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7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
http://slidepdf.com/reader/full/mosfet-characteristics-ece126-laboratory-1 1/13
NIOS gna VIOS Clgrgct`rdstdcs
St`p 7:
Conn`ct tl` NIOS gna VIOS. Sdiuegt` tl` Das – Xbs clgrgct`rdstdcs curv`.
Ql`s` gr` tl` SVDC@ coa`s hor kotl NIOS
gna VIOS conn`ctdons. Gs dt ds oks`rv`a,
NIOS gna VIOS lgs e`nbtl oh 7<u gna
3.8<u, r`sp`ctdv`ey. Kotl lgs tl` sgi`
wdatl oh 6.0<u.
Hor IOSH@QS, k`hor` tl` cldp ds k`dnb
ngi`a, “i— iust k` put k`hor` lgna. Hor
dn tlds gctdvdty, cldps gr` ngi`a ―ij`eora’.
Hor SVDC@ syntgx:
―ij`eora va vb bna bna ncl e97<u
w96.0<u’, a`cegr`s ―ij`eora’.
―Xa va bna 7.<’, gssdbns g voetgb` sourc`,
Xa97.<X, on tl` argdn oh ―ij`eora’.
―.edk “5hde`pgtl>hde`ngi`— `ntryngi`’,
edkrgry cgee= hde`pgtl, pgtl to g hde`=
hde`ngi`, ngi` oh g hde` to dnceua` dn tl`
agtg hde`= `ntryngi`, `ntry ngi` hor tl`
s`ctdon oh tl` edkrgry hde` to dnceua`.
―QQ’, NIOS typdcge, VIOS typdcge= tl`
sp``a oh tl` trgnsdstor.
―.ac va 6 7.< 6.67’, p`rhoris AC gngeysds
oh va hroi 6X to 7.<X, sgipednb `v`ry6.67X.
―.prok` d7(ij`eora)’, argwn Das oh
―ij`eora’ hor peottdnb.
―.op’, cgecuegt`s tl` sigee sdbnge ioa`e
pgrgi`t`rs oh g IOS hor g bdv`n
op`rgtdon podnt= dt wdee edst tl` hoeeowdnb
dnhorigtdon: da, vbs, vas, k`tg, bi gna
vtl.
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl slows tlgt gn NIOS lgs Xbs tlgt iust k` br`gt`r tlgt Xtl so tlgt tl` Da cgn
heow (tl` hegt edn` slows tlgt tl` Xbs ada not `xc``a tl` Xtl). Dt lgs g tlr`sloea voetgb` oh
gpproxdigt`ey 137iX gs dt gpp`grs dn tl` ―.eds’ hde` oh tl` sdiuegtdon. Ql` tlr`sloea voetgb` ds
r`gcl`a wl`r` argdn curr`nt `e`vgt`s. Hor Xbs, k`tw``n 6X gna 6.2X, Das ds n`grey z`ro dnadcgtdnb
tlgt `qudvge`nt r`sdstgnc` k`tw``n tl` argdn gna sourc` t`ridnges ds `xtr`i`ey ldbl. Onc` Xbs
r`gcl`s 6.2X, tl` curr`nt dncr`gs`s rgpdaey wdtl Xbs dnadcgtdnb tlgt tl` `qudvge`nt r`sdstgnc` gt
tl` argdn a`cr`gs`s wdtl dncr`gsdnb bgt`-sourc` voetgb`. Gs dt op`rgt`s, Das – Xbs curv` rds`s
qugargtdcgeey, dt occurs dn tl` sgturgtdon r`bdon. Qypdcgeey, Xas ds hdx`a wl`n Das ds peott`a gs
hunctdon oh Xbs.
Qlds ds tl` ―.eds’ hde` oh tl` NIOS tlroubl
tl` sdiuegtdon. Gs procur`a, tl`
coipon`nt ds dn sgturgtdon wdtl Da wldcl
ds `quge to 8.8uG.
|Xtn|
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl slows tlgt g VIOS lgs Xbs tlgt iust k` e`ss tlgt Xtl so tlgt tl` Da cgn heow
(tl` hegt edn` slows tlgt tl` Xbs ada not `xc``a tl` Xtl). Dt lgs g tlr`sloea voetgb` oh
gpproxdigt`ey -3<7iX gs dt gpp`grs dn tl` ―.eds’ hde` oh tl` sdiuegtdon. Ql` VIOS trgnsdstor
dnput clgrgct`rdstdc ds gngeobous to tl` NIOS trgnsdstor `xc`pt Das gna Xbs poegrdtd`s gr`
r`v`rs`a. Xas ds n`bgtdv` gna gpproxdigt`ey -6.7X. Gaadtdongeey, tl` bgt` ds gt g voetgb` eow`rtlgn tl` sourc` t`ridnge voetgb` to gttrgct loe`s to tl` clgnn`e surhgc`.
Qlds ds tl` ―.eds’ hde` oh tl` VIOS tlroubl
tl` sdiuegtdon. Gs oktgdn`a, tl`
coipon`nt ds dn sgturgtdon wdtl Da wldcl
ds gpproxdigt`ey ̀ quge to -8.8uG.
|Xtp|
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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St`p ;:
Adsconn`ct tl` bgt` gna tl` argdn oh tl` IOS. Ql`n, gssdbn tl` adhh`r`nt vgeu`s oh Xbs to
dts bgt` t`ridnge. Sdiuegt` tl` Das – Xbs clgrgct`rdstdc curv`.
Ql`s` gr` tl` SVDC@ coa`s hor kotl NIOS
gna VIOS conn`ctdons. Gs dt ds oks`rv`a,
NIOS gna VIOS lgs e`nbtl oh 76.;4u gna
7.<8u, r`sp`ctdv`ey. Kotl lgs tl` sgi`
wdatl oh 6.0<u.
Hor IOSH@QS, k`hor` tl` cldp ds k`dnb
ngi`a, “i— iust k` put k`hor` lgna. Hor dn
tlds gctdvdty, cldps gr` ngi`a ―ij`eora’.
Hor SVDC@ syntgx:
―ij`eora va vb bna bna ncl e976.;4u
w96.0<u’, a`cegr`s ―ij`eora’.
―Xa va bna 7.<’, gssdbns g voetgb` sourc`,
Xa97.<X, on tl` argdn oh ―ij`eora’.
―Xb Xb bna 7.1’, gssdbn g voetgb` sourc`,
Xb97.1, on tl` bgt` oh ―ij`eora’.
―.edk “5hde`pgtl>hde`ngi`— `ntryngi`’,
edkrgry cgee= hde`pgtl, pgtl to g hde`= hde`ngi`,
ngi` oh g hde` to dnceua` dn tl` agtg hde`=
`ntryngi`, `ntry ngi` hor tl` s`ctdon oh
tl` edkrgry hde` to dnceua`.
―.optdon post prok`’, brgpl noage voetgb`s,
`e`i`nts curr`nts, cdrcudt r`spons`,
geb`krgdc `xpr`ssdons hroi tl` trgnsd`nt
gngeysds, AC sw``ps gna GC gngeysds= dt
`ngke`s oney s`e`ctdv` prokdnb aon` dn
―.prok`’ stgt`i`nts.
―QQ’, NIOS typdcge, VIOS typdcge= tl`
sp``a oh tl` trgnsdstor.
―.get`r’, ds us`a to r`-run tl` sdiuegtdon
wdtl g ioadhd`a n`tedst= l`r`, Xbs ds get`r`a
wdtl clos`n vgeu`s.
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl gkov` adspegys tl` NIOS trgnsdstor output clgrgct`rdstdc peot Das – Xas wdtl
s`v`rge vgeu`s oh Xbs. Ql` edn`gr r`bdon, sgturgtdon r`bdon gna tl` kr`gm-aown gr` geso
adstdnbudsl`a wl`n tl` a`vdc` ds on. Dn tl` edn`gr r`bdon (wl`n Xbs 5 Xas + Xtn), gs tl` argdn
curr`nt dncr`gs`s, Xas dncr`gs`s. Soi`low, tl` IOSH@Q gcts sort oh edm` g r`sdstor. Dn tl`
sgturgtdon r`bdon (Rl`n Xbs > Xas + Xtn), tl` Das edn`s gr` hegt k`cgus` tl` curr`nt ao`s notdncr`gs` gs gny ior` Xas dncr`gs`s. Qo oktgdn tl` sgturgtdon, ds to suppey `noubl voetgb` untde
`v`ntugeey tl` rds` dn tl` curr`nt wdee igm` no adhh`r`nc` to tl` curr`nt. Kr`gm-aown i`gns tl`
dnput voetgb` e`v`e ds ldbl`r tlgn tl` ldbl`st geeowgke` pow`r suppey e`v`e. Rl`n tl` trgnsdstor
ds ohh (Xbs 5 Xtn), Das ds z`ro hor gny Xas vgeu`.
Qlds ds tl` ―.eds’ hde` oh tl` NIOS
trgnsdstor tlroubl tl` sdiuegtdon. Gs g
r`suet, tl` coipon`nt ds dn sgturgtdon
wdtl Da tlgt ds gpproxdigt`ey `quge to
8.8uG.
Xbs97.1X
Xbs97.;X
Xbs96.<X
Kr`gm Aown
Xbs96X
Sgturgtdon [`bdon
Edn`gr [`bdon
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl gkov` slows tl` VIOS trgnsdstor output clgrgct`rdstdc peot Das – Xas wdtl
s`v`rge vgeu`s oh Xbs. Ql` edn`gr r`bdon, sgturgtdon r`bdon gna tl` kr`gm-aown gr` geso
adstdnbudsl`a wl`n tl` a`vdc` ds on. Ql` argdn curr`nt dn sgturgtdon ds vdrtugeey dna`p`na`nt oh
Xas gna tl` trgnsdstor gcs gs curr`nt sourc`. Qlds ds k`cgus` tl`r` ds no cgrrd`r dnv`rsdon gt tl`
argdn r`bdon oh tl` clgnn`e. Cgrrd`rs gr` puee`a dnto tl` ldbl `e`ctrdc hd`ea oh tl`argdn/sukstgnc` pn junctdon gna `j`ct`a out oh tl` argdn t`ridnge. G n`gr constgnt curr`nt ds
ardv`n hroi trgnsdstor no igtt`r tl` argdn-to-sourc` voetgb`. Ql` VIOS trgnsdstor Das v`rsus Xas
curv`s lgs sdidegr slgp` to tlgt dn NIOS, kut tl` voetgb` gna curr`nt poegrdtd`s gr` n`bgtdv` to
gccount hor loe` dnv`rsdon gna argdn curr`nt tlgt `nt`rs tl` trgnsdstor.
Qlds ds tl` ―.eds’ hde` oh tl` VIOS trgnsdstortlroubl tl` sdiuegtdon. Gs procur`a, tl`
coipon`nt ds dn sgturgtdon wdtl Da tlgt ds
`quge to -8.8uG.
Kr`gm Aown
Sgturgtdon [`bdon
Edn`gr [`bdon
Xbs9-7.1X
Xbs9-6.<X
Xbs9-6.<X
Xbs96X
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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St`p 3:
Hoeeow St`p ;, clgnb` tl` clgnn`e e`nbtl. Sdiuegt` tl` Das-Xbs clgrgct`rdstdc curv`.
Ql`s` gr` tl` SVDC@ coa`s hor kotl NIOS
gna VIOS conn`ctdons. Gs dt ds oks`rv`a,
NIOS gna VIOS lgs e`nbtl oh 76.;4u gna
7.<8u, r`sp`ctdv`ey. Kotl lgs tl` sgi`
wdatl oh 6.0<u.
Hor IOSH@QS, k`hor` tl` cldp ds k`dnb
ngi`a, “i— iust k` put k`hor` lgna. Hor dn
tlds gctdvdty, cldps gr` ngi`a ―ij`eora’.
Hor SVDC@ syntgx:
―ij`eora va vb bna bna ncl e976.;4u
w96.0<u’, a`cegr`s ―ij`eora’.
―Xa va bna 7.<’, gssdbns g voetgb` sourc`,
Xa97.<X, on tl` argdn oh ―ij`eora’.
―Xb Xb bna 7.1’, gssdbn g voetgb` sourc`,
Xb97.1, on tl` bgt` oh ―ij`eora’.
―.edk “5hde`pgtl>hde`ngi`— `ntryngi`’,
edkrgry cgee= hde`pgtl, pgtl to g hde`= hde`ngi`,
ngi` oh g hde` to dnceua` dn tl` agtg hde`=
`ntryngi`, `ntry ngi` hor tl` s`ctdon oh
tl` edkrgry hde` to dnceua`.
―QQ’, NIOS typdcge, VIOS typdcge= tl`
sp``a oh tl` trgnsdstor.
―.optdon post prok`’, brgpl noage voetgb`s,
`e`i`nts curr`nts, cdrcudt r`spons`,
geb`krgdc `xpr`ssdons hroi tl` trgnsd`ntgngeysds, AC sw``ps gna GC gngeysds= dt
`ngke`s oney s`e`ctdv` prokdnb aon` dn
―.prok`’ stgt`i`nts.
―.ac va 6 0 6.67’, p`rhoris AC gngeysds oh
va hroi 6X to 0X, sgipednb `v`ry 6.67X.
―.prok` d7(ij`eora)’, argwn Das oh ―ij`eora’
hor peottdnb.
―.get`r’, ds us`a to r`-run tl` sdiuegtdon
wdtl g ioadhd`a n`tedst= l`r`, Xbs ds get`r`a
wdtl clos`n vgeu`s.
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl gkov` slows tl` NIOS trgnsdstor output clgrgct`rdstdc peot Das – Xbs. Ql`
clgnn`e ds s`t to wdatl96.0<u, Xbs97.1, gna clgnb` dn tl` clgnn`e e`nbtl. Gs oks`rv`a, tl`
clgnn`e e`nbtl ioauegtdon ghh`cts tl` curr`nt oh tl` NIOS dn tl` sgturgtdon r`bdon wlde` dts
clgnn`e e`nbtl ds clgnb`a. Ql` giount oh tl` dncr`i`nt cgn k` r̀ auc`a ky dncr`gsdnb tl`
clgnn`e e`nbtl. Dt i`gns tlgt, dh IOSH@Q wdee k` us`a gs g constgnt sourc`, g egrb`r clgnn`ee`nbtl cgn proauc` g curr`nt wldcl ds ior` constgnt gna e`ss s`nsdtdv` to proc`ss vgrdgtdons.
Qlds ds tl` ―.eds’ hde` oh tl` NIOS trgnsdstor
tlroubl tl` sdiuegtdon. Gs gcqudr`a, tl`
coipon`nt ds dn sgturgtdon wdtl Da tlgt ds
`quge to 8.8uG.
E92°
E94°
E91°
E976.;4°
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl gkov` adspegys tl` VIOS trgnsdstor output clgrgct`rdstdc peot D as – Xbs. Ql`
clgnn`e ds s`t to wdatl96.0<u, Xbs9-7.1, gna clgnb` dn tl` clgnn`e e`nbtl. Gs p`rc`dv`a, tl`
clgnn`e e`nbtl ioauegtdon ghh`cts tl` curr`nt oh tl` NIOS dn tl` sgturgtdon r`bdon wlde` dts
clgnn`e e`nbtl ds clgnb`a. Clgnn`e e`nbtl ioauegtdon (or CEI), ds on` oh tl` s`v`rge slort-
clgnn`e `hh`cts dn IOSH@Q scgednb. Dt ds g slort`ndnb oh tl` e`nbtl oh tl` dnv`rt`a clgnn`e r`bdon
wdtl dncr`gs` dn argdn kdgs hor egrb` argdn kdgs`s. Ql` r`suet oh CEI ds gn dncr`gs` dn curr`nt wdtl
argdn kdgs gna g r`auctdon output r`sdstgnc`. Ql` `hh`ct ds pronounc`a tl` slort`r tl` sourc`-
to-argdn s`pgrgtdon, tl` a``p`r tl` argdn junctdon, gna tl` tldcm`r tl` oxda` dnsuegtor.
Qlds ds tl` ―.eds’ hde` oh tl` VIOS trgnsdstor
tlroubl tl` sdiuegtdon. Gs oktgdn`a, tl`coipon`nt ds dn sgturgtdon wdtl Da tlgt ds
gpproxdigt`ey ̀ quge to -8.8uG.
E92°
E91°
E94°
E97.24°
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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St`p 1:
S`t |Xbs| to g vgeu` sigee`r tlgn |Xt| to op`rgt` tl` IOS dn suktlr`sloea r`bdon.
Sdiuegt` tl` Das-Xbs clgrgct`rdstdc curv`.
Ql`s` gr` tl` SVDC@ coa`s hor kotl NIOS
gna VIOS conn`ctdons. Gs dt ds oks`rv`a,
NIOS gna VIOS lgs e`nbtl oh 76.;4u gna
7.<8u, r`sp`ctdv`ey. Kotl lgs tl` sgi`
wdatl oh 6.0<u.
Hor IOSH@QS, k`hor` tl` cldp ds k`dnb
ngi`a, “i— iust k` put k`hor` lgna. Hor
dn tlds gctdvdty, cldps gr` ngi`a ―ij`eora’.
Hor SVDC@ syntgx:
―.edk “5hde`pgtl>hde`ngi`— `ntryngi`’,
edkrgry cgee= hde`pgtl, pgtl to g hde`=
hde`ngi`, ngi` oh g hde` to dnceua` dn tl`
agtg hde`= `ntryngi`, `ntry ngi` hor tl`
s`ctdon oh tl` edkrgry hde` to dnceua`.
―QQ’, NIOS typdcge, VIOS typdcge= tl`
sp``a oh tl` trgnsdstor.
―.optdon post prok`’, brgpl noage voetgb`s,
`e`i`nts curr`nts, cdrcudt r`spons`,
geb`krgdc `xpr`ssdons hroi tl` trgnsd`nt
gngeysds, AC sw``ps gna GC gngeysds= dt
`ngke`s oney s`e`ctdv` prokdnb aon` dn
―.prok`’ stgt`i`nts.
―.ac va 6 0 6.67’, p`rhoris AC gngeysds oh
va hroi 6X to 0X, sgipednb `v`ry 6.67X.
―.prok` d7(ij`eora)’, argwn Das oh
―ij`eora’ hor peottdnb.
―.get`r’, ds us`a to r`-run tl` sdiuegtdon
wdtl g ioadhd`a n`tedst= l`r`, Xbs ds get`r`a
wdtl clos`n vgeu`s.
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl deeustrgt`s tl` Das‑Xbs clgrgct`rdstdc curv`s oh gn NIOS trgnsdstor. Dn tl`
brgauge clgnn`e gpproxdigtdon ioa`ednb oh IOSH@Q t`ridnge clgrgct`rdstdcs, gs dt stgt`a
`gred`r, tlgt tl` argdn curr`nt ds da`ntdcgeey z`ro wl`n tl` bgt` voetgb` ds e`ss tlgn tl` tlr`sloea
voetgb`. Ql` popuegtdon oh iokde` `e`ctrons una`r tl` bgt` provda`s g i`clgndsi hor clgrb`
heow k`tw``n tl` argdn gna sourc` `v`n |Xbs| 5 |Xt|, gna tlus tl`r` ds dn hgct g sigee, non-z`roargdn curr`nt tlroubl g IOSH@Q kdgs`a k`eow tlr`sloea. Qlds ds sdbndhdcgnt k`cgus` on gn
dnt`brgt`a cldp wdtl ideedons oh trgnsdstors wldcl gr` suppos`a to k` ohh gna tl`r`hor` not
adssdpgtdnb gny pow`r, g edtte` curr`nt heowdnb tlroubl `gcl trgnsdstor cgn `gsdey gaa up to k` g
sdbndhdcgnt pow`r argdn, gna k` g sourc` oh l`gtdnb. Hurtl`rior`, IOSH@Q ds op`rgt`a dn
suktlr`sloea r`bdon.
Qlds ds tl` ―.eds’ hde` oh tl` NIOS trgnsdstor
tlroubl tl` sdiuegtdon. Gs g r`suet, tl`
coipon`nt ds cut-ohh wdtl Da wldcl ds
gpproxdigt`ey ̀ quge to 7.08nG.
Xas97.<X Xas97.3X
Xas96.<X
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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Ql` brgpl deeustrgt`s tl` Das‑Xbs clgrgct`rdstdc curv`s oh gn NIOS trgnsdstor. Dt ds not
totgeey corr`ct tlgt wl`n Xbs vgeu` oh g IOSH@Q ds sigee`r tlgn X t, dt wdee turn ohh gna Das wdee k`
`quge to z`ro, gs stgt`a `gred`r. Dn hgct, wl`n Xbs ds sedbltey sigee`r tlgn Xt, tl`r` ds stdee g sigee
curr`nt heowdnb hroi tl` argdn to sourc`, tlus tl` IOSH@Q ds op`rgt`a dn tl` suktlr`sloea
r`bdon. On` tldnb tlgt gee oh tl`s` cdrcudts lgv` dn coiion ds tlgt tl`y op`rgt` dn tl`suktlr`sloea r`bdon oh tl` IOSH@Q. Qlgt ds, tl`y us` tl` IOSH@Q—s clgrgct`rdstdcs wdtl tl`
bgt` kdgs`a k`eow tl` trgnsdstor's tlr`sloea voetgb`. Qlds ds rgr` hor IOSH@Q cdrcudts, dn wldcl
tl` hgct tlgt tl`y lgv` g slgrp trgnsdtdon hroi cutohh to conauctdnb ds tl` iost us`hue oh tl`
trgnsdstor's prop`rtd`s. Low`v`r, suktlr̀ sloea op`rgtdon geso lgs dts k`n`hdts. Dn tlds r`bdon, tl`
curr`nts tlroubl tl` trgnsdstor gr` `xtr`i`ey eow, ora`rs oh igbndtua` eow`r tlgn dn norige
op`rgtdon. Suktlr`sloea cdrcudts consui` `xtr`i`ey sigee giounts oh pow`r, wldcl ds
diportgnt wl`n you gr` trydnb to crgi igny tlousgnas oh tl`s` cdrcudts onto g sdnbe`
dnt`brgt`a cdrcudt.
Qlds ds tl` ―.eds’ hde` oh tl` VIOS trgnsdstor
tlroubl tl` sdiuegtdon. Gs procur`a, tl`
coipon`nt ds cut-ohh wdtl Da wldcl ds
gpproxdigt`ey ̀ quge to -7.71nG.
Xas97.<XXas97.3X
Xas96.<X
7/21/2019 MOSFET Characteristics (ECE126: Laboratory 1)
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WP@SQDONS:
7. Dh w` dncr`gs` R/E oh tl` a`vdc` dn St`p 7, wlgt clgnb`s wdee occur to tl` curv`?
Dncr`gsdnb tl` R/E oh tl` NIOS gna VIOS wdee r`suet to gn dncr`gs` dn tl` curv`—s seop`wdtl r`sp`ct to tl` y-gxds. Qlds ds au` to g a`cr`gs` dn tlr`sloea voetgb`. Ql`r` ds g n``a to
r`auc` tl` tlr`sloea voetgb` dn ora`r to igdntgdn p`rhorignc`. Rl`n dt ds k`dnb r`auc`a, tl`
trgnsdstor cgnnot k` swdtcl`a hroi coipe`t` turn-ohh to coipe`t` turn-on wdtl tl` edidt`a
swdnb gvgdegke`.
;. Rl`n tl` adi`nsdons Rn/En `quge Rp/Ep, ao`s |Dasp|/Dasn `quge °p/°n?
Soeutdon:
(Rn/En 9 Rp/Ep)
usdnb,
DA 97
; λ (Xbs – Xtn); wl`n λ 9° cox
.
DN 97
; λn (Xbs – Xtn);
9
°p
°n
DN
DV 97
; λp (Xbs – Xtn);
9 °p
°n
DN
`qugtdnb tl` ; `qugtdons,
9
°p
°n
3. Rlgt r`egtdonsldp k`tw``n tl` clgnn`e e`nbtl gna tl` seop` oh D as – Xas Clgrgct`rdstdc
Curv` oh NIOS gna VIOS?
Ql` curr`nt dncr`gs`a gs tl` E ds a`cr`gs`a (λp 9°p cox
, DA 9
λ (Xbs – Xtn); ).
1. Rl`n tl` IOSH@Q op`rgt`s dn suk-tlr`sloea r`bdon, wlgt ds tl` r`egtdonsldp k`tw``n
Xbs gna tl` seop` oh tl` Das – Xbs Clgrgct`rdstdc Curv`? Rlgt a`vdc`, `dtl`r VIOS or NIOS, lgs
tl` egrb`r seop`? Rly?
Ql` suk-tlr`sloea r`bdon ds a`t`ridn`a ky tl` voetgb` dn tl` bgt`-sourc` voetgb` gna
tlus proportdonge to tl` curr`nt (tloubl idndige), gna sdnc` NIOS lgs g egrb`r curr`nt tlgn
VIOS, tlgt ds wly tl` NIOS lgs g egrb`r seop` dn tl` D as-X bs curv`.