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14 July 2010, ITRS Summer Meeting, San Francisco, CA 1 DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Summer Meeting On behalf of the RF and AMS ITWG Jack Pekarik IBM Essex Junction, VT [email protected]

14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors

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Page 1: 14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors

14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH

2010 International Technology Roadmap for Semiconductors

Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications

Working Group

ITRS Summer Meeting

On behalf of the RF and AMS ITWG

Jack PekarikIBM

Essex Junction, [email protected]

Page 2: 14 July 2010, ITRS Summer Meeting, San Francisco, CA 1DRAFT WORK IN PROGRESS --- DO NOT PUBLISH 2010 International Technology Roadmap for Semiconductors

14 July 2010, ITRS Summer Meeting, San Francisco, CA 2DRAFT WORK IN PROGRESS --- DO NOT PUBLISH

2010 OrganizationChair: Jack Pekarik, IBM 41 Members in 2010 / 39 Members in 2009

Co-chairs: Jan-Erik Mueller, Infineon 25 NA, 8 EU, 8 AP

Sebastian Liau, ITRI

Margaret Huang, Freescale

Editor: Herbert Bennett, NIST

• Subgroup CMOS Snezan Jenai, Infineon

• Subgroup Bipolar Pascal Chevalier, ST

• Subgroup Passives Sebastian Liau, ITRI

• Subgroup PA Peter Zampardi, Skywork

• Subgroup mm-Wave Tony Immorlica, BAE Systems

• Subgroup MEMS Dave Howard, Jazz

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2010 Membership

* Inactive this year

Name Affiliation Name Affiliation

Pascal Ancey STMicroelectronics Yukihiro Kiyota Sony Corporation,

Herbert S. Bennett NIST Sebastian Shyi-Ching Liau Industrial Technology Research Institute

Volker Blaschke Jazz Semiconductor Ginkou Ma Industrial Technology Research Institute

Bobby Brar Teledyne Scientific and Imaging Jan-Erik Mueller Infineon Technologies

Wayne Burger Freescale Semiconductor, Inc Takashi Nakamura Omron Corp

Pascal Chevalier STMicroelectronics Hansu OH Samsung Electronics Co., Ltd.

David Chow HRL Douglas Pattullo

Julio Costa RFMD Jack Pekarik IBM Corporation

Mattias Dahlstrom IBM Corporation Jean-Olivier Plouchart IBM Corporation

Stefaan Decoutere IMEC Ed Preisler Jazz Semiconductor

Jonathan Hammond RFMD Marco Racanelli Jazz Semiconductor

Erwin Hijzen NXP Semiconductors, Mark Rosker DARPA

Digh Hisamoto Hitachi Ltd., Bernard Sautreuil STMicroelectronics

Dave Howard Jazz Semiconductor Tony Stamper IBM Corporation

W. Margaret Huang Freescale Semiconductor, Inc Sorin Voinigescu University of Toronto

Matthias Illing Bosch Dawn Wang IBM Corporation

Anthony A. Immorlica Jr. BAE Systems, Albert Wang University of California

Jay John Freescale Semiconductor, Inc Dennis Williams WinSemi

Alex Kalnitsky TSMC Peter Zampardi Skyworks Solutions, Inc

Mattan Kamon Coventor, Inc. Herbert Zirath Chalmers University

Tom Kazior Raytheon RF Components

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Wireless Working Group Key Considerations

Traditional Roadmap Drivers:• Cost (scaling, die size, part count)• Power consumption• Chip functionality

Non-traditional Roadmap Drivers:• Government regulations determining system spectrum and specifications• Standards and protocols drive frequencies, power and performance• RF module form factor (size and height requirements)• Color coding “Manufacturing solutions exist” does not imply product

volume shipment per ITRS definition

Cost / Performance Drives Integration:• Multi-band & multi-mode system applications drive MtM focus

(MEMs, embedded passives, filters, switch integration)• Signal isolation and integrity lead to needs for clear FoMs & metrology• Analog shrink drives MtM design innovations but FoMs & metrology lag

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Wireless ITWG Background

• Scope of work remains the same; wireless transceiver IC as technology driver, with active contribution to ITRS-defined More than Moore thrust.

• Chapter subdivided into <10GHz applications and mm-wave applications.

• 5 technology subgroups cover <10GHz applications: CMOS, bipolar, passives, power amplifier and MEMs. A mm-wave subgroup focuses on higher frequency applications, considering power and low-noise using III-V and silicon-based devices.

• Some portions of the roadmap reflect prototype capability more than volume production. Production requires applications (especially emerging mm-wave connectivity and imaging) that currently lag technology capability.

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Scope of Wireless Chapter

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GSMCDMA

ISM

PDCGPSSAT

Radio

DCSPCS

DECTCDMA

WLAN802.11b/gHomeRFBluetooth

SATTV

WLAN802.11a

SAT TVWLAN

HyperlinkUWB

LMDSWLAN

AUTORADAR

ContrabandDetection

All WeatherLanding

94 GHz77 GHz28 GHz10 GHz5 GHz2 GHz0.8 GHz

GSMCDMA

ISM

PDCGPSSAT

Radio

DCSPCS

DECTCDMA

WLAN802.11b/g

Bluetooth

SATTV Tuner

WLAN802.11aWiMAX

SAT TVWLAN

HyperlinkUWB

LMDSWLAN

AUTORADAR

All WeatherLanding

0.094-1 THz77 GHz28 GHz10 GHz5 GHz2 GHz0.4 GHz

Si –RF CMOSSi –RF CMOS

SiC -MESFETSiC -MESFET

GaN -HEMTGaN -HEMT

SiGe –HBT, BiCMOSSiGe –HBT, BiCMOS

GaAs -HBT, PHEMTGaAs -HBT, PHEMT

InP –HBT, HEMT GaAs MEHMTInP –HBT, HEMT GaAs MHEMT

ZigBee

ImagingSpectroscopy

60GHzWPAN

Wireless Communication Application Spectrum

WCDMA

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RF & AMS for Wireless plans

• CMOS: Revise data for matching & fMAX, to better-match published data, acknowledge that more companies offer more HV & analog devices.

• BIPOLAR: Revisit HS-PNP fT, BVCEO.

• PA: No changes required.

• Passives: No changes required. Many considerations for 2011.

• MEMs: No changes required.Investigating whether to spin-off MEMs into a new chapter for 2011– Discussing with iNEMI and ITRS (Assy & Pkg, Design)

• mmWave: Consider delay of GaN & perhaps earlier retirement of some InP technologies; review timing of gate length reductions.

• General: Provide clear definitions of FOMs used and encourage publication of data using these methods.

This year’s focus: Few changes for 2010, full-chapter revision for 2011