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X-Ray Detector Activities yin Japan
Aug. 1st, 2012BES Neutron and Photon Detector W.S.
@GaithersburgYasuo Arai ([email protected])
High Energy Accelerator Research Organization, KEK
f P l d N l dInstitute of Particle and Nuclear Studies1
Neutron & Photon Facilities in Japan KEK & JAEA,Neutron & Photon Facilities in Japan
RIKEN, JASRI
J-PARC(30GeV Proton
Neutron)SPring-8 (8 Gev SR)SACLA (8 GeV XFEL)SPring-8II
Neutron)
SPring-8II
KEKSuper KEKB(e+ - e-)
PF(2.5 GeV SR)PF AR(6 5G V SR)
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PF-AR(6.5GeV SR)ERL
Although there are many activities on X-ray detector Although there are many activities on X ray detector developments in Japan, I do not cover all the work.
Todays Topics
•CdTe detector (JASRI SPring-8)
•MPCCD detector (Riken SACLA)
•SOI detector (KEK, Riken SACLA)
•STJ detector (AIST)
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Cd Te detectorDetection Efficiency
• CdTe is a promising semiconductor for high-energy X-ray region due to its high atomic number and density.
• Low leak current due to its wide band gap energy even at room temperature.
Most of the CdTe crystals used in the world are produced in Japanese company (Acrorad Co Ltd )
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Japanese company (Acrorad Co. Ltd.).(However, it entered Siemens group last year)
CdTe pixel detectorOhmic and Schottky configurations In/Au stud bonding
(developed with JAXA)(developed with JAXA)Three metal configurations were investigated by using high resistivity p-type CdTe wafers 500μm in thickness.
CdTe + SP8-02 ASIC (TSMC 0 25um)
μ
CdTe + SP8 02 ASIC (TSMC 0.25um)
200um, 20 x 50 pix([email protected])5
CdTe strip detector (Collab. with PSI)Pl t i t ll BL19B2 diff t tPlan to install BL19B2 diffractometer
1st stage: standard Si sensor MYTHENFinal: CdTe sensor with MYTHEN chip
Sample : CeOSample : CeO2X-ray energy : 30 keVExposure time : 60 sec
In/CdTe/Pton ceramic
In/CdTe/Pton glass Si
104
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Standard MYTHEN (Si)
104
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Standard MYTHEN (Si) CdTe
104
105
Standard MYTHEN (Si) CdTe CdTe x 0.05
CeO2 (111)
102
103
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102
103
102
103
10
101
10
740720700680660640
101
10
740720700680660640
101
10
740720700680660640
CdTe detector shows 20 times higher efficiency and comparable energy
l ti ith Si d t tresolution with Si detector.
CdTe Applications
Hitachi Gamma Camera Dental Panoramic Image16x16 CdTe16x16 CdTelaminatedPin Hole Camera
40x40CdTePin Hole Camera CdTePhoton Counting
(Fukushima NPP)
7http://www.telesystems.co.jp/dental/http://www.hitachi.co.jp/New/cnews/month/2011/11/1115.html
Multiport CCD (MPCCD) detector for X-ray Free-Electron Laser Facility, SACLAX ray Free Electron Laser Facility, SACLA
• High-Speed, 8-ports, Front Ill i ti CCD
Pixel Size 50 x 50 um2
P k Si l > 4 4 MIllumination CCD. • First Detector for SACLA.• Proven state of art technologies in
Peak Signal > 4.4 Me-(2700 ph.@6 keV)
Noise < 300 e-• Proven state-of-art technologies in collaboration with industry sensor : e2v, readout: Meisei Co).
Noise 300 e0.18 ph. @ 6keV
Pixel Number 1k x 512 pix/sensor, )Rad. Hardness > 1.6 x 1014 ph./mm2
@ 12 keV> 1 year annual doseMore than half present > 1 year annual dose
Sensitive Layer 50 um(300 um in Phase III)
More than half present proposals are using this detector
Dead Area at Edge
300 umdetector.
MPCCD MPCCD Octal-sensor
MPCCD Single sensor detectorOctal-sensor
detector
XFELXFEL
Focal pointCoherent X-ray
Diffraction ImagingFocal point Diffraction Imaging
Octal Module （110mm x 110mm, 2048 2048 i )2048 x 2048 pix)
Working successfully!
Although the MPCCD is working successfully as a first detector for SACLA, this does not yet reach for final target spec.
SOI Pi l R&D i l i SOI Pixel R&D is also going.
SOIR&DR&D
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SOI Pixel Detector (SOIPIX)
Monolithic Detector having fine resolution of silicon
( )
and data processing power of CMOS LSI by using Silicon-On-Insulator (SOI) Technology.
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Feature of SOI Pixel Detector
• No mechanical bonding. Fabricated with semiconductor • No mechanical bonding. Fabricated with semiconductor process only, so high reliability, low cost are expected.process only, so high reliability, low cost are expected.
Fully depleted thick sensing region with Low sense Fully depleted thick sensing region with Low sense • Fully depleted thick sensing region with Low sense node capacitance.
• Fully depleted thick sensing region with Low sense node capacitance.
• On Pixel processing with CMOS transistors.• On Pixel processing with CMOS transistors.
• Can be operated in wide temperature (4K-570K) range, and has low single event cross section.
• Can be operated in wide temperature (4K-570K) range, and has low single event cross section.gg
• Based on Industry Standard • Based on Industry Standard Technology.Technology.
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SOIPIX Collaboration: 0.2 m Fully-Depleted SOI Pixel Process of Lapis SemiconductorRegular Multi-Project Wafer
(MPW) run. (~twice/year)
Process of Lapis Semiconductor Co. Inc.
JAXA AISTRIKEN
Tohoku U.Osaka U.U. of Hawaii
Fermi Nat'l Accl. Lab.
L B k l N t'l L b
KEK
Kyoto U.Tsukuba U.Lawrence Berkeley Nat'l Lab.
MPI INP KrakowMPI
U Heidelberg IHEP China
INP Krakow
SOIPIX MPW Mask
U. Heidelberg
Louvain-la-Neuve Univ.
IHEP China
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Integration Type Pixel (INTPIX5)
Pixel Size : 12x12 m2
896x1408 (~1.3 M）pixels、896x1408 ( 1.3 M）pixels、11 Analog out port、Column CDS.
12 2 12.2 mm
18.4 mm
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Dried Sardien (3 images are combined）Measurement with SOIPIX
5mm5mm
X-ray Energu Spectrum@-50℃Compton Electrons Tracks
noise 18e rmsnoise 18e- rms
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High Resistive FZ(p and n) SOI Wafer
Not only CZ-SOI wafer, we succeeded to process 8-inch FZ-SOI wafer.
Before Oxidation Conventional SOI Process
Improved SOI ProcessProcess Process
lWe optimized the process parameters, and succeeded to
Slips
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p p p ,perform the process without creating many slips.
Wafer type and Leakage Current
INTPIX3INTPIX3e
Isuues in SOI PixelSensor and Electronics are located very near. This cause ..
W d dditi l b k l t th ff t18
We need additional back-plane to suppress these effects.
Buried p-Well (BPW)BPW Implantation
SOI SiBuried
Substrate Implantation
SOI SiBuriedOxide(BOX)
P+
Pixel Peripheral
BPWP+
• Cut Top Si and BOX • Keep Top Si not affected
S th B k G t Eff t
• High Dose • Low Dose
• Suppress the Back Gate Effect.• Shrink pixel size without loosing sensitive area.• Increase break down voltage with low dose region.• Less electric field in the BOX which improve radiationLess electric field in the BOX which improve radiation
hardness.19
Double SOI Wafer
additional circuit
conduction layersensor
• Shield transistors from bottom electric field
• Compensate electric field• Compensate electric field generated by the trapped hole in the BOX.
• Reduce crosstalk between sensors and circuits.
First Chips will be delivered this week20
First Chips will be delivered this week.
Silicon-On-Insulator PHoton Imaging A S (SOPHIAS)Array Sensor (SOPHIAS)
M lti i tGain Csens [fF] Via # Gain [uV/e]
Multi-via concept High 16 24 7.2
Low 240 4 0.15 x48Utilize lateral diffusion of electron-hole cloud.
Large Dynamic RangeLarge Dynamic Range
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Specification of SOPHIAS and MPCCDSpecification of SOPHIAS and MPCCD
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SOPHIAS Detector• XFEL Application has driven and is driving critical• XFEL Application has driven and is driving critical
technologies– Back-side process– MIM cap onto 3M layer– Introduction of optimized Pcells– Stitching lithography
achievedStitching lithography
– Depletion of 500 um by SOI-FZ wafer– Radiation hard transistor Under progressp g
26.7
mm Raw Data
25 msec Exposure64 mm
2
25 msec ExposureAg 20 kV 0.2 mA
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Superconducting Tunnel Junction (STJ) Superconducting Tunnel Junction (STJ)
Si Nb Al HfSi Nb Al Hf
Tc[K] 9.23 1.20 0.165
2Δ[meV] 1100 1.550 0.172 0.020
Hc[G] 1980 105 13
Tc : Phase Transition Temp : Band Gap EnergyHc : critical magnetic field
Band Gap Energy < 1/1000 Si,so extremely good energy resolution!R&Ds are going at several institutions
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(KEK, AIST, RIKEN, NAOJ, Tsukuba U., Okayama U. ...)
Soft X-ray spectrometer using 100-pixelSTJ arraySTJ array
• Motivationt f l l t t i li ht l t d t– measurement of local structure in light element dopants
– fluorescent yield X-ray absorption spectroscopy (XAS) in soft X-ray regiony g
– high sensitivity (1mm2), high resolution (10-20 eV @ < 1keV), fast response (1M cps)
100 i l STJ i d l d• 100-pixel STJ array is developed.
Si l STJ i l 100 BNSingle STJ pixel, 100mm BN600eV
500mmUkibe et. al, Jpn. J. Appl. Phys. 500mm
Microphotograph of STJ
p pp y51 (2012) 010115
Microphotograph of STJ detector fabricated in AIST. XRF spectrum of BN at 600eV taken
by an STJ detector. ([email protected])25
Soft X-ray XAS instrument using STJ array
• STJ-XASSR source BL 11A (bending) BL 16A (undulator) in KEK PF– SR source, BL-11A (bending), BL-16A (undulator) in KEK-PF
– Vacuum sample chamber, quick sample preparation using load lock
– Automated 3He cryostat, base temperature of 300mK– 100-pixel STJ array, 91 channels available
Robust readout room temp preamplifiers FADC FPGA MCAs– Robust readout, room temp. preamplifiers, FADC-FPGA MCAs
sample
detector X-ray100
preamplifiers
cryostat
load lock 100 MCAs
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Application of STJ-XAS• SiC measurement
– power electronics device– nitrogen dope → n-type semiconductor– problem : overwrap of C-K during N-K edge measurement
XRF spectrum of SiC:N (300ppm)
CNO liCNO lines are clearly separated.
STJ-XAS is useful to study nitrogen dopant in SiC.
Summary• X-ray Imaging is one of very active field.
• Although number of researchers working on detector developments is not so large in Japan, collaboration with industry enables us to do state-of-art detector developmentsstate-of-art detector developments.
• There are several development activities of CdTe detectors in academic and industry sectors in Japan We are in a bit good positionacademic and industry sectors in Japan. We are in a bit good position since the crystals are produced in Japan.
• First detector (MPCCD) for SACLA is developed succcessfully in• First detector (MPCCD) for SACLA is developed succcessfully in collaboration of RIKEN and e2v. However, R&D for larger dynamic range detector (SOPHIAS) using SOI technology is also going.
• Developments of SOI pixel detector was initially started at KEK in 2005. Now many collaborators are participating the SOIPIX process at MPW run.
• STJ and other superconducting devices (MKID) are actively developed
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in several Japanese institutions.
