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SCT2080KE N-channel SiC power MOSFET
lOutlineVDSS 1200V TO-247
TO-247N
RDS(on) (Typ.) 80mΩID 40A
lFeatures lInner circuit1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliantlPackaging specifications*1
Package TO-247 TO-247N
lApplication
Type
Packing Tube
・Solar inverters Reel size (mm) -
・DC/DC converters Tape width (mm) -
・Induction heating Basic ordering unit (pcs) 30
・Motor drives Packing code C C11
Marking SCT2080KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 1200 V
Continuous drain currentTc = 25°C ID
*2 40 A
Tc = 100°C ID *2 28 A
Pulsed drain current ID,pulse *3 80 A
Gate - Source voltage (DC) VGSS -6 to +22 V
Gate - Source surge voltage (tsurge ˂ 300nsec) VGSS_surge*4
-10 to +26 V
Total power dissipation TC=25°C, See Fig.1
PD262 W
TC=100°C, See Fig.1 130 W
Junction temperature Tj 175 °C
Range of storage temperature Tstg -55 to +175 °C
(1) Gate(2) Drain(3) Source
* Body Diode
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
UnitMin. Typ. Max.
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
V
Zero gate voltagedrain current
IDSS
VDS = 1200V, VGS = 0V
μATj = 25°C -
Drain - Source breakdownvoltage
V(BR)DSS VGS = 0V, ID = 1mA 1200 - -
1 10
Tj = 150°C - 2 -
Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA
nA
Gate threshold voltage VGS (th) VDS = VGS, ID = 4.4mA 1.6 2.8 4.0 V
Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100
°C/W
lThermal resistance
Parameter SymbolValues
UnitMin. Typ. Max.
Thermal resistance, junction - case RthJC - 0.44 0.57
lTypical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unit
Ws/KRth2 1.97E-01 Cth2 1.80E-02
Rth3 1.62E-01 Cth3 2.49E-01
Rth1 7.80E-02
K/W
Cth1 5.00E-03
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
UnitMin. Typ. Max.
Static drain - sourceon - state resistance RDS(on)
*5
VGS = 18V, ID = 10A
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
mΩTj = 25°C - 80 117
Tj = 125°C - 125 -
Ω
Transconductance gfs *5 VDS = 10V, ID = 10A - 3.7 - S
Gate input resistance RG f = 1MHz, open drain - 6.3 -
pFOutput capacitance Coss VDS = 800V - 77 -
Reverse transfer capacitance Crss f = 1MHz
Input capacitance Ciss VGS = 0V - 2080 -
- 16 -
Effective output capacitance,energy related
Co(er)VGS = 0VVDS = 0V to 500V - 116 - pF
Turn - on delay time td(on) *5 VDD = 400V, VGS = 18V - 35 -
nsRise time tr
*5
Fall time tf *5 RG = 0Ω - 22 -
ID = 10A - 36 -
Turn - off delay time td(off) *5 RL = 40Ω - 76 -
μJ
Turn - off switching loss Eoff *5 - 51 -
Turn - on switching loss Eon *5 VDD = 600V, ID=10A
VGS = 18V/0VRG = 0Ω, L=500μH*Eon includes diode reverse recovery
- 174 -
- 106 -
lGate Charge characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
V
- 31 -
Gate plateau voltage V(plateau) VDD = 400V, ID = 10A - 9.7 -
nCGate - Source charge Qgs *5 ID = 10A - 27 -
Gate - Drain charge Qgd *5 VGS = 18V
Total gate charge Qg *5 VDD = 400V
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
*2 Limited only by maximum temperature allowed.
*3 PW 10μs, Duty cycle 1%
*4 Example of acceptable VGS waveform
*5 Pulsed
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
A
Body diode direct current,pulsed ISM *3 - - 80 A
Body diode continuous,forward current IS *2
Tc = 25°C
- - 40
V
Reverse recovery time trr *5
IF = 10A, VR = 400Vdi/dt = 150A/μs
- 31 - ns
Reverse recovery charge Qrr *5
Forward voltage VSD *5 VGS = 0V, IS = 10A - 4.6 -
*1 Tolerances of dimensions and packing specifications slightly differ between TO-247 and TO-247N, which is unlikely to influence compatibility for mounting. Please refer to corresponding specifications of dimensions for more details.
- 44 - nC
Peak reverse recovery current Irrm *5 - 2.3 - A
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0.1
1
10
100
0.1 1 10 100 1000 10000
Ta = 25ºCSingle Pulse
Operation in thisarea is limitedby RDS(ON)
PW = 10ms
PW = 100us
PW = 1ms
PW = 100ms
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Ta = 25ºCSingle
0
50
100
150
200
250
300
25 75 125 175
Fig.1 Power Dissipation Derating Curve
Pow
er D
issi
patio
n :
P D[W
]
Junction Temperature : Tj [ºC]
Fig.2 Maximum Safe Operating Area
Dra
in C
urre
nt :
I D[A
]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal Resistance vs. Pulse Width
Tran
sien
t The
rmal
Res
ista
nce
: Rth
[K/W
]
Pulse Width : PW [s]
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0
2
4
6
8
10
12
14
16
18
20
0 1 2 3 4 5
Ta = 150ºCPulsed
VGS= 10V
VGS= 18VVGS= 16V
VGS= 14V
VGS= 12V
VGS= 20V
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
Ta = 150ºCPulsed
VGS= 14V
VGS = 10V
VGS= 18V
VGS= 16V VGS= 12V
VGS= 20V
0
2
4
6
8
10
12
14
16
18
20
0 1 2 3 4 5
Ta = 25ºCPulsed
VGS= 10V
VGS= 12V
VGS= 14V
VGS= 16VVGS= 18V
VGS= 20V
Fig.4 Typical Output Characteristics(I)
Dra
in C
urre
nt :
I D[A
]
Drain - Source Voltage : VDS [V]
Fig.5 Typical Output Characteristics(II)
Dra
in C
urre
nt :
I D[A
]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(I)
Dra
in C
urre
nt :
I D[A
]
Drain - Source Voltage : VDS [V]
Fig.7 Typical Output Characteristics(II)
Dra
in C
urre
nt :
I D[A
]
Drain - Source Voltage : VDS [V]
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
Ta = 25ºCPulsed
VGS= 12V
VGS= 10V
VGS= 14V
VGS= 16VVGS= 20V
VGS= 18V
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0.01
0.1
1
10
0.01 0.1 1 10 100
VDS = 10VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºCTa = -25ºC
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºCTa= -25ºC
VDS = 10VPulsed
Fig.8 Typical Transfer Characteristics
Dra
in C
urre
nt :
I D[A
]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltagevs. Junction Temperature
Gat
e Th
resh
old
Volta
ge :
V G
S(th
)[V
]
Junction Temperature : Tj [ºC]
Fig.11 Transconductance vs. Drain Current
Tran
scon
duct
ance
: g f
s[S
]
Drain Current : ID [A]
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50 0 50 100 150
VDS = 10VID = 10mA
0.01
0.1
1
10
100
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºCTa= -25ºC
VDS = 10VPulsed
Fig.9 Typical Transfer Characteristics (II)
Dra
in C
urre
nt :
I D[A
]
Gate - Source Voltage : VGS [V]
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0.01
0.1
1
0.1 1 10 100
VGS = 18VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºCTa = -25ºC
Fig.12 Static Drain - Source On - StateResistance vs. Gate - Source Voltage
Stat
ic D
rain
-So
urce
On-
Stat
e R
esis
tanc
e : R
DS(
on)[Ω
]
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature
Stat
ic D
rain
-So
urce
On-
Stat
e R
esis
tanc
e : R
DS(
on)[Ω
]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - StateResistance vs. Drain Current
Stat
ic D
rain
-So
urce
On-
Stat
e R
esis
tanc
e : R
DS(
on)[Ω
]
Drain Current : ID [A]
0
0.2
0.4
0.6
0.8
6 8 10 12 14 16 18 20 22
ID = 10A
ID = 20A
Ta = 25ºC
0
0.05
0.1
0.15
-50 0 50 100 150
VGS = 18VPulsed
ID = 10A
ID = 20A
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0
10
20
30
40
0 200 400 600 800
Ta = 25ºC
Fig.15 Typical Capacitancevs. Drain - Source Voltage
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºCf = 1MHzVGS = 0V
Cap
acita
nce
: C [p
F]
Drain - Source Voltage : VDS [V]
Fig.16 Coss Stored Energy
Cos
sSt
ored
Ene
rgy
: EO
SS[u
J]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Switc
hing
Tim
e : t
[ns]
Drain Current : ID [A]
Fig.18 Dynamic Input Characteristics
Gat
e -S
ourc
e Vo
ltage
: V G
S[V
]
Total Gate Charge : Qg [nC]
0
5
10
15
20
0 20 40 60 80 100 120
Ta = 25ºCVDD = 400VID = 10APulsed
1
10
100
1000
10000
0.01 0.1 1 10 100
tf
td(on)
td(off)
Ta = 25ºCVDD = 400VVGS = 18VRG = 0ΩPulsed
tr
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0100200300400500600700800900
100011001200
0 5 10 15 20 25 30 35
Ta = 25ºCVDD=600VVGS = 18V/0VRG=0ΩL=500μH Eon
Eoff
0
50
100
150
200
250
300
0 200 400 600 800 1000
Ta = 25ºCID=10AVGS = 18V/0VRG=0ΩL=500μH
Eon
Eoff
0
50
100
150
200
250
300
350
400
450
500
0 5 10 15 20 25 30
Ta = 25ºCVDD=600VID=10AVGS = 18V/0VL=500μH
Eon
Eoff
Fig.19 Typical Switching Lossvs. Drain - Source Voltage
Switc
hing
Ene
rgy
: E [μ
J]
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Lossvs. Drain Current
Switc
hing
Ene
rgy
: E [μ
J]
Drain - Current : ID [A]
Fig.21 Typical Switching Lossvs. External Gate Resistance
Switc
hing
Ene
rgy
: E [μ
J]
External Gate Resistance : RG [Ω]
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lElectrical characteristic curves
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8
VGS = 0VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºCTa = -25ºC
Fig.22 Body Diode Forward Currentvs. Source - Drain Voltage
Body
Dio
de F
orw
ard
Cur
rent
: I S
[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Timevs.Body Diode Forward Current
Rev
erse
Rec
over
y Ti
me
: trr
[ns]
Body Diode Forward Current : IS [A]
10
100
1000
1 10 100
Ta = 25ºCdi / dt = 150A / μsVR = 400VVGS = 0VPulsed
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
SCT2080KE
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
VsurgeIrr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
Same type device as D.U.T.
D.U.T.
ID
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TSQ50210-SCT2080KE28.Mar.2019 - rev.004
Datasheet
R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.
Notice
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N o t e s
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative and verify the latest specifica-tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
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For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.
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ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
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