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Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory Mike Downer, University of Texas at Austin, DMR-0207295 Modern nano-scale devices contain such thin films or small particles of silicon that unusual bonding structures at the interfaces can dominate device properties. For example, interfacial Si=O double bonds and oxygen vacancies cause Si nano-crystals to luminesce brightly, unlike bulk Si. Full understanding of such nano-interfaces requires noninvasive probes such as optical second- harmonic generation that can measure the spectrum of these otherwise inaccessible buried interfaces. Here we show second-harmonic light TEM 01 mode of second-harmonic light generated at buried Si nano-interfaces TEM 00 mode of incident laser experiment theory scanning electron micrograph of a single Si nanocrystal luminescence from Si nano-composite 3 nm

Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory Mike Downer, University of Texas at Austin,

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Page 1: Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory Mike Downer, University of Texas at Austin,

Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory

Mike Downer, University of Texas at Austin, DMR-0207295Modern nano-scale devices contain such thin films or small particles of silicon that unusual bonding structures at the interfaces can dominate device properties. For example, interfacial Si=O double bonds and oxygen vacancies cause Si nano-crystals to luminesce brightly, unlike bulk Si. Full understanding of such nano-interfaces requires noninvasive probes such as optical second-harmonic generation that can measure the spectrum of these otherwise inaccessible buried interfaces. Here we show second-harmonic light generated at Si nano-interfaces emerging in a double-lobed transverse mode, as predicted by our theoretical collaborators.

Appl. Phys. Lett. 81, 3034 (2002)

Phys. Rev. Lett. 94, 047401 (2005)

TEM01 mode of second-harmonic lightgenerated at buried Si nano-interfaces

TEM00

mode ofincidentlaser

experiment theory

scanning electron micrograph of a

single Si nanocrystal

luminescence fromSi nano-composite

3 nm

Page 2: Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory Mike Downer, University of Texas at Austin,

Education:Two REU undergraduates (Brian Mattern, James C. Miller) and four Ph.D. students (Ramon Carriles-Jaimes, Peter Figliozzi, Jinhee Kwon, Liangfeng Sun) are contributing to this work.

Outreach:PI Mike Downer lectures to students in the “Lasers & Optics” class of Prof. Dhiraj K. Sardar, winner of the 2003 APS prize for research at an undergraduate institution, at nearby UT-San Antonio.*

Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory

Mike Downer, University of Texas at Austin, DMR-0207295

Graduate student Jinhee Kwon (left) with our theory collaborator Bernardo Mendoza (right) of Centro de Investi-

gaciones en Optica (CIO), León, Méxicoat the 5th International Conference on

Optics of Surfaces & Interfaces in León,May 2003.

Graduate students Liangfeng Sun (left)

and Ramon Carriles-Jaimes

(right)

October 2004

* More than 56 percent of UTSA's students come from groups underrepresented in higher education. UTSA ranks 4th in thenation in number of undergraduate degrees to Hispanics.

Page 3: Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory Mike Downer, University of Texas at Austin,

Nonlinear spectroscopy of planar and nano-crystalline silicon interfaces: experiments for ab initio theory

Mike Downer, University of Texas at Austin, DMR-0207295

Technician displaying a 12” waferat Sematech’s Austin, Texasfacility.

Industrial Liaison & Fund Leveraging:

In summer 2004, the PI was awarded a grantby Austin-based Sematech to characterizesilicon/high-K dielectric interfaces using the methods developed under this NSF project.

Grant Title: “Spectroscopic Methods for CharacterizingHigh-K dielectric films and Nanometer-Scale SiliconChannel Structures”

Grant amount: $100K Sematech liaison: Alain C. Diebold*

*editor of Handbook of Silicon Semiconductor Metrology (Marcel Dekker, 2001)