MAGNETOELEKTRONIKAprzykłady zastosowań

T. Stobiecki

Katedra Elektroniki AGH

1 wykład 11.X.2004

Magnetoelektronika

• Bio-sensor (G. Reiss, et al. Univ. of Bielefeld)

• Cienka warstwa w bezinwazyjnej chirurgii (K. Ishiyama, et al. Research Institute of Electrical Communication,Tohoku University)

• Nowości - magnetic recording

• Magnetoresistive logic systems

• Nasz udział

Special applications

N

S

Biomolekül

GMR-Schicht

Bindestrang

Increased sensitivity by lock-in technique, uncovered references, layout-Optimization

possible: single molecule detection

Signal prop. Number of Beads

R

H

Vertical magnetic field induces dipol field of bead Detection by GMR / TMRSensor

Special applications : - Bio-Chip

• GMR (Giant MagnetoResistance)• TMR (Tunnel MagnetoResistance) detection of single beads / molecules

Fixed DNA single strand

XMR Sensor

1) Immobilisation of target molecules

Si- SubstrateHaftschicht

Smagnetic bead,

coated with Streptavidin,

binds to a selected molecule

N

3) Hybridisation with beads and detection with XMR sensor

XMR sensor detects stray

field

hybridized DNA

2) Hybridisation of the probe molecules

Biotin

Detection: Magnetoresistive biochip sensor

IEEE Trans. Magn., (2002), ICM’03

Special applications

0°90°

-200 -100 0 100 2000

1

2

3

4

5

6

7

GM

R-A

mp

litu

de

in

%

Feld in Oe

0°90°

CharacteristicDesign

Tunnelelement

Ioben

Iunten

Uoben

Uunten

-50 -40 -30 -20 -10 0 10 20 30 40 500

2

4

6

8

10

12

14

16

18

20

22

TM

R-A

mp

litu

de

in %

Feld in Oe

GMR

TMR

Special applications

77 µV 102 µV 267 µV 284 µV 557 µVSignal

Sensor coverage

1) 5 % 2) 6 % 3) 20 % 4) 23 % 5) 40 %

Ref 1 - Sensor 3

Ref 1 - Ref 2

-150 -100 -50 0 50 100 150

0

50

100

150

200

250

Diff

eren

z-B

rück

ensi

gnal

in µ

V

senkrechtes Feld in Oe0 5 10 15 20 25 30 35 40 45

0

100

200

300

400

500

600

Null -Signal

Diff

eren

z-B

rück

ensi

gnal

in µ

V

Bead-Bedeckung in %

DC-measurements with Bangs 0.8 µm-beads

mit beads

ohne beads

Special applications

DC-measurements with Bangs 0.8 µm-beads

-100 -80 -60 -40 -20 0 20 40 60 80 100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TM

R-A

mpl

itu

de

in %

senkrechtes Feld in Oe

J. Schotter, P.B. Kamp, A. Becker, A. Pühler, D. Brinkmann, W. Schepper, H. Brückl, G. Reiss:A Biochip based on Magnetoresistive Sensors, IEEE Trans. Magnet., 2002

TMR = TMR = TTunneling unneling MMagnetoagnetoRResistanceesistance

5 nmhard magnetic layer

sense layer

MnIr

CoFe

Al2O3

NiFe

DC-measurement, Bangs 0.8 µm Beadsparallel Bias-Field of -6.4 Oe

-100 -80 -60 -40 -20 0 20 40 60 80 100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

TM

R A

mp

litu

de (

%)

perpendicular field (Oe)

~5 % coverage

50 µm

TMR Biochip Sensor:TMR Biochip Sensor:

2x2 µm2 elements

T=300K

T=10K

( ) I IIIj E N E N E T E

Detection: TMR sensor

Advantages of MAGNETIC micro-machine

• Wireless operation

• Simple structure

• Ways to supply energy– F = M (dH/dx)

→ T = M H sin – Magnetostriction

– V = d/dtK.I.Arai, W.Sugawara, K.Ishiyama, T.Honda, M.Yamaguchi, “Fabrication of Small Flying Machines Using Magnetic Thin Films,” IEEE Trans. Mag., vol.31, No.6, pp.3758-3760 (1995).

Flying machine

0 Oe 150 Oe 300 Oe

Bending by DC magnetic field

Rotation by rotating magnetic field

Two principles to move

Lower invasive surgery

What is the challenge to obtain the medical robots? →Wireless energy supply

Spiral-type Magnetic Micro-Machine

Rotational magnetic field

Thrust (swimming direction)

Magnetization

Controlling the swimming direction

STARTSTART

GOALGOAL

STARTSTART

GOALGOAL

Field rotation plane

3D coil-system and controller

Very small machine: 0.3mm

Synchronized swimming of small machine (0.3mm)

Miniaturization of the machine

Tungsten wire : 20mMachine diameter : 0.15mmNdFeB : sputtered

Burrowing Machine Driven by Magnetic Torque

M a g n e t i z a t i o n d i r e c t i o n

7 . 5 m m4 . 0 m m

2 . 0 m m

N d F e B m a g n e t

T i p

Rotational Magnetic Field: 150 Oe, 5 Hz

The machine can burrow into organismal tissue.

Machine

HDD Areal Density Perspective

HDD Areal Density Perspective

Antyferromagnetically coupled AFC media

Heat Assisted Magnetic Recording (HAMR)

Co/Pt multilayers by laser heat treatmnet anisotropy enhancement lower coercivity.

jx

jy

logic input : magnetic field, logic output : voltage / current

clock line

word line

Vout

Special applications: Magnetoresistive logic

„Traditional applications“: Sensors (Car, Automatization) Magnetic Random Access Memory Special : - Magnetoresistive logic: The fundamental logic gate:

Advantage: Field programmable, Logic function can be changed- Reconfigurable computing

Spin logic setup (7 mask e-beam process)

20µm 1mm

Special applications: Magnetoresistive logic

Switching by current lines

0 100 200 300 400 500 600

120

140

160

180

I[a.

u.]

; R

[MO

hm

]

Time [a.u.]

2 ellipses, 0.28µm2, serially connected Hoffset = -60 Oe

TMR: 20% @ 100mV

(1/2 of single ellipse)

Special applications: Magnetoresistive logic

Special applications: Magnetoresistive logic

Masse

Io

Io

Vout

j1j2j3j4

TE4 TE3 TE2 TE1

Steuerleitungen

Lese-leitungen

0 1 2 3 4 5 6 7 8

-12

-8

-4

0

4

8

12

16

20

1 1 1 0 1 0 0 0

SDT 3 SDT4 SDT3 SDT4

"0"

"1"

logic input at (SDT1;SDT2)

-12,9 mV

-5,4 mV-4,6 mV

2,9 mV

-6,6 mV

0,9 mV1,7 mV

9,2 mV

programmed "NOR"programmed "NAND"

(0;0) (0;1) (1;0) (1;1) (0;0) (0;1) (1;0) (1;1)

Vo

ut (

mV

)

-2x 1010

-1x 1010

0

1x 1010

2x 1010

R. Richter, L. Bär, J. Wecker, G. Reiss: Nonvolatile programmable spin-logic for reconfigurable computing, Appl. Phys. Lett., 80 (2002) 1291

Junction TMR Resistance[Ohm]

Hpin ± HC

[Oe]1 47.1 % 308 46.2 ± 2.32 47.1 % 308 46.0 ± 2.33 46.9 % 310 46.1 ± 2.54 47.0 % 310 46.3 ± 2.55 46.8 % 312 46.4 ± 2.5

Special applications: Magnetoresistive logic

Programmed AND : Clocked operation

Nasz udział

http://layer.uci.agh.edu.pl/maglay/podstrony/konfer/