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Flash Memory Technology Direction

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Page 1: Flash Memory Technology Direction
Page 2: Flash Memory Technology Direction

Flash Memory Technology Flash Memory Technology Direction Direction

Jim Cooke ([email protected])Jim Cooke ([email protected])Director of Applications EngineeringDirector of Applications EngineeringMemory Products GroupMemory Products GroupMicron Technology, Inc.Micron Technology, Inc.

Page 3: Flash Memory Technology Direction

AgendaAgendaDisk drive definitions: HDD, HHD, SSDDisk drive definitions: HDD, HHD, SSDNAND Flash benefits for drivesNAND Flash benefits for drives

HybridHybridReadyBoostReadyBoost™™IntelIntel®® Robson technologyRobson technologyChipset adoptionChipset adoptionSSDSSD

Page 4: Flash Memory Technology Direction

Agenda (continued)Agenda (continued)NAND Flash marketNAND Flash marketMLC versus SLCMLC versus SLC

Architecture Architecture PerformancePerformance

Error modesError modesEmbedded MMC (eMMC)Embedded MMC (eMMC)

Page 5: Flash Memory Technology Direction

Disk Drive DefinitionsDisk Drive DefinitionsHard disk drives (HDD)Hard disk drives (HDD)

HDDs utilize ultraHDDs utilize ultra--sophisticated magnetic recording and playback sophisticated magnetic recording and playback technologies. They are used as the primary data storage componentechnologies. They are used as the primary data storage component in t in notebooks, desktops, servers, and dedicated storage systems.notebooks, desktops, servers, and dedicated storage systems.

Hybrid hard drives (HHD)Hybrid hard drives (HHD)HHDs are a new type of largeHHDs are a new type of large--buffer computer hard drive. They are different buffer computer hard drive. They are different from standard hard drives in that they employ a large buffer (upfrom standard hard drives in that they employ a large buffer (up to 1GB) of to 1GB) of nonvolatile flash memory used to cache data during normal use. Bnonvolatile flash memory used to cache data during normal use. By using y using this large buffer, the platters of the hard drive are at rest althis large buffer, the platters of the hard drive are at rest almost at all times, most at all times, instead of constantly spinning as is the case in HDDs. This featinstead of constantly spinning as is the case in HDDs. This feature offers ure offers numerous benefits, such as decreased power consumption, improvednumerous benefits, such as decreased power consumption, improvedreliability, and a faster boot process.reliability, and a faster boot process.

Solid state drives (SSD)Solid state drives (SSD)SSDs are SSDs are data storage devicedata storage devices that use s that use nonvolatile memorynonvolatile memory (Flash) and (Flash) and volatile memory (volatile memory (SDRAMSDRAM) to store data. While technically not "disks," these ) to store data. While technically not "disks," these devices are referred to this way because they are typically useddevices are referred to this way because they are typically used as as replacements for HDDs. replacements for HDDs.

Source: Gartner, wikipedia.org

Page 6: Flash Memory Technology Direction

SSD versus HDD SSD versus HDD SSDSSD HDDHDD

CapacityCapacityPerformancePerformanceReliabilityReliabilityEnduranceEndurancePowerPowerSizeSizeWeightWeightShockShockTemperatureTemperatureCost per bitCost per bit

•• Based on recent Based on recent advances in NAND advances in NAND lithography, SSD lithography, SSD densities have densities have reached capacities reached capacities for mass market for mass market appeal. appeal.

•• SSD offers many SSD offers many features improve features improve user experiences.user experiences.

•• Early concerns about Early concerns about reliability and reliability and endurance have endurance have been overcome.been overcome.

••NAND solid state drives are ready for deployment in many applicaNAND solid state drives are ready for deployment in many applicationstions

Page 7: Flash Memory Technology Direction

Why Add NAND to a PC?Why Add NAND to a PC?Issues in PC architecture todayIssues in PC architecture today

Long boot times for OS and applicationsLong boot times for OS and applicationsUnacceptable bootUnacceptable boot--up times for applicationsup times for applicationsHard disk drive (HDD) latency falling behind Hard disk drive (HDD) latency falling behind processor performanceprocessor performance——HDD maximizes HDD maximizes GB, not performanceGB, not performance

Page 8: Flash Memory Technology Direction

Why Add NAND to a PC? Why Add NAND to a PC? (continued)(continued)

Industry wants extended notebook battery Industry wants extended notebook battery lifetimelifetime

HDD access (and motors) degrade battery lifeHDD access (and motors) degrade battery lifeNAND accesses save powerNAND accesses save power

Page 9: Flash Memory Technology Direction

PC Opportunities for NANDPC Opportunities for NAND1.1. PC chipset/addPC chipset/add--in cardin card

IntelIntel®® Robson Robson technology in future technology in future platformsplatforms

AddAdd--in card or in card or soldered onto soldered onto motherboardmotherboard

2.2. Hybrid HDD with cacheHybrid HDD with cacheAdd NAND to the HDD Add NAND to the HDD chipsetchipset

Microsoft approachMicrosoft approach

3.3. Solid state drive (SSD)Solid state drive (SSD)Flash replacement for Flash replacement for HDDHDD

CPU

Northbridge(MCH)

Southbridge(ICH)

Videoconnector

RS232USB

parallelSATA

System DRAM

PCI E- (optionally on MCH)

Cache

Add--incard

Build option 1

PC add--in card- or -

soldered to motherboard

SSD

Build option 3

Solid state drive

Build option 2

Hybrid HDD with cache

NAND

Page 10: Flash Memory Technology Direction

Hard Disk Drive (HDD)Hard Disk Drive (HDD)Rotational latency Rotational latency

Seek latencySeek latency

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Hybrid hard drives have same basic structure of standard Hybrid hard drives have same basic structure of standard HDDs, but also have a nonvolatile cacheHDDs, but also have a nonvolatile cache

This feature enables near instantaneous read/write This feature enables near instantaneous read/write capability even when the spindle has stoppedcapability even when the spindle has stopped

Hybrid Hard Drives Hybrid Hard Drives Incremental Upgrade to Incremental Upgrade to HDDsHDDs

Page 12: Flash Memory Technology Direction

Additional Ways NAND Additional Ways NAND Flash Boosts PerformanceFlash Boosts Performance

ReadyBoost can be implemented as:ReadyBoost can be implemented as:AddAdd--on USB Flash diskon USB Flash diskAddAdd--on ExpressCardon ExpressCard™™AddAdd--on SD/MMC card or any other mediaon SD/MMC card or any other media

Users determine how much of the Flash is Users determine how much of the Flash is used as a performance cache used as a performance cache

Page 13: Flash Memory Technology Direction

ReadyBoost SetupReadyBoost Setup

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Intel Robson TechnologyIntel Robson TechnologyFirst ships with the Santa Rosa notebook chipset platformRolls out toward the end of 1Q07 and will be implemented with Microsoft's® Vista™Standard Santa Rosa Robson chipset configuration expected to include 512MB of NAND, but to offer 1GB as an option

Source: Gartner,15 December 2006

Page 15: Flash Memory Technology Direction

VistaVista--Equipped Portable Equipped Portable PCs with NAND Caching PCs with NAND Caching SolutionsSolutions(Attach Rate by Year)(Attach Rate by Year)

2007 2008 2009 2010

Neither NAND caching technology

95% 77% 43% 15%

Hybrid HDD 5% 14% 31% 41%

Embedded NAND 1% 9% 26% 43%

Source: IDC 2006

Page 16: Flash Memory Technology Direction

NAND Chipset Adoption in NAND Chipset Adoption in Notebook PCs (2007Notebook PCs (2007––2010)2010)

Page 17: Flash Memory Technology Direction

NAND Chipset Adoption in NAND Chipset Adoption in Desktop PCs (2007Desktop PCs (2007––2010)2010)

Page 18: Flash Memory Technology Direction

Hybrid HDDs in PCs and Hybrid HDDs in PCs and Associated NAND Flash Associated NAND Flash ConsumptionConsumption

Page 19: Flash Memory Technology Direction

No moving partsNo moving parts

Lower power (less heat, longer battery life)Lower power (less heat, longer battery life)

More ruggedMore rugged

FasterFaster

Solid State Drives are Solid State Drives are DifferentDifferent

Page 20: Flash Memory Technology Direction

Solid State Drives are Solid State Drives are RuggedRugged

Source: Web-Feet Research, Seagate, Tom’s Hardware

Hard Disk Drive

Solid State Drive

Hard Disk Drive

Hybrid Hard Drive

1.8in HDD SSD (1.8/2.5in) 2.5in HDD 2.5in HHDCapacity 30–80GB 4–32GB 40–160GB Up to 160GBData rate (max sustain)Read 25 MB/s 57 MB/s 44 MB/sWrite 25 MB/s 32 MB/s 44 MB/sSpindle speed 4,200 RPM None 5,400 RPM 5,400 RPMSeek 15ms None 12ms 12.5msNon-operating shock

1,500G 2,000G 900G 900G

Average Specifications

•• Both SSD and HHD provide power savings in various applications, Both SSD and HHD provide power savings in various applications, but the but the exact power savings fluctuates from application to applicationexact power savings fluctuates from application to application

•• In a test of a 32GB SSD drive, the power savings of the SSD was In a test of a 32GB SSD drive, the power savings of the SSD was 1 watt 1 watt better than the closest tested HDDbetter than the closest tested HDD

Page 21: Flash Memory Technology Direction

SSDs Forecasted to Grow at a 146 SSDs Forecasted to Grow at a 146 Percent CAGR from 2005Percent CAGR from 2005––20102010

Source: Web-Feet Research, Gartner

0

100

200

300

400

500

600

700

800

900

1000

2005 2006 2007 2008 2009 2010

Uni

ts in

Mill

ions

Shi

pped

Solid state drivesHybrid hard drivesHard disk drives

Worldwide Disk Drives by Type(Millions of units shipped)

419 M475 M

552 M

672 M

792 M

921 M

Page 22: Flash Memory Technology Direction

Data Processing Applications Data Processing Applications Expected to Drive Majority of SSD Expected to Drive Majority of SSD Unit ShipmentsUnit Shipments

Worldwide SSD Shipments by Market(Millions of units shipped)

480 K 1.5 M4.3 M

10.8 M

21.6 M

41.3 M

62.2 M

Source: Web-Feet Research

0.00

10.00

20.00

30.00

40.00

50.00

60.00

70.00

2005 2006 2007 2008 2009 2010 2011

Mill

ions

of U

nits

Shi

pped

Military/aerospaceIndustrial/medicalConsumerData processing

Page 23: Flash Memory Technology Direction

2.5in is the 2.5in is the ““Sweet SpotSweet Spot”” Form Factor Form Factor for SSDsfor SSDs

Worldwide SSD Shipments by Form Factor(Millions of units shipped)

480 K 1.5 M4.3 M

10.8 M

21.6 M

41.3 M

62.2 M

Source: Web-Feet Research

0

10

20

30

40

50

60

70

2005 2006 2007 2008 2009 2010 2011

Mill

ions

of U

nits

Shi

pped

1.8in SSD2.5in SSD3.5in SSD

Page 24: Flash Memory Technology Direction

Demand for SSDs and Demand for SSDs and HDDs in Portable HDDs in Portable ComputersComputers

Source: Web-Feet Research 2006

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HDD versus SSDHDD versus SSD

Source: 2006 Web-feet Research

20062006 20112011

Page 26: Flash Memory Technology Direction

Source: IDC 2007

$100$100

$10$10

$1$1

$0$0

$/GB$/GB 20052005 20062006 20072007 20082008 20092009 20102010

$43.39$43.39

$15.66$15.66

$7.12$7.12

$4.68$4.68

$3.11$3.11

$1.96$1.96

$3.76$3.76

$2.05$2.05

$1.34$1.34$1.08$1.08 $1.02$1.02 $0.89$0.89

$1.30$1.30$1.02$1.02

$0.81$0.81

$0.58$0.58$0.45$0.45

$0.35$0.35HDD 0.85in, 1.0in, 1.8in CombinedHDD 0.85in, 1.0in, 1.8in CombinedNAND FlashNAND FlashMobile HDD 2.5in (portable PCs)Mobile HDD 2.5in (portable PCs)

HDD, NAND Flash Pricing (Log Chart)HDD, NAND Flash Pricing (Log Chart)

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Solid State Drive Meets or Exceeds HDD Solid State Drive Meets or Exceeds HDD ReliabilityReliability

Bad blockmanagement

Bad blockmanagement

Hard Disk Drive

Raw media

Data management

Typical raw error rate

>10-4

Channel and block codingChannel and block coding

Solid State Drive

Bad blockmanagement

Bad blockmanagement

Block codingBlock coding

ApplicationApplication Data

Error Rate 10-15 to 10-14Application Data Error Rate ~10-15

Typical raw error rate

<10-5

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Key TakeawaysKey TakeawaysHybrid hard drives represent an Hybrid hard drives represent an incremental upgrade to HDDs incremental upgrade to HDDs Solid state drives are significantly different Solid state drives are significantly different and offer several advantagesand offer several advantagesAs NAND becomes increasingly As NAND becomes increasingly competitive in the densities offered and competitive in the densities offered and the price, the adoption rate will increasethe price, the adoption rate will increase2.5in is the 2.5in is the ““sweet spotsweet spot”” form factor for form factor for SSDsSSDs

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All signsAll signspoint to point to ……

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NAND Flash MarketNAND Flash Market

Source: Gartner 3Q06

0%

20%

40%

60%

80%

100%

2004 2005 2006 2007

NROM

MLC AND

ORNAND

MLC DOC

SLC DOC

OneNAND

MLC NAND

SLC NAND

Page 31: Flash Memory Technology Direction

MultiMulti--level cell NAND (MLC) stores four states per memory cell level cell NAND (MLC) stores four states per memory cell and enables two bits programmed/read per memory celland enables two bits programmed/read per memory cell

MLC versus SLC MLC versus SLC

SingleSingle--level (SLC) NAND stores two states per memory cell and level (SLC) NAND stores two states per memory cell and enables one bit programmed/read per memory cellenables one bit programmed/read per memory cell

Page 32: Flash Memory Technology Direction

MLC versus SLC MLC versus SLC (continued)(continued)

MLC NAND Flash will lead in the lowest MLC NAND Flash will lead in the lowest cost for consumer applicationscost for consumer applications

Media playersMedia playersMP3/camera phonesMP3/camera phonesMedia cardsMedia cards

Professional products, ReadyBoost UFDs, Professional products, ReadyBoost UFDs, and solid state drives (SSDs) will still and solid state drives (SSDs) will still demand the higher performance and demand the higher performance and higher reliability of singlehigher reliability of single--level cell (SLC) level cell (SLC) NAND Flash NAND Flash

Page 33: Flash Memory Technology Direction

MLC versus SLC MLC versus SLC (continued)(continued)

FeaturesBits per cellBits per cell 22 11

VoltageVoltage 3.3V3.3V 3.3V, 1.8V3.3V, 1.8V

Data width (bits)Data width (bits) x8x8 x8, x16x8, x16ArchitectureNumber of planesNumber of planes 22 1 or 21 or 2

Page sizePage size 2,1122,112––4,314 bytes4,314 bytes 2,112 bytes2,112 bytes

Pages per blockPages per block 128128 6464ReliabilityNOP (partial page programming)NOP (partial page programming) 11 44

ECC (per 512 bytes)ECC (per 512 bytes) 4+4+ 11

Endurance (ERASE / PROGRAM Endurance (ERASE / PROGRAM cycles)cycles) <10K<10K <100K<100K

Array operationsttR (MAX)R (MAX) 5050µµss 2525µµssttPROG (TYP)PROG (TYP) 600600––900900µµss 200200––300300µµssttBERS (TYP)BERS (TYP) 3ms3ms 1.51.5––2ms2ms

Page 34: Flash Memory Technology Direction

2Gb, 2K Page SLC NAND 2Gb, 2K Page SLC NAND ArchitectureArchitecture

Page 35: Flash Memory Technology Direction

NAND ArchitectureNAND Architecture

NAND architecture is NAND architecture is based on based on independent blocksindependent blocksBlocks are the Blocks are the smallest erasable smallest erasable unitsunitsPages are the Pages are the smallest smallest programmable unitsprogrammable unitsPartial pages can be Partial pages can be programmed in some programmed in some devicesdevices

16,896 bits per page*

64 pages per block*

Page

String

Float gate

Memory cell

Control gate

I/OI/OI/OI/O

Block architecture

* Typical for 4Gb SLC

Page 36: Flash Memory Technology Direction

2Gb, SLC 72nm, 2K Page 2Gb, SLC 72nm, 2K Page PerformancePerformance

Page 37: Flash Memory Technology Direction

TwoTwo--Plane FeaturesPlane FeaturesDevice is divided into two physical planes, Device is divided into two physical planes, odd/even blocksodd/even blocksProvides ability to:Provides ability to:

Concurrently access two pages for readConcurrently access two pages for readErase two blocks concurrentlyErase two blocks concurrentlyProgram two pages concurrentlyProgram two pages concurrently

The page addresses of blocks from both The page addresses of blocks from both planes must be the same during planes must be the same during twotwo--plane read/program/erase operationsplane read/program/erase operations

Page 38: Flash Memory Technology Direction

4Gb, Two4Gb, Two--Plane 2K Page Plane 2K Page SLC NAND ArchitectureSLC NAND Architecture

Page 39: Flash Memory Technology Direction

4Gb, 2K Page SLC NAND 4Gb, 2K Page SLC NAND PerformancePerformance

Page 40: Flash Memory Technology Direction

8Gb, Two8Gb, Two--Plane 2K Page Plane 2K Page MLC NAND ArchitectureMLC NAND Architecture

Page 41: Flash Memory Technology Direction

8Gb, 2K Page MLC 8Gb, 2K Page MLC PerformancePerformance

Page 42: Flash Memory Technology Direction

16Gb, Two16Gb, Two--Plane 4K Page Plane 4K Page MLC NAND ArchitectureMLC NAND Architecture

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TwoTwo--Plane, 4K Page MLC Plane, 4K Page MLC NAND ArchitectureNAND Architecture

Page 44: Flash Memory Technology Direction

Open NAND Flash InterfaceOpen NAND Flash InterfaceFuture Micron NAND Flash Future Micron NAND Flash devices support the open NAND devices support the open NAND Flash interface (ONFI) Flash interface (ONFI) specificationspecificationMicron is a founding member of Micron is a founding member of ONFIONFIThe ONFI 1.0 specification is The ONFI 1.0 specification is available at available at http://www.onfi.org/http://www.onfi.org/

ONFI ONFI FoundersFounders

Page 45: Flash Memory Technology Direction

NAND Error ModesNAND Error ModesProgram disturbProgram disturbRead disturbRead disturbData retentionData retentionEnduranceEndurance

These issues are understood well and can These issues are understood well and can be addressed be addressed

Page 46: Flash Memory Technology Direction

ECC Can Fix Everything ECC Can Fix Everything (Well Almost)(Well Almost)

You must understand your target data You must understand your target data error rate for your particular systemerror rate for your particular systemUnderstand the use model that you intend Understand the use model that you intend for your systemfor your systemDesign the ECC circuit to improve the raw Design the ECC circuit to improve the raw bit error rate (BER) of the NAND Flash, bit error rate (BER) of the NAND Flash, under your use conditions, to meet your under your use conditions, to meet your systemsystem’’s target BERs target BER

Page 47: Flash Memory Technology Direction

ECC Code Selection Becoming ECC Code Selection Becoming More ImportantMore Important

As the raw NAND Flash BER increases, matching As the raw NAND Flash BER increases, matching the ECC to the applicationthe ECC to the application’’s target BER becomes s target BER becomes more importantmore important

t = 0

t = 1

t = 2t = 3

t = 4

t = 5

t = 6

1.0E-25

1.0E-23

1.0E-21

1.0E-19

1.0E-17

1.0E-15

1.0E-13

1.0E-11

1.0E-09

1.0E-07

1.0E-05

1.0E-03

1.0E-011.0E-151.0E-131.0E-111.0E-091.0E-071.0E-051.0E-031.0E-01

Raw NAND Bit Error Rate

App

licat

ion

Bit

Erro

r Rat

e

For SLC

A code with a correction threshold of one is sufficient

t = 4 required (as a minimum) for MLC

Page 48: Flash Memory Technology Direction

Reducing Program DisturbReducing Program DisturbProgram pages in a block sequentially,Program pages in a block sequentially,from page 0 to page 63 (SLC) or to page from page 0 to page 63 (SLC) or to page 127 (MLC)127 (MLC)Minimize partialMinimize partial--page programming page programming operations (SLC)operations (SLC)It is mandatory to restrict page It is mandatory to restrict page programming to one single operation programming to one single operation (MLC)(MLC)Use ECC to recover from program disturb Use ECC to recover from program disturb errorserrors

Page 49: Flash Memory Technology Direction

Reducing Read DisturbReducing Read Disturb““Rule of thumbRule of thumb”” for excessive reads per block for excessive reads per block between ERASE operationsbetween ERASE operations

SLC SLC –– 1,000,000 READ cycles1,000,000 READ cyclesMLC MLC –– 100,000 READ cycles100,000 READ cycles

If possible, read equally from pages within the If possible, read equally from pages within the blockblockIf exceeding the If exceeding the ““rule of thumbrule of thumb”” cycle count, cycle count, then move the block to another location and then move the block to another location and erase the original blockerase the original blockErase resets the READ DISTURB cycle countErase resets the READ DISTURB cycle countUse ECC to recover from read disturb errorsUse ECC to recover from read disturb errors

Page 50: Flash Memory Technology Direction

Improving Data RetentionImproving Data RetentionLimit PROGRAM/ERASE Limit PROGRAM/ERASE cycles in blocks that cycles in blocks that require long retentionrequire long retentionLimit reads to reduce read Limit reads to reduce read disturbdisturb

Example:Example:

10 cyc 1,000 cyc 10,000 cyc

5 year

2 year

0.5 year

Retention required

(arbitrary time)

Block cycles(arbitrary cycles)

Infrequently cycled blocks have longer

retention

Frequently cycled blocks have shorter retention

Page 51: Flash Memory Technology Direction

Endurance Endurance RecommendationsRecommendations

Always check pass/fail status (SR0) for Always check pass/fail status (SR0) for PROGRAM and ERASE operationsPROGRAM and ERASE operations

Note: READ operations do not set SR0 to fail Note: READ operations do not set SR0 to fail statusstatus

If fail status after program, move all block If fail status after program, move all block data to an available block and mark the data to an available block and mark the failed block badfailed block bad

Page 52: Flash Memory Technology Direction

Endurance Endurance Recommendations Recommendations (continued)(continued)

Use ECC to recover from errorsUse ECC to recover from errorsWrite data equally to all good blocks (wear Write data equally to all good blocks (wear leveling)leveling)Protect block management/metadata in Protect block management/metadata in spare area with ECCspare area with ECC

Page 53: Flash Memory Technology Direction

Wear LevelingWear LevelingWear leveling is a plus on SLC devices where Wear leveling is a plus on SLC devices where blocks can support up to 100,000 blocks can support up to 100,000 PROGRAM/ERASE cyclesPROGRAM/ERASE cyclesWear leveling is imperative on MLC devices Wear leveling is imperative on MLC devices where blocks can typically support fewer than where blocks can typically support fewer than 10,000 cycles10,000 cyclesIf you erased and reprogrammed a block every If you erased and reprogrammed a block every minute, you would exceed the 10,000 cycling minute, you would exceed the 10,000 cycling limit in just 7 days!limit in just 7 days!

60 x 24 x 7 = 10,08060 x 24 x 7 = 10,080Rather than cycling the same block, wear Rather than cycling the same block, wear leveling involves distributing the number of leveling involves distributing the number of blocks that are cycledblocks that are cycled

Page 54: Flash Memory Technology Direction

Wear Leveling (continued)Wear Leveling (continued)An 8Gb MLC device contains 4,096 independent blocksAn 8Gb MLC device contains 4,096 independent blocksIf we took the previous example and distributed the cycles If we took the previous example and distributed the cycles over all 4,096 blocks, each block would have been over all 4,096 blocks, each block would have been programmed fewer than three times (versus the 10,800 programmed fewer than three times (versus the 10,800 cycles when you cycle the same block)cycles when you cycle the same block)If you provided perfect wear leveling on a 4,096 block If you provided perfect wear leveling on a 4,096 block device, you could erase and program a block every device, you could erase and program a block every minute, every day, for 77 years!minute, every day, for 77 years!

10,000 10,000 ×× 4,096 40,960,004,096 40,960,00------------------------------------------ = = -------------------- = 28,444 days = 77.9 years= 28,444 days = 77.9 years

60 60 ×× 24 1,44024 1,440

Page 55: Flash Memory Technology Direction

Embedded MMC (eMMC)Embedded MMC (eMMC)Direct NAND interface will always provide Direct NAND interface will always provide the lowest cost solutionthe lowest cost solutionThe complexities of future MLC require The complexities of future MLC require increased attentionincreased attentionECC algorithm is becoming more ECC algorithm is becoming more complex, moving from 4+ bits to 8+ bits in complex, moving from 4+ bits to 8+ bits in the futurethe futureA managed interface addresses the A managed interface addresses the complexities of current and future NAND complexities of current and future NAND Flash devicesFlash devices

Page 56: Flash Memory Technology Direction

Embedded MMC (eMMC) Embedded MMC (eMMC) (continued)(continued)

The host does not need to know the The host does not need to know the details of NAND Flash block, such as details of NAND Flash block, such as sizes, page sizes, planes, new features, sizes, page sizes, planes, new features, process generation, MLC vs. SLC, wear process generation, MLC vs. SLC, wear leveling, and ECC requirementsleveling, and ECC requirementsEmbedded MMC (eMMC) is the next Embedded MMC (eMMC) is the next logical step in the NAND Flash evolution logical step in the NAND Flash evolution for embedded applications because it for embedded applications because it turns a program/ erase/read device with turns a program/ erase/read device with bad blocks and bad bits (NAND Flash) bad blocks and bad bits (NAND Flash) into a simple write/read memoryinto a simple write/read memory

Page 57: Flash Memory Technology Direction

The Need for a Managed The Need for a Managed SolutionSolution

NAND page size, number of planes, and NAND page size, number of planes, and block size are technology dependentblock size are technology dependentECC and number of partial page program ECC and number of partial page program operations are technology and vendor operations are technology and vendor dependentdependentCommands and interface inconsistencies Commands and interface inconsistencies between vendorsbetween vendors

Page 58: Flash Memory Technology Direction

What is eMMC?What is eMMC?MLC NAND + MMC 4.2 version MLC NAND + MMC 4.2 version controller devicecontroller deviceHighHigh--speed solutionspeed solution

Host selectable x1, x4, and x8 I/OsHost selectable x1, x4, and x8 I/Os52 MHz clock speed (MAX) 52 MHz clock speed (MAX)

BackwardBackward--compatible with previous compatible with previous MMC systems MMC systems Handles ECC, wear leveling, and Handles ECC, wear leveling, and block managementblock management

12 x 16 x 1.3mm BGA package

Page 59: Flash Memory Technology Direction

What is eMMC?What is eMMC?

Page 60: Flash Memory Technology Direction

ConclusionsConclusionsNAND Flash is the lowest cost, nonvolatile NAND Flash is the lowest cost, nonvolatile memory available todaymemory available todayMajor applications are SSD and mobile Major applications are SSD and mobile devicesdevicesComplexities of MLC NAND require Complexities of MLC NAND require increased hardware and software designincreased hardware and software designFor embedded applications, all these For embedded applications, all these complexities are addressed using the complexities are addressed using the controller included with eMMCcontroller included with eMMC

Page 61: Flash Memory Technology Direction

© 2007 Microsoft Corporation. All rights reserved. Microsoft, Windows, Windows Vista and other product names are or may be registered trademarks and/or trademarks in the U.S. and/or other countries.The information herein is for informational purposes only and represents the current view of Microsoft Corporation as of the date of this presentation. Because Microsoft must respond to changing market

conditions, it should not be interpreted to be a commitment on the part of Microsoft, and Microsoft cannot guarantee the accuracy of any information provided after the date of this presentation. MICROSOFT MAKES NO WARRANTIES, EXPRESS, IMPLIED OR STATUTORY, AS TO THE INFORMATION IN THIS PRESENTATION.