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LHC beam dumping system• 15 deflection generators (MKD) and 10 dilution generators (MKB) per beam• Altogether 800 HV GTO like Thyristors (GTO) and 480 HV triggering IGBTs• Main concern – Single Event Burnout (SEB) of HV semiconductor switches due to High
Energy Hadron (HEH) flux leaking from tunnel to the gallery through cable ducts• SEB on MKD HV semiconductors = asynchronous beam dump (AD) and beam losses
with risk of damage to downstream instruments and machine down-time (reparation)• SEB on MKB = synchronous beam dump (SD) = machine down time
Stack of 10 GTO-like thyristors• ABB - 5STH20H4502• DYNEX - DG648BH45-185• Similar specifications for both:
– Umax: 4.5 kV– Udc: 2.8 kV (100 FIT)– Imax: 80 kA– dI/dt: 20 kA/µs– Load integral ~ 106 A2s– wafer diameter ~ 60 mm
Run1 and actions taken during LS1:extraction generators - MKD
• Run1: E < 4 TeV = reduced voltage on HV switches; no SEB observed• LHC safety request: < 1 AD/y• Internal request < 0.2 AD/y due to SEB on GTO • SEB = destruction of GTO/IGBT = need to replace it: intervention + re-
testing procedure = 6 – 12 h of machine down time• Measurement of SEB cross-section (c-s) of 2 GTO families used (Dynex &
ABB) and of triggering IGBT done in H4IRRAD showed significant difference in GTO SEB c-s at nominal voltage (2.9 kV per GTO at 7 TeV): • ABB SEBc-s: ~ 8e-9 cm2
• Dynex SEBc-s: ~ 5e-7 cm2 – factor of 60 higher!• IXDN75N120 (triggering IGBT @ 1 kV) SEBc-s: ~ 1e-7 cm2
• Replacement of 300 GTO make Dynex by ABB ones in MKD generators: Total of 600 GTO in MKD generators; SEB = AD
• Replacement of 360 triggering HV IGBT 1.2 kV rated by 1.7 kV ones and increase of triggering voltage to 1.17 kV per IGBT; SEB = AD
Run1 and actions taken during LS1:extraction generators - MKD
• Simplified estimation that HEH flux exists only at full beam energy (full GTO voltage)
• Request of 0.2 SEB/y on GTO leads to HEH fluence target value of ~ 5e4 HEH/cm2.y ~ 1/4 of cosmic rays at sea level
• SEB rate of HV IGBT at 5e4 HEH/cm2.y ~ 0.1 SEB/y• Total of 0.3 SEB/y (AD)• Simulations predict maximum fluence in UA area in front of cable duct of
up to 1e6 HEH/cm2.y• Shielding of the most exposed duct (the one close to TCDQ) during Run1
confirmed shielding factor of ~ 10• HEH flux during Run1 is estimated to < 1e5 HEH/cm2.y (measurement with
insufficient accuracy)• Filling of the remaining 2 big cable ducts will be completed in LS1 (UA side)• In case of need – shielding can be added from RA (tunnel) side as well
Run1 and actions taken during LS1:dilution generators - MKB
• Run1: E < 4 TeV = reduced voltage on HV switches; no SEB observed.• Replacement of 120 triggering HV IGBT 1.2 kV rated by 1.7 kV ones (SEB =
SD)• GTO exposed to max voltage of 2.9 kV only in MKBH generators = 80 GTO;
(SEB = SD)• GTO in MKBV (120 x) operates at voltage up to 1.6 kV only; SEB probability
can be neglected• MKBH and MKBV generators remains with Dynex GTO • Filling of 3 big cable ducts will be completed in LS1 (UA side only)
R2E related failure rate estimation
6.5 TeV 7 TeV7 TeV
(without LS1 modifications)
2.7 kV/GTO (MKD + MKBH); 1.5 kV/GTO (MKBV)
2.9 kV/GTO (MKD + MKBH); 1.6 kV/GTO (MKBV)
ABB SEBc-s [cm2] 2e-10 8e-9 8e-9Dynex SEBc-s [cm2] 7e-8 5e-7 5e-7IXGN100N170 SEBc-s [cm2] 5e-9 5e-9 1e-7
IXDN75N120
HEH fluence estimation [HEH.cm-2.y] 5e4 5e4 4e5Failure probability
MKD (GTO) [y-1] 6e-3 0.2 61(60 due to Dynex GTO)
MKD (IGBT) [y-1] 9e-2 9e-2 15MKBH (GTO) [y-1] 0.3 2 16MKB (IGBT) [y-1] 3e-2 3e-2 5Total AD (MKD GTO + IGBT) [y-1] 0.1 0.3 76Total SD (MKB GTO + IGBT) [y-1] 0.35 2.2 21
Prevision of actions for Run3 and HL LHC
• MKD: based on more precise measurements of radiation in UA63/67 during Run2:• Shielding of cable ducts from RA side• Population of the most exposed positions in front of ducts by the generators with the old
production of GTO (GV.xxx series ~ order of magnitude less sensitive to HEH; ~ 6 generators still have them)
• Installing of new trigger transformers (under development) to ensure improved triggering conditions with reduced voltage on triggering IGBTs
• MKB: • Replacement of Dynex GTO by ABB ones • Shielding of ducts from RA side• IGBT SEB rate can be reduced by a factor of 5 by reducing the trigger supply voltage from
3.5 kV to 3.4 kV
Cumulative effects on LBDS
• Dose observed in UA63/67 during Run1 < 0.5mGy/y• HV semiconductors:
• GTO/IGBT tested at H4IRAD with dose up to 10 Gy and cumulated HEH fluencies up to 1e10 HEH/cm2 showed only slight increase of leakage current
• Further tests of the influence of irradiation to switching properties of GTO/IGBTs to be done
• Control electronics:• With all cable ducts shielded the total dose should be low enough to not
expect particular problems• Influence on commercial electronics (HV power supplies):
• To be determined. Multiple failures observed in the past but without clear correlation with beam presence