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© 2014 ICQM
Chapter 4
Spin Valves
韩伟
量子材料科学中心
2021年05月07日
2
1. Metal Spin Valves
Local and Nonlocal spin valves
Hanle spin precession
Nano devices (Thanks to cleanroom)
Spin injection efficiency
Spin relaxation in Metals: EY mechanism
Review of this class
3
Review of last class
4
Review of last class
Spin Injection efficiency
5
Jedema, et al, PRB 67, 085319 (2003) Fabian & Das Sarma, PRL 81, 5624 (1998)
Review of last class
6
Summary
1. Semiconductor Spin Valves
When spintronics meets semiconductor
GaAs
Silicon and Germanium
Spin FET
Dynamic spin injection
7
This Class
3. Spin valves based on Superconductors and Quantum materials
8
Outline
1. Superconductor Spin Valves
Large MR
Spin injection, Long spin lifetime
Large spin Hall effect
Spin-Triplet
9
Superconductor
Onnes, Commun. Phys. Lab. (1911)
10
"Door meten tot weten" (Knowledge through measurement)
Superconductor
11
Superconductor
12
Ferromagnetism vs.Superconductor
13
Ferromagnetism vs.Superconductor
14
本课程共九章
一、自旋电子学简介
二、磁性和磁性材料
三、磁阻效应
四、自旋阀
五、自旋转移力矩
六、热自旋电子学
七、拓扑自旋流
八、反铁磁自旋电子学
九、超导自旋电子学
学习了解一些自旋电子学研究进展
15
Superconductor
Pena, et al, PRL 94, 057002 (2005)
LaCaMnO—YBaCuO—LaCaMnO multilayers
16
Superconductor
Miao, et al, PRL 101, 137001 (2008)
17
Superconductor
18
Superconductor
19
Superconductor
20
Superconductor
Nb (S)—BaFe12O19 (FM) Domain wall superconductivity
Yang, et al, Nature Materials, 3 , 793–798 (2004)
21
Spin injection into Superconductor
22
Spin injection into Superconductor
Yang, et al, Nature Materials, 9 , 586–593 (2010)
23
Spin injection into Superconductor
24
Spin injection into Superconductor
Long spin lifetime
25
Spin injection into Superconductor
Al
Quay, et al, Nature Physics, 9 , 84–88 (2013)
26
Spin injection into Superconductor
Transition from N S
27
Spin injection into Superconductor
Transition from N S
28
Spin injection into Superconductor
Transition from N S
29
Spin injection into Superconductor
Spin absorption by Nb
Wakamura, et al, PRL, 112, 036602 (2014)
30
Spin injection into Superconductor
31
Spin Hall in Superconductor
Wakamura, et al, Nature Materials, 14 , 675–678 (2015)
32
Spin Hall in Superconductor
Wakamura, et al, Nature Materials, 14 , 675–678 (2015)
33
Spin Hall in Superconductor
34
Spin pumping into Superconductor
Yao, et al, PRB, 97, 224414 (2018)
35
Josephson junction
Single electron tunneling? Tunneling as a pair?
VS
36
Spin Triplet
Keizer, et al, Nature, 439 , 825–827 (2006)
37
Spin Triplet
Robinson, et al, Science, 329, 59-61 (2010)
38
FM SC SS
H
M
Spin triplet
Jeon, et al, Nature Materials, 17 , 499–503 (2018)
39
本课程共九章
一、自旋电子学简介
二、磁性和磁性材料
三、磁阻效应
四、自旋阀
五、自旋转移力矩
六、热自旋电子学
七、拓扑自旋流
八、反铁磁自旋电子学
九、超导自旋电子学
学习了解一些自旋电子学研究进展
© 2014 ICQM
休息10分钟
41
42
Outline
2. Spin valves based on Quantum materials
石墨烯 弱自旋-轨道耦合 长自旋寿命
二硫化钼等 自旋-谷
拓扑绝缘体 自旋流的拓扑保护
4343
conductivity mismatch
Small spin signal (mainly work at low temperatures)
Short spin lifetimesLarge velocity of electrons
Conductivity similar to FM
RT operation
Disadvantages Advantages
Metals Semiconductors
Advantages Disadvantages
Long spin lifetimes
Tunable carrier density
Graphene
4444
conductivity mismatch
Small spin signal (mainly work at low temperatures)
Short spin lifetimes
Disadvantages
Metals Semiconductors
Disadvantages
Graphene combines the advantages of both metals and semiconductors
Graphene
Large velocity of electrons
Conductivity similar to FM
RT operation
AdvantagesAdvantages
Long spin lifetimes
Tunable carrier density
Graphene
4545
Graphite Graphene
Massless Dirac FermionsSemimetal
k
E
EF
k
E
EF
Spin-dependent properties
Long spin lifetime(~ µs)
Low intrinsic spin-orbit coupling
High mobility
Long spin transport length
Gmitra, et al, Phys. Rev. B, 79, 012403 (2009)Abdelouahed, et al, Phys. Rev. B, 82, 125424 (2010)
D
Graphene
4646
Graphene spin devicesE3 E4E2E1
Si
SiO2
Electrostatic gate
Vgate
Graphene
MgOCo Ti
Samples
10 µm
Graphene spin valves
47
)exp()(
,0,0
0
xx
tB
Diffuse without precession
Graphene spin valves
48
Transparent contact Pinhole contact Tunneling contact
Co
graphene
MgOCo
graphene
MgOCo
graphene
Co
graphene
Co
graphene
MgO
E.I. Rashba, Phys. Rev. B 62, 16267(R) (2000) A. Fert, H. Jaffres, Phys. Rev. B 64, 184420 (2001).
Graphene spin valves
49
Transparent contact
Co
graphene
ΔRNL
T = 300 K
-40 -20 0 20 40
-100
-50
0
50
100
H (mT)
RN
L(m
Ω)
Nonlocal MR: ~ 0.1 ohmsSpin injection efficiency: ~ 1 %
Graphene spin valves
50
Pinhole contact
MgOCo
graphene
-6 0 -4 0 -2 0 0 2 0 4 0 6 0
-2
0
2
4L = 2 m
R(
)
H (m T )
T = 3 0 0 K
Nonlocal MR: ~ 10 ohmsSpin injection efficiency: ~ 8 %
Graphene spin valves
51
Tunneling contact
MgOCo
graphene
Nonlocal MR: ~130 ohmsSpin injection efficiency: ~ 30 %
Graphene spin valves
52
Spin flip during momentum scattering events:More momentum scattering, more spin relaxation.
s pts~ tp
J. Fabian, et al, Acta Phys. Slovaca (2007)R.J. Elliott, Phys. Rev. 96, 280 (1954)Josza, et al, Phys. Rev. B, 80, 241403(R) (2009)
Spin relaxation in graphene
53
More momentum scattering, less spin relaxation
s pts~ 1/tp
Momentum scattering can reduce this effect by randomizing the field
M. I. D'yakonov and V.I. Perel, Sov. Phys. Solid State, 13, 3023 (1972)
Spin relaxation in graphene
54
Elliot-Yafet
Vg -VD (V)
t s(p
s)
D(1
0-2
m2/s
)
T = 4K
ts~ tp ~ D
Spin relaxation in graphene
55
Dyakonov-Perel
Vg -VD (V)
t s(n
s)
D(1
0-2
m2/s
)
T = 4K
BLG
ts~ 1/tp ~ 1/D
Spin relaxation in graphene
56
1
s
1
sEY
1
sDP
KEY
DKDPD
SLG
BLG
KEY = 3.05 ± 0.35 (10-2 m2s-1)ns-1
KDP = -0.02 ± 0.10 (10-2 m2s-1)-1ns-1
KEY = 0.05 ± 0.01 (10-2 m2s-1) ns-1
KDP = 1.24 ± 0.09 (10-2 m2s-1)-1 ns-1
Spin relaxation in graphene
57
Dyakonov-PerelElliot-Yafet
Tombros, et al, Nature (2007)
Tombors, et al, PRL(2008)
Jozsa, et al, PRB (2009)
Han and Kawakami, PRL (2011)
~ 150 ps, impurity (EY)
Anisotropy (EY)
Linear scaling of λ & D (EY)
~1 ns, ts~ tp(D) (EY)
Han and Kawakami, PRL (2011)
Yang, et al, PRL (2011)
Up to 6 ns, ts~ 1/tp(1/D) (DP)
Up to 2 ns, ts~ 1/µ (DP)
Being under investigation: Random Rashba field Magnetic resonant scattering
Wang and Wu, et al, NJP (2012)
Kochan, et al, arXiv:1306.0230 (2013)
Spin relaxation in graphene
5858
D
Spin diffusion length
5959
Suspended graphene
Spin diffusion lengths 1-5 microns
Guimarães, et al, Nano Letters, 12, 3512-3517 (2012).Han, et al, Nano Letter, 12, 3443–3447 (2012).
Spin diffusion length
6060
Guimarães, et al, PRL, 113, 086602 (2014)Drogeler, et al, Nano Letter, 14, 6050-6055 (2014)
Spin diffusion lengths >10 microns
Mobility > 1.0 m2/Vs
Spin diffusion length
6161
Guimarães, et al, PRL, 113, 086602 (2014)
Anisotropy
6262
Guimarães, et al, PRL, 113, 086602 (2014)
Anisotropy
6363Dlubak, et al, Nature Physics, 8, 557–561 (2012)
An indirect method-- local MR measurement
Spin diffusion lengths >100 microns
Spin diffusion length
6464
Spin lifetime Spin diffusion
lengths
Spin signals
Room
Temperature 0.5 - 2 ns > 10 µm 130 Ω
Low
Temperature 1 - 6 ns
> 10 µm
(> 100 µmindirect)
1 MΩ for local MR
Spin properties of graphene
6565
Spin properties of graphene
6666
Graphene
Large spin signal
Long spin lifetime
Long spin diffusion length
Easy to manipulate
Han, et al, Nature Nanotechnology, 9, 794-807 (2014)
Spin properties of graphene
6767
ON
OFF
(a) (b)
Yan, et al, Nat. Commun. 7, 13372 (2016).Dankert and Dash, Nat. Commun. 8, 16093 (2017).
Graphene/MoS2 channel
Graphene spin transistor
6868
Yan, et al, Nat. Commun. 7, 13372 (2016).Dankert and Dash, Nat. Commun. 8, 16093 (2017).
Graphene/MoS2 channel: gate tuning the channel and spin lifetimes
Graphene spin transistor
69
MoS2
Xiao, et al, PRL, 110, 066803 (2013)
70
Spin and Valley Hall in MoS2
Xiao, et al, PRL, 110, 066803 (2013)
71
Spin and Valley Hall in MoS2
Mak, et al, Science, 344, 1489-1492 (2014)
72
Spin and Valley Hall in MoS2
Mak, et al, Science, 344, 1489-1492 (2014)
73
Spin and Valley Hall in MoS2
74
Ising SC in MoS2 and NbSe2
Saito, Y., Nojima, T. & Iwasa, Y. Nat. Rev. Mater. 2, 16094, (2016)
75
Topological insulator
Topological insulators– Spin-Momentum locking
2D Topological insulator 3D Topological insulator
Qi & Zhang, Rev. Mod. Phys. 83, 1057 (2011)Hasan & Kane, Rev. Mod. Phys. 82, 3045 (2010)Yazyev, et al, Phys. Rev. Lett. 105, 266806 (2010).
7676
Spin ARPES: Hasan Group (Priceton University)
Topological insulator
7777Li, et al, Nature Nanotechnology, 9 , 218–224 (2014).
Topological insulator
7878
More information, please see the results ofJonker Group (Naval National Lab), KL Wang Group (UCLA) , Y. Chen Group (Purdue University) , etc
Topological insulator
79
Topological insulator
Shiomi, et al, PRL, 113, 196601 (2014)
80
Topological insulator
81
Topological insulator
Kim et al, Scientific Reports, 3, 3150 (2013)
82
Bulk states
Surfacestates
Temperature dependence
Topological insulator
83
Topological insulator
SmB6 BiSbSeTe
Shiomi, et al, PRL, 113, 196601 (2014)Xu, et al, Nature Comm., 5, 4566 (2014)
84
Outline
1. Superconductor Spin Valves
Large MR
Spin injection, Long spin lifetime
Large spin Hall effect
Spin-Triplet
85
Summary
2. Spin valves based on Quantum materials
石墨烯 弱自旋-轨道耦合 长自旋寿命
二硫化钼等 自旋-谷
拓扑绝缘体 自旋流的拓扑保护
© 2014 ICQM
下一节课: May 14th
Chapter 5: Spin transfer torque
课件下载:http://www.phy.pku.edu.cn/han_group/Teaching.htm