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Supplementary material Excitonic Metal Oxide Solar Cells for All-transparent Module Integration Malkeshkumar Patel a,b , Hong-Sik Kim a,b , Joondong Kim a,b, *, Ju-Hyung Yun a , Sung Jin Kim c , Eun Ha Choi d , and Hyeong-Ho Park e a Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 406772, Republic of Korea b Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon, 406772, Republic of Korea c Department of Electrical and Computer Engineering, University of Miami, Miami, Florida 33124, United States d Plasma Bioscience Research Center, Kwangwoon University, Seoul, 01897, Republic of Korea e Device Platforms Lab., Device Engineering Labs, Korea Advanced Nano Fab Center (KANC), Suwon 443270, Republic of Korea 1

DOI: 10 - ars.els-cdn.com€¦ · Web viewSupplementary material. Excitonic. Metal Oxide . Solar Cells. for All-transparent Module Integration. Malkeshkumar Patel a,b, Hong-Sik Kim

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Supplementary material

Excitonic Metal Oxide Solar Cells for All-transparent Module Integration

Malkeshkumar Patel a,b, Hong-Sik Kim a,b, Joondong Kim a,b,*, Ju-Hyung Yun a,Sung Jin Kim c, Eun Ha Choi d, and Hyeong-Ho Park e

a Department of Electrical Engineering, Incheon National University,119 Academy Rd. Yeonsu, Incheon, 406772, Republic of Koreab Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University,119 Academy Rd. Yeonsu, Incheon, 406772, Republic of Koreac Department of Electrical and Computer Engineering, University of Miami,Miami, Florida 33124, United Statesd Plasma Bioscience Research Center, Kwangwoon University,Seoul, 01897, Republic of Koreae Device Platforms Lab., Device Engineering Labs, Korea Advanced Nano Fab Center (KANC), Suwon 443270, Republic of Korea

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Figure S1. XRD patterns of the ZnO film and the NiO film. To clarify the XRD profiles, specimens were separately prepared by the ZnO film on a glass substrate and the NiO film on a glass substrate. All other deposition conditions are same as the NiO/ZnO device.

UIRF.687.spe: UIRF Company Name2015 Dec 18 Al mono 19.9 W 100.0 45.0? 187.85 eV・・ 5.7630e+004 max 4.59 minSu1s/ 1/ 1

0100200300400500600700800900100011000

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8 x 104 UIRF.687.spe

Binding Energy (eV)

c/s -O

KLL

-O K

LL

-O1s

-C1s

-Ni L

MM2

-Ni L

MM1

-Ni L

MM

-Ni3s -N

i3p

-Ni2p

3 -Ni2p

1 -Ni2p

Figure S2. XPS survey spectrum of NiO sample.

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Figure S3. Dark J-V characteristics of ultrathin ZnO/NiO device.

Figure S4. Series and shunt resistance estimation using the illuminated J-V spectra.

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Figure S5. (a) Integrated photocurrent density as a function of photon energy from the sun light and irradiance spectral distribution. Spectral distribution of AM1.5G (http://rredc.nrel.gov/solar/spectra/am1.5/) was processed for photocurrent density. Each photon absorption generate one electron/hole pair was considered. (b) Photocurrent density of ZnO/NiO device estimated using the quantum efficiency data as shown in Fig. 3b in our manuscript.

Figure S6. TEM image of ultrathin ZnO/NiO specimen.

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Figure S7. Prolonged photocurrent measurement of ZnO/NiO/Ag paste device under the pulsed UV light (365 nm, 3 mW/cm2).

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