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Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011 1

Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

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Page 1: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Quantum Mechanics and Nanoelectronics

Thomas PrevenslikQED Radiations

Discovery Bay, Hong Kong

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

1

Page 2: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Nanoelectronics became popularized by Chua in 1971 claiming [1] a circuit element existed having a resistance that depended on the time–integral of

the current.

Based on symmetry arguments, electronics based on the resistor, capacitor, and inductor was considered incomplete.

For completeness, Chua proposed a fourth element:

Memristor

[1] L. O. Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, pp. 507–519, 1971.

Introduction

2 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Page 3: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Background

Chua lacked a working prototype, and the memristor lay dormant for almost 40 years

In 2008, a group at Hewlett-Packard (HP) developed [2] a memristor comprising a thin film of TiO2 sandwiched between

Pt electrodes.

2. D. B. Strukov, et al., “The missing memristor found,” Nature 453, 7191 (2008).

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

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Page 4: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

HP Memristor

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

The memristor is basically a variable resistor dependent on the current I that flows by the amount of charge Q transferred.

Q = I dt

HP claims the charge is caused by oxygen vacancies in the TiO2 that act as positive charge holes moving under the bias voltage

that change the memristor resistance during the cycle

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Page 5: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Problem

Memristor behavior is found without oxygen vacancies in molecular layers between gold electrodes and in single

materials without electrodes, e.g., silicon nanowires

Lacking vacancies, explanations of memristor behavior assume the presence of space charge, but the mechanism by which the

space charge is produced is not identified.

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Page 6: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Observations

Memristor behavior only observed at the nanoscale. (Thin films, nanowire, etc)

At the macroscale, memristors behave like ordinary resistors where resistance is voltage divided by current.

The observations suggest a QM size effect

QM = Quantum Mechanics

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Page 7: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Space Charge

In this talk I will convince you that QM creates charge Q anytime EM energy is absorbed at the nanoscale

For memristors, the EM energy is Joule heating.

But QM requires the heat capacity of the thin film to vanish so the Joule heat cannot be conserved by an increase in temperature.

Instead, conservation proceeds by the QED induced creation of QED photons inside the film, the QED photons creating charge Q by Einstein’s photoelectric

effect.

QED = Quantum Electrodynamics

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Page 8: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

d

t

t

QED Radiation

+

-

D

QED Radiation

I

+

-

D

Ld

t

t

Thin Film Nanowire

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Memristor Geometry

II

Page 9: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Proposal

The charge in nanoelectronic circuit elements is a QM effect caused by photolysis from QED radiation created from the conservation of Joule heat that otherwise is conserved by

an increase in temperature.

At the nanoscale, QM creates charge instead of the classical increase in temperature

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

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Page 10: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Heat Capacity of the Atom

1

kT

hcexp

hc

E

10

Nanostructures

kT 0.0258 eV

Classical Physics (kT > 0)

QM(kT = 0)

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

In nanostructures, QM requires atoms to have zero heat capacity

Page 11: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Conservation of EnergyLack of heat capacity by QM precludes Joule heat

conservation in memristors by an increase in temperature, but how does conservation proceed?

Conservation ProposalGenerally, absorbed EM energy is conserved by creating QED

photons inside the nanostructure - by frequency up or down - conversion to the TIR resonance of the nanostructure.

TIR = Total Internal Reflection

Up-conversion produces high energy QED photons in memristors, but down-

conversion also occurs, e.g., redshift of galaxy light in dust in the 2011

Nobel in physics on an expanding Universe

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Page 12: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Since the refractive index of the memristor is greater than that of the surroundings, the QED photons are confined by TIR (Tyndall 1870)

Memristors ( films, wires) have high surface to volume ratio, but why important?

Propose EM energy absorbed in the surface of memristors provides the TIR confinement of the QED photons.

Since the QED photons have wave functions that vanish normal to the surface, QED photons are spontaneously created by Joule heat dissipated in

memristors

f = c/ = 2nd (or 2nD) E = hf

TIR Confinement

12 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

For a spherical NP having diameter D, = 2D

Page 13: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

QED Heat Transfer

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QED Photons

Phonons

QQED is non-thermal radiation at TIR frequency

Currently, K < Bulk in thin films is explained by scattering of phonons, but if QQED is included in

heat balance, then K = Bulk

QED Radiation

Page 14: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

QED Photons and Excitons

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

QED Photon Rate

P = Joule heatE = QED Photon energy = Absorbed Fraction

Exciton Rate

Y = Yield of Excitons / QED Photon

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Page 15: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Exciton Response

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Where, QE and QH are number electrons and holes, F is the field, and

E and H are electron and hole mobility

Electrons Holes

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Solution by Integrating factor gives

Taking F = Vo sin t / d,

Page 16: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Resistance and Current

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

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= Conductivity = Resistivity

Page 17: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Simulation

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

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RI

d = 50 nm , f = 5 kHz, and Vo = 1 V Ro = 100 and P = 10 mW

H = 2x10-6 cm2/V-s

Page 18: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Hysteresis Curve

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

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Page 19: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Modern day electronics was developed for the macroscale, but a QM approach is suggested at the nanoscale where memristive effects are

observed.

 

Memristive effects in PCRAM films by melting are negated by QM. Ovshinsky’s redistribution of charge carriers by QM is more likely.

Memristors have nothing to do with the notion of the missing fourth element necessary for completeness. Memristor behavior is simply a QM size effect.

Conclusions

19 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Page 20: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Expanding Unverse

In 1929, Hubble measured the redshift of galaxy light that by the Doppler Effect showed the Universe is expanding.

But cosmic dust of submicron NPs permeate space and redshift galaxy light without Universe expansion

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Page 21: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

21Redshift without Universe expansion

Based on classical physics, astronomers assume absorbed galaxy photon increases temperature of dust NPs

Redshift in Cosmic Dust

Page 22: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011

Referring to his calculation showing acccelerated Universe expansion, Reiss is quoted as saying:

"I remember thinking, I've made a terrible mistake and I have to find this mistake"

Others said: “[Riess] did a lot after the initial result to show that there was no sneaky effect due to dust absorption“

Reiss did make a mistake - Redshift does occur in dust No Universe expansion, accelerated or otherwise

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Nobel Mistake

Astronomers Schmidt, Pearlmutter, and Reiss got the 2011 Nobel in Physics for an accelerated expanding Universe

Page 23: Quantum Mechanics and Nanoelectronics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics,

Questions & Papers

Email: [email protected]

http://www.nanoqed.org

23 ICMON 2011 : Inter.l Conf. Micro, Opto, Nanoelectronics, Venice, Nov. 28-30, 2011