Radar and EW Radar and EW

Sub-Systems Sub-Systems

Saurabh SinhaSaurabh SinhaSaturday 22 April 2023

Departement Elektriese, Elektroniese & Rekenaar-IngenieursweseDepartment of Electrical, Electronic & Computer EngineeringKgoro ya Merero ya Mohlagase, Elektroniki & Bointšinere bja Khomphutha

Carl and Emily Fuchs Institute for Microelectronics

CEFIMFounded in 1981 after receiving a grant from

Carl and Emily Fuchs(1972 to 1981 Institute for Microstructures)

Director: Prof. Monuko du PlessisSenior Lecturer: Dr Saurabh SinhaLecturers: Mr Johan Schoeman

Mr Jannes Venter

Researcher: Mr Alfons Bogalecki

Project manager: Mr Gerrie Mostert

Postgraduatestudents(PhD and MEng): 15

CEFIMCarl and Emily Fuchs Institute for

Microelectronics

Postgraduate Courses

EIN 732 Introduction to Research Prof. JAG Malherbe

EME 732 Analogue Electronic DesignProf. M. du Plessis

EDG 780 Digital Electronic Design

Dr S Sinha

Mr PJ Venter

Mr J Schoeman

DPSS, CSIREMK 732 Communication Electronics

Prof. M. du Plessis

EEY 890 Dissertation (MSc / MEng)

EIN 990 Thesis (PhD / PhD (Eng))

Focus Areas & International Research Partners

CMOS / Si device manufacture Georgia Tech, Atlanta, USA

RF MEMS and mm wave IC’s IMT, Bucharest, Romania Dresden University of Technology, Dresden, Germany University of Electronic Sciences and Technology, China

MEMS simulation and manufacture IMTEK, University of Freiburg, Germany

Facilities

IC characterization equipment (RF lab)

Optical characterisation of sources and detectors

Semiconductor processing facility

Components of Electronic Warfare

A [CMP] Wafer

Europractice (Belgium)MOSIS (USA)CMP (France)

AMS AMI

TSMCUMCIHPIBM

CSMCOMMIC

STIC FOUNDRIES

Prototyping○ IC Foundries

CEFIM

Research Methodology

Integrated-Circuit Level Modelling

ReceivedSignal

RecoveredData

RecoveredData

gclreal1

gclimg1

VCO

Voltage-ControlledOscillator=inphse1

VCO

Voltage-ControlledOscillator1- quad1

tanh

TrigonometricFunction1

tanh

TrigonometricFunction

1e10

den(s)

Transfer Fcn

PulseGenerator1

PulseGenerator

Product9

Product8

Product7

Product6

Product5

Product11

Product10

1s

Integrator1

1s

Integrator

-K-

Gain2

-K-

Gain1

-K-

Gain

-1

Constant3

Add5

Add3

Add1

Despreading Demodulation Bit Recovery

Phase Detector

Mathematical/Ideal Modelling

Revise Model

Apply Findings

TANNER EDA

MATLAB

Research Tools

• Tanner EDA (~<2009)• Mentor Graphics (>2008)

– IC Flow– Euro 50/group_licence

• Cadence (~>2008)– AMS, Virtuoso, etc

• ADS (>2008)

Europractice (Belgium)CMP (France)MOSIS (USA)

mname drain gate source bulk model [1=L] [w=W] [ad=Ad] [pd=Pd] [as=As] [ps=Ps] [nrd=Nrd] [nrs=Nrs] [rdc=Rdc] [rsc=Rsc] [rsh=Rsh] [geo=Geo] [M=m] [tables=T]

3rd Party IP Blocks

System-Level Modelling○ System-Level Tools

& DRC

Conceptual Design

SIMULINK

First-principlesCommunications ToolboxSignal Processing Toolbox

University of Pretoria○ Short Courses

• Tanner Course (with P.J. Venter)– Product Registered– Events in 2007 & 2008– Phase-out: 2009

• RF IC Design Course (with M. du Plessis)– Product Registered

• OrCAD Layout Plus Course (with S. Esterhuyse)– Product Registered

Future:

• Mentor Graphics (IC Flow & EldoRF) Course• mm-Wave Radio Design Course (with D. Foty)

University of Pretoria○ Contract Research / Research Studies

• Grintek Ewation– 1 Project (2 years)

• A 5 - 8 GHz SiGe CMOS Voltage Controlled Oscillator with Reduced Phase Noise

• Defence, Peace, Safety & Security (DPSS), CSIR– Armscor (Origin: DoD) – 3 Projects (2 years each)

• A 5 GHz Voltage Controlled Oscillator (VCO) with 360° Variable Phase Outputs

• Reducing Jitter in High-Speed Serial Links• A Linear SiGe BiCMOS LNA for Wide Band

Receivers

A 5 – 8 GHz SiGe CMOS Voltage ControlledOscillator (VCO) with Reduced Phase Noise (1)

Principal requirements: High quality (Q) factor Low 1/f active noise component

Phase noise determined by: Q-factor of the resonator Q-factor of the varactor diode Active device use for the oscillating transistor Power supply noise External tuning voltage supply noise

L1 L2

VDD

VTUNE

C1 C2D1 D2

T1 T2

IBIAS

Cp vs

+

-

A 5 – 8 GHz SiGe CMOS VCO with Reduced Phase Noise (2)

Parameter Typical Value Units

Frequency Range 4.0 – 8.0 GHz

Power Output 5 dBm

SSB Phase Noise @ 100 KHz Offset

-100 dBc/Hz

SSB Phase Noise @ 10 KHz Offset

-75 dBc/Hz

Supply Current (Vcc +5V) 75 (max) mA

Tune Port Leakge Current (Vtune +15V)

10 (max) µA

Frequency Drift Rate 0.8 MHz/oC

Student: T.A.K. OppermanSubmitted dissertation (Nov. 2008)

LEDGER Programme

A 5 GHz Voltage Controlled Oscillator (VCO) with 360° Variable Phase Outputs (1)

A 5 GHz VCOwith 360° Variable Phase Outputs (2)

• This beam formation capability of antenna arrays is achieved by tuning the phase and amplitude of the transmitting signal, individually for each antenna element. (Note that no mechanical movement is required!)

A beam-forming back end and corresponding antenna pattern (Gueorguiev et al., A CMOS transmitter for 802.11a WLAN with beam forming capability, Circuits and Systems 2005)

0 0.5 1 1.5 2 2.5 34.2

4.4

4.6

4.8

5

5.2

5.4x 10

9

Vtune (V)

Out

put F

requ

ency

(H

z)

Tuning characteristic of the VCO

Simulation Results – Design spec. 1: VCO

• Simulation results show that this design specification has been achieved.

Out

put F

requ

ency

(G

Hz)

A 5 GHz VCO with 360° Variable Phase Outputs (3)

Circuit Realization – Design spec. 2 and 3: Phase shifter

• Gilbert Mixer used as a Variable Gain Amplifier (VGA).• The current of the mixers are combined to obtain the vector sum.• The differential architecture of the Mixer requires the transistors used

as current sources to be closely matched.

Vcontrol-

Vcontrol+

Isum- Isum+

Vosc-

Vosc+

Gilbert Mixer

Gilbert Mixer

Vector Sum

90°

VGA

VGA

+

In-phase

Quadrature

Vcontrol_I

Vcontrol_Q

+ -

+ -

A 5 GHz VCO with 360° Variable Phase Outputs (4)

Simulation Results – Design spec. 2 and 3: Phase shifter

• The quadrature amplitude was held constant while the in-phase voltage amplitude was swept.

• The phase shift was then measured.

A 5 GHz VCO with 360° Variable Phase Outputs (5)

A 5 GHz VCO with 360° Variable Phase Outputs (6)

0

12

U 2

012

U 3

012

U 4

0

12

U 5

0

R 11 0 k

R 21 0 k

R 31 0 k

R 41 0 k

0

0

0

0

T2Z 0 = 5 0

12

U 6

0

12

U 7

0

0

0

12

U 8

0

12

U 9

0

R 51 0 k

R 61 0 k

R 71 0 k

R 81 0 k

0

0

0

0

123456789

J 2

C O N 9

T4Z 0 = 5 0

0

0

T3Z 0 = 5 0

0

0

1 23 45 67 8

J 4

J U M P E R 4

T6

Z 0 = 5 0

0

0

0

T8

Z 0 = 5 0

0

T7

Z 0 = 5 0

SW1

0

0

T5

Z 0 = 5 0

V C C

0

0

V C C

V C C

SW2

V C C

V C C

V C C

V C C

V C C

V C C

1 23 4

J P 1

J U M P E R 2

1 2

J 3

J U M P E R 1

GN

D1

Ph

aseA

2IC

ont

rolA

3Q

Co

ntr

olA

4IC

ont

rolB

5P

has

eB6

QC

on

trol

B7

90d

eg8

270

deg

9G

ND

10

VD

D2

11

180

deg

12

V t u n e 21 3

0 d e g1 4

C M 11 5

C M 21 6

V D D 41 7

I o +1 8

I o -1 9

V 1 +2 0

V 1 -2 1

G N D2 2

V 2 +2 3

V 2 -2 4

V1

QA

25

Ph

Se

lA0

26

Ph

Se

lA1

27

Ph

Se

lA2

28

Ph

Se

lA3

29

V1

IA3

0

V1

QB

31

Ph

Se

lB0

32

Ph

Se

lB1

33

Ph

Se

lB2

34

Ph

Se

lB3

35

V1

IB3

6

V D D 33 7V B ia s3 8G N D3 9Q C o n t ro lC4 0

P h a s e C4 2

I C o n t ro lC4 1

Q C o n t ro lD4 3I C o n t ro lD4 4P h a s e D4 5V D D 14 6V t u n e 14 7V C o n t ro l-4 8

QFN48

U 1 0Q V C O

1 23 4

J P 2

J U M P E R 2

1 23 4

J P 3

J U M P E R 2

T1Z 0 = 5 0

1 23 4

J P 4

J U M P E R 2

C 21 n

V C C

0

12

J 6C O N 2

0

0

1

2

C O 5S M A

0

C 14 . 7 u

1

2

C O 6S M A

0

1

2

C O 7S M A

12345678

J 1

C O N 8

1

2

C O 8S M A

1

2

C O 4S M A

12

J 5

P C O N

1

2

C O 3S M A

V C C

1

2

C O 2S M A

0

1

2

C O 1S M A

0

A 5 GHz VCOwith 360° Variable Phase Outputs (7)

A 5 GHz VCO with 360° Variable Phase Outputs (8)

A 5 GHz VCOwith 360° Variable Phase Outputs (9)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16-350

-300

-250

-200

-150

-100

-50

0

Preset

Pha

se s

hift

( d

egre

es )

Measured phase shiftExpected phase shift

A 5 GHz VCO with 360° Variable Phase Outputs (10)

• High bandwidth

• Standards: – Sonet OC-192 (10 Gb/s)– USB 2.0 (480 Mb/s)– IEEE 802.3 (1 Gb/s)– IEEE 1394b (3.2 Gb/s)

• Component interconnects– RocketIO (2.5 Gb/s)– PCI-Express (2.5 Gb/s)

Data retiming

SerialiserPre-

emphasisEqualisation

Clock and data

recovery

De-serialiser

N d

ata

line

s

N d

ata

line

s

Transmitter ReceiverMedia

Reducing Jitter in High-Speed Serial Links

FIR PE Channel +

Desired signal

Tra

nsm

itted

si

gnal

Adaptive algorithm

Coefficient update

A Linear SiGe BiCMOS LNA for Wide Band Receivers

Technology Bandwidth (GHz) Gain (dB) NF (dB) S11 (dB) Power

(mW)

SiGe BiCMOS 3 – 10 20 2.5 – 4.5 < -10 30

0.18 μmCMOS 3 – 10 13 – 16 3.1 – 6 < -8 11.9

GaAs HBT 1 – 10 22.5 3 – 3.6 < -10 55

mm-Wave Spectrum

mm-Wave Radio Design (1)

Chip 1: RF SiGe HBT, IF CMOS; Chip 2 – Baseband analog & digital (all CMOS)

mm-Wave Radio Design (2)

mm-Wave Radio Design (3)

Publications (Focus area: RF IC)

Publications 2006 2007 2008 Total

Conferences 3 6 4 13

Journals 4 0 1 5

Posters 0 0 0 4

*Growth in postgraduate students*PDIs

Future Waves

Undergraduate:• EW-Series of final year projects

– Emphasis on design

Postgraduate:• EW IC sub-systems

– Research techniques design methods– Prototyping and verification

Questions and Feedback

Saurabh SinhaCarl & Emily Fuchs Institute for Microelectronics (CEFIM) 2-11

Dept. of Electrical, Electronic & Computer Engineering (www.ee.up.ac.za)

University of Pretoria (www.up.ac.za) Tel: (012) 420-2950 Cell: (082) 777-6893

E-mail: ssinha@ieee.org | Web: http://cefim.ee.up.ac.za

Hmm…I see….

IC Design