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Transistor Modeling. ENGI 242 ELEC 222. Hybrid Equivalent Circuit for BJT. h-parameter Model for Common Emitter. Parameters from the spec sheet ( x = lead based on circuit configuration ): h 11 = h ix h 12 = h rx h 21 = h fx h 22 = h ox h rx and h fx are dimensionless ratios - PowerPoint PPT Presentation
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Transistor Modeling
ENGI 242ELEC 222
January 2004 ENGI 242/ELEC 222 2
January 2004 ENGI 242/ELEC 222 3
Hybrid Equivalent Circuit for BJT
1 11 12 1
2 21 22 2
V h h I =
I h h V
January 2004 ENGI 242/ELEC 222 4
h-parameter Model for Common Emitter
Parameters from the spec sheet (x = lead based on circuit configuration):h11 = hix
h12 = hrx
h21 = hfx
h22 = hox
hrx and hfx are dimensionless ratioshix is an impedance <>hox is an admittance <S>
January 2004 ENGI 242/ELEC 222 5
Short Circuit Input Impedance
January 2004 ENGI 242/ELEC 222 6
Open Circuit Reverse Transfer Ratio
January 2004 ENGI 242/ELEC 222 7
Short Circuit Forward Transfer Ratio
January 2004 ENGI 242/ELEC 222 8
Open Circuit Output Admittance
Transistor ModelingHybrid Model Pi
ENGI 242ELEC 222
January 2004 ENGI 242/ELEC 222 10
HYBRID MODEL PI
January 2004 ENGI 242/ELEC 222 11
HYBRID MODEL PI PARAMETERS
• Parasitic Resistances• rb = rb’b = ohmic resistance – voltage drop in base region
caused by transverse flow of majority carriers, 50 ≤ rb ≤ 500
• rc = rce = collector emitter resistance – change in Ic due to change in Vc, 20 ≤ rc ≤ 500
• rex = emitter lead resistance – important if IC very large, 1 ≤ rex ≤ 3
January 2004 ENGI 242/ELEC 222 12
HYBRID MODEL PI PARAMETERS
• Parasitic Capacitances• Cje0 = Base-emitter junction (depletion layer) capacitance,
0.1pF ≤ Cje0 ≤ 1pF• C0 = Base-collector junction capacitance, 0.2pF ≤ C0 ≤
1pF• Ccs0 = Collector-substrate capacitance, 1pF ≤ Ccs0 ≤ 3pF• Cje = 2Cje0 (typical) 0 =.55V (typical) F = Forward transit time of minority carriers, average
of lifetime of holes and electrons, 0ps ≤ F ≤ 530ps
January 2004 ENGI 242/ELEC 222 13
HYBRID MODEL PI PARAMETERS
• r = rb’e = dynamic emitter resistance – magnitude varies to give correct low frequency value of Vb’e for Ib
• r = rb’c = collector base resistance – accounts for change in recombination component of Ib due to change in Vc which causes a change in base storage
• c = Cb’e = dynamic emitter capacitance – due to Vb’e stored charge
• c = Cb’c = collector base transistion capacitance (CTC) plus Diffusion capacitance (Cd) due to base width modulation
• gmV = gmVb’e = Ic – equivalent current generator
January 2004 ENGI 242/ELEC 222 14
Hybrid Pi Relationships
Cm
T
T
Cm
C B
I g =
V k T
V = = 26mV @ 300 Kq
I g =
26mV (26mV) ( ) 26mV
r = = I I
= gm r
πc m π
π
β v i = = g v
r
January 2004 ENGI 242/ELEC 222 15
Hybrid Pi Relationships
January 2004 ENGI 242/ELEC 222 16
HYBRID MODEL PI MID BAND
January 2004 ENGI 242/ELEC 222 17
HYBRID MODEL PI HIGH FREQ.
January 2004 ENGI 242/ELEC 222 18
Common Emitter Amplifier
January 2004 ENGI 242/ELEC 222 19
Common Emitter Amplifier – DC Bias Model
January 2004 ENGI 242/ELEC 222 20
Common Emitter Amplifier - Complete Hybrid PI
January 2004 ENGI 242/ELEC 222 21
Mid Band Hybrid PI Common Emitter
January 2004 ENGI 242/ELEC 222 22
Equivalent Circuit to find ZO
January 2004 ENGI 242/ELEC 222 23
High Frequency Hybrid PI CE Amp
January 2004 ENGI 242/ELEC 222 24
Common Emitter Amplifier
January 2004 ENGI 242/ELEC 222 25
CE Amplifer Example output
January 2004 ENGI 242/ELEC 222 26
Common Emitter Amplifier
January 2004 ENGI 242/ELEC 222 27
CE Amplifer Example output
January 2004 ENGI 242/ELEC 222 28
Emitter Follower
January 2004 ENGI 242/ELEC 222 29
Emitter Follower
January 2004 ENGI 242/ELEC 222 30
Emitter Follower
January 2004 ENGI 242/ELEC 222 31
Emitter Follower
January 2004 ENGI 242/ELEC 222 32
Emitter Follower
January 2004 ENGI 242/ELEC 222 33
Common Base
January 2004 ENGI 242/ELEC 222 34
Common Base