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SCT3030AL N-channel SiC power MOSFET
Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge*3
-4 to +26 V
Recommended Drive Voltage VGS_op*4 0 / +18 V
650V
70A
VDSS
ID
PD
RDS(on) (Typ.) 30mW
lOutline
lInner circuit
lPackaging specifications
TO-247N
Tube
-
Type
Packing
Reel size (mm)
C11
SCT3030AL
Basic ordering unit (pcs)
Tape width (mm) -
30
Marking
Taping code
lFeatures
262W
lApplication
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Gate - Source voltage (DC) VGSS -4 to +22 V
lAbsolute maximum ratings (Ta = 25°C)
Symbol Value Unit
Drain - Source voltage
Continuous drain currentTc = 25°C
Tc = 100°C
Pulsed drain current
Parameter
ID,pulse *2 175
Junction temperature Tj 175 °C
Range of storage temperature Tstg -55 to +175 °C
A
VDSS 650 V
ID *1 70 A
ID *1 49 A
• Induction heating
• Motor drives
• Solar inverters
• DC/DC converters
• Switch mode power supplies
(1) Gate(2) Drain(3) Source
*1 Body Diode
(1) (2) (3)
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001 1/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lThermal resistance
Parameter SymbolValues
UnitMin. Typ. Max.
UnitMin. Typ. Max.
Thermal resistance, junction - case RthJC - 0.44 0.57 °C/W
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
Drain - Source breakdown
voltageV(BR)DSS VGS = 0V, ID = 1mA 650 - - V
Zero gate voltage
drain currentIDSS
VDS = 650V, VGS = 0V
mATj = 25°C - 1 10
Tj = 150°C - 2
Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA
-
5.6 V
Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA
Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA 2.7 -
Static drain - source
on - state resistanceRDS(on)
*5
VGS = 18V, ID = 27A
mWTj = 25°C - 30 39
Tj = 125°C - 39.6 -
- WGate input resistance RG f = 1MHz, open drain - 7
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 2/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
S
Input capacitance Ciss
pFOutput capacitance Coss
Transconductance gfs *5
Reverse transfer capacitance -Crss f = 1MHz - 42
-
VGS = 0V - 1526 -
VDS = 500V - 89 -
VDS = 10V, ID = 27A
pF
Turn - on delay time td(on) *5 VDD = 300V, ID = 18A - 22 -
nsRise time tr
*5
Effective output capacitance,
energy relatedCo(er)
VGS = 0V
VDS = 0V to 300V- 230 -
Fall time tf *5 RG = 0W - 27 -
VGS = 18V/0V -
UnitMin. Typ. Max.
41 -
Turn - off delay time td(off) *5 RL = 17W - 48 -
mJ
Turn - off switching loss Eoff *5 - 112 -
Turn - on switching loss Eon *5 VDD = 300V, ID=27A
VGS = 18V/0V
RG = 0W L=250mH
*Eon includes diode
reverse recovery
- 168 -
Qg *5 VDD = 300V - 104 -
lGate Charge characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
- 9.4
V
- 42 -
Gate plateau voltage V(plateau) VDD = 300V, ID = 27A - 9.6 -
nCGate - Source charge Qgs *5 ID = 27A - 25 -
Gate - Drain charge Qgd *5 VGS = 18V
Total gate charge
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 3/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause
thermal runaway.
*5 Pulsed
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
A
Inverse diode direct current,
pulsedISM
*2 - - 175 A
Inverse diode continuous,
forward currentIS
*1
Tc = 25°C
- - 70
V
Reverse recovery time trr *5
IF = 27A, VR = 600V
di/dt = 1100A/ms
- 26 - ns
Reverse recovery charge Qrr *5
Forward voltage VSD *5 VGS = 0V, IS = 27A - 3.2 -
- 130 - nC
Peak reverse recovery current Irrm *5 - 10 - A
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 4/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0
50
100
150
200
250
300
0 50 100 150 200
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Ta = 25ºCSingle Pulse
0.1
1
10
100
1000
0.1 1 10 100 1000
Operation in this area is limited by RDS(on)
PW = 100ms
PW = 1ms
PW = 10ms
PW = 100ms
Ta = 25ºCSingle Pulse
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Po
we
r D
issip
atio
n
: P
D[W
]
Dra
in C
urr
ent
: I D
[A]
Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal Resistance vs. Pulse Width
Tra
nsie
nt
Therm
al R
esis
tance :
Rth
[K/W
]
Pulse Width : PW [s]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 5/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0
10
20
30
40
50
60
70
0 2 4 6 8 10
Ta = 150ºCPulsed
10V
VGS= 8V
18V
16V
20V
14V
12V
0
5
10
15
20
25
30
35
0 1 2 3 4 5
Ta = 150ºCPulsed
10V
VGS= 8V
16V
14V
20V
18V
12V
0
10
20
30
40
50
60
70
0 2 4 6 8 10
Ta = 25ºCPulsed
10V
VGS= 8V
16V
18V
14V
20V
12V
0
5
10
15
20
25
30
35
0 1 2 3 4 5
Ta = 25ºCPulsed
VGS= 8V
10V
14V
16V
18V
20V
12V
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
Fig.6 Tj = 150°C Typical Output
Characteristics(I)Fig.7 Tj = 150°C Typical Output
Characteristics(II)
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Dra
in C
urr
ent
: I D
[A]
Dra
in C
urr
ent
: I D
[A]
Dra
in C
urr
ent
: I D
[A]
Drain - Source Voltage : VDS [V]
Dra
in C
urr
ent
: I D
[A]
Drain - Source Voltage : VDS [V]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 6/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0.1
1
10
0.1 1 10
VDS = 10VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºC
Ta = -25ºC
0
1
2
3
4
5
6
-50 0 50 100 150 200
VDS = 10VID = 13.3mA
0.01
0.1
1
10
100
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºC
Ta= -25ºC
VDS = 10VPulsed
0
10
20
30
40
50
60
70
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºC
Ta= -25ºC
VDS = 10VPulsed
Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)
Dra
in C
urr
ent
: I D
[A]
Dra
in C
urr
ent
: I D
[A]
Fig.10 Gate Threshold Voltagevs. Junction Temperature
Gate
Thre
shold
Voltage :
VG
S(t
h)[V
]
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
Tra
nsconducta
nce :
gfs
[S]
Drain Current : ID [A]
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 7/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0
0.02
0.04
0.06
0.08
0.1
0.12
6 8 10 12 14 16 18 20 22
ID = 27A
ID = 47A
Ta = 25ºCPulsed
0
0.02
0.04
0.06
0.08
0.1
0.12
-50 0 50 100 150 200
VGS = 18V
Pulsed
ID = 47A
ID = 27A
0.01
0.1
1 10 100
VGS = 18VPulsed
Ta = 150ºCTa = 125ºCTa = 75ºCTa = 25ºC
Ta = -25ºC
Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Resis
tance
: R
DS
(on
)[W
]
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature
Sta
tic D
rain
-S
ou
rce
On-S
tate
Re
sis
tance
: R
DS
(on)[W
]
Junction Temperature : T j [ºC]
Fig.14 Static Drain - Source On - StateResistance vs. Drain Current
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Resis
tance
: R
DS
(on)[W
]
Drain Current : ID [A]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 8/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0
5
10
15
20
0 100 200 300 400
Ta = 25ºC
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºCf = 1MHzVGS = 0V
0
5
10
15
20
0 10 20 30 40 50 60 70 80 90 100110
Ta = 25ºCVDD = 300VID = 27APulsed
1
10
100
1000
10000
0.1 1 10 100
td(on)
td(off)
Ta = 25ºCVDD = 300VVGS = 18V
RG = 0WPulsed
tf
tr
Fig.15 Typical Capacitancevs. Drain - Source Voltage
Ca
pa
cita
nce
: C
[p
F]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Sw
itchin
g T
ime : t
[ns]
Drain Current : ID [A]
Fig.18 Dynamic Input Characteristics
Total Gate Charge : Qg [nC]
Gate
-S
ourc
e V
oltage :
VG
S[V
]C
oss S
tore
d E
nerg
y :
EO
SS
[mJ]
Fig.16 Coss Stored Energy
Drain - Source Voltage : VDS [V]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 9/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0
200
400
600
800
1000
1200
0 10 20 30 40 50 60 70 80
Ta = 25ºCVDD=300VVGS = 18V/0V
RG=0W
L=250mH
Eon
Eoff
0
50
100
150
200
250
300
350
400
100 200 300 400 500
Ta = 25ºCID=27AVGS = 18V/0V
RG=0W
L=250mHEon
Eoff
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Ta = 25ºCVDD=300VID=27AVGS = 18V/0V
L=250mH
Eon
Eoff
Fig.19 Typical Switching Lossvs. Drain - Source Voltage
Sw
itchin
g E
nerg
y :
E [m
J]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
Sw
itchin
g E
nerg
y :
E [mJ]
External Gate Resistance : RG [W]
Sw
itchin
g E
nerg
y :
E [mJ]
Fig.20 Typical Switching Loss
vs. Drain Current
Drain Current : ID [A]
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TSZ22111・15・001 10/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lElectrical characteristic curves
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8
VGS = 0VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºC
Ta = -25ºC
10
100
1000
1 10 100
Ta = 25ºCdi / dt = 1100A / usVR = 300VVGS = 0VPulsed
Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage
Inve
rse
Dio
de
F
orw
ard
Cu
rre
nt
: I S
[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current
Re
vers
e R
ecovery
Tim
e : t
rr[n
s]
Inverse Diode Forward Current : IS [A]
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TSZ22111・15・001 11/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
SCT3030AL
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
VsurgeIrr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
Same type device as
D.U.T.
D.U.T.
ID
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TSZ22111・15・001 12/12
TSQ50211-SCT3030AL
14.Jun.2018 - Rev.005
Datasheet
R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.
Notice
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N o t e s
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative and verify the latest specifica-tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
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