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ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 1
2007 ITRS
Emerging Research Materials
[ERM]
December 5, 2007
Michael Garner – IntelDaniel Herr – SRC
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 2
2006 - 2007 ERM ParticipantsHiro Akinaga AISTBob Allen IBMNobuo Aoi MatsushitaKoyu Asai RenesasYuji Awano FujitsuDaniel-Camille Bensahel STMChuck Black BNLThomas BjornholmAgeeth Bol IBMBill Bottoms NanonexusGeorge Bourianoff IntelAlex Bratkovski HPMarie Burnham FreescaleWilliam Butler U. of AlabamaJohn Carruthers Port. State Univ.
Zhihong Chen IBM
U-In Chung SamsungRinn Cleavelin TIReed Content AMDHongjie Dai Stanford Univ.Joe DeSimone UNCJean Dijon LETITerry Francis T A Francis Assoc.Chuck Fraust SIASatoshi Fujimura TOKMichael Garner Intel Avik GhoshEmmanuel Giannelis Cornell Univ.Michael Goldstein IntelJoe Gordon IBM
Jim Hannon IBM
Craig Hawker UCSBRobert Helms UTDRudi Hendel AMATDan Herr SRCSusan Holl Spansion Greg Higashi IntelHarold Hosack SRCJim Hutchby SRCKohei Ito Keio Univ.James Jewett IntelAntoine Kahn Princeton Univ. Sergie Kalinin ORNLTed Kamins HPMasashi Kawasaki Tohoku Univ.Steve Knight NISTGertjan Koster Stanford Univ.Roger Lake U.C. Riverside Louis Lome IDA Cons.Allan MacDonald Texas A&MFrancois Martin LETIFumihiro Matsukura Tohoku UAndrew Millis Columbia Univ.Bob Miller IBMChris Murray IBMPaul Nealey U. Wisc.We-Xin Ni NNDLFumiyuki Nihey NECDmitri Nikonov IntelYoshio Nishi StanfordChris Ober Cornell Univ.Brian Raley FreescaleRamamoorthy Ramesh U.C. BerkeleyNachiket Raravikar IntelMark Reed Yale Univ.
Curt Richter NISTDave Roberts Air ProductsFrances Ross IBMTadashi Sakai ToshibaLars Samuelson Lund UniversityMitusru Sato TOKJohn Henry Scott NISTFarhang Shadman U Az.Sadasivan Shankar IntelAtsushi Shiota JSRMicroReyes Sierra U Az.Kaushal Singh AMATSusanne Stemmer UCSBNaoyuki Sugiyama TorayShinichi Tagaki U of TokyoKoki Tamura TOKYasuhide Tomioka AISTEvgeny Tsymbal U. of NebraskaEmanuel Tutuc IBMKen Uchida ToshibaJohn Unguris NISTBert Vermiere Env. Metrol. Corp.Yasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLARainer Waser Aacken Univ.Stanley Williams HPC.P. Wong GA Tech. Univ.H.S. Philip Wong Stanford UniversityWalter Worth ISEMATECHHiroshi Yamaguchi NTTToru Yamaguchi NTTIn Kyeong Yoo SamsungVictor Zhirnov SRC
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 3
1.00E+00
1.00E+02
1.00E+04
1.00E+06
1.00E+08
1.00E+10
1.00E+12
1.00E+14
1.00E+16
1.00E+18
1.00E+20
1.00E+22
1.00E+24
1.00E+26
1945 1955 1965 1975 1985 1995 2005 2015 2025 2035 2045 2055
Ato
ms
pe
r B
it
Macromolecular Scale Devices are on the ITRS Horizon
ITRS
Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp. 34-43 (2001).
Macromolecular Scale Components:Low dimensional nanomaterialsMacromoleculesDirected self-assemblyComplex metal oxidesHetero-structures and interfacesSpin materials
Macromolecular Scale Devices
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 4
Outline• ERM Goals and Scope• Emerging Research Device Examples• Lithography Example• FEP Example• Interconnect Example• Assembly & packaging Example• Environment Safety & Health• ERM Metrology & Modeling Needs• Summary
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 5
Emerging Research Materials [ERM]
New Cross-cutting ERM Chapter Goal: Identify critical ERM technical and timing
requirements for ITWG identified applications Align ERM requirements with ITWG needs
ERM with potential value to ITWG GapsDifficult challenges that must be overcome
Consolidate materials research requirements for:University and government researchers
Chemists, materials scientists, etc.Industry Researchers
Semiconductor Chemical, material, and equipment suppliers
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 6
ERM Potential ITWG ApplicationsMaterials ERD
MemoryERD Logic Lithography FEP Interconnects Assembly and
Package
Low Dimensional Materials
Macromolecules
Self Assembled Materials
Spin Materials
Complex Metal Oxides
Interfaces & Heterointerfaces
Potential Applications Identified
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 7
ERM for Emerging Research DevicesExamples
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 8
Emerging Research Device Applications
Device State* Emerging Materials
1D Charge State (Low Dimensional Materials) Molecular State (Macromolecules) Spin State (Spin Materials and CMO**) Phase State (CMO**and Heterointerfaces) Memory
– Fuse/anti-fuse, Ferroelectric FET, etc.
All Devices have critical interface requirements
*Representative Device Applications**CMO = Complex Metal Oxides
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 9
1D Charge State
Carbon Nanotube FET
Source Intel
Group IV & III-V NanowiresGrow in 111 OrientationCatalyst determines location(T. Kamins, el. Al., HP)
Atomically smooth Heterostructures(L. Samuelson, Lund Univ.)
Nanotube Challenges
•Control of Location &
Orientation
•Control of Bandgap
•Contact Resistance
Quantum DotA. Geim, Manchester U.
Graphene & Graphitic Carbon
Advantage: Patternable
Challenge: Deposition, Edge Passivation
Carrier doping & control is challenging for low dimensional materials
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 10
• Need more research on contact formation• Novel lower potential barrier contacts…
Molecular State
High contact energy barriers may be
masking potential molecular switching!!
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 11
Spin State
Need Room Temp FM Semiconductor
Maximum Curie Temperature
0
100
200
300400
500
600
700
1990 1995 2000 2005
Year
Cur
ie T
empe
ratu
re (T
c (K
)) Doped Oxides
(III.Mn)V
Carrier mediated exchange
Room temperature ferromagnetic semiconductors (T curie)
•Reports of high Currie temperature FM semiconductors•GeMn Nanocolumns >400K•SiMn >400K•(InMn)P ~300K•Need verification & more study
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 12
Complex Metal Oxides• Complex Metal Oxides
– MgO, Pb(Zr1-xTix)O3, La1-xSrxMnO3 , BiFeO3
• Memory – FeFET (Ferroelectric polarization)– Fuse-antifuse (Resistance change, etc.)
• Logic – Spin Tunnel Barriers– Novel Logic Heterostructures (Coupling charge to magnetic
properties & alignment)• Challenges
– Control of Vacancies– Contact stability
• Hydrogen degradation – Electric field & environmental stability– Control of stress & crystal structure
RHEED excited Cathodoluminescence
Oxygen VacanciesD. Winkler, et. al. 2005
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 13
• Materials exhibit complex phase relationships•Structure, Strain, Spin, Charge, Orbital Ordering
• Goal: Determine whether complex phases and coupled dynamic and static properties have any potential to enable alternate state logic devices
• Example: Mott transition or other coupled states
Strongly Correlated Electron State
Can these materials enable new device functions?
TokuraTokura
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 14
SrO0
TiO20
LaO+
AlO2-
……
Novel Properties at Hetero-interfaces SrTiO3-LaAlO3
Critical thickness
Hetero-interfaces may enable novel coupling of properties!!
J. Mannhart et. al. 2006Augsburg Univ.
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 15
ERM for LithographyExamples
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 16
Resist: Unique Properties Immersion: Low leaching and
low surface energy EUV: Low outgassing, high
speed and flare tolerant
Imprint Materials Low viscosity Easy release
Directed Self-Assembly Resolution, LER, density,
defects, required shapes, throughput, registration and alignment
Emerging Lithography Applications
OR
RO
RO
OR RO
OR
OR
RO
OR
OR
RO
OR
Molecular Glasses and PAGS, Ober, Cornell
Macromolecular Architectures
Polymer Design, R. Allen, IBM
Directed di-block Copolymer SelfAssembly P. Nealey, U. Wisc.
Dendrimers, Frechet, UC-B
Sublithographic resolution and registration Ross, MIT
25 nm L/S
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 17
Design Pattern Requirements forDirected Self-Assembly
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 18
ERM for Front End ProcessingExample
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 19
Deterministic Doping
Selective Processes/Cleans
Macromolecules
Self-assembling materials and processes
Emerging FEP ApplicationsConductance variability reduced from 63% to 13% by controlling dopant numbers and roughly ordered arrays; Conductance due to implant positional variability within circular implant regions of the ordered array ~13%.
S D
Intel
From Shinada et. Al., “Enhancing Semiconductor Device Performance Using Ordered Dopant Arrays”, Nature, 437 (20) 1128-1131 (2005) [Waseda University]
1
10
100
1000
10000
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
# o
f ch
an
nel
ele
ctr
on
s
D. Herr, with data from the 2005 ITRS
~2014
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 20
ERM for InterconnectsExamples
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 21
10 100 10000
1
2
3
4
5
sidewall
grain boundary
bulk resistivity
Res
istiv
ity [µ
cm
]
Line width [nm]
Emerging Interconnect ApplicationsVias Multi-wall CNT Higher density Contact Resistance Adhesion
Interconnects Metallic Alignment Contact Resistance
Dielectrics Novel Polymer ILDs
Y. Awano, Fujitsu
H. Dai, Stanford Univ.
Quartz Crystal Step Alignment
Ref. 2005 ITRS, INT TWG, p. 22
ERMs Must Have Lower Resistivity
Cu
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 22
ERM for Assembly & PackagingExamples
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 23
Emerging Packaging Applications
Thermal Nanotubes
High Density Power Delivery Capacitors
Dielectrics: High K
Self Assembly
Interconnects: Nanotubes or Nanowires
Package Thermo-Mechanical
Substrate: Nanoparticles, Macromolecules
Adhesives: Macromolecules, Nanoparticles
Chip Interconnect: Nanoparticles
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 24
Environment, Safety, and Health
Metrology needed to detect the presence of nanoparticles
Research needed on potential undesirable bio-interactions of nanoparticles
Need Hierarchical Risk/Hazard assessment protocol Research, Development, Commercialization
Leverage Existing Research and Standards Activities
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 25
Emerging Metrology and Modeling Needs Metrology
Chemical and structural imaging and dimensional accuracy at the nm scale
Low dimensional material properties (Mapping) Nano-interface characterization (carbon) Simultaneous spin and electrical properties nm scale characterization of vacancies and defects
Modeling Materials and Interfaces Low dimensional material synthesis & properties Spin material properties Strongly correlated electron material properties
Long range and dynamic Integrated models and metrology (de-convolution of nm scale
metrology signals) Metrology and modeling must be able characterize
and predict performance and reliability
ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 26
Summary
ERM identifies materials with desirable properties that may enable potential solutions for ITWG applications
Significant challenges must be addressed for these materials to be viable for transfer to the ITWGs
Future: Refine and update ERM requirements Assess ERM progress toward meeting identified application
requirements Identify new ITWG application opportunities for ERM Identify new families of Emerging Research Materials