Upload
others
View
36
Download
0
Embed Size (px)
Citation preview
SMD Type
www.kexin.com.cn 1
Transistors
PNP TransistorsFZT953 (KZT953)
■ Features ● Collector Current Capability IC=-5A
● Collector Emitter Voltage VCEO=-100V
● Complementary to FZT853
1.80
(max
)
0.02
~ 0
.1
0.70±0.1
4.60 (typ)
10 。
7.0±
0.3
3.50
±0.2
6.50±0.2
3.00±0.1
2.30 (typ)
SOT-223 Unit:mm
1.Base 2.Collector3.Emitter
4.Collector
4
1 2 3
0.250
Gauge Plane
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector - Base Voltage VCBO -140
Collector - Emitter Voltage VCEO -100
Emitter - Base Voltage VEBO -6
Collector Current - Continuous IC -5
Collector Current - Pulse ICP -10
Collector Power Dissipation PC 3 W
Junction Temperature TJ 150
Storage Temperature range Tstg -55 to 150
V
℃
A
SMD Type
www.kexin.com.cn2
Transistors
PNP TransistorsFZT953 (KZT953)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -140
VCER Ic= -1uA,RB≤1KΩ -140
VCEO Ic= -10 mA, IB=0 -100
Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -6
VCB= -100 V , IE=0 -50 nA
VCB= -100 V , IE=0 ,Ta = 100℃ -1 uA
VCB= -100 V , IE=0 -50 nA
VCB= -100 V , IE=0 ,Ta = 100℃ -1 uA
Emitter cut-off current IEBO VEB= -6V , IC=0 -10 nA
IC=-100mA, IB=-10mA (Note.1) -50
IC=-1 A, IB=-100mA (Note.1) -115
IC=-2 A, IB= -200mA (Note.1) -220
IC=-4 A, IB=-400mA (Note.1) -420
Base - emitter saturation voltage VBE(sat) IC=-4 A, IB=-400mA (Note.1) -1.17
Base-Emitter Turn-On Voltage VBE(on) VCE= -1V, IC= -4A (Note.1) -1.16
hFE(1) VCE= -1V, IC= -10mA 100
hFE(2) VCE= -1V, IC= -1A 100 300
hFE(3) VCE= -1V, IC= -3 A 50
hFE(4) VCE= -1V, IC= -4 A 30
hFE(5) VCE= -1V, IC= -10 A 15
ton 110
toff 460
Collector output capacitance Cob VCB= -10V, f=1MHz (Note.1) 65 pF
Transition frequency fT VCE= -10V, IC= -100mA,f=50MHz 125 MHz
Switching Times IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V ns
ICER Collector-emitter cut-off current (R≤1KΩ)
Collector-emitter saturation voltage VCE(sat)
DC current gain (Note.1)
V
Collector-base cut-off current ICBO
Collector- emitter breakdown voltage
mV
V
Note.1: Pulse width=300 us. Duty cycle ≤ 2%
SMD Type
www.kexin.com.cn 3
Transistors
PNP TransistorsFZT953 (KZT953)
■ Typical Characterisitics
-55°C +25°C +100°C +175°C
+100°C +25°C -55°C
021.010.0 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
021.010.0 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
021.010.0 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
021.010.0 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
021.010.0 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
VCE(sat) v IC
IC - Collector Current (Amps)
VCE(sat) -
(Vol
ts)
Tamb=25°C
VCE(sat) v IC
IC - Collector Current (Amps) V
CE(sat) -
(Vol
ts)
-55°C +25°C +175°C
-55°C +25°C +100°C +175°C
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
hFE -
Nor
mal
ised
Gai
n
VBE(sat) -
(Vol
ts)
VBE -
(Vol
ts)
IC -
Col
lect
or C
urre
nt (A
mps
)
IC/IB=10IC/IB=10
IC/IB=50
IC/IB=10VCE=1V
VCE=1V
300
200
100
h FE
- Typ
ical
Gai
n
VCE - Collector Voltage (Volts)
Safe Operating Area
0011.0 1 100.01
0.1
1
10Single Pulse Test at Tamb=25°C
D.C. 1s 100ms 10ms
1.0ms 0.1ms
0.001 0.001
0.001
0.001