacity data are plotted from the SICAS* 4Q data for each year, except 2Q data for 2005. The area of each of the production capacity bars corresponds to the relative share of the Total MOS IC production start silicon area for that range of the feature size (y-axis). Data is based upon capacity if fully utilized.

1997 1998 1999 2000 2001 2002 2003 200620052004 2007Source: 2005 ITRS - Exec. Summary Fig 4

W.P.CW.P.CW.P.CW.P.CW.P.CW.P.C W.P.C W.P.C W.P.C >0.7m

0.7-0.4m

0.4-0.3m

0.3- 0.2m

0.2- 0.16m

<0.12m

0.16-.12m

<0.

4m

<0.

4m

<0.

3m

<0.

3m

<0.

2m

<0.

2m

<0.

16m

<0.

16m

<0.

12m

(Fea

ture

Siz

e o

f R

epo

rted

Tec

hn

olo

gy

Cap

acit

y o

f S

ICA

S P

arti

cip

ants

)

3-Year Cycle 3-Year Cycle2-Year Cycle

= 2003/04 ITRS DRAM Contacted M1 Half-Pitch Actual = 2005 ITRS DRAM Contacted M1 Half-Pitch Target

** Source: The data for the graphical analysis were supplied by the Semiconductor Industry Association (SIA) from their Semiconductor Industry Capacity Statistics (SICAS). The SICAS data is collected from worldwide semiconductor manufacturers (estimated >90% of Total MOS Capacity) and published by the Semiconductor Industry Association (SIA), as of July, 2005. The detailed data are available to the public online at the SIA website, http://www.sia-online.org/pre_stat.cfm .

SIA/SICAS　Data**:　1-yr　

delay　from　ITRS　Cycle　Timing

to　25%　of　MOS　IC　Capacity

127nm

180nm

255nm

360nm

510nm

720nm

90nm

ITRSTechnology

Cycle

[2007–need 3Q07 Update]

13


MOS Capacity by Dimensions

0.0200.0400.0600.0800.0

1000.01200.01400.01600.01800.02000.0

2Q04

3Q04

4Q04

1Q05

2Q05

3Q05

4Q05

1Q06

2Q06

3Q06

4Q06

1Q07

WSp

W x

1000

>=0.7µ

<0.7µ >=0.4µ

<0.4µ >=0.3µ

<0.3µ >=0.2µ

<0.2µ >=0.16µ

<0.16µ

<0.16µ >=0.12µ

<0.12µ

2-yrs to >20% of Total MOS for 0.71x Technology Reduction Cycle

SICAS 65nm Capacity Tracking Kickoff – 2Q07 Update: Nov’07

Source: SIA/SICAS Report: www.sia-online.org/pre_statistics.cfm

~32% of Total MOS

0.30 to 0.25u to.21u

0.42 to 0.36u to.30u

0.60 to 0.51u to.42u

0.85 to 0.72u to.60u

2Q

?

~21% of Total MOS?Technology DemandWill 2-year Cycle

Continue? Need 65nm split!

0.11 to 0.090u to 0.075un-1

0.15 to 0.13u to.11un-2

0.21 to 0.18u to.15un-3

0.71x

Next TBD?:20%

1Q07?(2yr Cycle)

1Q08?3yr Cycle

<0.075 to 0.065u to.053u

n [available 4Q07]

14


MOS Capacity by Wafer-size

0.0200.0400.0600.0800.0

1000.01200.01400.01600.01800.02000.0

2Q04

3Q04

4Q04

1Q05

2Q05

3Q05

4Q05

1Q06

2Q06

3Q06

4Q06

1Q07

WSp

W x1

000

(8 in

ch eq

uiva

lents)

< 200mm

200mm

300mm1Q 4Q3Q2Q

20061Q 3Q2Q

20071Q 4Q3Q2Q

20041Q 4Q3Q2Q

20051Q 4Q3Q2Q

2003

71%YoY

1Q 4Q1997

Waf

er S

tart

s

p

er W

eek

(1K

)

362.7[44%]

821.4[100%]

277.4[38%]

728.2[100%]

17.4%YoY

43.0%YoY

Source: SIA/SICAS Report: www.sia-online.org

1Q07: 300mm = 33% of Total MOS200mm = 56% of Total MOS

<200mm = 11% of Total MOS

SICAS 300mm MOS Capacity By Wafer Size Tracking – 2Q07 Update:

[Total MOS only – 8” Equivalent] 11.8%CAGR

2000

1000

0

<200mm

200mm

300mm

12.5%YoY

300mm/1Q04(3yrs after Intro)

200mm/1Q97SICAS Tracking Begins(6yrs after Intro)

1991->2001: 10 years intro->introWafer Generation

15


2005 ITRS Product Function Size Trends - Cell Size, Logic Gate(4t) Size

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

2000 2005 2010 2015 2020

Year of Production

Cel

l, L

og

ic G

ate

Siz

e(u

m2

)

DRAM Cell Size (u2)

Flash Cell Size (u2)SLC(NEW)

Flash Eqv.bit Size(u2)MLC(NEW)

MPU SRAM Cell Size(6t)(u2)

MPU Gate Size (4t)(u2)

Note for Flash: SLC = Single-Level-Cell Size

MLC =Multi-Level-Cell

(Electrical Equivalent) Cell Size

2007 - 2022 ITRS Range

Figure 9 ITRS Product Function Size – [Plus Updates]Fig xx Simplified

(@ 2 MLC bits/physical cell area)

Flash: 4f2

Design Physical AreaFactor Improvement

DRAM: 6f2 LastDesign Area

Factor Improvement

Logic Gate: NODesign Area

Factor Improvement(Only Scaling)

SRAM: GradualDesign Area

Factor Improvement

Flash: (MLC @ 2 bits/cell =

2f2 EquivalentArea Factor)

[changes to DRAM and Flashextend to 2022]

Flash 2YRExtended

DRAM 6f2Pull-in to ‘06

Flash 4 bits/cell1f2 Begin 2010

16


2005 ITRS Product Technology Trends Functions/Chip

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1970 1975 1980 1985 1990 1995 2000 2005 2010 2015 2020

Year of Production

Pro

duct

Fun

ctio

ns/C

hip

(Gig

a (1

0^9)

- b

its, t

rans

isto

rs )

Flash Bits/Chip (Gbits) Single-Level-Cell(SLC )

Flash Bits/Chip (Gbits) Multi-Level-Cell(MLC)

MPU GTransistors/Chip - high-performance(hp)

MPU GTransistors/Chip - cost-performanc(cp)

DRAM Bits/Chip (Gbits)

Average Industry "Moores Law"

Chip Size Trends – 2005 ITRS Functions/Chip Model – Needs Update

Past Future2005 - 2020 ITRS Range

AverageIndustry 1970-2020

“Moore’s Law”2x Functions/chip

Per 2 years

(@Volume Production, Affordable Chip Size**)

** Affordable Production

Chip Size Targets:DRAM, Flash < 145mm2

hp MPU < 310mm2

cp MPU < 140mm2

** Example Chip Size Targets:1.1Gt P07h MPU

@ intro in 2004/620mm2

@ prod in 2007/310mm2

** Example Chip Size Targets:0.39Gt P07c MPU

@ intro in 2004/280mm2

@ prod in 2007/140mm2

MPU ahead or =“Moore’s Law”2x Xstors/chipPer 2 years Thru 2010

[2007 - extend to 2022]

17


2005 ITRS Product Technology Trends - Functions per Chip

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1995 2000 2005 2010 2015 2020

Year of Production

Pro

du

ct F

un

ctio

ns/

Ch

ip[

Gig

a (1

0^9)

- b

its,

tra

nsi

sto

rs ]

Flash Bits/Chip (Gbits)Single-Level-Cell (SLC )

Flash Bits/Chip (Gbits)Multi-Level-Cell (MLC)

MPU GTransistors/Chip -high-performance (hp)

MPU GTransistors/Chip -cost-performanc (cp)

DRAM Bits/Chip (Gbits)

Average Industry "Moores Law"

AverageIndustry 1970-2020

“Moore’s Law”2x Functions/chip

Per 2 years

Figure 10 ITRS Product Functions per Chip DRAM & Flash Update

[plus extend to 2022]

2025

Past Future 2007 - 2022 ITRS Range

2022

DRAM Bits/chip one-year bits/chip generation Delay;

Flash MLC 4 bits/chip 2010

Flash SLC Bits/chip for 1-year technology

Pull-in update

18


0

100

200

300

400

500

600

700

1995 1998 2001 2004 2007 2010 2013 2016 2019 2022 2025

Year of Introduction and Production

(mm

2)

DRAM Introduction Chip Size

Sawada Production Chip Size IS

4 chips per Litho Field @ 572mm2 = 143mm2

(22x6.5)

4G 8G 32G 64G16G

Bits/

chip: 128G64M

Bits/

chip:

256M

128G1G 2G

4G

8G 32G 64G

16G

256G 1T

512M

5 chips per Litho Field @ 704mm2 = 141mm2

(22x6.4)

128M

32G

16G

4G

8G

2G

32G

16G

64G2G

DRAM　Des.　

Factor: 8.0 6.011 8.0 8.0 8.0 6.0 6.0 6.06.011 6.0 6.0

DRAM

Max Litho Field 2005 ITRS (4x) : 834mm2 (26x32)

Prod Cell Area Efficiency (CAE) = 63%-56%

Intro Cell Area Efficiency (CAE) = 73%-75%

DRAM　M1　HP: 90 64 45 22 1632 11 8128180255360

2 C

hips

per

Max

Lith

o F

ield

20

05 IT

RS

(4x

):

417m

2 (2

6x16

)


Chip Size Trends – 2005 ITRS DRAM Model – UpdateUpdate

2007 - extend to 2022; plus:

DRAM chip size shrinks Due to one-year bits/chip generation Delay;

6.0

16G @ 6f2

19



2005 Proposal ITRS Flash chip Size (NEW) Model (Allan)(Rev 1K, 06/23/05)

0

100

200

300

400

500

600

700

1995 1998 2001 2004 2007 2010 2013 2016 2019 2022 2025


(mm

2)

Flash SLC Production Chip Size

4 chips per Max Affordable Litho Field @

572mm2 = 143mm2 (22x6.5)

Flash Prod Cell Area Efficiency (CAE) = 67%

Flash Intro Cell Area Efficiency (CAE) =TBD -

no model

5 chips per Max Affordable Litho Field @

704mm2 = 141mm2 (22x6.4)

Flash

Bits/chip: 4G 8G 16G 32G 64G 128G256M 1G64M 2G

16 4.032 8.0 4.0 4.0 4.0 4.0 4.04.0　Flash　SLC　　

Des.Factor: 4.0 4.0

128180255360Flash:　　90 64 45 22 1632 11 8WAS/IS: 128180255360

8.0 6.011 8.0 8.0 8.0 6.0 6.0 6.06.011 6.0 6.0

90 64 45 22 1632 11 8

DRAM　　

HP

DRAM　Des.　

Factor:

2005:Chip Size Trends – 2005 ITRS Flash Model - Update[2007 - extend to 2022]

Pull-in 1yr & Shrink

6.0

20


0

100

200

300

400

500

600

700

1995 1998 2001 2004 2007 2010 2013 2016 2019 2022 2025


(mm

2)

MPU hp Production Chip Size

MPU cp Production Chip Size

MPU hp Introduction Chip Size

MPU cp Introduction Chip Size

DRAM　M1　HP: 90 64 45 22 1632 11 8128180255360

90　 68 45 22 1632 11 8MPU: 136180255360

8G

SRAM Cell Efficiency= 60%Logic Gate Efficiency = 50%

p13c1.5Bt

p16c3.1

p19c p22c

800

Max Litho Field 2005 ITRS (4x): 834mm2 (26x32)

p07h1.1Bt

p10h2.2Bt

p07h

1.1Bt

p16h p19h p22hp10h

2.2Bt

p13h

4.4Bt

p02h276Mt

p00h138Mt

p98h69Mt

p04h552Mt

p10c768Mt

hp MPU = 82% SRAM Transistors, 18% Core Logic Transistors

cp MPU = 58% SRAM Transistors, 42% Core Logic Transistors

p02h

276Mt

p04h

552Mt

26% / 2yrsChip Size Growth

p04c192Mt

p02c96Mt

p00c48Mt

p07c384Mt

p07c386Mt

p10c773Mt

p04c192Mt

p02c96Mt

p00c48Mt

p13c1.5Bt

Affordable hp MPU prod Target: 310mm2

Affordable cp MPU prod Target: 140mm2

[2.5yr　Technology　Cycle　　　　

2000- 2010]　

2 C

hips

per

Max

Lith

o F

ield

20

05 IT

RS

(4x

): 41

7m2

(26x

16)

Chip Size Trends – 2005 ITRS MPU Model - unchanged[2007 - extend to 2022]


p25c

p25h

P22c12.4Bt

P22h35.4Bt

386Mt

773Mt

P22c12.4Bt

21


ORTC Summary – 2007 Renewal• Flash Model un-contacted poly half-pitch Extended on 2-year cycle* to 2

years ahead of DRAM (contacted) in 2008, then 3-year cycle*.• DRAM Model stagger-contacted M1 half-pitch unchanged from 2005 ITRS (3-

year cycle* after 2004), however Bits/Chip shifted by one year; 6f2/2006-22• MPU M1 stagger-contact half-pitch unchanged on a 2.5-year cycle* through

2010/45nm, then 3-year cycle*.• Printed MPU/ASIC Gate Length FEP and Litho TWGs ratio agreement, and

Physical GL targets are both unchanged and on 3-year cycle* beginning 2005.• New 2007 Definitions added and agreed at Annecy, France, meetings:

– “Moore’s Law” (typically digital computing) Functional and Performance scaling is enabled by both “Geometrical” and also “Equivalent” scaling technologies

– “Functional diversification” (typically non-digital sensing, interacting) system board-level migration/miniaturization is enabled by system-in-package and system-on-chip

• Industry Technology Capacity (SICAS) [1Q07 published status] continues on a on 2-year cycle rate at the leading edge.

• Total MOS Capacity (SICAS) has been growing ~12% CAGR (SICAS), and 300mm Capacity Demand has ramped to 33% of Total MOS.

• Historical unchanged chip size models have been updated & “connected” to latest Product scaling rate model proposals, and include design factors, function size, and array efficiency targets

• The average of the industry product “Moore’s Law” (2x/chip per 2 years) continues to be met throughout the latest 2007-2022 ITRS timeframe

[* ITRS Cycle definition = time to .5x linear scaling every two cycle periods]

[Updated Proposals and extend to 2022]

[plus lower Area efficiency 56% pull-in 2 years]

Documents

Work in Progress – Do Not Publish ITRS Summer Conference 2007 San Francisco, USA 1 International Technology Roadmap for Semiconductors 2007 ITRS Update/ORTC