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Presented by- Kawser Ahmed Kajal () Rakibul Hafiz (14-97957-2) Mukit Ahmed Chowdhury (14- 97963-2) A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

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A presentation on the comparative study conducted on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

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  • 1. A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

2. To simulate different characteristics of single gate MOSFET, silicon nanowire MOSFET and carbon nanotube MOSFET using the simulation tool FETToy in nanohub. To compare between the three technologies in terms of- Drain current VS gate voltage relation. Drain current VS drain voltage relation. Mobile charge VS gate voltage relation. Quantum capacitance VS gate voltage relation. 3. Earlier approach Analog switch with 4 terminal MOSFET structure [1] N-type and p-type Gate voltage controls the switching Electrons have mobility 3 times the holes Fig: single gate MOSFET [2] 4. Quantum wire structure Wire diameter= 10^-9 nm Mobility of electrons is controlled by the electrostatic potential applied at gate contact. Field effect operation [3] Ballastic movement of electrons Fig: silicon nanowire MOSFET [2] 5. Advanced technology Graphene role as nanotube Single or an array of tubes as the channel in FET Band gap is directly affected by chirality and diameter. [4] Low power device, faster switching Fig: carbon nanotube MOSFET 6. Single gate MOSFET- gate oxide thickness= 1.5 nm gate insulator dielectric constant=3.9 effective mass ratio=.19 valley degeneracy=2 body thickness=10nm. Silicon nanowire MOSFET- gate insulator dielectric constant=3.9 transport effective mass ratio=.19 valley degeneracy=2 and nanowire diameter=1 nm 7. Carbon nanotube MOSFET- nanotube diameter=1 nm gate insulator thickness=1.5 nm gate insulator dielectric constant=3.9 8. gate control constant = .88 drain control constant = .035 Temperature= 300K Gate voltage= 0 t0 2 volts Drain voltage= 0 to 2 volts Bias points= 12 9. Carbon nanotube MOSFET(lowest, saturates at 1 A) single gate MOSFET silicon nanoribon MOSFET 10. Carbon nanotube MOSFET single gate MOSFET (minimum slope) silicon nanoribon MOSFET (maximum slope) 11. Carbon nanotube MOSFET (lower mobile charge density single gate MOSFET silicon nanoribon MOSFET 12. Carbon nanotube MOSFET(lowest quantum capacitance) single gate MOSFET silicon nanoribon MOSFET 13. characteristics Carbon nanotube MOSFET Silicon nanowire MOSFET Single gate MOSFET ID VS VG low high high IDVS VD Moderate slope Minimum slope Maximum slope Mobile charge density VSVG low high high Quantum capacitane VS VG minimum high high 14. Carbon nanotube MOSFET has moderate slope as found from ID VS VD characteristics. So, it can be used for amplification purpose as well where as other two devices are limited to mostly switching purposes. Cnt MOSFET has low quantum capacitance. So drain voltage has less effect on the performance of the IC that leads to drain control constant value, =.035 which is very close to the ideal case (for ideal case, =0. So, based on the simulated results we can come to the conclusion that carbon nanotube MOSFET is better for nanoelectronic design among the three types of devices considered here . 15. [1] Uhua Cheng, Chenming Hu (1999). "2.1 MOSFET c lassification and operation".MOSFET modeling & BSIM3 user's guide. Springer. p. 13. ISBN 0-7923-8575-6. [2] www.nanohub.org/simulation/FETToy [3] Holmes, Justin D.; Johnston, Keith P.; Doty, R. Christopher and Korgel, Brian A., Control of thickness and orientation of solution-grown silicon nanowires. Science (2000), 287(5457), 1471-1473 [4] Dekker, Cees; Tans, Sander J.; Verschueren, Alwin R. M. ( 1998). "Room-temperature transistor based on a single carbon nanotube", Nature 393 (6680):49.Bibcode:1998Natur.393...49 T. doi:10.1038/29954