MOSFET - Farnell element14 · MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

1

IPAN70R450P7S

Rev.2.0,2017-09-15Final Data Sheet

PG-TO220FP

DrainPin 2, Tab

GatePin 1

SourcePin 3

MOSFET700VCoolMOSªP7PowerTransistorCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcostsensitiveapplicationsinconsumermarketssuchascharger,adapter,lighting,TV,etc.ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunctionMOSFET,combinedwithanexcellentprice/performanceratioandstateoftheartease-of-uselevel.Thetechnologymeetshighestefficiencystandardsandsupportshighpowerdensity,enablingcustomersgoingtowardsveryslimdesigns.

Features•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss•Excellentthermalbehavior•IntegratedESDprotectiondiode•Lowswitchinglosses(Eoss)•Qualifiedforstandardgradeapplications

Benefits•Costcompetitivetechnology•Lowertemperature•HighESDruggedness•Enablesefficiencygainsathigherswitchingfrequencies•Enableshighpowerdensitydesignsandsmallformfactors

PotentialapplicationsRecommendedforFlybacktopologiesforexampleusedinChargers,Adapters,LightingApplications,etc.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 700 V

RDS(on),max 0.45 Ω

Qg,typ 13.1 nC

ID,pulse 26 A

Eoss @ 400V 1.4 µJ

V(GS)th,typ 3 V

ESD class (HBM) 2

Type/OrderingCode Package Marking RelatedLinks

IPAN70R450P7S PG-TO 220 FullPAK -Narrow Lead 70S450P7 see Appendix A

2

700VCoolMOSªP7PowerTransistorIPAN70R450P7S


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

10.06.5 A TC = 20°C

TC = 100°C

Pulsed drain current2) ID,pulse - - 25.9 A TC=25°C

Application (Flyback) relevantavalanche current, single pulse3) IAS - - 3.5 A measured with standard leakage

inductance of transformer of 7µH

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V

Gate source voltage VGS-16-30

--

1630 V static;

AC (f>1 Hz)

Power dissipation Ptot - - 22.7 W TC=25°COperating and storage temperature Tj,Tstg -40 - 150 °C -

Continuous diode forward current IS - - 4.7 A TC=25°CDiode pulse current2) IS,pulse - - 25.9 A TC = 25°C

Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°CMaximum diode commutation speed4) dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°CInsulation withstand voltage VISO - - 2500 V Vrms, TC=25°C, t=1min

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction RthJC - - 5.5 °C/W -

Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded

Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s

1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.52) Pulse width tp limited by Tj,max3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

4



3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.12mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=700V,VGS=0V,Tj=25°C

VDS=700V,VGS=0V,Tj=150°C

Gate-source leakage current incl. Zenerdiode IGSS - - 1 µA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.370.84

0.45- Ω VGS=10V,ID=2.3A,Tj=25°C

VGS=10V,ID=2.3A,Tj=150°C

Gate resistance RG - 10 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 424 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 8 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 21 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 251 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 16 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω

Rise time tr - 6.5 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω

Turn-off delay time td(off) - 70 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω

Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 1.9 - nC VDD=400V,ID=1.7A,VGS=0to10VGate to drain charge Qgd - 5.0 - nC VDD=400V,ID=1.7A,VGS=0to10VGate charge total Qg - 13.1 - nC VDD=400V,ID=1.7A,VGS=0to10VGate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=1.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

5



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.6A,Tj=25°CReverse recovery time trr - 200 - ns VR=400V,IF=1.7A,diF/dt=50A/µsReverse recovery charge Qrr - 0.7 - µC VR=400V,IF=1.7A,diF/dt=50A/µsPeak reverse recovery current Irrm - 8 - A VR=400V,IF=1.7A,diF/dt=50A/µs

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

40

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs10 µs

100 µs

1 ms10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-1 10010-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

7



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

20

25

3020 V 10 V 8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

2020 V 10 V 8 V 7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 10 20 300.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.005 V 5.5 V 6 V

6.5 V

7 V10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

98%

typ

RDS(on)=f(Tj);ID=2.3A;VGS=10V

8



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

5

10

15

20

25

30

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 150

1

2

3

4

5

6

7

8

9

10

400 V120 V

VGS=f(Qgate);ID=1.7Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

25 °C125 °C

IF=f(VSD);parameter:Tj

Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175600

620

640

660

680

700

720

740

760

780

800

820

840

VBR(DSS)=f(Tj);ID=1mA

9



Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 700 8000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Eoss=f(VDS)

10



5TestCircuits

Table8Diodecharacteristics

Test circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

11



6PackageOutlines

1

REVISION

04

07.11.2016

ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

DOCUMENT NO.

Z8B00180155

A2

b

D

c

E

e

L

Q

øP

L1

N

D1

A

DIMENSIONS

A1

2.672.47

2.54

15.90

0.46

0.56

10.40

1.70

3.25

3.00

13.45

9.58

3

0.69

0.59

16.10

3.45

3.20

1.90

13.75

10.60

9.78

MILLIMETERS

MIN.

4.60

2.60

MAX.

4.80

2.80

b1 1.01 1.15

5:1

2 3 4

Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm-IndustrialGrade

12



7AppendixA

Table11RelatedLinks

• IFXCoolMOSªP7Webpage:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/p7

13



RevisionHistoryIPAN70R450P7S

Revision:2017-09-15,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-09-15 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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MOSFET - Farnell element14 · MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction