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Quantum Mechanics and Nanoelectronics
Thomas PrevenslikQED Radiations
Discovery Bay, Hong Kong
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
1
Nanoelectronics became popularized by Chua in 1971 claiming [1] a circuit element existed having a resistance that depended on the time–integral of
the current.
Based on symmetry arguments, electronics based on the resistor, capacitor, and inductor was considered incomplete.
For completeness, Chua proposed a fourth element:
Memristor
[1] L. O. Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, pp. 507–519, 1971.
Introduction
2 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Background
Chua lacked a working prototype, and the memristor lay dormant for almost 40 years
In 2008, a group at Hewlett-Packard (HP) developed [2] a memristor comprising a thin film of TiO2 sandwiched between
Pt electrodes.
2. D. B. Strukov, et al., “The missing memristor found,” Nature 453, 7191 (2008).
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
3
HP Memristor
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
The memristor is basically a variable resistor dependent on the current I that flows by the amount of charge Q transferred.
Q = I dt
HP claims the charge is caused by oxygen vacancies in the TiO2 that act as positive charge holes moving under the bias voltage
that change the memristor resistance during the cycle
4
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Problem
Memristor behavior is found without oxygen vacancies in molecular layers between gold electrodes and in single
materials without electrodes, e.g., silicon nanowires
Lacking vacancies, explanations of memristor behavior assume the presence of space charge, but the mechanism by which the
space charge is produced is not identified.
5
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Observations
Memristor behavior only observed at the nanoscale. (Thin films, nanowire, etc)
At the macroscale, memristors behave like ordinary resistors where resistance is voltage divided by current.
The observations suggest a QM size effect
QM = Quantum Mechanics
6
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Space Charge
In this talk I will convince you that QM creates charge Q anytime EM energy is absorbed at the nanoscale
For memristors, the EM energy is Joule heating.
But QM requires the heat capacity of the thin film to vanish so the Joule heat cannot be conserved by an increase in temperature.
Instead, conservation proceeds by the QED induced creation of QED photons inside the film, the QED photons creating charge Q by Einstein’s photoelectric
effect.
QED = Quantum Electrodynamics
7
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
d
t
t
QED Radiation
+
-
D
QED Radiation
I
+
-
D
Ld
t
t
Thin Film Nanowire
8
Memristor Geometry
II
Proposal
The charge in nanoelectronic circuit elements is a QM effect caused by photolysis from QED radiation created from the conservation of Joule heat that otherwise is conserved by
an increase in temperature.
At the nanoscale, QM creates charge instead of the classical increase in temperature
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
9
Heat Capacity of the Atom
1
kT
hcexp
hc
E
10
Nanostructures
kT 0.0258 eV
Classical Physics (kT > 0)
QM(kT = 0)
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
In nanostructures, QM requires atoms to have zero heat capacity
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Conservation of EnergyLack of heat capacity by QM precludes Joule heat
conservation in memristors by an increase in temperature, but how does conservation proceed?
Conservation ProposalGenerally, absorbed EM energy is conserved by creating QED
photons inside the nanostructure - by frequency up or down - conversion to the TIR resonance of the nanostructure.
TIR = Total Internal Reflection
Up-conversion produces high energy QED photons in memristors, but down-
conversion also occurs, e.g., redshift of galaxy light in dust in the 2011
Nobel in physics on an expanding Universe
11
Since the refractive index of the memristor is greater than that of the surroundings, the QED photons are confined by TIR (Tyndall 1870)
Memristors ( films, wires) have high surface to volume ratio, but why important?
Propose EM energy absorbed in the surface of memristors provides the TIR confinement of the QED photons.
Since the QED photons have wave functions that vanish normal to the surface, QED photons are spontaneously created by Joule heat dissipated in
memristors
f = c/ = 2nd (or 2nD) E = hf
TIR Confinement
12 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
For a spherical NP having diameter D, = 2D
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
QED Heat Transfer
13
QED Photons
Phonons
QQED is non-thermal radiation at TIR frequency
Currently, K < Bulk in thin films is explained by scattering of phonons, but if QQED is included in
heat balance, then K = Bulk
QED Radiation
QED Photons and Excitons
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
QED Photon Rate
P = Joule heatE = QED Photon energy = Absorbed Fraction
Exciton Rate
Y = Yield of Excitons / QED Photon
14
Exciton Response
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Where, QE and QH are number electrons and holes, F is the field, and
E and H are electron and hole mobility
Electrons Holes
15
Solution by Integrating factor gives
Taking F = Vo sin t / d,
Resistance and Current
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
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= Conductivity = Resistivity
Simulation
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
17
RI
d = 50 nm , f = 5 kHz, and Vo = 1 V Ro = 100 and P = 10 mW
H = 2x10-6 cm2/V-s
Hysteresis Curve
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
18
Modern day electronics was developed for the macroscale, but a QM approach is suggested at the nanoscale where memristive effects are
observed.
Memristive effects in PCRAM films by melting are negated by QM. Ovshinsky’s redistribution of charge carriers by QM is more likely.
Memristors have nothing to do with the notion of the missing fourth element necessary for completeness. Memristor behavior is simply a QM size effect.
Conclusions
19 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Expanding Unverse
In 1929, Hubble measured the redshift of galaxy light that by the Doppler Effect showed the Universe is expanding.
But cosmic dust of submicron NPs permeate space and redshift galaxy light without Universe expansion
20
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
21Redshift without Universe expansion
Based on classical physics, astronomers assume absorbed galaxy photon increases temperature of dust NPs
Redshift in Cosmic Dust
ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011
Referring to his calculation showing acccelerated Universe expansion, Reiss is quoted as saying:
"I remember thinking, I've made a terrible mistake and I have to find this mistake"
Others said: “[Riess] did a lot after the initial result to show that there was no sneaky effect due to dust absorption“
Reiss did make a mistake - Redshift does occur in dust No Universe expansion, accelerated or otherwise
22
Nobel Mistake
Astronomers Schmidt, Pearlmutter, and Reiss got the 2011 Nobel in Physics for an accelerated expanding Universe
Questions & Papers
Email: [email protected]
http://www.nanoqed.org
23 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011