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N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc= 25 C unless otherwise noted

Parameter SymbolLimit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC= 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDMe

650

0.33

41

8

2

30

V

W

A

A

V

W/ C

1

GS

D

CEB SERIESTO-263(DD-PAK)

S

D

G

CEP SERIESTO-220

CEF SERIESTO-220F

S

D

G

Type VDSS RDS(ON) ID @VGS

CEP02N65D

CEF02N65D

650V

650V

6.9

6.9

2A

2A d

10V

10V

TO-220/263 TO-220F

0.22

27

8 d

2 d

CEP02N65D/CEB02N65D

CEF02N65D

CEB02N65D

Lead free product is acquired.

650V 6.9 2A 10V

http://www.cetsemi.comThis is preliminary information on a new product in development now .Details are subject to change without notice .

Rev 1. 2009.July

S

G

D

Operating and Store Temperature Range TJ,Tstg -55 to 150 C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter Symbol Limit Units

C/W

C/W

62.5

3RJC

RJA

4.5

65

PRELIMINARY

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Electrical Characteristics Tc= 25 C unless otherwise noted

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

6.9

2.5 4.5

-100

100

1

V

nA

nA

A

V

S

2

Gate Body Leakage Current, Reverse

On Characteristicsb

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltageb

Test Condition

VGS= 0V, I D= 250 A

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Typ Max

650

VDS= 650V, V GS= 0V

VGS= 30V, V DS= 0V

VGS= -30V, V DS= 0V

VGS= V DS, ID= 250 A

VGS= 10V, I D= 0.8A

VDS= 10V, I D= 0.6A

VDD= 300V, I D= 1.3A,

VGS= 10V, R GEN=4.7

VDS= 480V, I D= 1.3A,

VGS= 10V

VDS= 25V, V GS= 0V,f = 1.0 MHz

270

55

25

11

10

27

7.5

15.5

1

10

1.3

1.5

0.8

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

4

14.3

13

35.1

9.75

20.1

5.6

CEP02N65D/CEB02N65D

CEF02N65D

ISf

VSD

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

.

VGS= 0V, I S= 0.6Ag

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3

C,

Cap

acitance(pF)

Ciss

Coss

Crss

300

250

200

150

100

50

00 5 10 15 20 25

RDS(ON

),N

ormalized

RDS(ON),On-Resistance(Ohms)

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variationwith Temperature

VTH,

Normalized

Gate-SourceThresholdVolta

ge

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variationwith Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VDS=VGS

ID=250A

-50 -25 0 25 50 75 100 125 150

IS,

Source-draincurrent(A)

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

0.2 0.6 1.0 1.4

10-1

10-2

100

2.21.8

VGS=0V

CEP02N65D/CEB02N65D

CEF02N65D

3.0

2.5

2.0

1.5

1.0

0.5

0.0

VGS=10V

ID=0.8A

-100 -50 0 50 100 150 200

ID,

DrainCurrent(A)

ID,

DrainCurrent(A)

0 5 10 15 2520

1.5

0.0

1.2

0.9

0.6

0.3

VGS=6V

VGS=5V

VGS=10,9,8V

0.4

0.3

0.2

0.1

0.01 2 3 4

0.5

5 6 7

TJ=125 C-55 C

25 C

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4

VGS,

GatetoSourceVoltage(V)

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

ID,

DrainCurrent(A)

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

t

V

V

t

td(on)

OUT

IN

on

r

10%

td(off)

90%

10% 10%

50% 50%

90%

toff

tf

90%

PULSE WIDTH

INVERTED

VDD

R

D

V

V

R

S

V

G

GS

IN

GEN

OUT

L

r(t),NormalizedEffective

TransientThermalImpedance

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve

10

-2

PDM

t1t2

1. R cJC(t)=r (t) * R cJC2. R cJC=See Datasheet3. TJM-TC= P* R cJC(t)4. Duty Cycle, D=t1/t2

100

Single Pulse

0.01

10-1

10-2

10

3

10

4

10

2

10

1

10

0

10

-1

0.02

0.05

0.1

0.2

D=0.5

10

8

6

4

2

00 3 6 9 18

VDS=480V

ID=1.3A

12 15

4

CEP02N65D/CEB02N65D

CEF02N65D10

1

100

10-1

10-2

10-3

103

102

101

100

1s

100ms

10ms

DC

Single Pulse

TA=25 CTJ=150 C

1ms

RDS(ON)Limit