MOSFETMetalOxideSemiconductorFieldEffectTransistor

OptiMOSTM

OptiMOSTM3Power-Transistor,100VIPT020N10N3

DataSheetRev.2.0Final

PowerManagement&Multimarket

2

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

Tab

12 3 4 5

86 7

HSOF

DrainTab

GatePin 1

SourcePin 2-8

1DescriptionFeatures•N-channel,normallevel•ExcellentgatechargexRDS(on)product(FOM)•Extremelylowon-resistanceRDS(on)•Highcurrentcapability•175°Coperatingtemperature•Pb-freeleadplating;RoHScompliant•QualifiedaccordingtoJEDEC1)fortargetapplication•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 100 V

RDS(on),max 2 mΩ

ID 300 A

Type/OrderingCode Package Marking RelatedLinksIPT020N10N3 PG-HSOF-8-1 020N10N3 -

1) J-STD20 and JESD22

3

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID --

--

300212 A TC=25°C1)

TC=100°C

Pulsed drain current 1) ID,pulse - - 1200 A TC=25°C

Avalanche energy, single pulse EAS - - 800 mJ ID=150A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot - - 375 W TC=25°C

Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56

3Thermalcharacteristics

Table3ThermalcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Thermal resistance junction - case RthJC - 0.2 0.4 K/W -

Thermal resistance junction - ambient,minimal footprint RthJA - - 62 K/W -

Thermal resistance junction - ambient,6 cm2 cooling area 2) RthJA - - 40 K/W -

1) See figure 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.

5

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

4Electricalcharacteristics

Table4StaticcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=272µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=100V,VGS=0V,Tj=25°C

VDS=100V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

1.72.2

23.7 mΩ VGS=10V,ID=150A

VGS=6V,ID=75A,

Gate resistance RG - 1.9 2.9 Ω -

Transconductance gfs 125 250 - S |VDS|>2|ID|RDS(on)max,ID=150A

Table5DynamiccharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Input capacitance Ciss - 11200 14896 pF VGS=0V,VDS=50V,f=1MHz

Output capacitance Coss - 2010 2673 pF VGS=0V,VDS=50V,f=1MHz

Reverse transfer capacitance Crss - 69 138 pF VGS=0V,VDS=50V,f=1MHz

Turn-on delay time td(on) - 34 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω

Rise time tr - 58 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω

Turn-off delay time td(off) - 84 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω

Fall time tf - 18 - ns VDD=50V,VGS=10V,ID=100A,RG,ext=1.6Ω

Table6Gatechargecharacteristics1)Values

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Gate to source charge Qgs - 48 - nC VDD=50V,ID=100A,VGS=0to10V

Gate to drain charge Qgd - 27 - nC VDD=50V,ID=100A,VGS=0to10V

Switching charge Qsw - 42 - nC VDD=50V,ID=100A,VGS=0to10V

Gate charge total Qg - 156 207 nC VDD=50V,ID=100A,VGS=0to10V

Gate plateau voltage Vplateau - 4.3 - V VDD=50V,ID=100A,VGS=0to10V

Output charge Qoss - 55 - nC VDD=50V,VGS=0V

1) See ″Gate charge waveforms″ for parameter definition

6

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

Table7ReversediodeValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Diode continous forward current IS - - 300 A TC=25°C

Diode pulse current IS,pulse - - 1200 A TC=25°C

Diode forward voltage VSD - 0.89 1 V VGS=0V,IF=150A,Tj=25°C

Reverse recovery time trr - 86 172 ns VR=50V,IF=IS,diF/dt=100A/µs

Reverse recovery charge Qrr - 232 - nC VR=50V,IF=IS,diF/dt=100A/µs

7

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 50 100 150 2000

50

100

150

200

250

300

350

400

450

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 50 100 150 2000

50

100

150

200

250

300

350

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 102 10310-1

100

101

102

103

104

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-2

10-1

100

0.5

0.2

0.1

0.05

0.02

0.01single pulse

ZthJC=f(tp);parameter:D=tp/T

8

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 2 3 4 50

200

400

600

800

1000

1200

10 V

7.5 V

6 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 200 400 600 800 1000 12000

1

2

3

4

5

6

4.5 V

5 V

6 V

7.5 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

200

400

600

800

1000

1200

175 °C 25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 50 100 150 2000

50

100

150

200

250

300

gfs=f(ID);Tj=25°C

9

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

1

2

3

4

5

6

max

typ

RDS(on)=f(Tj);ID=150A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

2750 µA

275 µA

VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60 80 100101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

104

25 °C175 °C25 °C, 98%175 °C, 98%

IF=f(VSD);parameter:Tj

10

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

Diagram13:Avalanchecharacteristics

tAV[µs]

IAS [A]

100 101 102 103100

101

102

103

25 °C

100 °C

150 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 40 80 120 1600

2

4

6

8

10

80 V

50 V

20 V

VGS=f(Qgate);ID=100Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18090

95

100

105

110

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

11

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

6PackageOutlines

Z8B00169619

REVISION

ISSUE DATE

EUROPEAN PROJECTION

01

14-06-2013

DOCUMENT NO.

E5

E4

K1

e

MILLIMETERS

A

DIM

MIN MAX

INCHES

MIN MAX

b1

c

D

D2

E

E1

N

L

2.20 2.40 0.087 0.094

9.70

0.40

10.28

9.70

1.60

9.90

0.60

10.58

10.10

2.10

0.382

0.016

0.405

0.382

0.063

0.390

0.024

0.416

0.398

0.083

8 8

1.20 (BSC) 0.047 (BSC)

b 0.70 0.90 0.028 0.035

1) partially covered with Mold Flash

b2 0.42 0.50 0.017 0.020

H

H1

11.48 11.88 0.452 0.468

H2 7.15 0.281

H3 3.59 0.141

H4 3.26 0.128

L1 0.50 0.90 0.020 0.035

3.30 0.130

7.50 0.295

8.50 0.335

9.46 0.372

6.55 6.75 0.258 0.266

4.18 0.165

L4 1.00 1.30 0.039 0.051

L2 0.50 0.70 0.020 0.028

2

SCALE

0

4mm

0

2

Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches

12

OptiMOSTM3Power-Transistor,100V

IPT020N10N3

Rev.2.0,2014-02-17Final Data Sheet

RevisionHistoryIPT020N10N3

Revision:2014-02-17,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2014-02-17 Release of final version

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