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©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FSB50660SF, FSB50660SFT Rev. C6

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April 2014

FSB50660SF, FSB50660SFT

Motion SPM® 5 SuperFET® Series

Features• UL Certified No. E209204 (UL1557)

• 600 V RDS(on) = 700 mMax SuperFET MOSFET 3-Phase Inverter with Gate Drivers and Protection

• Built-in Bootstrap Diodes Simplify PCB Layout

• Separate Open-Source Pins from Low-Side MOS-FETS for Three-Phase Current-Sensing

• Active-HIGH Interface, Works with 3.3 / 5 V Logic,Schmitt-trigger Input

• Optimized for Low Electromagnetic Interference

• HVIC Temperature-Sensing Built-in for TemperatureMonitoring

• HVIC for Gate Driving and Under-Voltage Protection

• Isolation Rating: 1500 Vrms / 1 min.

• RoHS Compliant

Applications• 3-Phase Inverter Driver for Small Power AC Motor

Drives

Related Source• RD-402 - Reference Design for Motion SPM 5 Super-

FET Series

• AN-9082 - Motion SPM5 Series Thermal Performanceby Contact Pressure

• AN-9080 - User’s Guide for Motion SPM 5 Series V2

General DescriptionThe FSB50660SF/SFT is an advanced Motion SPM® 5module providing a fully-featured, high-performanceinverter output stage for AC Induction, BLDC and PMSMmotors such as refrigerators, fans and pumps. Thesemodules integrate optimized gate drive of the built-inMOSFETs(SuperFET® technology) with to minimize EMIand losses, while also providing multiple on-moduleprotection features including under-voltage lockouts andthermal monitoring. The built-in high-speedHVIC requires only a single supply voltage andtranslates the incoming logic-level gate inputs to thehigh-voltage, high-current drive signals required toproperly drive the module's internal MOSFETs.Separate open-source MOSFET terminals are availablefor each phase to support the widest variety of controlalgorithms.

Package Marking & Ordering Information

Device Device Marking Package Packing Type Quantity

FSB50660SF 50660SF SPM5P-023 Rail 15

FSB50660SFT 50660SFT SPM5N-023 Rail 15

FSB50660SF FSB50660SFT

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Absolute Maximum Ratings

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

Thermal Resistance

Total System

1st Notes:

1. For the measurement point of case temperature TC, please refer to Figure 4.

2. Marking “ * “ is calculation value or design factor.

Symbol Parameter Conditions Rating Unit

VDSS Drain-Source Voltage of Each MOSFET 600 V

*ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 3.1 A

*ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 2.3 A

*IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 s 8.1 A

*IDRMS Each MOSFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.6 Arms

*PD Maximum Power Dissipation TC = 25°C, For Each MOSFET 14.2 W


VCC Control Supply Voltage Applied Between VCC and COM 20 V

VBS High-side Bias Voltage Applied Between VB and VS 20 V

VIN Input Signal Voltage Applied Between IN and COM -0.3 ~ VCC + 0.3 V


VRRMB Maximum Repetitive Reverse Voltage 600 V

* IFB Forward Current TC = 25°C 0.5 A

* IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A


RJC Junction to Case Thermal ResistanceEach MOSFET under Inverter Oper-ating Condition (1st Note 1) 8.8 °C/W


TJ Operating Junction Temperature -40 ~ 150 °C

TSTG Storage Temperature -40 ~ 125 °C

VISO Isolation Voltage60 Hz, Sinusoidal, 1 Minute, Con-nect Pins to Heat Sink Plate

1500 Vrms

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Pin descriptions

Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)1st Notes:

3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM® 5 product. External connections should be made asindicated in Figure 3.

Pin Number Pin Name Pin Description

1 COM IC Common Supply Ground

2 VB(U) Bias Voltage for U-Phase High-Side MOSFET Driving

3 VCC(U) Bias Voltage for U-Phase IC and Low-Side MOSFET Driving

4 IN(UH) Signal Input for U-Phase High-Side

5 IN(UL) Signal Input for U-Phase Low-Side

6 N.C No Connection

7 VB(V) Bias Voltage for V-Phase High Side MOSFET Driving

8 VCC(V) Bias Voltage for V-Phase IC and Low Side MOSFET Driving

9 IN(VH) Signal Input for V-Phase High-Side

10 IN(VL) Signal Input for V-Phase Low-Side

11 VTS Output for HVIC Temperature Sensing

12 VB(W) Bias Voltage for W-Phase High-Side MOSFET Driving

13 VCC(W) Bias Voltage for W-Phase IC and Low-Side MOSFET Driving

14 IN(WH) Signal Input for W-Phase High-Side

15 IN(WL) Signal Input for W-Phase Low-Side

16 N.C No Connection

17 P Positive DC-Link Input

18 U, VS(U) Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving

19 NU Negative DC-Link Input for U-Phase

20 NV Negative DC-Link Input for V-Phase

21 V, VS(V) Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving

22 NW Negative DC-Link Input for W-Phase

23 W, VS(W) Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving

(1) COM

(2) VB(U)

(3) VCC(U)

(4) IN (UH)

(5) IN (UL)

(6) N.C

(7) VB(V)

(8) VCC(V)

(9) IN (VH)

(10) IN (VL)

(11) VTS

(12) V B(W)

(13) VCC(W)

(14) IN (WH)

(15) IN (WL)

(16)

(17) P

(18) U, VS(U)

(19) N U

(20) NV

(21) V, VS(V)

(22) N W

(23) W, VS(W)

COM

VCC

LIN

HIN

VB

HO

VS

LO

COM

VCC

LIN

HIN

VB

HO

VS

LO

VTS

COM

VCC

LIN

HIN

VB

HO

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N.C

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Electrical Characteristics (TJ = 25°C, VCC = VBS = 15 V unless otherwise specified.)

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

2nd Notes:

1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than thisvalue considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case.

2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the fieldapplications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.

3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA testcircuit that is same as the switching test circuit.

4. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.

5. Built-in bootstrap diode includes around 15Ω resistance characteristic. Please refer to Figure 2.

Symbol Parameter Conditions Min Typ Max Unit

BVDSSDrain - Source Breakdown Voltage

VIN = 0 V, ID = 1 mA (2nd Note 1) 600 - - V

IDSSZero Gate VoltageDrain Current

VIN = 0 V, VDS = 600 V - - 1 mA

RDS(on)Static Drain - SourceTurn-On Resistance

VCC = VBS = 15 V, VIN = 5 V, ID = 1.5 A - 600 700 m

VSDDrain - Source DiodeForward Voltage

VCC = VBS = 15 V, VIN = 0 V, ID = -1.5 A - - 1.1 V

tON

Switching Times

VPN = 300 V, VCC = VBS = 15 V, ID = 1.5 AVIN = 0 V 5 V, Inductive Load L = 3 mHHigh- and Low-Side MOSFET Switching(2nd Note 2)

- 950 - ns

tOFF - 820 - ns

trr - 120 - ns

EON - 130 - J

EOFF - 5 - J

RBSOAReverse Bias Safe Oper-ating Area

VPN = 400 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS,TJ = 150°CHigh- and Low-Side MOSFET Switching (2nd Note 3)

Full Square


IQCC Quiescent VCC CurrentVCC = 15 V, VIN = 0 V

Applied Between VCC and COM - - 200 A

IQBS Quiescent VBS CurrentVBS = 15 V, VIN = 0 V

Applied Between VB(U) - U, VB(V) - V, VB(W) - W

- - 100 A

UVCCD Low-Side Under-VoltageProtection (Figure 8)

VCC Under-Voltage Protection Detection Level 7.4 8.0 9.4 V

UVCCR VCC Under-Voltage Protection Reset Level 8.0 8.9 9.8 V

UVBSD High-Side Under-VoltageProtection (Figure 9)

VBS Under-Voltage Protection Detection Level 7.4 8.0 9.4 V

UVBSR VBS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V

VTSHVIC Temperature Sens-ing Voltage Output

VCC = 15 V, THVIC = 25°C (2nd Note 4) 600 790 980 mV

VIH ON Threshold Voltage Logic HIGH LevelApplied between IN and COM

- - 2.9 V

VIL OFF Threshold Voltage Logic LOW Level 0.8 - - V


VFB Forward Voltage IF = 0.1 A, TC = 25°C (2nd Note 5) - 2.5 - V

trrB Reverse Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns

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Recommended Operating Condition

Figure 2. Built-in Bootstrap Diode Characteristics (Typical)

Symbol Parameter Conditions Min. Typ. Max. Unit

VPN Supply Voltage Applied Between P and N - 300 400 V

VCC Control Supply Voltage Applied Between VCC and COM 13.5 15.0 16.5 V

VBS High-Side Bias Voltage Applied Between VB and VS 13.5 15.0 16.5 V

VIN(ON) Input ON Threshold VoltageApplied Between IN and COM

3.0 - VCC V

VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V

tdeadBlanking Time for PreventingArm-Short

VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C 1.0 - - s

fPWM PWM Switching Frequency TJ 150°C - 20 - kHz

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 150.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0Built-in Bootstrap Diode V

F-I

F Characteristic

I F [

A]

VF [V]

Tc=25°C

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Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters

3rd Notes:

1. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.

2. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.

3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C1, C2and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current.

Figure 4. Case Temperature Measurement

3rd Notes:

4. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement.

Figure 5. Temperature Profile of VTS (Typical)

HIN LIN Output Note

0 0 Z Both FRFET Off

0 1 0 Low side FRFET On

1 0 VDC High side FRFET On

1 1 Forbidden Shoot through

Open Open Z Same as (0,0)

COM

VCC

LIN

HIN

VB

HO

VS

LO

P

N R3

InverterOutput

C3

C1

MC

U

+15 V

10 F

These values depend on PWM control algorithm

* Example of Bootstrap Paramters: C1 = C2 = 1 F Ceramic Capacitor

R5

C5

VDC

C2

VTS

* Example Circuit : V phase

C4

V

One Leg Diagram of Motion SPM® 5 Product

20 40 60 80 100 120 140 1600.5

1.0

1.5

2.0

2.5

3.0

3.5

VT

S [V

]

THVIC [oC]

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Figure 6. Switching Time Definitions

Figure 7. Switching and RBSOA (Single-pulse) Test Circuit (Low-side)

Figure 8. Under-Voltage Protection (Low-Side)

Figure 9. Under-Voltage Protection (High-Side)

tON trr

Irr100% of ID

120% of ID

(a) Turn-on

tOFF

(b) Turn-off

ID

VDS

VDS

ID

VIN VIN

10% of ID

COM

VCC

LIN

HIN

VB

HO

VS

LO

IDVCC

CBS

L VDC

+VDS

-VTS

One Leg Diagram of Motion SPM® 5 Product

UVCCD

UVCCR

Input Signal

UV ProtectionStatus

Low-side Supply, VCC

MOSFET Current

RESET DETECTION RESET

UVBSD

UVBSR

Input Signal

UV ProtectionStatus

High-side Supply, VBS

MOSFET Current

RESET DETECTION RESET

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Figure 10. Example of Application Circuit4th Notes:

1. About pin position, refer to Figure 1.

2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM® 5 product and MCU are useful to prevent improper input signal caused by surge-noise.

3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state.

4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.

5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.

COM

VCC

LIN

HIN

VB

HO

VS

LO

COM

VCC

LIN

HIN

VB

HO

VS

LO

COM

VCC

LIN

HIN

VB

HO

VS

LO

(1 ) COM

(2 ) VB(U)

(3 ) VCC(U)

(4 ) IN(UH)

(5 ) IN(UL)

(6 ) N.C

(7 ) VB(V)

(8 ) VCC(V)

(9 ) IN(VH)

(10) IN(VL)

(11) VTS

(12) VB(W)

(13) VCC(W)

(14) IN(WH)

(15) IN(WL)

(16) N.C

(17) P

(18) U , VS(U)

(19) NU

(22) NW

Mic

om

C1

15 V Supply

C3 VDC

C2

R3

R4

C6

R5

C5

For current-sensing and protection

VTS

(21) V , VS(V)

(20) NV

(23) W, VS(W)

C4

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Detailed Package Outline Drawings (FSB50660SF)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD23DC.pdf

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Detailed Package Outline Drawings (FSB50660SFT)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/MO/MOD23DF.pdf

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www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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