SiC User Forum Use of SiC Components in Power Electronic ... · SiC Power Switching Devices Performance Envelope 15/56 03/2006 SiC Power Semiconductor Devices SiC Schottky Diodes

03/2006

SiC User Forum

Use of SiC Components inPower Electronic Systems

Johann W. KolarETH Zurich

Power Electronic Systems LaboratoryETH Zentrum, ETL H22

Physikstrasse 3CH-8092 Zurich

[email protected]

03/2006

Outline

SiC – Si Material Properties Reported SiC Device Performance Selected Application Areas SiC Systems Research at ETHZ Technology Gaps Outlook

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SiC User Forum

Use of SiC Components inPower Electronic Systems

Johann W. KolarETH Zurich

Power Electronic Systems LaboratoryETH Zentrum, ETL H22

Physikstrasse 3CH-8092 Zurich

[email protected]

03/2006

Outline

SiC – Si Material Properties Reported SiC Device Performance Selected Application Areas SiC Systems Research at ETHZ Technology Gaps Outlook

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03/2006

SiC Wafer Defects –Micropipes and Screw Dislocation Causing Low Processing Yield<5/cm2 Ultra-Low MP Density

<3/cm2 Required for 1200V/100A Devices

2002 SiC Wafer Production Capacity94% US Share

SiC Power SemiconductorDevices

Challenges

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Biggest Device Performance Difference Resulting from 10 timesHigher Critical Field Ec

SiC / Si Material Properties Comparison

Wide Bandgap → High Operating TemperatureHigh Critical Field → Low On-ResistanceHigh vsat → High FrequencyHigh Therm. Cond.→ High Power/ Temperature

C.M. Zetterling/KTH

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SiC Wafer Defects –Micropipes and Screw Dislocation Causing Low Processing Yield<5/cm2 Ultra-Low MP Density

<3/cm2 Required for 1200V/100A Devices

2002 SiC Wafer Production Capacity94% US Share


Challenges

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Biggest Device Performance Difference Resulting from 10 timesHigher Critical Field Ec

SiC / Si Material Properties Comparison

Wide Bandgap → High Operating TemperatureHigh Critical Field → Low On-ResistanceHigh vsat → High FrequencyHigh Therm. Cond.→ High Power/ Temperature

C.M. Zetterling/KTH

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Influence of Ec on Device Performance Consider pn-Junction

Design for High Blocking Voltage / Low On-ResistanceProper Selection of ND and W → E=0 for x=W

FOM (Figure of Merit)

Dc qN

W

E

ε1

=

spon

B

R

V

,

2

ARR spon ., =

C.M. Zetterling/KTH

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Influence of Ec on Device Performance

On-Resistance of Drift ZoneDepends on Ec

3

FOM SiC 2MW/cm2

Si 2 kW/cm2

Enables High Blocking Voltage Low On-State Loss SiC Unipolar Devices

areaA

ARR spon

...

., =High Voltage (Unipolar) Devices

Purdue University

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Influence of Ec on Device Performance Consider pn-Junction

Design for High Blocking Voltage / Low On-ResistanceProper Selection of ND and W → E=0 for x=W

FOM (Figure of Merit)

Dc qN

W

E

ε1

=

spon

B

R

V

,

2

ARR spon ., =

C.M. Zetterling/KTH

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Influence of Ec on Device Performance

On-Resistance of Drift ZoneDepends on Ec

3

FOM SiC 2MW/cm2

Si 2 kW/cm2

Enables High Blocking Voltage Low On-State Loss SiC Unipolar Devices

areaA

ARR spon

...

., =High Voltage (Unipolar) Devices

Purdue University

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Transport through Depleted RegionCauses Delay Time

WSiC = 1/10 WSivsat SiC = 3 vsat Si

SiC Power Switching DeviceProperties

High Frequency Devices

C.M. Zetterling/KTH

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High Temperature Devices


Intrinsic Carrier Concentration NiExponentially Dependent on Bandgap Eg

Ni must not ExceedDoping Level

!

C.M. Zetterling/KTH

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Transport through Depleted RegionCauses Delay Time

WSiC = 1/10 WSivsat SiC = 3 vsat Si


High Frequency Devices

C.M. Zetterling/KTH

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Intrinsic Carrier Concentration NiExponentially Dependent on Bandgap Eg

Ni must not ExceedDoping Level

!

C.M. Zetterling/KTH

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SiC Rectifier Diode Probe-Tested at600oC

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High Power Devices


Junction Temperature Rise Proportional to Power and Thermal Resistance

WSiC = 1/10 WSiLow Thermal Resistance

High Device Temperature Requires Advanced Packaging / Cooling C.M. Zetterling/KTH

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SiC Rectifier Diode Probe-Tested at600oC

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High Power Devices


Junction Temperature Rise Proportional to Power and Thermal Resistance

WSiC = 1/10 WSiLow Thermal Resistance

High Device Temperature Requires Advanced Packaging / Cooling C.M. Zetterling/KTH

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Summary of SiC Power Switching Device Properties

High Blocking CapabilityHigh Switching FrequencyHigh Operating Temperature

Low On-Resistance

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Basic Types of SiC Power Switching Devices

SiC pn-DiodeThreshold is ≈3Vdue to large Bandgap Eg=3.3eV

Potential ofBipolar Devices only forVB> 4…5kV

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Summary of SiC Power Switching Device Properties

High Blocking CapabilityHigh Switching FrequencyHigh Operating Temperature

Low On-Resistance

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Basic Types of SiC Power Switching Devices

SiC pn-DiodeThreshold is ≈3Vdue to large Bandgap Eg=3.3eV

Potential ofBipolar Devices only forVB> 4…5kV

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Best Reported WBG PowerDevice Performance June 04

75%/yearMOSFET → IGBTConductivity Modulation Could Reduce On-Resistance but Minority Carrier Charge must be Removed before Blocking –Results in Switching Losses

Progress in Blocking Voltage ofSiC Power MOSFETs

Purdue University

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Comparison of Unipolar and Bipolar SiC Power Switching Devices

20kV N-Channel MOSFET P-Channel IGBTN-Channel IGBT

Significantly Higher Current ofIGBTs at Package Limit

300W/cm2

Package Limit

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Best Reported WBG PowerDevice Performance June 04

75%/yearMOSFET → IGBTConductivity Modulation Could Reduce On-Resistance but Minority Carrier Charge must be Removed before Blocking –Results in Switching Losses

Progress in Blocking Voltage ofSiC Power MOSFETs

Purdue University

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Comparison of Unipolar and Bipolar SiC Power Switching Devices

20kV N-Channel MOSFET P-Channel IGBTN-Channel IGBT

Significantly Higher Current ofIGBTs at Package Limit

300W/cm2

Package Limit

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Status of 2004

Recent Development inDARPA Wide Bandgap (WBG) High Power Electronics (HPE) ProgramSiC MOSFET 2A/10kVSiC pin Diode 40A/10kV/200ns

Purdue University

SiC Power Switching DevicesPerformance Envelope

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SiC Schottky Diodes 600V 35A1200V 25A 1700V 40A

SiC MPS Diodes > 2kV 15ASiC Bipolar Diodes > 4kV 12A

SiC J-FETs 1200V 5A /10A1800V 3A / 8A

600V SiC Schottky DiodePositive Temp. Coefficient of VF

No Reverse Recovery Current

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Status of 2004

Recent Development inDARPA Wide Bandgap (WBG) High Power Electronics (HPE) ProgramSiC MOSFET 2A/10kVSiC pin Diode 40A/10kV/200ns

Purdue University

SiC Power Switching DevicesPerformance Envelope

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SiC Schottky Diodes 600V 35A1200V 25A 1700V 40A

SiC MPS Diodes > 2kV 15ASiC Bipolar Diodes > 4kV 12A

SiC J-FETs 1200V 5A /10A1800V 3A / 8A

600V SiC Schottky DiodePositive Temp. Coefficient of VF

No Reverse Recovery Current

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SiC J-FET

SiC J-FETSi Low-Voltage MOSFETCascode

TO-220 1300V / 4ARDS(on)= 0.47Ω @ 25°C, Vgs=0V RDS(on)= 1.47Ω @200°C, Vgs=0V

12k

VCC

Out

Out

GND

HCPL-3120

-24V

0V

5R 10nF

0V

SiC JFET

(a) (b)

Low RDS(on Fast Switching

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dv/dt max = 50kV/µs

SiC J-FET SwitchingCharacteristics

Pinch-Off Voltage

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SiC J-FET

SiC J-FETSi Low-Voltage MOSFETCascode

TO-220 1300V / 4ARDS(on)= 0.47Ω @ 25°C, Vgs=0V RDS(on)= 1.47Ω @200°C, Vgs=0V

12k

VCC

Out

Out

GND

HCPL-3120

-24V

0V

5R 10nF

0V

SiC JFET

(a) (b)

Low RDS(on Fast Switching

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Pinch-Off Voltage

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Output Transfer Characteristic

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Stacked High-VoltageSiC J-FET Switch

Alternative to Realization of a SingleHigh Voltage Bipolar Switch - Problem ofThick Epi Layer Growth Si Diodes with

Stable AvalancheDetermine StaticBlocking Voltage

Distribution4-Stack 8kV / 10A / 2Ω

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Output Transfer Characteristic

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Stacked High-VoltageSiC J-FET Switch

Alternative to Realization of a SingleHigh Voltage Bipolar Switch - Problem ofThick Epi Layer Growth Si Diodes with

Stable AvalancheDetermine StaticBlocking Voltage

Distribution4-Stack 8kV / 10A / 2Ω

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High-Voltage High-FrequencySiC Devices

DARPA Wide Bandgap (WBG) High Power Electronics (HPE) Program15kV Class Devices for2.5MVA Solid State Navy Ship Substations

EPRI Intelligent Universal Transformer ProgramAdvanced Distribution Automation and Power Quality Enhancement13.8kV – 120/240kV, 10…50kVA

Future Target 15kV / 20kHz, Tj =200°C PiN Diode, MOSFET, IGBT

Defense AdvancedResearch Project Agency

Hefner /NIST

0.048cm2 0.5cm2

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Low-Voltage Mature TechnologyApplications with High Potential Volumes

SMPS Motor Integrated Drives (100kHz) Hybrid Cars More Electric Aircraft

High-Voltage Rapid Development

Utility / Power Distribution Military Research Platforms

SiC Power SemiconductorApplication Areas

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High-Voltage High-FrequencySiC Devices

DARPA Wide Bandgap (WBG) High Power Electronics (HPE) Program15kV Class Devices for2.5MVA Solid State Navy Ship Substations

EPRI Intelligent Universal Transformer ProgramAdvanced Distribution Automation and Power Quality Enhancement13.8kV – 120/240kV, 10…50kVA

Future Target 15kV / 20kHz, Tj =200°C PiN Diode, MOSFET, IGBT

Defense AdvancedResearch Project Agency

Hefner /NIST

0.048cm2 0.5cm2

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Low-Voltage Mature TechnologyApplications with High Potential Volumes

SMPS Motor Integrated Drives (100kHz) Hybrid Cars More Electric Aircraft

High-Voltage Rapid Development

Utility / Power Distribution Military Research Platforms

SiC Power SemiconductorApplication Areas

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5% Employing Electronic Speed Control35% Possible Share / 40% Energy Saving Potential (16TWh)

400TWh Drives Energy Consumption in the EU60% Energy Saving Potential

Drive Systems60% of Electric Energy Utilized in Germany consumed by Drives

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Drive Systems

Active Front-End

Multi-Level Converter Topologies

1200V SiCSchottky Diodes

High-Voltage High-Frequency Replacing2-Level Systems Converters

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5% Employing Electronic Speed Control35% Possible Share / 40% Energy Saving Potential (16TWh)

400TWh Drives Energy Consumption in the EU60% Energy Saving Potential

Drive Systems60% of Electric Energy Utilized in Germany consumed by Drives

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Drive Systems

Active Front-End

Multi-Level Converter Topologies


High-Voltage High-Frequency Replacing2-Level Systems Converters

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Three-PhasePWM Inverter

Inverter Phase-Leg asdemonstrated by KEPCO

(Kansai Electric PowerCompany,Osaka/Japan)

and CREE in Feb. 20068 mm x 8 mm Chip Size6 mm x 6mm PiN diode

Metal Can Package Utilizing New High-Temperature Resin (up to 300°C) forDielectric Insulation

110kVA / Switching Frequency 2kHz4.5kV/100A SiC Gate-Turn-Off Thyristors2us Turn-Off TimeNo Snubber

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1

2 3

4

5

SiC-J-FET PWM Inverter Stage

Concept forNormally-OnInverterOperation

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Three-PhasePWM Inverter

Inverter Phase-Leg asdemonstrated by KEPCO

(Kansai Electric PowerCompany,Osaka/Japan)

and CREE in Feb. 20068 mm x 8 mm Chip Size6 mm x 6mm PiN diode

Metal Can Package Utilizing New High-Temperature Resin (up to 300°C) forDielectric Insulation

110kVA / Switching Frequency 2kHz4.5kV/100A SiC Gate-Turn-Off Thyristors2us Turn-Off TimeNo Snubber

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1

2 3

4

5

SiC-J-FET PWM Inverter Stage

Concept forNormally-OnInverterOperation

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-vGS

iS2

2 A/div

100 V/div

20 ns/div

20 V/divvDS2

-vGS

iS2

100 V/div

2 A/div

20 ns/div

20 V/div

vDS2

All-SiC-SparseMatrix Converter

Switching Frequency 100kHzOutput Power 1.5kW Efficiency η = 94%

D

G

S

DM

SiC-JFET

Si-MOSFET 1300V, 4A IXYS i4-Pack, SiCED1200V, 5A CREE SiC CSD05120

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DSP control

PWM generation

Measurement

Gate drive, auxiliary

Power circuit

Fan

Heat sink



D

G

S

DM

SiC-JFET

Si-MOSFET

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-vGS

iS2

2 A/div

100 V/div

20 ns/div

20 V/divvDS2

-vGS

iS2

100 V/div

2 A/div

20 ns/div

20 V/div

vDS2



D

G

S

DM

SiC-JFET

Si-MOSFET 1300V, 4A IXYS i4-Pack, SiCED1200V, 5A CREE SiC CSD05120

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DSP control

PWM generation

Measurement

Gate drive, auxiliary

Power circuit

Fan

Heat sink



D

G

S

DM

SiC-JFET

Si-MOSFET

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D

G

S

DM

SiC-JFET

Si-MOSFET

uDC

i2

uDC

uGS

uDS

5µs/div

1ms/div

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ComparativeEvaluation of Si-IGBT/SiC Diode BBC and IMC

IXYS FIO 50-12E

Isolated Half-Bridge Packages Integrating Si-IGBTs andSiC Schottky Diodes

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D

G

S

DM

SiC-JFET

Si-MOSFET

uDC

i2

uDC

uGS

uDS

5µs/div

1ms/div

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ComparativeEvaluation of Si-IGBT/SiC Diode BBC and IMC

IXYS FIO 50-12E

Isolated Half-Bridge Packages Integrating Si-IGBTs andSiC Schottky Diodes

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Hybrid Car

Series

Parallel

Self-Commitment of EU Automotive

Industry

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Hybrid Car

Power SystemArchitecture

300…500V High Voltage DC Bus14V Battery

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Hybrid Car

Series

Parallel

Self-Commitment of EU Automotive

Industry

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Hybrid Car

Power SystemArchitecture

300…500V High Voltage DC Bus14V Battery

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Ambient Temperature – 125°C at ICE105…115°C Coolant Inlet Junction Temperature – 200°C (275°C/EU HOPE)Simultaneously Increasing Reliability Requirements

High Temperature Power ElectronicsPackaging Technology with Matched CTEsHigh Power Density – 50kVA/l

Future Motor-IntegratedPower Electronics

State of the Art

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System Efficiency to be increased to 95% in 2015, other Parameters as for2010

Status based on PNGV (Partnership for New Generation of Vehicles) Automotive IPEM and Automotive Electric Motor Drive Program PNGV Coolant Temp.: 70°C, Table shows Estimated Values for 105°C

Technology GapsPower ElectronicsElectric Machines

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Ambient Temperature – 125°C at ICE105…115°C Coolant Inlet Junction Temperature – 200°C (275°C/EU HOPE)Simultaneously Increasing Reliability Requirements

High Temperature Power ElectronicsPackaging Technology with Matched CTEsHigh Power Density – 50kVA/l

Future Motor-IntegratedPower Electronics

State of the Art

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System Efficiency to be increased to 95% in 2015, other Parameters as for2010

Status based on PNGV (Partnership for New Generation of Vehicles) Automotive IPEM and Automotive Electric Motor Drive Program PNGV Coolant Temp.: 70°C, Table shows Estimated Values for 105°C

Technology GapsPower ElectronicsElectric Machines

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Technology Gaps for PowerElectronics and Integrated Propulsion System

!

!

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More Electric AircraftAir Traffic Growth 4.7%/a

Variable Frequency Power Generation270VDC Power DistributionReplacement of Hydraulic by Electric System

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Technology Gaps for PowerElectronics and Integrated Propulsion System

!

!

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More Electric AircraftAir Traffic Growth 4.7%/a

Variable Frequency Power Generation270VDC Power DistributionReplacement of Hydraulic by Electric System

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More Electric Aircraft

Power System Architecture

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Starter / GeneratorSystem

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Power System Architecture

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Starter / GeneratorSystem

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More Electric Fighter Aircraft Integrated Power Unit

US Air Force Research Laboratory

Research Programs Reduced Size and Mass Power Electronic SystemsHigh Temperature Electronics

Near Term (3 – 5 years)250…300°C max Component Temp.Eliminates need for Active Cooling

Far Term (5 – 9 years)300…350°C max.Supports ´High Speed´ Aircraft

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Flight ControlSurface Actuation

EHA Electro-Hydrostatic ActuatorEMA Electro-Mechanical Actuator

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More Electric Fighter Aircraft Integrated Power Unit

US Air Force Research Laboratory

Research Programs Reduced Size and Mass Power Electronic SystemsHigh Temperature Electronics

Near Term (3 – 5 years)250…300°C max Component Temp.Eliminates need for Active Cooling

Far Term (5 – 9 years)300…350°C max.Supports ´High Speed´ Aircraft

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Flight ControlSurface Actuation

EHA Electro-Hydrostatic ActuatorEMA Electro-Mechanical Actuator

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Three-Phase AC/DC Power Conversion withLow Effects on the Aircraft Mains

Unidirectional Buck+Boost Converter

Unidirectional Three-Level Boost Converter

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Three-Phase PMW Rectifier

Novel Technologies

COOLMOS / SiC-DiodesMicro-Channel Heat SinkHigh-Speed DSP-ControlFlat MagneticsHBW & CMR Current Sensing

Specifications 10 kW 3-Φ 480VAC800 VDC500 kHz10 kW/dm3

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Three-Phase AC/DC Power Conversion withLow Effects on the Aircraft Mains

Unidirectional Buck+Boost Converter

Unidirectional Three-Level Boost Converter

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Three-Phase PMW Rectifier

Novel Technologies

COOLMOS / SiC-DiodesMicro-Channel Heat SinkHigh-Speed DSP-ControlFlat MagneticsHBW & CMR Current Sensing

Specifications 10 kW 3-Φ 480VAC800 VDC500 kHz10 kW/dm3

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Switching LossMeasurements

Turn-onTurn-off

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20A/Div 100V/Div

uN

iN

P0=10kWUN=185V

5ms/Div

2 4 6 83 5 7 9 101 n

EN61000-3-2ClassA

Î(n) Î(1)=20.82A

2

4

3

5

1

THD = 2.06%

THD =2% @ P0=10kWη > 96%, P0=3…10kW

Three-Phase PMW RectifierPerformance

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Switching LossMeasurements

Turn-onTurn-off

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20A/Div 100V/Div

uN

iN

P0=10kWUN=185V

5ms/Div

2 4 6 83 5 7 9 101 n

EN61000-3-2ClassA

Î(n) Î(1)=20.82A

2

4

3

5

1

THD = 2.06%

THD =2% @ P0=10kWη > 96%, P0=3…10kW

Three-Phase PMW RectifierPerformance

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EMC InputFilter

ElectrolyticCapacitors

N 30%

30%

N 30%PowerCircuit / Cooling

Partitioning of the Converter Volume

Main Share of Passive Components

Increase of Switching Frequency

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Specifications17.5kW400VAC800VDC

Novel Three-Phase PMW Rectifier Power Module

Free-Wheeling Diodes 2 x 10A SiCPower Transistor CoolMOS 600V/45A

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EMC InputFilter

ElectrolyticCapacitors

N 30%

30%

N 30%PowerCircuit / Cooling

Partitioning of the Converter Volume

Main Share of Passive Components

Increase of Switching Frequency

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Specifications17.5kW400VAC800VDC

Novel Three-Phase PMW Rectifier Power Module

Free-Wheeling Diodes 2 x 10A SiCPower Transistor CoolMOS 600V/45A

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ETH ZurichSiC Power Electronics

ResearchThree-Phase 10k/l PWM Rectifier

Three-Phase All-SiC Matrix Three-Phase All-SiC PWM Inverter

Autonomous Drilling RobotHigh-Frequency Active Filter

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Autonomous Deep Drilling Robot

120kW Down-Hole ElectricDrilling Actuator

5kVDC Power Supply 5km Maximum Supply Length250°C Max. Operating Temp.

NASA –Honeybee RoboticsInchworm Deep Surface Platform

Power & DataTransmission

via Highly Flexible

Composite Coiled Tube

15…30°C/km

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ETH ZurichSiC Power Electronics

ResearchThree-Phase 10k/l PWM Rectifier

Three-Phase All-SiC Matrix Three-Phase All-SiC PWM Inverter

Autonomous Drilling RobotHigh-Frequency Active Filter

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120kW Down-Hole ElectricDrilling Actuator

5kVDC Power Supply 5km Maximum Supply Length250°C Max. Operating Temp.

NASA –Honeybee RoboticsInchworm Deep Surface Platform

Power & DataTransmission

via Highly Flexible

Composite Coiled Tube

15…30°C/km

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Ultra-Compact Drilling Actuator Power Electronics

Input Stage 5kVDC → 800VDC20…50 kHz

ActuatorModules

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6 GHZ.VA

Switching Frequency Power Product forUltra Compact SystemRealization

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Ultra-Compact Drilling Actuator Power Electronics

Input Stage 5kVDC → 800VDC20…50 kHz

ActuatorModules

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6 GHZ.VA

Switching Frequency Power Product forUltra Compact SystemRealization

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Highly Dynamic High-Voltage Active Filter

Si-Multi-Level ConverterReplaced by SiC-2-Level SystemWith Factor 10 Higher Switching Frequency

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Technology Gaps

• High Temperature Packaging• High Temperature Passives (Capacitors, Magnetics)• High Temperature Control Circuits• High Temperature Sensors

Advanced Cooling Systems

• High Frequency / High Current Interconnection Technology• High dv/dt Gate Drive (Optically Controlled Switch)• High Frequency High Voltage Passives • Advanced EMI Filtering / Parasitics Cancellation

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Highly Dynamic High-Voltage Active Filter

Si-Multi-Level ConverterReplaced by SiC-2-Level SystemWith Factor 10 Higher Switching Frequency

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Technology Gaps

• High Temperature Packaging• High Temperature Passives (Capacitors, Magnetics)• High Temperature Control Circuits• High Temperature Sensors

Advanced Cooling Systems

• High Frequency / High Current Interconnection Technology• High dv/dt Gate Drive (Optically Controlled Switch)• High Frequency High Voltage Passives • Advanced EMI Filtering / Parasitics Cancellation

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Oriented to High Power Devices < 2400V / 100…500A< 200W Device Dissipations

Planar Power Polymer Packaging (P4TM)

Wire-bonded Die on Ceramic Substrate Replaced with Planar Polymer-based Interconnect Structure

Direct High-conductivity Cooling Path

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• Reduces Wire Bond Resistance by Factor 100• Significantly Lower Switching Overvoltages• Reduced Switching Losses• No Ringing• Reduces EMI Radiation• Enables Topside Cooling• No Mechanical Stress of Wire Boding • Reduces CTE Wire Bond Stress of Chip Pads


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Oriented to High Power Devices < 2400V / 100…500A< 200W Device Dissipations


Wire-bonded Die on Ceramic Substrate Replaced with Planar Polymer-based Interconnect Structure

Direct High-conductivity Cooling Path

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• Reduces Wire Bond Resistance by Factor 100• Significantly Lower Switching Overvoltages• Reduced Switching Losses• No Ringing• Reduces EMI Radiation• Enables Topside Cooling• No Mechanical Stress of Wire Boding • Reduces CTE Wire Bond Stress of Chip Pads


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Future

Higher TemperaturesHigher Powers

Higher FrequenciesHigher Efficiencies

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Future

HOTHARDFAST

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Future

Higher TemperaturesHigher Powers

Higher FrequenciesHigher Efficiencies

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Future

HOTHARDFAST

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Documents

SiC User Forum Use of SiC Components in Power Electronic ... · SiC Power Switching Devices Performance Envelope 15/56 03/2006 SiC Power Semiconductor Devices SiC Schottky Diodes