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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES High Collector Current Complementary to SS8050
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1.5 A
PC Collector Power Dissipation 200 mW
RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA
Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA
hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain
hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V
Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz 100 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1)
RANK L H J
RANGE 120–200 200–350 300–400
MARKING Y2
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
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-1 -10 -100 -1000-1
-10
-100
-1000
-1 -10 -100 -1000-100
-1000
-0.0 -0.5 -1.0 -1.5 -2.0-0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-0.35
-0.40
-200 -400 -600 -800 -1000 -1200-1
-10
-100
-1000
-1 -10 -100 -100010
100
1000
-0.1 -1 -101
10
100
-1 -10 -10010
100
1000
0 25 50 75 100 125 1500
50
100
150
200
250
-1500
Ta=100℃
Ta=25℃
β=10
IC
VCEsat
——
CO
LLE
CTO
R-E
MIT
TER
SA
TUR
ATI
ON
VOLT
AGE
V C
Esa
t (m
V)
COLLECTOR CURRENT IC (mA)
-300
IC
VBEsat
——
Ta=25℃
Ta=100℃
BASE
-EM
ITTE
R S
ATU
RAT
ION
VOLT
AGE
V B
Esa
t (m
V)
-1500
β=10
COLLECTOR CURRENT IC (mA)
-2000
COMMONEMITTERTa=25℃
CO
LLE
CTO
R C
UR
RE
NT
I C
(A
)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Static Characteristic
-2mA-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1mA
-800uA
-600uA
-400uA
IB=-200uA
IC
VBE
——
Ta=100℃
Ta=25℃
VCE=-1V
CO
LLC
ETO
R C
UR
RE
NT
I C
(m
A)
BASE-EMMITER VOLTAGE VBE (mV)
-1500
DC
CU
RR
EN
T G
AIN
h
FE
COLLECTOR CURRENT IC (mA)
Ta=100℃
Ta=25℃
VCE=-1V
IC
hFE
——
-1500
Cob
Cib
VCB
/ VEB
Cob
/ Cib ——
REVERSE VOLTAGE V (V)
CAP
ACIT
ANC
E
C
(pF)
f=1MHzIE=0/IC=0Ta=25℃
-20
IC
fT ——
VCE=-10VTa=25℃
TRA
NS
ITIO
N F
RE
QU
EN
CY
fT
(M
Hz)
COLLECTOR CURRENT IC (mA)
CO
LLEC
TOR
PO
WER
DIS
SIPA
TIO
N
P
C
(mW
)
AMBIENT TEMPERATURE Ta ( )℃
PC —— T
a
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Typical Characteristics
Min Max Min MaxA 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004A2 0.900 1.000 0.035 0.039b 0.200 0.400 0.008 0.016c 0.080 0.150 0.003 0.006D 2.000 2.200 0.079 0.087E 1.150 1.350 0.045 0.053
E1 2.150 2.450 0.085 0.096e
e1 1.200 1.400 0.047 0.055L
L1 0.260 0.460 0.010 0.018θ 0° 8° 0° 8°
0.525 REF 0.021 REF
SymbolDimensions In Millimeters Dimensions In Inches
0.650 TYP 0.026 TYP
SOT-323 Package Outline Dimensions
SOT-323 Suggested Pad Layout
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SOT-323 Tape and Reel
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