ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] December 3, 2010 Michael

ITRS Winter Conference 2010 Makuhari, Japan

Work in Progress: Not for Distribution

2010 ITRS

Emerging Research Materials

[ERM]

December 3, 2010

Michael Garner – IntelDaniel Herr – SRC



2010 ERM ParticipantsHiro Akinaga AISTJesus de Alamo MITTsuneya Ando Tokyo Inst. Tech Dimitri Antoniadis MITNobuo Aoi PanasonicKoyu Asai RenesasAsen Asenov U. of GlasgowYuji Awano Keio UnivDavid AwschalomUCSB.Kaustav Banerjee UCSBDaniel-Camille Bensahel ST MicroStacey Bent Stanford U.Kris Bertness NISTBill Bottoms NanonexusGeorge Bourianoff IntelRod Bowman SeagateAlex Bratkovski HPRobert Bristol IntelBernard Capraro IntelJohn Carruthers Port. State Univ.

An Chen Global Foundry

Eugene Chen Grandis

Zhihong Chen IBM

Toyohiro Chikyo NIMS

Byung Jin Cho KAIST

U-In Chung Samsung

Luigi Colombo TI

Hongjie Dai Stanford U.

Thibaut Devolder Univ. Paris Sud

Athanasios Dimoulas IMS GreeceCatherine Dubourdieu L. Mat. Genie Phys. & IBMJohn Ekerdt U. of TexasTetsuo Endoh Tohoku Univ.James Engstrom Cornell U.

Michael Flatte U. IowaSatoshi Fujimura TOKMichael Garner Intel Niti Goel IntelMichael GoldsteinIntelSuresh Golwalkar IntelWilfried Haensch IBMDan Herr SRCHiro Hibino NTT

Bill Hinsberg IBM

Judy Hoyt MIT

Jim Hutchby SRC

Ajey Jacob Intel

David Jamieson U. Melbourne

Ali Javey U.C. BerkeleyJames Jewett IntelBerry Jonker NRLXavier Joyeux IntelTed Kamins ConsultantZia Karim AIXTRON AG Takashi Kariya IbidenMasashi Kawaski Tohoku U.Leo Kenny IntelPhilip Kim Columbia U.Sean King IntelAtsuhiro Kinoshita ToshibaMichael Kozicki ASUMark Kryder CMUYi-Sha Ku ITRIHiroshi Kumigashira U. TokyoY.J. Lee Nat. Nano Lab TWLiew Yun Fook A-StarWei-Chung Lo ITRILouis Lome IDA Cons.Gerry Lucovsky NCSUMark Lundstrom Purdue U.Yale Ma SeagateBlanka Magyari-Kope Stanford U.Allan MacDonald Univ. of Texas

Prashant Majhi IntelWitek Maszara Global FoundryFrancois Martin LETIFumihiro Matsukura Tohoku U.Nobuyuki Matsuzawa SonyJennifer Mckenna IntelClaudia Mewes U. AlabamaYoshiyuki Miyamoto NECAndrea Morello UNSWBoris Naydenov U. StuttgartPaul Nealey U. Wisc.Kwok Ng SRCFumiyuki Nihey NECYoshio Nishi Stanford U.Dmitri Nikonov IntelYaw Obeng NISTChris Ober Cornell UnivKatsumi Ohmori. TOKYoshichika Otani Riken Inst.Jeff Peterson IntelAlexei Preobrajenski Lund Univ.Victor Pushparaj AMATGanapati Ramanath RPI Ramamoorthy Ramesh U.C. BerkeleyNachiket Raravikar IntelHeike Riel IBMDave Roberts NanteroMark Rodwell UCSBSven Rogge Delft U.Jae Sung Roh HynixTadashi Sakai ToshibaGurtej Sandhu MicronKrishna Saraswat Stanford U.Hideyki Sasaki Toshiba NanoanalysisShintaro Sato AISTAkihito Sawa AISTBarry Schechtman INSECThomas Schenkel LBNLSadasivan Shankar Intel

Mizuki Sekiya AISTMatt Shaw IntelTakahiro Shinada Waseda Univ.Michelle Simmons UNSWKaushal Singh AMATJon Slaughter EverspinBruce Smith RITTsung-Tsan Su ITRIMaki Suemitsu Tohoku U.Naoyuki Sugiyama TorayC-Y Sung IBMRaja Swaminathan IntelMichiharu Tabe Shizuoka U.Hidenori Takagi U. of TokyoShin-ichi Takagi U. of TokyoKoki Tamura TOK AmericaIan Thayne U. of GlasgowYoshihiro Todokoro NAISTYasuhide Tomioka AISTMark Tuominen U. MassPeter Trefonas DowMing-Jinn Tsai ITRIWilman Tsai Intel Ken Uchida Tokyo TechYasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLARainer Waser Aacken Univ.Jeff Welser IBM/NRIC.P. Wong GA Tech. Univ.H.S. Philip Wong Stanford U.Dirk Wouters IMECWen-Li Wu NISTHiroshi Yamaguchi NTTToru Yamaguchi NTTChin-Tien Yang ITRIHiroaki Yoda ToshibaJiro Yugami RenasasSC Zhang Stanford U.Yuegang Zhang LBNLVictor Zhirnov SRCPaul Zimmerman Intel



2010 Key Messages

• 2010: No Updates in ERM Chapter• Preparation for 2011 ERM Chapter

– Updating Material Progress– Critical Assessments of ERM– Identifying New ITWG Requirements for ERM – Transition Mature Materials to ITWGs– Workshops

• Memory Materials Workshop: Completed• Directed Self Assembly Litho Applications• Deterministic Doping: Completed• e-Workshops



Extending CMOS Alternate Channel Materials

Alternate Channel Materials

-Ge & III-V Compounds(Transition to FEP & PIDS)

-Nanowires

-Graphene

-Carbon Nanotubes

III-V Heterostructures(L. Samuelson, Lund Univ.)

A. Geim, Manchester U.

Assess

Materials Performance

Gate materials

Contacts

Interfaces

MOS

-Identify Novel Metrology & Modeling Needs

D. Zhou, USC



Beyond CMOS Materials & Interfaces

Assess• Ferromagnetic Materials, Dilute Magnetic Semiconductors• Complex Metal Oxides• Strongly Correlated Electron State Materials (FE, FM, FE & FM)• Molecules• Interfaces • Native Interconnects

Spin StateFerroelectric

Polarization

Negative Capacitance FET•Individual or Collective

Charge Based States Other Than Charge Only



Memory Materials Workshop

2010.11.30, Tsukuba, Japan (38 participants)Redox RAM: How can we experimentally verify that the Redox RAM operating mechanism?

STT-RAM: What materials or interface research should be performed to enable reduction of write energy by 10X?

Even with the combination of MgO-CoFeB (normally in-plane), interface control enables Perpendicular MTJ.



Lithography Novel Molecules

for Double Exposure

OR

RO

RO

OR RO

OR

OR

RO

OR

OR

RO

OR

Evolutionary Resist Design

-Positive Resist

Novel Molecules Resist

New Applications of Old Resist

Non-Chem Amp (193nm)

Negative Resist (EUV)

Molecular Glasses

Ober, Cornell

Hinsberg, IBM

Directed Self Assembly (DSA)

9DSA

Intermediate State

Tethered Anthracene

Bristol, Intel

Transition Evolutionary Resist to the Litho TWG

•Two DSA Workshops

•2011 Critical Assessment

•Defect Control



Front End Processing

• Zero Impact Cleans• Selective etch• Selective deposition

Ho, Javey, Nature Materials 2008

Monolayer Doping

•DSA Produces Order•Implant Delivers Dopants

Massive Parallel Dopant Control

Deterministic Doping Workshop Progress

Deterministic Doping Workshop

Berkeley, CA

November 12, 2010

Bosworth,

Ober, ACS NANO 2008

Patterning & doping

via DSA

)

50nm

n-MOS p-MOS

X

Y

Z

Inoue, Ultramicroscopy 2009

3D atom probe

Roy, AsenovScience 2005

3D simulation

Metrology and Modeling Progress



Interconnect Materials

Via

Wire

Via

Wire

Interconnects

- Carbon Nanotubes

-Graphene

Ultra-thin Barrier Layers

•Transition Zr Barriers to Interconnect TWG

•Novel sub 5nm materials

•SAMUltra low κ ILD

Novel Interconnects & Vias

Native Interconnect

MIRAI-Selete / TOSHIBA, APEX 3 (2010) 055002

Fujitsu Lab / CREST, APEX 3 (2010)



3D Interconnects

• Chip Attach Materials With Thermal Hierarchy– Electrical Interconnects– Nanosolders– Polymers

• Stress and Thermal Management Materials• Self Aligning Material Technologies

– Beyond surface tension…



Assembly & Package

• 1D Interconnects– Critical Assessment – Nanosolder, CNT & NW

• Polymers with Mechanical, Electrical & Thermal Properties

• Polymers With Zero Moisture Absorption• Ion Free or Immune Mold Compound• Management of III-V & Ge Device Stress



Hexagon of Assembly Material Requirements

• Highly coupled Material Properties• Apply novel materials to achieve optimal performance

CTE

ModulusFracture

Toughness

Functional

Properties

Moisture

ResistanceAdhesion

Examples

Thermal Interface Mat.

Mold Compound

Underfill

Adhesives

Epoxy



ESH Challenges• Materials needed to overcome significant

technical challenges– Low energy processes and new materials for low

energy integrated circuits– Few materials can meet requirements– Some materials have known hazards or

uncharacterized ESH properties– Stimulate ESH research in uncharacterized

materials– Good methods for materials ESH in Research,

Development & Manufacturing– Efficient use of materials



Summary

2010: No Updates to ERM Chapter

2011: Updates to ERM ProgressCritical Assessments of ERM for Specific

ApplicationsTargeted Workshops on ERM Progresse-Workshops for Material Updates

Documents

ITRS Winter Conference 2010 Makuhari, Japan Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] December 3, 2010 Michael