Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Dr. Jyoti Prasad Bandyopadhyay
Professor
E.C.E
PhD (Tech), FIETE, SMIEEE (USA)
Email:[email protected]
_________________________________________________________________
Detailed Qualification:
Degree Stream/Specialization University Year of
Passing
PhD Impact Avalanche
Transit Time (IMPATT)
Devices
Institute of
Radio
Physics and
Electronics,
University
of Calcutta
1986
Teaching Interests:
Electronics Devices
Electric Circuits
Basic Electrical & Electronics Engineering
Micro & Opto. Electronics
Micro Wave & Antenna
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Research Interests:
Electronics Devices
Impatt Diode, Avalanche Diode
Optical Communication
Membership (if any):
(i) Fellow, New York Academy of Science
(ii) Senior Member, IEEE, USA
(iii) Member, Research Board of Advisors, ABI (USA).
(iv) Fellow, Institute of Electronics and Telecommunication Engineers, Delhi
(v)Life member,(a) Semiconductor Society of India,(b) Indian Physics Association (c)
Indian Association for the Cultivation of Science and (d) EMI & EMC Society of India
Research & Publications:
Conference Proceedings:
Title of the Paper Author List Name of the
Conference,
Location
Proceedings
Details
Optimum Design of Low
Power and High
Performance GNR
TFETs
Jayabrata Goswami, Anuva
Ganguly and J. P. Banerjee
6th International
Conference on
Computers and Devices
for Communication
(CODEC), December
16-18, 2015 Kolkata,
India
Proc.of 6th
International
Conference on
Computers and
Devices for
Communication
(CODEC)
Prospect of GNR TFETs
as Potential Terahertz
Sources
AnuvaGanguly,
JayabrataGoswami, and J. P.
Banerjee
Proc.of6th International
Conference on
Computers and Devices
for Communication
(CODEC), December
16-18, 2015 Kolkata,
India
Proc.of6th
International
Conference on
Computers and
Devices for
Communication
(CODEC)
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Optimization of High
Performance GNR
TFETs
AnuvaGanguly,
JayabrataGoswami,
AritraAcharyya and
J.P.Banerjee
International
Conference on
Foundations and
Frontiers in
Communication,
Computer and Electrical
Engineering (C2E2)
2015 will be held on 9th
-10th Jan, SKFGI,
Mankundu, Hooghly,
WB, India, 2015.
Proc. of
International
Conference on
Foundations and
Frontiers in
Communication,
Computer and
Electrical
Engineering (C2E2)
2015
Air Dielectric Barrier
Discharge Plasma
Processing For Surface
Modification Of
Microfluidic Channel
Surfaces For
Bioengineering
Applications
SubhadeepMukhopadhyay and
J. P. Banerjee
30th
National
Symposium on Plasma
Science & Technology (
PLASMA-2015), SINP,
Kolkata
Proc. of 30th
National
Symposium on
Plasma Science &
Technology (
PLASMA-2015)
Nanoscale Coating in
Microfluidic Laboratory-
on-a-Chip Devices
Fabricated by
MicroelectronicTechnol
ogies”, Proc.of 6th
International Conference
on Computers and
Devices for
Communication
(CODEC), December
16-18, 2015 Kolkata,
India
Subhadeep Mukhopadhyay and
J. P. Banerjee
6th International
Conference on
Computers and Devices
for Communication
(CODEC), December
16-18, 2015 Kolkata,
India
Proc.of 6th
International
Conference on
Computers and
Devices for
Communication
(CODEC),
Design Optimization and
Large-Signal Simulation
of DLHL Si IMPATT
Diode at 60 GHz
Suranjana Banerjee,
AritraAcharyya,J. P.
Banerjeeand MonijitMitra
International
Conference on
Computer,
Communication,
Control and Information
Technology (C3IT),
Academy of
Technology,
Adisaptagram, Hooghly
712121, West Bengal,
India, February 7-8,
2015
Proc. of
International
Conference on
Computer,
Communication,
Control and
Information
Technology (C3IT)
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
94 GHz Multiquantum
Well IMPATT Diodes
based on 3C-SiC/Si
Material System
Suranjana Banerjee,
AritraAcharyya,J. P. Banerjee,
and MonijitMitra
International
Conference on
Computer,
Communication,
Control and Information
Technology (C3IT),
Academy of
Technology,
Adisaptagram, Hooghly
712121, West Bengal,
India, February 7-8,
2015.
Proc. of
International
Conference on
Computer,
Communication,
Control and
Information
Technology (C3IT)
Large-Signal and Noise
Properties of
Heterojunction DDR
IMPATTs Based on
AlxGa1-xN~GaN
Material System at 1.0
THz,”,”,
Suranjana Banerjee,
AritraAcharyya,J. P. Banerjee,
and MonojitMitra
International
Conference on
Foundations and
Frontiers in
Communication,
Computer and Electrical
Engineering (C2E2)
2015 held on 9th -10th
Jan, SKFGI, Mankundu,
Hooghly, WB, India,
2015.
Proc.of
International
Conference on
Foundations and
Frontiers in
Communication,
Computer and
Electrical
Engineering (C2E2)
2015
Large-signal Properties
of 3C-SiC/Si
Heterojunction DDR
IMPATT Devices at
Terahertz Frequencies
Suranjana Banerjee,
AritraAcharyya, MonojitMitra
and J. P. Banerjee
The 34th
PIERS in
Stockholm, Sweden
pp. 462-467,
August12-15, 2013
Effects of Quantum
Correction on the Large-
Signal Characteristics of
DDR IMPATTs Based
on Silicon
AritraAcharyya,
JayabrataGoswami, Suranjana
Banerjee, and J. P. Banerjee
National Conference on
Materials, Devices and
Circuits in
Communication
Technology, Burdwan,
7th
and 8th
February,
2014, pp. 1
In Proceedings of
National
Conference on
Materials, Devices
and Circuits in
Communication
Technology,
Burdwan
Millimeter-wave and
Noise Properties of
Si~Si1-
xGexHeterojunction
Double-Drift Region
MITATT Devices at 94
Suranjana Banerjee,
AritraAcharyya and J. P.
Banerjee
CODEC 2012, Kolkata,
India
Proc. Of CODEC
2012, Kolkata,
India
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
GHz
A proposed Method to
Study the Parasitic
Resistance of Ka-Band
Silicon IMPATT Diode
From Large-Signal
Electric Field Snap-
Shots
AritraAcharyya, Suranjana
Banerjee and J. P. Banerjee
CODIS-2012, Jadavpur
University, W. B., India
Proc. Of CODIS-
2012, Jadavpur
University, W. B.,
India
High Frequency
Performance limitations
of Si, GaAs and InP
IMPATTs based on
Avalanche Response
Time,”
AritraAcharyya, Suranjana
Banerjee and J. P. Banerjeein
National Conference on
E2NC 2012, SKFGI,
Mankundu, Hooghly,
W. B., India, February
3-4, 2012, pp. 1-4
Proceedings of
National
Conference on
E2NC 2012
Dependence of noise
properties on photon
flux incident on Silicon
MITATT device at
millimeter-wave window
frequencies,”,
Suranjana Banerjee,
AritraAcharyya, J. P. Banerjee
and M. Mitra
International
Conference on
Computer,
Communication,
Control and Information
Technology 2012,
Academy of
Technology, W. B.,
India, Procedia
Technology, Elsevier,
February 25-26, 2012,
vol. 4, pp. 431-436
Proceedings of
International
Conference on
Computer,
Communication,
Control and
Information
Technology 2012
Large-Signal Properties
of Diamond IMPATTs
at 94 GHz
AritraAcharyya, Suranjana
Banerjee and J. P. Banerjee
IET International
Conference on
Information Science and
Control Engineering,
2012
Dependence of
Avalanche Response
Time on Photon Flux
Incident on DDR Silicon
IMPATT Devices
AritraAcharyya and J. P.
Banerjee
The 32nd PIERS in
Moscow, Russia,
August 19-23, 2012
A Proposed Lateral
DDR IMPATT Structure
for better Millimeter-
wave Optical
Interaction”, ,
AritraAcharyya and J. P.
Banerjee
IEEE International
Conference on Devices,
Circuits and Systems
2012, Karunya
University, Coimbatore,
Tamil Nadu, India,
pp. 599-602, March
15-16, 2012
Laser Illumination on
Semiconductor
Avalanche Transit Time
J. P. Banerjee, National Seminar on
recent trends in
condensed matter
Proc. National
Seminar on recent
trends in condensed
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Devices Physics including Laser
application,
BurdwanUniversity,WB
,India, March - 2012.
matter Physics
including Laser
application,
Effect of Photo
Irradiation on the
Avalanche Response
Time of Millimeter-
wave DDR Silicon
IMPATTs
JayantaMukhopadhyay,AritraA
charyya and J. P. Banerjee
National seminar on
recent trends in
condensed matter
Physics including laser
application,
BurdwanUniversity,WB
,India, March,2012.
Proc. National
seminar on recent
trends in condensed
matter Physics
including laser
application,
BurdwanUniversity
Effect of optical
illumination on the
millimeter wave
properties of lateral and
vertical structures of
Silicon IMPATT device
AritraAcharya, Suranjana
Banerjee and J. P. Banerjee
UGC sponsored seminar
on recent trends in
Optoelectronics,.Jiaganj,
Murshidabad,WB,,
India, February,2012.
”,Proc.of UGC
sponsored seminar
on recent trends in
Optoelectronics,.Jia
ganj,
Murshidabad,WB
Effect of Junction
Temperature on the
Millimeter-wave
Performance of DDR
Silicon IMPATT Device
AritraAcharyya, Suranjana
Banerjee and J. P. Banerjee
National Conf. on
Materials , Devices and
Circuits in
Communication
Technology (MDCCT
2012),
BurdwanUniversity,WB
, India.
Proc. National
Conf. on Materials ,
Devices and
Circuits in
Communication
Technology
(MDCCT 2012),
BurdwanUniversity
,WB, India.
Terahertz Solid State
Sources for Terrestrial
Communication”,
J. P. Banerjee International Conf. on
Microwave, Antenna
and Remote Sensing
(ICMARS-2011),
Jodhpur, India
an Invited
paper,Proc.
International Conf.
on Microwave,
Antenna and
Remote Sensing
(ICMARS-2011),
Jodhpur, India
Effect of mobile space
charge on Si and 4H -
SiC based double drift
IMPATTs at sub-
millimeter wave window
frequency”,
NiratyayBiswas, Moumita
Mukherjee and J. P. Banerjee
International conference
on Microwave, Aneanna
and Remote Sensing
(ICMARS-2011),
Jodhpur, India
Proc. International
conference on
Microwave,
Aneanna and
Remote Sensing
(ICMARS-2011),
Jodhpur, India
Terahertz Performance
of Wz-GaN based DDR
Soumen Banerjee, Moumita
Mukherjee, Soma Rani Karan,
National Conference
MDCCT,BU,WB,India
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
IMPATT Devices Priyanka Roy Chowdhury,
Payel Roy, Ankita Choudhury
and J. P. Banerjee
(2010).
Effects of impurity
bumps on static and
dynamic characteristics
of group IV-IV SiC-
based IMPATT at Ka-
band
Moumita Mukherjee and J. P.
Banerjee
National Conference
MDCCT, (2010)
Simulation of the circuit
characteristics of a
millimeter-wave pulsed
IMPATT oscillator
embedded in a reduced –
height cavity
Arijit Das,
DiptadipChakraborty, J. Sanyal
and J. P. Banerjee
National Conference
MDCCT,( 2010)
Temperature
Distribution in a Mesa
Structure of Si-IMPATT
diode on a Semi-infinite
copper heat sink
B. Pal, A Acharya, Arijit Das
and J. P. Banerjee,
National Conference
MDCCT, (2010).
Studies on the
performance of Wz-GaN
DDR IMPATT diode at
optimum bias current for
THz frequencies
S. Banerjee, Moumita
Mukherjee and J. P. J. P.
Banerjee, AritraAcharyya and
Suranjana Banerjee
Temperature Transient
Effect on the Large-
Signal Properties and
Frequency Chirping in
Pulsed Silicon DDR
IMPATTs at 94 GHz”,
CODEC 2012, Kolkata,
India
High Frequency
Performance
limitationsof Si, GaAs
and InP IMPATTs
based on Avalanche
Response Time
AritraAcharyya,Suranjana
Banerjee and J.P. Banerjee
National Conf.( E2NC),
SKFGI, Mankundu,
Hooghly,WB,India,
2012
Proc. National
Conf.( E2NC),
SKFGI, Mankundu,
Hooghly,WB,India,
2012
DDR Pulsed IMPATT
sources at MM-wave
window frequency: high
power operation mode
Moumita Mukherjee and J. P.
Banerjee,
IEEE EDS Int. Conf. on
IEEE Micro/Nano
Devices, Structures and
Systems, Tamilnadu,
India, (MiNDSS-2010)
MM-wave performance
of DDR IMPATTs based
on cubic SiC
Moumita Mukherjee, S.
Banerjee and J. P. Banerjee
International Conf. on
Physics of
Semiconductor Devices,
XVth
IWPSD-2009,
New Delhi, India,
(December, 2009).
Proc. Of
International Conf.
on Physics of
Semiconductor
Devices, XVth
IWPSD-2009, New
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Delhi, India,
(December, 2009).
Mobile space-charge
effect on Terahertz
properties of Wz-GaN
based DDR IMPATT
oscillators
Moumita Mukherjee, S.
Banerjee and J. P. Banerjee,
International Conf. on
Devices, Circuits and
Systems ( CODEC ) ,
Kolkata, India,
(December ,2009).
Proc. International
Conf. on Devices,
Circuits and
Systems ( CODEC
) , Kolkata, India,
(December ,2009).
Direct optical injection
locking of a Ka-band Si
SDR IMPATT diode for
low-phase noise”,
Arijit Das, Moumita
Mukherjee, P. Bhattacharya, J.
P. Banerjee and S. K. Roy,
International
Symposium on
Microwave (ISM),
Bangalore, India,
(2008).
Proc. of
International
Symposium on
Microwave (ISM),
Bangalore, India,
(2008).
A proposed theoretical
model of impact
ionization rate under
carrier degeneracy
considering different
scattering phenomena” ,
Soumen Banerjee and J. P.
Banerjee,
International
Conference on
Microwave -08,
University of Rajasthan,
India. pp. 708-711,
(2008).
Proc. of
International
Conference on
Microwave -08,
University of
Rajasthan, India.
pp. 708-711,
(2008).
MM-wave properties of
photo-illuminated
double drift Indium
Phosphide IMPATTs at
elevated temperature
Moumita Mukherjee, J.
Mukherjee and J. P. Banerjee,
International Conf.
IEEE-ICMMT, China,
p. 334. (2008).
Proceedings of
International Conf.
IEEE-ICMMT,
China, p. 334.
(2008).
Effect of LASER
radiation on Si (100) p-n
junction : Simulation
studies and experimental
realization
M. Mukherjee, N. C. Mondal,
P. Bhattacharyya, J. P.
Banerjeeand S. K. Roy.
International
Symposium on
Microwave (ISM),
Bangalore, India (2008).
Proc. of
International
Symposium on
Microwave (ISM),
Bangalore, India
(2008).
Direct optical injection
locking of a Ka-band Si
SDR IMPATT diode for
low phase noise
A. Das, M. Mukherjee, P.
Bhattacharyya, N. C. Mondal,
M. K. Pandit, J. P. Banerjee
and S. K. Roy
International
symposium (ISM),
Bangalore, India (2008).
Proc. of
International
symposium (ISM),
Bangalore, India
(2008).
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Effect of punch through
on the breakdown
characteristics of 4H-
SiC IMPATT Diode
S. Banerjee and J. P. Banerjee, International
Conference on
Microwave 2008,
University of Rajasthan,
India, pp. 59-62, (2008)
Proc. of
International
Conference on
Microwave 2008,
University of
Rajasthan, India,
pp. 59-62, (2008)
Effect of optical
illumination on the
millimeter wave
properties of lateral and
vertical structures of
Silicon IMPATT device
AritraAcharya, Suranjana
Banerjee and J. P. Banerjee,
UGC sponsored seminar
on recent trends in
Optoelectronics,.Jiaganj,
Murshidabad,WB,,
India, February,2012
Proc.of UGC
sponsored seminar
on recent trends in
Optoelectronics,.Jia
ganj,
Murshidabad,WB,,
India,
February,2012
Effect of Junction
Temperature on the
Millimeter-wave
Performance of DDR
Silicon IMPATT Device
AritraAcharyya, Suranjana
Banerjee and J. P. Banerjee,
National Conf. on
Materials , Devices and
Circuits in
Communication
Technology (MDCCT
2012),
BurdwanUniversity,WB
, India
Proc. National
Conf. on Materials ,
Devices and
Circuits in
Communication
Technology
(MDCCT 2012),
BurdwanUniversity
,WB, India
Terahertz Solid State
Sources for Terrestrial
Communication
J. P. Banerjee, an Invited paper International Conf. on
Microwave, Antenna
and Remote Sensing
(ICMARS-2011),
Jodhpur, India
,Proc. International
Conf. on
Microwave,
Antenna and
Remote Sensing
(ICMARS-2011),
Jodhpur, India
Effect of mobile space
charge on Si and 4H -
SiC based double drift
IMPATTs at sub-
millimeter wave window
frequency
NiratyayBiswas, Moumita
Mukherjee and J. P. Banerjee
International conference
on Microwave, Aneanna
and Remote Sensing
(ICMARS-2011),
Jodhpur, India
Proc. International
conference on
Microwave,
Aneanna and
Remote Sensing
(ICMARS-2011),
Jodhpur, India
Terahertz Performance
of Wz-GaN based DDR
IMPATT Devices
Soumen Banerjee, Moumita
Mukherjee, Soma Rani Karan,
Priyanka Roy Chowdhury,
National Conference
MDCCT,BU,WB,India
(2010).
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Payel Roy, Ankita Choudhury
and J. P. Banerjee
Effects of impurity
bumps on static and
dynamic characteristics
of group IV-IV SiC-
based IMPATT at Ka-
band
Moumita Mukherjee and J. P.
Banerjee,
National Conference
MDCCT, (2010).
“Simulation of the
circuit characteristics of
a millimeter-wave
pulsed IMPATT
oscillator embedded in a
reduced – height cavity
Arijit Das,
DiptadipChakraborty, J. Sanyal
and J. P. Banerjee,
National Conference
MDCCT,( 2010)
Temperature
Distribution in a Mesa
Structure of Si-IMPATT
diode on a Semi-infinite
copper heat sink
B. Pal, A Acharya, Arijit Das
and J. P. Banerjee
National Conference
MDCCT, (2010).
Studies on the
performance of Wz-GaN
DDR IMPATT diode at
optimum bias current for
THz frequencies”,
S. Banerjee, Moumita
Mukherjee and J. P. J. P.
Banerjee,
CODEC 2012, Kolkata,
India
Temperature Transient
Effect on the Large-
Signal Properties and
Frequency Chirping in
Pulsed Silicon DDR
IMPATTs at 94 GHz
S. Banerjee, Moumita
Mukherjee and J. P. J. P.
Banerjee
CODEC 2012, Kolkata,
India
High Frequency
Performance
limitationsof Si, GaAs
and InP IMPATTs
based on Avalanche
Response Time”,
AritraAcharyya,Suranjana
Banerjee and J.P. Banerjee,
National Conf.( E2NC),
SKFGI, Mankundu,
Hooghly,WB,India,
2012
Proc. National
Conf.( E2NC),
SKFGI, Mankundu,
Hooghly,WB,India,
2012
DDR Pulsed IMPATT
sources at MM-wave
window frequency: high
power operation mode”,
Moumita Mukherjee and J. P.
Banerjee,
IEEE EDS Int. Conf. on
IEEE Micro/Nano
Devices, Structures and
Systems, Tamilnadu,
India, (MiNDSS-2010)
MM-wave performance
of DDR IMPATTs based
Moumita Mukherjee, S.
Banerjee and J. P. Banerjee
International Conf. on
Physics of
Proc. Of
International Conf.
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
on cubic SiC”, , Semiconductor Devices,
XVth
IWPSD-2009,
New Delhi, India,
(December, 2009)
on Physics of
Semiconductor
Devices, XVth
IWPSD-2009, New
Delhi, India,
(December, 2009)
Mobile space-charge
effect on Terahertz
properties of Wz-GaN
based DDR IMPATT
oscillators”, ,
Moumita Mukherjee, S.
Banerjee and J. P. Banerjee
International Conf. on
Devices, Circuits and
Systems ( CODEC ) ,
Kolkata, India,
(December ,2009)
Proc. International
Conf. on Devices,
Circuits and
Systems ( CODEC
) , Kolkata, India,
(December ,2009)
Direct optical injection
locking of a Ka-band Si
SDR IMPATT diode for
low-phase noise”,
Arijit Das, Moumita
Mukherjee, P. Bhattacharya, J.
P. Banerjee and S. K. Roy,
International
Symposium on
Microwave (ISM),
Bangalore, India, (2008)
Proc. of
International
Symposium on
Microwave (ISM),
Bangalore, India,
(2008)
A proposed theoretical
model of impact
ionization rate under
carrier degeneracy
considering different
scattering phenomena
Soumen Banerjee and J. P.
Banerjee,
International
Conference on
Microwave -08,
University of Rajasthan,
India. pp. 708-711,
(2008).
Proc. of
International
Conference on
Microwave -08,
University of
Rajasthan, India.
pp. 708-711,
(2008).
MM-wave properties of
photo-illuminated
double drift Indium
Phosphide IMPATTs at
elevated temperature
Moumita Mukherjee, J.
Mukherjee and J. P. Banerjee
International Conf.
IEEE-ICMMT, China,
p. 334. (2008).
Proceedings of
International Conf.
IEEE-ICMMT,
China, p. 334.
(2008).
Effect of LASER
radiation on Si (100) p-n
junction : Simulation
studies and experimental
realization
M. Mukherjee, N. C. Mondal,
P. Bhattacharyya, J. P.
Banerjeeand S. K. Roy.
International
Symposium on
Microwave (ISM),
Bangalore, India (2008).
Proc. of
International
Symposium on
Microwave (ISM),
Bangalore, India
(2008).
Direct optical injection
locking of a Ka-band Si
SDR IMPATT diode for
low phase noise
A. Das, M. Mukherjee, P.
Bhattacharyya, N. C. Mondal,
M. K. Pandit, J. P. Banerjee
and S. K. Roy.
International
symposium (ISM),
Bangalore, India (2008).
Proc. of
International
symposium (ISM),
Bangalore, India
(2008).
Effect of punch through
on the breakdown
characteristics of 4H-
S. Banerjee and J. P. Banerjee International
Conference on
Microwave 2008,
Proc. of
International
Conference on
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SiC IMPATT Diode University of Rajasthan,
India, pp. 59-62, (2008)
Microwave 2008,
University of
Rajasthan, India,
pp. 59-62, (2008)
Si / Si1-xGex DDR
IMPATTs as a potential
source for Millimeter
wave applications,
S. Banerjee, D. Chakraborty
and J. P. Banerjee
National Conference on
Device, Intelligent
systems and
Communication &
Networking (AEC-
DISC), Asansol, India,
pp. 187-192 (2008).
Proc. of National
Conference on
Device, Intelligent
systems and
Communication &
Networking (AEC-
DISC), Asansol,
India, pp. 187-192
(2008).
“Large signal model to
simulate the high
frequency properties of
optically controlled
IMPATT devices”, ,
J. P. Banerjee, S. Banerjee, I.
Ali and S. K. Ray
International
Conference on Radio
Science (ICRS),
Jodhpur, India (2008)
Proc. of IVth
International
Conference on
Radio Science
(ICRS), Jodhpur,
India (2008)
Mobile space charge
effect in 4H Silicon
Carbide IMPATT
diodes” ,
S. Mukherjee, S. Banerjee, J.
Mukherjee and J. P. Banerjee
IWPSD, 2007, IIT
(Mumbai) & TIFR,
India, pp. 268-272
(2007).
Proc. of IWPSD,
2007, IIT (Mumbai)
& TIFR, India, pp.
268-272 (2007).
Space charge effect in
silicon carbide SDR
Impatts
J. Mukhopadhyay and J. P.
Banerjee,
International
Conference on
Computers, Devices and
Communication
(CODEC-04), Institute
of RadioPhysics and
Electronics, University
of Calcutta, p.41
(2004),India.
Proc. of
International
Conference on
Computers,
Devices and
Communication
(CODEC-04),
Institute of
RadioPhysics and
Electronics,
University of
Calcutta, p.41
(2004),India.
Monte Carlo simulation
of noisy noise in
Electronic Devices”, ,
K. K. Ghosh, J. P. Banerjee and
K.P. Ghatak
International Workshop
on Physics of
Semiconductor Devices
(XII),India,(Narosa
Publishing House),
Vol.1, pp. 579-581
Proc.ofInternational
Workshop on
Physics of
Semiconductor
Devices
(XII),India,(Narosa
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(2003). Publishing House),
Vol.1, pp. 579-581
(2003).
On the density of states
functions in degenerate
Infrared and
Optoelectronic
materials”, ,
K.P. Ghatak, J.
Mukhopadhyay, K.K. Ghosh
and J. P. Banerjee
International Workshop
on Physics of
Semiconductor Devices
(XII),India,(Narosa
Publishing House),
Vol.2, pp. 956-958
(2003).
Proc.ofInternational
Workshop on
Physics of
Semiconductor
Devices
(XII),India,(Narosa
Publishing House),
Vol.2, pp. 956-958
(2003).
Optical control of DC
and Micro-wave
properties of Silicon
Carbide Avalanche
Transit Time Diodes”, ,
J. Mukhopadhyay, K.P. Ghatak
and J. P. Banerjee
International Workshop
on Physics of
Semiconductor Devices
(XII),India,(Narosa
Publishing House), Vol.
1, pp.956-958 (2003).
Proc.ofInternational
Workshop on
Physics of
Semiconductor
Devices
(XII),India,(Narosa
Publishing House),
Vol. 1, pp.956-958
(2003).
A theoretical model of
photo generation of
carriers in solar cells
based on direct bandgap
materials
T.P. Das and J. P. Banerjee International Workshop
on Physics of
Semiconductor Devices
(XII),India,(Narosa
Publishing House),
Vol.1, pp. 537-539
(2003).
,Proc.ofInternationa
l Workshop on
Physics of
Semiconductor
Devices
(XII),India,(Narosa
Publishing House),
Vol.1, pp. 537-539
(2003).
A generalized theoretical
model of Impatt
Ionization Rate in
Reverse Biased p-n
Junction”,
T.P. Das and J. P. Banerjee International Workshop
on Physics of
Semiconductor Devices
(XII),India,(Narosa
Publishing House),
Vol.1, pp. 534-536
(2003).
Proc.ofInternational
Workshop on
Physics of
Semiconductor
Devices
(XII),India,(Narosa
Publishing House),
Vol.1, pp. 534-536
(2003).
Quantum Tunneling
transport in MISIM
nanostructure by using
Double Box method
T.P. Das and J. P. Banerjee Proc. of International
Workshop on Physics of
Semiconductor Devices
(XII),India,(Narosa
Proc. of
International
Workshop on
Physics of
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Publishing House)
Vol.1,pp.531-
533(2003).
Semiconductor
Devices
(XII),India,(Narosa
Publishing House)
Vol.1,pp.531-
533(2003).
A proposed
Optoelectronic high
pressure sensor
T.P.Das and J. P. Banerjee National Conference in
Sensor Technology
(NCST),Delhi , (2002).
Proc. of National
Conference in
Sensor Technology
(NCST),Delhi ,
(2002).
Modeling and
Simulation of the
Breakdown
characteristics of 4H
silicon Carbide
Avalanche Diodes
J. Mukhopadyay, S. Karmakar,
S. De, A.K. Mukherjee, G.
Majumder and J. P. Banerjee
International
Conference of
Manufacturing ICM
2002, Bangladesh
University of
Engineering and
Technology. Dhaka,
August (2002).
proceedings of
International
Conference of
Manufacturing ICM
2002, Bangladesh
University of
Engineering and
Technology.
Dhaka, August
(2002).
The Einstein Relation in
Ultrathin films of
Ternary and Quaternary
Alloys in the presence of
an arbitrarily oriented
magnetic field
K.P. Ghatak, J. Mukhopadhyay
and J. P. Banerjee,
International Workshop
on the Physics of
Semiconductor Devices,
Vol.1, pp.347-355
(2001).
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol.1,
pp.347-355 (2001).
The Magnetic
Susceptibility in
Quantum Wires of
Dilute Magnetic
materials” ,
K.P. Ghatak, P.K. Bose and J.
P. Banerjee,
International Workshop
on the Physics of
Semiconductor Devices,
Vol.1, pp. 351-355
(2001)
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol.1, pp.
351-355 (2001)
A simple theoretical
analysis of the electronic
contribution to the
elastic constants in
strained layer
superlattices of non-
parabolic
semiconductors under
magnetic quantization
K.P. Ghatak, J. Mukhopadhyay
and J. P. Banerjee
International Workshop
on the Physics of
Semiconductor Devices,
V.2, p. 1299 (2001)
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, V.2, p.
1299 (2001)
On the photoemission K.P. Ghatak, J.Mukhopadhyay International Workshop Proc. XIth
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
from A3IIB2
VI
nanostructures”,
and J. P. Banerjee, on the Physics of
Semiconductor Devices,
Vol.2, p.1296 (2001)
International
Workshop on the
Physics of
Semiconductor
Devices, Vol.2,
p.1296 (2001)
On the photoemission
from A3IIB2
VI
nanostructures”,
K.P. Ghatak, J.Mukhopadhyay
and J. P. Banerjee,
International Workshop
on the Physics of
Semiconductor Devices,
Vol.2, p.1296 (2001)
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol.2,
p.1296 (2001)
Studies on the effect of
illumination on the
avalanche noise and
related millimeter-wave
properties of W-Band
p+nn
+InPImpatts” , ,
J. Mukhopadhyay, P.K. Bose
and J. P. Banerjee
International Workshop
on the Physics of
Semiconductor Devices,
Vol.2, pp.891-893
(2001).
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol.2,
pp.891-893 (2001).
Computer Simulation
Studies of
heterostructure Impatts
based on Si1-XGeX / Si at
W-band frequencies
J. Mukhopadhyay and J. P.
Banerjee, A. Chakraborty
International Workshop
on the Physics of
Semiconductor Devices,
Vol. 2, pp.857-860
(2001).
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol. 2,
pp.857-860 (2001).
Quantum Mechanical
Model of MISIM
nanostructures
T.P. Das, Soumen Banerjee and
J. P. Banerjee
International Workshop
on the Physics of
Semiconductor Devices,
Vol.1, pp. 338-342
(2001).
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol.1, pp.
338-342 (2001).
Noise behaviour in
InP/InGaAs Superlattice
Avalanche
Photodetectors for Fibre
Optic Communication
Systems”, ,
C. Kumar, J, Mukhopadhyay,
K.K. Ghosh and J.P. Banerjee
International Workshop
on the Physics of
Semiconductor Devices,
Vol-1, pp. 203-207
(2001)
Proc. XIth
International
Workshop on the
Physics of
Semiconductor
Devices, Vol-1, pp.
203-207 (2001)
Effect of optical
injection of minority
carriers on the negative
resistance and
J. Mukhopadhyay and J. P.
Banerjee
APSYM 2000, National
Symp. on Antenna
&propogation, Cochin
University of Science
Proc. of APSYM
2000, National
Symp. on Antenna
&propogation,
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admittance of W-Band
DDR InPImpatts”, ,
and Technology,
Cochin, pp. 246-247
(2000).
Cochin University
of Science and
Technology,
Cochin, pp. 246-
247 (2000).
Optimization of Bump
Parameters of 94GHz
Low-High-Low Impatts
under optical
illumination”, ,
J. Mukhopadhyay, P.P.
Bhattacharya and J. P. Banerjee
Symp. on advances in
Microwave, Millimeter-
wave and Infrared
Technology (SAMMIT
99), Calcutta, p.47
(1999).
Proc. Symp. on
advances in
Microwave,
Millimeter-wave
and Infrared
Technology
(SAMMIT 99),
Calcutta, p.47
(1999).
Optical control of RF
properties of 94 GHz
Low-High-Low Indium
Phosphide Impatts
through the variation of
Bump Width” , ,
J. Mukhopadhyay and J. P.
Banerjee
INCURSI (International
Conference of the Union
of Radio Science,
India), Burdwan
University, Burdwan,
p.c-91, (1999).
Proc. INCURSI
(International
Conference of the
Union of Radio
Science, India),
Burdwan
University,
Burdwan, p.c-91,
(1999).
Quasi Read DDR
Impatts for millimeter-
wave communication at
W-band frequencies,
J. P. Banerjee Symp. on recent trends
in Electronics and
Communication
Technology beyond
2000, IETE, Calcutta
(1998).
Proc. Symp. on
recent trends in
Electronics and
Communication
Technology beyond
2000, IETE,
Calcutta (1998).
Simulation of noise
properties of avalanche
photodetectors”, J. P.
Banerjee, K. Biswas, S.
Mukherjee, ,
J. Mukhopadhyay and D. N.
Bose
XXIV NatioalSymp. of
the optical society of
India in Optics and
Opto-electronics,
Calcutta
Proc. XXIV
NatioalSymp. of the
optical society of
India in Optics and
Opto-electronics,
Calcutta, TS-vi A-
7, p.62 (1997).
Double-Drift Single and
Double Low-High-Low
Impatt diodes for
improvement of device
performance
J. Mukhopadhyay and J. P.
Banerjee,
DAE Solid State
Physics Symp., Bhaba
Atomic Research
Centre, Mumbai,
DAE Solid State
Physics Symp.,
Bhaba Atomic
Research Centre,
Mumbai, Vol. 39C,
p.424 (1996).
Bias current
optimization of double
J. Mukhopadhyay, R.
Mukherjee and J. P. Banerjee
Symp. On Frontiers of
Radio Science,
Proc. Symp. On
Frontiers of Radio
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drift InP diode at 94 and
140 GHz windows”,
INCURSI (Indian
National Committee for
the International Union
of Radio Science),
Calcutta and Burdwan,
p.XI, 9-12 (1996).
Science, INCURSI
(Indian National
Committee for the
International Union
of Radio Science),
Calcutta and
Burdwan, p.XI, 9-
12 (1996).
Studies on the optical
control of millimeter-
wave Impatt devices by
computer simulation and
modeling techniques
J. P. Banerjee and R.
Mukherjee
SPIE Conf. on Physics
and Simulation of
optoelectronic Devices
II, Los Angeles USA
(1994).
Effect of avalanche
expansion in Silicon
DDRs for operation in
F,D and G bands
S. P. Pati, J. P. Banerjee and S.
K. Roy
International
Conference on
Millimeter wave and
Microwave, Defence
Electronics Application
Laboratory, Dehra Dun
(India), p.131 (1990).
Proc. International
Conference on
Millimeter wave
and Microwave,
Defence Electronics
Application
Laboratory, Dehra
Dun (India), p.131
(1990).
design considerations of
mm-wave silicon double
Read Impatt Diodes
J. P. Banerjee, S. P. Pati and S.
K. Roy
International Conf. on
Semiconductor
Materials and Devices,
Delhi ,India (1988).
Proc. International
Conf. on
Semiconductor
Materials and
Devices, Delhi
,India (1988).
Studies of Low-High-
Low and High-Low
Impatts based on GaAs
and InP for mm-wave
frequencies
J. P. Banerjee and S.K. Roy, International Conf. on
Millimeter wave and
Microwave, Defence
Electronics Application
Laboratory, Dehra Dun
(India),
Proc. International
Conf. on Millimeter
wave and
Microwave,
Defence Electronics
Application
Laboratory, Dehra
Dun (India), p.138
(1990).
Design of diffusion
profile for optimum
performance of SDR
silicon Impatts
J. P. Banerjee, M. Mitra, A.
Ganguly and S. K. Roy
National Conf. on
Electronic Circuits and
Systems, Roorkee
University, Roorkee
,India
, Proc. National
Conf. on Electronic
Circuits and
Systems, Roorkee
University,
Roorkee ,India,
p.501 (1989).
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Tunability of Silicon
DAR diode over discrete
microwave frequency
bands
J. P. Banerjee, S. P. Pati and S.
K. Roy
National Conference on
Electronic Circuits and
Systems, Roorkee
University ,India,
(1989).
Proc. National
Conference on
Electronic Circuits
and Systems,
Roorkee University
,India, (1989).
A Study on the
breakdown
characteristics of Indium
Phosphide avalanche
diode using
experimental ionization
rates of charge carriers
in InP
J. P. Banerjee, S. P. Pati and S.
K. Roy
International on Conf.
Semiconductor
Materials and Devices,
Delhi (1988).
Proc. International
on Conf.
Semiconductor
Materials and
Devices, Delhi
(1988).
High power design
considerations of mm-
wave silicon double
Read Impatt Diodes
J. P. Banerjee, S. P. Pati and S.
K. Roy
International Conf. on
Semiconductor
Materials and Devices,
Delhi ,India (1988)
Proc. International
Conf. on
Semiconductor
Materials and
Devices, Delhi
,India (1988)
Heavy bias current
characteristics of high
efficiency silicon double
drift diodes
J. P. Banerjee and S. K. Roy International
Symposium on
Electronic circuits and
systems, IIT Kharagpur
(India)
, Proc. International
Symposium on
Electronic circuits
and systems, IIT
Kharagpur (India),
p.457 (1987).
Oscillatory behaviour of
high frequency negative
resistance of Si n+pp
+
and p+nn
+Impatt diodes
with enhancement of
reverse saturation
current
N. Mazumder, J. P. Banerjee
and S. K. Roy
Symposium on
Electronic
Communication,
Burdwan (India), p.97
(1987).
Proc. Symposium
on Electronic
Communication,
Burdwan (India),
p.97 (1987).
Effect of crystal
orientation on
microwave
characteristics of
GaAsp+nn
+ avalanche
diode”, ,).
S. P. Pati, J. P. Banerjee and S.
K. Roy
Solid State Physics
Symposium, BARC,
Bombay (1987
Proc. Solid State
Physics
Symposium,
BARC, Bombay
(1987
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Silicon Impatt diode as a
solid state device for
mm-wave
communication system
J.P. Banerjee and S. K. Roy 1st Indian Engg.
Congress, Calcutta
Proc. of 1st Indian
Engg. Congress,
Calcutta ,pp.I-IIB,
07-01 - 07-09,
(Jan. 1987)
Computer aided design
and optimization of
double drift region
Indium Phosphide
Impatts with Low-High-
Low doping profile
J. P. Banerjee, S. P. Pati and S.
K. Roy
National Seminar on
Semiconductors and
Devices, Calcutta, (Dec.
1986).
ProcVIth
National
Seminar on
Semiconductors
and Devices,
Calcutta, (Dec.
1986).
Studies of the effect of
carrier current
multiplications on the
negative resistance
profiles and the
admittance
characteristics of p+nn
+
IMPATTs
N. Mazumder, J. P. Banerjee
and S. K. Roy
VIth
National seminar on
Semiconductors and
Devices, Calcutta, (Dec.
1986).
Proc. VIth
National
seminar on
Semiconductors
and Devices,
Calcutta, (Dec.
1986).
study on the effect of
temperature on d.c. and
high frequency
properties of silicon
double drift Impatts
S. P. Pati, J. P. Banerjee and S.
K. Roy
VIth
National Seminar
on Semiconductors and
Devices, Calcutta, (Dec
1986)
Proc. VIth
National
Seminar on
Semiconductors
and Devices,
Calcutta, (Dec
1986)
Studies of the high
frequency negative
resistance profiles and
the admittance
characteristics of p+nn
+
and n+pp
+ Indium
Phosphide IMPATTs
J. P. Banerjee, S. P. Pati and S.
K. Roy
Proc. Fifth National
Seminar on the Physics
of Semiconductors and
Devices, Varanasi, P.
G1 (1986).
Proc. Fifth National
Seminar on the
Physics of
Semiconductors
and Devices,
Varanasi, P. G1
(1986).
Computer studies on the
properties of millimeter-
wave InP IMPATTs
J. P. Banerjee, and S. K. Roy J. N. Bhar
Commemoration Symp.
on Advances in Radio
Science in India,
Calcutta (Dec. 1986)
Proc. J. N. Bhar
Commemoration
Symp. on Advances
in Radio Science in
India, Calcutta
(Dec. 1986)
Computer studies of the
Physics of the high
efficiency of High-Low
and Low-High-Low
Indium Phosphide
Impatts having impurity
charge bumps
J. P. Banerjee, S. P. Pati and S.
K. Roy
National Seminar on
the Physics of
Semiconductors and
Devices, Jaipur, pp.
241-246 (Jan. 1985)
Proc. National
Seminar on the
Physics of
Semiconductors
and Devices,
Jaipur, pp. 241-246
(Jan. 1985)
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Computer studies on
silicon mm-wave double
drift Impatt diodes
S. P. Pati, J. P. Banerjee, and S.
K. Roy
Symp. on Frontiers of
Communication,
Calcutta, Dec (1985)
Proc. Symp. on
Frontiers of
Communication,
Calcutta, Dec
(1985)
Numerical simulation of
Impatt diodes”, ,
J. P. Banerjee, S. P. Pati and S.
K. Roy
International
Conference on the
Physics and Technology
of Compensated
Semiconductors, IIT,
Madras
Proc. of
International
Conference on the
Physics and
Technology of
Compensated
Semiconductors,
IIT, Madras, p. 56
(1985)
Potentiality of Indium
phosphide as a new
material for Impatt
diodes,
, J. P. Banerjee, S. P. Pati and
S. K. Roy
International
Conference on Physics
and Technology of
Compensated
Semiconductor, IIT,
madras, p.62 (1985).
Proc. of
International
Conference on
Physics and
Technology of
Compensated
Semiconductor, IIT,
madras, p.62
(1985).
A study on negative
resistance profiles of
double drift diodes
J. P. Banerjee, S.P.Pati and S.
K. Roy
National Seminar on the
Physics of
Semiconductors and
Devices, Indian Institute
of Science, Bangalore,
Jan 3-7, (1984)
Proc. National
Seminar on the
Physics of
Semiconductors
and Devices, Indian
Institute of Science,
Bangalore, Jan 3-7,
(1984)
A study of the effect of
mobile space charge on
the extension of
avalanche zone and
microwave conversion
efficiency of GaAs and
InPImpatt diodes
J. P. Banerjee, S. P. Pati and S.
K. Roy
IETE Symposium on
Microwave
Communication,
Calcutta, April 8-9,
(1983).
Proceedings of
IETE Symposium
on Microwave
Communication,
Calcutta, April 8-9,
(1983).
Computer studies of
microwave properties of
double drift Indium
Phosphide Impatt diodes
J. P. Banerjee, S. P. Pati and
S.K.Roy
silver Jubilee
Symposium on
Electronics and
Communication, IIT,
Bombay,(Feb, 1983)
Proc. of silver
Jubilee Symposium
on Electronics and
Communication,
IIT, Bombay, pp.
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10-11 (Feb, 1983)
A Computer study on
millimeter wave
performance of silicon
double drift diodes of
different doping profiles
J. P. Banerjee, S.P. Pati and S.
K. Roy
Silver Jubilee
Symposium on
Electronics and
Communication, IIT,
Bombay, pp. 1-6 (Feb
1983).
Proc. Silver Jubilee
Symposium on
Electronics and
Communication,
IIT, Bombay, pp. 1-
6 (Feb 1983).
A computer study of the
breakdown voltage and
width of avalanche
multiplication zone for
n+pp
+ Indium Phosphide
Devices
J. P. Banerjee, S.P.Pati and S.
K. Roy,
Silver Jumble Physics
Symposium,
Department of Atomic
Energy, BARC,
Bombay, pp. 493-494
(1981-82)
Proc. Silver Jumble
Physics
Symposium,
Department of
Atomic Energy,
BARC, Bombay,
pp. 493-494 (1981-
82)
Effect of crystal
orientation on the
performance of double
drift GaAs Impatt diodes
S. P. Pati, J. P. Banerjee and S.
K. Roy
Silver Jubilee Physics
Symposium,
Department of Atomic
Energy, BARC,
Bombay, pp. 495-496
(1981-82)
Proc. Silver Jubilee
Physics
Symposium,
Department of
Atomic Energy,
BARC, Bombay,
pp. 495-496 (1981-
82)
A study of the
enhancement of
efficiency and small
signal negative
resistance in mm-wave
silicon DDRs by highly
doped regions near the
metallurgical junction
J. P. Banerjee, S. P. Pati and S.
K. Roy
International
Symposium on
Microwave and
Communication, IIT,
Kharagpur, p. 322
(1981)
Proc.
International
Symposium on
Microwave and
Communication,
IIT, Kharagpur, p.
322 (1981)
A study on the reduction
of avalanche zone width
and efficiency
enhancement of silicon
DDRs by a thin highly
doped region near the
metallurgical junction
S. P. Pati, J. P. Banerjee and S.
K. Roy
Dept. of Atomic Energy
Symposium on Solid
State Physics, New
Delhi, p. 151 (1980).
Proc. Dept. of
Atomic Energy
Symposium on
Solid State Physics,
New Delhi, p. 151
(1980).
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Journal:
Title of the
Paper
Author List Name of the
Journal
Volume, No., Page,
Year Review on
Theoretical
Background,
Fabrication
Techniques,
Methodologies and
Applications of
Microfluidic Devices
and Nanofluidic
Devices
Subhadeep
Mukhopadhyay, J.P
Banerjee
Journal of
Nanoscience,
Nanoengineering
and Applications
ISSN: 2231-1777(online),
ISSN: 2321-5194(print) Volume
5, Issue 3,2015.
Experimental Studies
of Surface-driven
Capillary Flow in
PMMA Microfluidic
Devices prepared by
Direct Bonding
technique and Passive
separation of
Microparticles in
Microfluidic
Laboratory-on-a-chip
Systems
SubhadeepMukhopadhya
y, J. P. Banerjee,
AshishMathur, M.
Tweedie , J. A.
Mclaughlin and
SusantaSinha Roy
Surface Review and
Letters, World
Scientific
Publishing
Company
DOI:
10.1142/S0218625X1550050X,
Vol. 22, No. 3 (2015) 1550050,
2015
A Four-Step Iterative
Design Optimization
Technique for DLHL
IMPATTs
Suranjana Banerjee,
Aritra Acharyya, Monojit
Mitra and J. P. Banerjee
IETE Journal of
Research [India],
Taylor & Francis
Vol 60, Issue 4, 2014
Quantum Drift-
Diffusion Model for
IMPATT Devices
AritraAcharyya,
SubhashriChatterjee,
JayabrataGoswami,
Suranjana Banerjee and J.
P. Banerjee
Journal of
Computational
Electronics
vol. 13, pp. 739-752, 2014
Estimation of Most
Favorable Optical
Window Position
Subject to Achieve
Finest Optical Control
of Lateral DDR
IMPATT Diode
Designed to Operate
at W-Band
AritraAcharyya,
JayabrataGoswami,
Suranjana Banerjee and J.
P. Banerjee
Radioengineering vol. 23, no. 2, pp. 739-753,
2014
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Optical Control of
Large-Signal
Properties of
Millimeter-Wave and
Sub-Millimeter-Wave
DDR Si IMPATTs
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Journal
Computational
Electronics
vol. 13, pp. 408-424, 2014
Influence of Skin
Effect on the Series
Resistance of
Millimeter-Wave of
IMPATT Devices
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Journal
Computational
Electronics,
vol. 12, issue 3, pp. 511-525,
2013
Effects of liquid
viscosity, surface
wettability and
channel geometry on
capillary flow in SU8
based microfluidic
devices
SubhadeepMukhopadhya
y , J.P. Banerjee and S.S.
Roy
International
Journal of Adhesion
& Adhesives
42 (2013) 30–35
Potentiality of
Semiconducting
Diamond as Base
Material of
Millimeter-Wave and
Terahertz IMPATT
Devices
AritraAcharyya,
Suranjana Banerjee andJ.
P. Banerjee
Journal of
Semiconductors
vol. 35, no. 3, pp. 034005-1-11
Large-Signal
Characterization of
DDR Silicon
IMPATTs Operating
up to 0.5 THz
AritraAcharyya,JitChakra
borty, Kausik Das,
SubirDatta, Pritam De,
Suranjana Banerjee and J.
P. Banerjee
International
Journal of
Microwave and
Wireless
Technologies,
vol. 5, no. 5, pp. 567-578, 2013
Large-Signal
Characterization of
DDR Silicon
IMPATTs Operating
in Millimeter-Wave
and Terahertz Regime
AritraAcharyya,JitChakra
borty, Kausik Das,
SubirDatta, Pritam De,
Suranjana Banerjee and J.
P. Banerjee
Journal of
Semiconductors,
vol. 34, no. 10, 104003-8, 2013
Diamond Based DDR
IMPATTs: Prospects
and Potentiality as
Millimeter-Wave
Source at 94 GHz
Atmospheric Window
AritraAcharyya,
KoyelDatta, Raya Ghosh,
MonalisaSarkar,
RoshmySanyal, Suranjana
Banerjee and J. P.
Banerjee
Radioengineering, vol. 22, no. 2, pp. 624-631,
2013
Effect of Photo-
Irradiation on the
Noise Properties of
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
International
Journal of
Electronics 2013
DOI:
10.1080/00207217.2013.830460
.
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Double-Drift Silicon
MITATT Device
A Proposed
Simulation Technique
to Study the Series
Resistance and
Related Millimeter-
Wave Properties of
Ka-Band Si
IMPATTs from the
Electric Field Snap-
Shots
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
International
Journal of
Microwave and
Wireless
Technologies
vol. 5, no. 1, pp. 91-100, 2013
Noise Performance of
Heterojunction DDR
MITATT Devices
Based on Si~Si1-xGex
at W-Band
Suranjana Banerjee,
AritraAcharyya and J. P.
Banerjee
Active and Passive
Electronic
Components [USA],
vol. 2013, pp. 1-7, 2013.
Effect of Junction
Temperature on the
Large-Signal
Properties of a 94
GHz Silicon Based
Double-Drift Region
Impact Avalanche
Transit Time Device
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Journal of
Semiconductors
[China], Accepted,
Publication
Schedule: vol. 34, issue 1, 2013
Effects of Channel
Aspect Ratio, Surface
Wettability and
Liquid Viscosity on
Capillary Flow
Through PMMA
Sudden Expansion
Microchannels
SubhadeepMukhopadhya
y, J. P. Banerjee and S. S.
Roy
Advanced Science
Focus, American
Scientific
Publishers,
Vol. 1, pp. 1–6, 2012
Optical Control of
Millimeter-wave
Lateral Double-Drift
Region Silicon
IMPATT Device
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Radioengineering vol. 21, no. 4, pp. 1208-1217,
2012
Large-Signal
Simulation of 94 GHz
Pulsed DDR Silicon
IMPATTs Including
the Temperature
Transient Effect
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Radioengineering vol. 21, no. 4, pp. 1218-1225,
2012
Design and simulation AritraAcharyya and J. P. Journal of ], vol. 14, issue 7 - 8, pp. 630-
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
of silicon carbide
poly-type double-drift
region avalanche
photodiodes for UV
sensing
Banerjee Optoelectronics and
Advanced Materials
[Romania
639, July-August 2012
Optical Control of
Millimeter-wave
Double-Drift Region
Silicon IMPATT
Device
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Radioengineering [Czech and Slovak], Revised on
20th
August, 2012
Potentiality of
IMPATT Devices as
Terahertz Source: An
Avalanche Response
Time Based Approach
to Determine the
Upper Cut-off
Frequency Limits
AritraAcharyya and J. P.
Banerjee
IETE Journal of
Research [India]
Accepted, Publication Schedule:
March-April 2013
Analysis of Photo-
Irradiated Double-
Drift Region Silicon
Impact Avalanche
Transit Time Devices
in the Millimeter-
wave and Terahertz
Regime
AritraAcharyya and J. P.
Banerjee,
Terahertz Science
and Technology
[China]
vol. 5, no. 2, pp. 97-113, 2012
Effect of Package
Parasitics on the
Millimeter-wave
Performance of DDR
Silicon IMPATT
Device Operating at
W-band
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee,
Journal of Electron
Devices [France],
vol. 13, pp. 960-964, 2012
Calculation of
Avalanche Response
Time for Determining
the High Frequency
Performance
Limitations of
IMPATT Devices
AritraAcharyya,
Suranjana Banerjee and J.
P. Banerjee
Journal of Electron
Devices [France],
vol. 12, pp. 756-760, 2012
Dependence of DC
and Small signal
Properties of Double
Drift Region Silicon
IMPATT device on
AritraAcharyya,Suranjana
Banerjee and J. P.
Banerjee
Journal of Electron
devices,
Vol.12, pp. 725-729, (2012)
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junction temperature
Effect of tunneling
current on mm-wave
IMPATT devices
A.Acharyya, M.
Mukherjee and J. P.
Banerjee
International
Journal of
Electronics,
(in press),(2012).
Heat sink design for
IMPATT diode
sources with different
base materials
operating at 94 GHz
AritraAcharyya, Jayanta
Mukherjee, Moumita
Mukherjee and J. P.
Banerjee
Archives of Physics
Research”,
Vol 2(1), pp.107-126, (2011).
A comparative study
on the effect of
optical illumination
on Si1-xGex and Si
based DDR IMPATT
diode at W-band
Aritra charyya and J. P.
Banerjee
Iranian Journal of
Electrical and
Electronic
Engineering
(IJEEE)
Vol.7, No.3, pp.179-189, (2011)
Heat sink design and
Temperature
distribution analysis
forMillimeter Wave
IMPATT oscillators
using finite difference
method
AritraAcharyya and J. P.
Banerjee
Archives of Applied
Science Research,
Vol.3(2): pp.107-126, (2011)
Influence of Tunnel
Current on DC and
Dynamic Properties
of Silicon Based
Terahertz IMPATT
Source
AritraAcharyya, M.
Mukherjee and J. P.
Banerjee
Terahertz Science
and Technology
vol. 4, no. 1, pp. 26-41,
March,(2011).
Noise in Millimeter-
wave Mixed
Tunneling Avalanche
Transit Time Diodes
AritraAcharyya, Moumita
Mukherjee and J. P.
Banerjee
Archivesof Applied
Science Research
[India],
vol. 3, issue 1, pp. 250-266,
2011
Design and
optimization of pulsed
mode Silicon based
DDR IMPATT diode
operating at 0.3 THz
AritraAcharyyaand J. P.
Banerjee
International
Journal of
Engineering Science
and Technology
Vol.3, No. 1, pp.332-339,
(2011)
Study of Efficiency of
Ka-Band IMPATT
Diodes and Oscillator
around Optimized
Condition
Tapas kr. Pal and J. P.
Banerjee
International
Journal of
Advanced Science
and Technology
vol. 26, pp.33-45,
January,(2011).
Temperature
Distribution inside
A. Acharyya, B. Pal and
J. P. Banerjee
International
Journal of
vol. 2, issue 10, pp. 5142-5149,
(2010)
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Semi-infinite Heat
sinks for IMPATT
sources
Engineering Science
and Technology
Design of Bias Filter
For Waveguide
Structures of
Millimeter Wave Si-
IMPATT diode
oscillators at 94 GHz
(W-band)
AritraAcharyya, Arijit
Das and J. P. Banerjee
Journal of
Electronic
Engineering
Research
Vol. 2, No. 4, pp.543-
552,(2010)
Heat Sink
Temperature Profile
of Ring Geometry
DDR IMPATT Diode
A. Acharyya, J. P.
Banerjee
Journal of
Telecommunication
s
vol. 6, issue 1, pp. 27-31,
(2010).
Noise Performance of
Millimeter-wave
Silicon based Mixed
Tunneling Avalanche
Transit Time
(MITATT) Diode
AritraAcharyya, M.
Mukherjee, and J. P.
Banerjee
World Academy of
Engineering Science
and Technology
vol. 4, no. 8, pp. 861-868,
(2010).
Comparison between
2-D temperature
distribution analysis
inside a semi-infinite
copper heat sink for
mesa and ring
structure of Si-
IMPATT diodes using
analytic method and
finite difference
method
AritraAcharyya, B. Pal
and J. P. Banerjee
International
Journal of
Electronic
Engineering
Research
Vol.2, No. 4, pp.553-
567,(2010).
Modeling,
Simulation,
Optimization and
Experimental
verification of the
performance of Ka-
band Resonant-Cap
IMPATT Oscillator
Tapas kr. Pal, J. V. Prasad
and J. P. Banerjee
International
Journal of
Engineering Science
and Technology”,
vol. 2, no. 10, pp. 5440-5451,
(2010).
Study of various
Tuning Properties and
Injection Locking of
Resonant-Cap
IMPATT Oscillator
Tapas kr. Pal, J. V. Prasad
and J. P. Banerjee
International
Journal of
Engineering and
Technology
vol. 2, no. 5, pp. 329-335,
(2010).
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
A Comparative Study
On Indium
Phosphide and α-
Gallium Nitride based
IMPATT oscillators
for Terahertz
Communication
JayantaMukhopadhyay,
Soumen Banerjee,
Moumita Mukherjee and
J.P.Banerjee
Journal of
Telecommunicati
Vol.3, Issue 1, pp. 14-21
,(2010).
Design Fabrication
and RF
Characterization of
Ka-band Silicon
IMPATT diode
Tapas kr. Pal and J. P.
Banerjee
International
Journal of
Engineering Science
and Technology
vol. 2, no. 9, pp. 4775-4790,
(2010)
Studies on the
performance of Wz-
GaN DDR IMPATT
diode at optimum bias
current for THz
frequencies
SoumenBanerjee,
Moumita Mukherjee and
J. P. Banerjee
International
Journal of
Advanced Science
and Technology
Korea, Vol 16, March ,(2010).
Studies on optical
modulation of III-V
GaN and InP based
DDR IMPATT diode
at sub-millimeter
wave frequency
Soumen Banerjee and J.
P. Banerjee
International
Journal of
Engineering Science
and Technology
Vol 2(7), pp. 2790-2801, (2010)
DDR Pulsed
IMPATT sources at
MM-wave window
frequency: high
power operation mode
MoumitaMukherjee
,Soumen Banerjee and J.
P. Banerjee
International
Journal of
Advanced Science
and Technology”
Korea, Vol 19, pp.1-12, March
(2010).
Studies on optical
modulation of III-V
GaN and InP based
DDR IMPATT diode
at sub-millimeter
wave frequency
Soumen Banerjee and J.
P. Banerjee
International
Journal of
Engineering Science
and Technology
Vol 2(7), pp. 2790-2801, (2010)
DDR Pulsed
IMPATT sources at
MM-wave window
frequency: high
power operation mode
MoumitaMukherjee
,Soumen Banerjee and J.
P. Banerjee
International
Journal of
Advanced Science
and Technology”
Korea,
Vol 19, pp.1-12, March (2010).
Design, Analysis and
Simulation of
S. Karmakar and J. P.
Banerjee
V U Journal of
Physics” (2004).
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140GHz p+-n-n
+ Si1-
XGeX/Si Hetero-
structureImpatts
A simple theoretical
analysis of the
thermoelectric power
in Ultra-thin films of
Non-Parabolic
Semiconductors in the
presence of an
arbitrarily oriented
magnetic Field
K. P. Ghatak, J. P.
Banerjee and B.Nag,
ActaPhysica
Universities
Commenianae”,
Vol. 39, pp. 31-40 (1998)
The carrier
contribution to the
Elastic Constant in
Small Gap Materials
K.P. Ghatak, J. P.
Banerjee and B. Nag
Journal of Applied
Physics, USA
Vol. 83(3), pp. 1420-1425
(1998)
Computer studies of
quasi read gallium
arsenide Impatt diode
including the effect of
space charge
J. P. Banerjee, S. Ghosh,
B. Nag and K.P. Ghatak,
International
Journal of
Electronics (UK)
Vol. 82, No. 4, pp.335-345
(1997).
On the electronic
contribution to the
elastic constants of Bi
in the presence of an
arbitrarily oriented
quantizing magnetic
field : Theory and
Suggestion for
experimental
Determination
K. P. Ghatak, J. P.
Banerjee and B. Nag
ActaPhysica
Universities
Comenianae
Vol. 30, p.71 (1996).
A simple theoretical
analysis of the carrier
contribution to the
elastic constants on
Non-Linear Optical
and Opto electronic
materials
K.P. Ghatak, J. P.
Banerjee, M. Mitra and B.
Nag
Non Linear Optics pp. 1-27 (1996).
A simple analysis of
the electronic
contribution to the
elastic constants in
ultrathin films of
Bismuth in the
presence of a
J. P. Banerjee, B. Nag and
K.P. Ghatak
Physica Status
Solidi
Vol.93, p.205 (1996)
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
quatizing magnetic
field
On the carrier
contribution to the
elastic constants in
nonlinear Optical and
Optoelectronic
compounds under
cross field
configuration :
Theory and
suggestion for
experimental
determination
K.P. Ghatak, J. P.
Banerjee, B. Goswami
and B. Nag
Nonlinear Optics Vol.16, p. 193 (1996)
The electronic
contribution to the
elastic constants in
ultrathin films of
ternary and
quarternary alloys in
the presence of an
arbitrarily oriented
magnetic field :
Theory and
suggestion for
experimental
determination
K.P. Ghatak, J. P.
Banerjee and D.
Bhattacharyya
Nanotechnology
(IOP Group, UK)
Vol.7, p. 110 (1996).
On the Einstein
relation for the
diffusivity – mobility
ratio in n-channel
inversion layers on
non-linear optical
materials in the
presence of a parallel
magnetic field :
Theory and
suggestion for
experimental
determination
, K.P.Ghatak, J. P.
Banerjee, M. Mitra and B.
Nag
Nonlinear Optics pp. 1-16 (1996)
Studies on avalanche
phase delay and the
admittance of an
optically illuminated
Indium Phosphide
J. P. Banerjee, R.
Mukherjee, J.
Mukhopadhyay and P.N.
Mallik
Physica Status
Solidi (a)
Vol. 153, pp. 567-579 (1996)
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Avalanche Transit
Time Diode at
millimeter-wave
window frequencies
Electronic
contribution to the
Magneto-elastic
Constants in Quantum
Wells of Bismuth
K.P. Ghatak, J. P.
Banerjee and B. Nag
Journal of Wave
Material Interaction,
USA
Vol.10, No.2, pp. 11-34 (1995)
A simple Theoretical
Analysis of the
Faraday Rotation
Mass in Non-
Parabolic Material
K.P. Khatak, B. Nag,
M.Mitra and J. P.
Banerjee
Journal of Wave
Material Interaction
(USA)
Vol. 10, No.2, pp.11-34 (1995)
Calculation of the
shift of avalanche
Transit time Phase
delay due to optically
injected carriers in
Indium Phosphide
Avalanche Diodes
J. P. Banerjee and R.
Mukherjee
Electronic Letters
(UK)
Vol. 30, p.1716 (1994).
Effect of electron and
hold dominant
photocurrent on the
millimeter wave
properties of indium
Phosphide Impatt
diode at 94 GHz
window under optical
illumination
J.P. Banerjee and R.
Mukherjee
Semiconductor
Science and
Technology (UK)
Vol.9, pp. 1-4 (1994).
Space charge
dependence of
negative resistance
avalanche layer width
and avalanche
resonance frequency
SDR p+nn
+ silicon
impatt diode with
optimized doping
profile
J. P. Banerjee, A.
Ganguly and S. P. Pati
Physica Status
Solidi (a)
(Germany), (1994).
Avalanche and Drift
layer contributions to
the negative
resistance of
millimeter wave
R. Mukherjee and J. P.
Banerjee
International
Journal of
electronics (UK)
Vol. 76, pp. 589-600 (1994).
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Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
p+nn
+InPImpatt diode
for different current
densities
Substrate thinning for
fabrication of Impatt
diodes
A. Ganguly, J. P.
Banerjee and S. K. Roy
Special Issue on
Microwave and
mm-wave sources
and applications,
journal of IETE
(India)
Vol.40, No.1, PP.53-54 (1994).
Computer modeling
of optically controlled
submicron Indium
Phosphide Impatt
Device
J. P. Banerjee and R.
Mukherjee
Special issue of the
Journal of
Mathematical
Modeling and
Scientific
Computing (USA)
pp. 1067-1068 (1993).
Experimental studies
on the process steps
for fabrication of
Impatt diode and
corresponding study
of the dc breakdown
voltage
J. P. Banerjee, M. Mitra,
A. Ganguly and S. K. Roy
Journal of IETE
(India)
Vol. 10, No.4 (1993)
Studies on the high
frequency properties
of <111>, <110> and
<100> oriented
GaAsImpatt diodes
”, J. P. Banerjee, R.
Mukherjee, S. P. Pati and
S. K. Roy
Appl. Phys. A
(Germany)
Vol. 56, pp. 375-380 (1993)
Computer simulation
of the small signal
admittance and
negative resistance of
Double Avalanche
Region Impatt diode
J. P. Banerjee and S. K.
Roy
Appl. Phys. A
(Germany)
Vol. 56, pp. 575-580 (1993).
Simulation of the
diffusion profile for
enhancement of
negative resistance
and efficiency of
Silicon Single Drift
Region Impatt Diodes
J. P. Banerjee, R.
Mukherjee, A. Ganguly,
M. Mitra and S. K. Roy
Phys. Stat. Sol. (a)
(Germany)
Vol. 132, pp. 217-223 (1992).
Properties of 35 GHz
InP DDR
J. P. Banerjee, S. P. Pati
and S. K. Roy
Proc. Of
International
Society for Optical
Engineering, SPIE
(USA)
Vol. 1523, pp. 69-73 (1991).
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
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Effect of carrier
diffusion on the
properties of GaAs
and InP avalanche
diodes
J. P. Banerjee, R.
Mukherjee, M. Mitra and
S. K. Roy
Proc. Of
International
Society for Optical
Engineering(SPIE),
(USA
Vol. 1523, pp. 172-174 (1991).
High frequency
numerical analysis of
DAR Impatt diode
S. P. Pati, J. P. Banerjee
and S.K. Roy
Semiconductor
Science and
Technology (UK)
Vol.6, pp. 777-783 (1991).
Design and
optimization of the
doping profile of
double drift Low-
High-Low Indium
Phosphide Diode
J. P. Banerjee and S. K.
Roy
Semiconductor
Science and
Technology (UK)
Vol. 6, pp. 663-669 (1991)
Computer simulation
of the small signal
admittance and
negative resistance of
Double Avalanche
Region Impatt Diode
J. P. Banerjee and S. K.
Roy
Numerical Analysis
of Semiconductor
Devices and
Integrated Circuits
(NASECODE
VII)”, Colorado
(USA)
Vol.7, pp. 215-216 (1991).
Comparison of
theoretical and
experimental 60 GHz
Silicon Impatt diode
performance
J. P. Banerjee, J.F. Luy
and F. Schaffler
Electronics Lett.
(UK)
Vol.27, No.12, pp. 1049-1051
(1991).
Properties of Gallium
Arsenide and Indium
Phosphide Impatts at
Microwave and
Millimeter-wave
Frequencies
J. P. Banerjee and S. K.
Roy
Bull. Mater. Science
(India)
Vol.13, pp. 113-119 (1990)
High power design
considerations of mm-
wave double Read
Impatt diodes
J. P. Banerjee, G. N. Das,
S. P. Pati and S. K. Roy
Journal of
Semiconductor
Material and
Devices (India)
Vol. 1, No.1, pp. 97-102 (1989)
Variation of High
frequency negative
resistance of silicon
n+pp
+ and
GaAsp+nn
+Impatt
diodes with
enhancement of
reverse saturation
current
N. Mazumder, J. P.
Banerjee and S. K. Roy
Phys. Stat. Sol. (a)
(Germany)
Vol. 116, pp. 415-424 (1989).
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
The distribution of
negative resistivity in
the active layer of
millimeter-wave
double drift regions
diodes
J. P. Banerjee, S. P. Pati
and S. K. Roy
J. P. Banerjee, S. P.
Pati and S. K. Roy
Vol. 22, pp. 959-964 (1989).
High frequency
characterization of
double drift region
InP and GaAs
IMPATT Diodes
J. P. Banerjee, S. P. Pati
and S. K. Roy
Appl. Phys. A.
(Germany)
Vol. 48, pp 437-443 (1989)
Computer simulation
experiment on mm-
wave properties of
InPIMPATTs
J. P. Banerjee, S. P. Pati
and S. K. Roy
Phys. Stat. Sol, (a),
Germany)
Vol.109, p. 359 (1988).
Effect of ionization
rates on the
breakdown conditions
of InP, GaAs and Si
avalanche diodes
S. P. Pati, J. P. Banerjee
and S. K. Roy
Current Trends in
Physics of
Materials, World
Scientific Co.,
Singapore
pp. 203-207 (1987)
A Computer study on
the high frequency
properties of silicon
mm-wave single drift
Impatt diode
S. P. Pati, J. P. Banerjee
and S. K. Roy
Journal of IETE
(India)
Vol.33, pp. 159-163 (1987)
A Computer analysis
of the distribution of
high frequency
negative resistance in
the depletion layer of
Impatt diodes
J. P. Banerjee, S. P. Pati
and S. K. Roy
Numerical Analysis
of Semiconductor
Devices and
Integrated Circuits
(NASECODE IV),
Dublin (Ireland)
p.494 (1985)
Effect of impurity
charge bumps on the
d.c. and microwave
properties of high
efficiency silicon
double drift Impatt
diodes
S.P.Pati, J. P. Banerjee
and S. K. Roy
Journal of IETE
(India)
Vol. 31, pp. 22-27 (1985)
Computer studies on
the space charge
dependence of
avalanche zone width
and conversion
efficiency of single
drift p+nn
+ and n
+pp
+
J. P. Banerjee, S. P. Pati
and S. K. Roy
Appl. Phys. A.
(Germany)
Vol. 35, pp. 125-128 (1984).
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved
Indium Phosphide
Impatts
A computer study of
the crystal orientation
dependence of
avalanche zone width
and efficiency of
single and double
drift GaAsImpatt
diode
S.P. Pati, J. P. Banerjee
and S. K. Roy
Indian J. Pure and
Appl. Phys
Vol. 21, pp. 558-62 (1983)
A Study of Indium
Phosphide single drift
and double drift
avalanche diode from
computer analysis of
field and current
profiles
J. P. Banerjee, S. P. Pati
and S. K. Roy
Indian J. Pure and
Appl. Phys
Vol. 21, pp. 661-64 (1983).
Computer analysis of
d.c. field and current
density profiles of
DAR Impatt diode
D.N.Dutta, S.P. Pati, J. P.
Banerjee, B.B. Pal and S.
K. Roy
“IEEE Trans.
Electron Devices
Vol. ED-29, pp. 1812-16 (1982)
LIST OF BOOKS
1. “Electric Circuits and Electron Devices” by J. P. Bandyopadhyay, VikasPublishing,
New Delhi (2011).
2. “Basic Electrical and Electronics Engineering” (Vol.II) by J. P. Bandyopadhyay,
Vikas Publishing, New Delhi (2011)
3. “Solid State Electronic Devices” by J. P. Bandyopadhyay, VikasPubllishing, New
Delhi (2010).
4. “Basic Electrical and Electronics Engineering” (Vol.I) by J. P. Bandyopadhyay, Vikas
Publishing, New Delhi (2010)
5. “ Basic Electronics Engineering” by J. P. Bandyopadhyay, Vikas Publishing, New
Delhi (2010)
Work Experience:
a. Academic: 45 years
Durgapur Knowledge Campus |Arrah | Shibtala | Via Muchipara |Durgapur 713 212 |
Mobile No. – 9933049448 | Phone: +91 343-2533813-14 | Fax: +91 0343-2534025| Email: [email protected]
Copyright © NSHM - Knowledge Campus 13-14. All rights reserved