FOCUS PRODUCT SOLUTIONS

Taiwan SemiconductorOctober 2016

AGENDA

• Introduction to Taiwan Semiconductor• New Product Focus Highlights

o High Voltage Switching Super Junction MOSFET (600 – 900V) High Voltage Planar MOSFET (450 – 1200V)

o Mid Voltage Switching Trench MOSFETs in advanced surface mount packages

o Efficient Power Rectification Bridge Rectifiers Trench Schottky Rectifiers TVS/ESD Protection

• General overview of Standard Products Portfolioo Switching Regulatorso Linear regulatorso Hall Effect Sensor Technologyo Photocouplers

BREA, CA

INDY, IN

HUNTSVILLE, AL

MANCHESTER

PARIS

MUNICH

TOYKOSEOUL

TAIPEI/HQ

TIANJIN

YANGXIN

SHANGHAI

I‐LANLI‐JE

HONG KONGSHENZHEN

SU ZHOU

BALTIMORE, MD

TSC WORLDWIDE ‐ GLOBAL SERVICE SINCE 1979

HEADQUARTERS

BRANCH OFFICES PRODUCTION SITES

TSC Worldwide 4 Production Sites in 2 Countries

Front‐end – 15,000 wafer/month Back‐end – 398kk/month (13 package types)

12 Sales Offices in 7 CountriesClose supply chain for short lead time, short lead time supportGood production planningCommodity device for logistic allocation

RoHS Compliant REACH regulation compliance Conflict Minerals Compliance

Industrial Bosch Danfoss Grundfos GE Rockwell Schneider Siemens

Power Supply & Consumer Bosch Siemens Braun Delta Electronics Dyson Flex Power LG Miele Panasonic Sharp Samsung Sony Whirlpool

Automotive (Behr‐)Hella Continental Delphi Kostal Lear Sumitomo Wabco

Lighting BAG Helvar Osram Panasonic Lighting Philips Lighting Sharp Lighting Tridonic Universal Lighting Vossloh‐Schwabe

APPLICATIONS, SPLIT & REFERENCE CUSTOMERSWorldwide 2016

Power Supply43%

Automotive12%

Lighting17%

Industrial9%

Others10%

Consumer 11%

AC DC

LOAD

BRIDGE RECTIFICATION

POWER FACTOR

CORRECTION

PRIMARYSWITCH AND

POWER REGULATION

SECONDARY POWER

REGULATION

SECONDARY SWITCHING

AC‐DCISOLATED DC‐DC

SWITCH AND POWER

REGULATION

NON‐ISOLATED DC‐DC

POWER STAGE

EFFICIENT POWER SOLUTIONS LINE‐TO‐LOAD

Quality Level:

Field fail rate goal: 0.02 PPM *Field fail rate actual: 0.028 PPM FIT goal: 2.5 /BhrFIT actual: 2.5 /Bhr

Before 200

8Before 200

8

2010 20132011

Continuo

us Im

prov

emen

t

* Field Failure: Automotive Market

2012 2013 2014 2015

Quality Level:

Field failure goal: 0.04 PPM *Field failure actual: 0.02 PPM *FIT goal: 6 /BhrFIT actual: 5.5 /Bhr Quality Level:

Field fail rate goal: 0.035 PPM *Field fail rate actual: 0.02 PPM *FIT goal: 5 /BhrFIT actual: 3.5 /Bhr

Quality Level:

Field fail rate goal: 0.03 PPM *Field fail rate actual: 0.029 PPM *FIT goal: 3 /BhrFIT actual: 2.5 /Bhr

TSC – AUTOMOTIVE QUALITY PERFORMANCE

PRODUCT PORTFOLIO ‐ OVERVIEW

Power Management ICs

• Amplifier & Comparator

• Analog IC• Supervisor and Reset IC

• Voltage and Current Controller

• Hall Effect Sensor• Omni‐Polar

• Unipolar

• Latch

• Linear

• Lighting IC• AC‐DC LED Lighting IC

• DC‐DC LED Lighting IC

• Linear LED Driver*

• Photocouplers

• Linear Voltage Regulator• Standard Linear Voltage Regulator

• Low Dropout Voltage Regulator

• Ultra Low Dropout Voltage Regulator

• Switching Regulator• DC/DC Converter (Integrated Switch)

• DC/DC Controller (External Switch)

• Voltage Reference

• ESD Protection• Diode

• Array

• MOSFET• Super Junction N‐channel

• N‐Channel *

• P‐Channel

• P‐Channel Integrated Schottky

• Complementary

• Thyristor

• DIAC

• Bipolar Transistor• NPN Bipolar Transistor

• PNP Bipolar Transistor

• Complex Digital Transistor

Discrete DevicesDiscrete Power and Switching Devices

• Bridge Rectifier• Standard Bridge*

• Fast Recovery Bridge*

• High Efficiency Recovery Bridge*

• Super Fast Recovery Bridge*

• Schottky Bridge*

• Diode & Rectifier• Switching Diode

• Switching Array

• Standard Rectifier *

• Fast Recovery *

• High Efficient Recovery*

• Ultra Fast Rectifier*

• Super Fast Recovery*

• Schottky Diode*

• Trench Schottky Diode*

• TVS *

• Zener Diode *

• Button/Auto Rectifier

Roadmap Focus

* Automotive AEC‐Q Available

MOSFET PRODUCTS

MOSFET PORTFOLIO

TSC Power MOSFETs support a broad range of power conversion applications

AC‐DC (off‐line)

Power Factor Correction Isolated DC‐DC Load switchingMotor Control

Primary Switch Secondary Switch

POWER

TRA

NSFORM

ER

HV Planar MOSFET500V ~ 600V

Super Junction MOSFET600V

LV Trench MOSFET30V ~ 40V

HV Planar MOSFET450V ~ 1200V MV Trench MOSFET

60V ~ 200VLV 20~40V

30V 1.5m40V 2.2m

Super Junction MOSFET600V ~ 800VMV Trench MOSFET100V ~ 150V

MV 60~150V60V 2.2m100V 8m150V 65m

Topo

logy

Prod

ucts

Application

High Voltage Power MOSFETs• Super Junction (Deep Trench) and Planar• Low RDS(ON)• Good di/dt for faster switching, and lower switching losses• 100% Avalanche tested and rated• Low output capacitance for higher frequency switching

Mid and Low Voltage Trench MOS• Advanced and patented trench technology• Low gate charge for reduced switching losses• Wide range of RDS(ON), VDS ratings, and advanced packages for

versatile application

Through-Hole

TO-220ITO-220TO-262TO251

SMD

D2PAKDPAK

SOT223SOT23SOT26

TSSOP8SO8

PDFN56PDFN56 Dual

PDFN56D Asym.PDFN33

TDFN22 Dual

MOSFET PACKAGES

PDFN3310.9mm2

PDFN5630mm2

PDFN56D Asym.30mm2

PDFN56 Dual30mm2

SO8

SOT23

TSSOP8

D2PAK

DPAK

SOT223SOT26

ITO‐220

TO‐262

TO‐220

TO‐251 TO‐251uS (Short‐Lead IPAK)

TO‐262S (Short‐Lead I2PAK)

PDFN1012Dual 120mm2

Coming Soon

TO‐247

TDFN22 Dual4mm2

TDFN224mm2

PDFN offers highest power density SM footprint

MSL1

NEW PACKAGE PLANNED (2017) ‐ PDFN1012 DUAL

Area: 120mm2

Height: 1.0mm

Min RDS(ON): 1.2mΩ x 2

RθJC = 0.3°C/W

*DTFP ratio: 34%

PDFN1012 • PDFN1012 Dual can replace 2 D2PAK or DPAK• Single Pad version also available that is footprint

compatible with MO‐299 (TO‐LL) Lower thermal resistance Lower package resistance Board space saving

Area: 304mm2

Height: 4.5mm

Min RDS(ON): 1.2mΩ

RθJC = 0.83°C/W

*DTFP ratio: 24%

D2PAK * 2

Area: 131mm2

Height: 2.3mm

Min RDS(ON): 2.7mΩ

RθJC = 1.0°C/W

*DTFP ratio: 14%

DPAK * 2

* DTFP : Die To Foot Print

PDFN1012

DPAK DPAKD2PAK D2PAK

PCB Footprint Requirement+28% +77%

Enhanced Solderability

HV MOSFET – SUPER JUNCTION(600V – 900V)

HIGH VOLTAGE SWITCHING WITH SUPER‐JUNCTION MOSFET

HIGH VOLTAGE N‐CHANNEL SUPER‐JUNCTION MOSFETApplications AC‐DC SMPS Power Factor Correction LLC Primary Side MOSFET Lighting Solar Inverters UPS

Features Fast Switching Low Gate Charge Small Packages Cost Efficient 100% UIS Tested 100% Rg Tested Fast Reverse Recovery

Planar MOSFET Super Junction

75%Improvement

R DS(ON)x Q

g

R DS(ON)x Area

FIGURE

OF MER

IT

ITO‐220

TO‐251 (IPAK)TO‐252 (DPAK)

43% Lower Qg34% Lower Qrr

Drain

Source

Gate

TO‐220

TO‐263 (D2PAK) TO‐247

1st GEN SJ‐MOSFETRSP @ 28 mΩ ∙ cm2

2nd GEN SJ‐MOSFETRSP @ 20 mΩ ∙ cm2

TO‐262 (I2PAK)

SUPER JUNCTION RDS(ON) RANGE

10

100

1000

600V 700V 800V 900V

R DS(ON)

(mΩ)

Package configurations can be readily accommodated within VDS/RDS range constraints

Min

Active PNRDS(ON) Range

Voltage RDS(ON)max

DPAK IPAK ITO/TO-220 D2/I2PAK TO-247

600V

41mΩ TSM60NB041PW75mΩ TSM60NB075CI/CZ TSM60NB075PW99mΩ TSM60NB099CI/CZ TSM60NB099PW

TSM60NB150CI/CZ190mΩ TSM60NB190CI/CZ TSM60NB190CM/CL260mΩ TSM60NB260CI/CZ380mΩ TSM60N(B)380CP TSM60N(B)380CH TSM60N(B)380CI/CZ600mΩ TSM60N(B)600CP TSM60N(B)600CH TSM60N(B)600CI750mΩ TSM60N750CP TSM60N750CH900mΩ TSM60N(B)900CP TSM60N(B)900CH TSM60N(B)900CI1.4Ω TSM60N(B)1R4CP TSM60N(B)1R4CH

650V

41mΩ TSM65NB041PW80mΩ TSM65NB80CI/CZ TSM65NB080PW110mΩ TSM65NB110CI/CZ TSM65NB110PW190mΩ TSM65NB190CI/CZ

700V

260mΩ TSM70NB260CI/CZ TSM70NB260CM/CL380mΩ TSM70N380CP TSM70N380CH TSM70N380CI/CZ600mΩ TSM70N600CP TSM70N600CH TSM70N600CI/CZ750mΩ TSM70N750CP TSM70N750CH900mΩ TSM70N900CP TSM70N900CH TSM70N(B)900CI/CZ1.4Ω TSM70N1R4CP TSM70N1R4CH

800V

90mΩ TSM80N090PW290Ω

400mΩ TSM80N400CI/CZ600mΩ TSM80N600CI/CZ950mΩ TSM80N950CP TSM80N950CH TSM80N950CI/CZ1.2Ω TSM80N1R2CP TSM80N1R2CH TSM80N1R2CI/CZ TSM80N1R2CM/CL

900V130mΩ TSM90N130PW500mΩ TSM90N500CI/CZ TSM90N500CM/CL

SJ‐MOSFET PRODUCT PORTFOLIOReleased Pre‐Release Samples Design

DUAL SUPER JUNCTION MOSFETS

Dual N‐Channel Power MOSFET600V, 33A, 150mΩ

Dual N‐Channel Power MOSFET600V, 29A, 190mΩ

− Coming soon (initial samples mid Q4)

HV MOSFET ‐ PLANAR

PLANAR VS. SUPER JUNCTION

MOSFET Die Size Cost VDSS RDS(ON) VGS(TH) Qg SwitchingSpeed

EMI Avalanche(EAS/IAS)

Reliabilty

HV Planar Bigger Higher Higher Higher Higher Higher Slower Lower Higher Higher

HV Superjunction Smaller Lower Lower Lower Lower Lower Faster Higher Lower Lower

HV PLANAR MOSFET PORTFOLIO

Voltage(VDS max)

RDS(ON) max(mΩ)

ITO-220/220S TO-220 TO-251/251S TO-252 SOT-223 TO-92 SOP-8

450V 4250 TSM1N45CW TSM1N45CT TSM1N45DCS

500V

440 TSM15N50CI TSM15N50CZ480 TSM13N50ACI TSM13N50ACZ850 TSM8N50CH TSM8N50CP1380 TSM5NC50CF1400 TSM6N50CH TSM6N50CP1500 TSM5NB50CI TSM5NC50CP2700 TSM4NC50CP

600V

750 TSM10NB60CI TSM10N60CZ1250 TSM7NC60CF TSM6N60CH TSM6N60CP1600 TSM6NB60CI TSM6NB60CZ2500 TSM4NB60CI TSM4NB60CZ TSM4NB60ECH TSM4NB60CP

4000‐5000 TSM2NB60CH TSM2NB60CP TSM2N60SCW10000 TSM1NB60CH TSM1NB60CP TSM1NB60CW TSM1NB60SCT

650V

900 TSM10NC65CF1350 TSM7NC65CI1450 TSM7N65ACI3370 TSM4NB65CI TSM4NB65CH TSM4NB65CP5000 TSM2NB65CH TSM2NB65CP

700V 900 TSM8N70CI3300 TSM4N70CI TSM4N70CH TSM4N70CP

800V

1050 TSM10N80CI TSM10N80CZ1400 TSM8N80CI TSM8N80CZ3000 TSM4N80CI TSM4N80CZ4200 TSM3N80CI TSM3N80CZ TSM3N80CH TSM3N80CP21600 TSM1N80CW

900V

1400 TSM9N90ECI TSM9N90ECZ1900 TSM7N90CI TSM7N90CZ4000 TSM4N90CI TSM4N90CZ TSM4NB90CH TSM4NB90CP5100 TSM3N90CI TSM3N90CZ TSM3N90CH TSM3N90CP

1000V3700 TSM5N100CI6000 TSM3N100CP8500 TSM2N100CH TSM2N100CP

1200V 5000 TSM2NB120CI9000 TSM1NB120CP

Released Pre‐Release Samples Design

MV MOSFET

MID VOLTAGE TRENCH MOSFET

Proprietary Trench Process for High Power Density Load Switching

Applications Motor Control SMPS Power Stage PWM Load Switching

Features High Power Density Improved VDS and Breakdown

Performance Low RDS(ON) Low Gate Charge High Thermal Conductivity Avalanche Rated 100% UIS and Rg Tested Fast Reverse Recovery Cost Efficient

30/40/60 Vds 700M Cell N-Ch

I-CompanyQgd

Qgs

Qg

Drain

Source

Gate

CGD

CGS

CDS

Rg

PDFN3310.9mm2

PDFN5630mm2

PDFN56 Dual30mm2

D2PAK

DPAKTSM024NA04LCR

Ciss = CGS + CGD

Coss = CDS + CGD

Crss = CGD.

40V, 2.4mΩ, PDFN56

LV‐MV N‐CH TRENCH MOS RDS(ON) RANGE

30V 40V 60V

R DS(ON)(max)

(mΩ)

Package configurations can be readily accommodated within VDS/RDS (die size) range constraints

TSC is motivated, and flexible to provide products specific to SBD requirements

Min

PDFN33

PDFN56PDFN56 Dual

D2PAKDPAK

TDFN22PDFN1012 DualComing Soon

Active PNRDS(ON) Range

BENCHMARK COMPARISONS

ParametersTest Condition

Id = 25A,Vgs = 10V

Id =250uA, Vgs = 0V

Rds(on)(Max) BVdss

mΩ VTSM024NA04LCR 1.88 44.4

I‐Company 1.91 43.2

40V/2~2.5mohm/PDFN56 Benchmark

BVdss Measurement

From measured data, 3% higher BVdss

Avalanche Energy Measurement

ParametersTest Condition

Id = 25A,Vgs = 10V

VDD=30V, RG=25Ω L=0.3mH

Rds(on)(Max)

IAS(MAX) EAS

mΩ A mJTSM024NA04LCR 1.68 76.5 877.8

I‐COmpany 1.91 66.0 653.4

From measured data, 30% higher avalanche energy

5Vin

14Vin

50A(Ton)

TA= 80

Ton

Gate pulse

Inrush Current Simulation

Turn on simultaneously to simulate surge current. ID = 50A, TA=80°C Measure case temperatures

TonQ6 Q7

I‐Company TSM024NA04LCR I‐Company TSM024NA04LCR100ms 96°C 93°C 98°C 94°C200ms 120°C 110°C 124°C 115°C300ms 140°C 125°C 144°C 129°C400ms >150°C 135°C >150°C 139°C

TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO

20V VDSS

Package Part numberRDS(ON) @ 4.5V Max.

(mΩ)

ID Max. (A)

Qg @ 4.5V(nC) VGS(th) Typ. (V)

SOP‐8TSM4806CS 20 28.0 12.3 0.60TSM4424CS 30 8.0 11.2 0.65TSM9926DCS 30 6.0 7.1 0.85

SOT‐23

TSM210N02CX 21 6.7 5.8 0.60TSM250N02CX 25 5.8 7.7 0.60TSM2312CX 33 4.9 11.2 0.65TSM2314CX 33 4.9 11.0 0.85TSM2302CX 65 2.8 5.4 0.95

SOT‐26 TSM3446CX6 33 5.3 8.8 0.87TDFN 2x2 TSM250N02DCQ 25 5.8 7.7 0.60

TSSOP‐8TSM6968DCA 22 6.5 15.0 0.80TSM6968SDCA 22 6.5 15.0 0.80TSM6866SDCA 30 6.0 5.0 0.85

TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO

30V Package Part numberRDS(ON) max

@ 10V(mΩ)

ID max.(A)

Qg @ 4.5V(nC)

VGS(th) Typ.(V)

PDFN33

TSM038N03PQ33 5.5 80 24.0 1.6TSM060N03PQ33 9.0 62 12.9 1.6TSM061NA03CV 8.1 66 9.6 1.9TSM085N03PQ33 13.0 52 7.2 1.6TSM180N03PQ33 28.0 25 4.1 1.6

PDFN56

TSM026NA03CR 3.3 168 21.0 1.7TSM033NA03CR 4.4 129 16.0 1.6TSM036N03PQ56 5.5 124 25.0 1.6TSM045NA03CR 6.3 108 9.0 2.0TSM055N03EPQ56 8.5 80 11.1 1.6TSM055N03PQ56 8.5 80 11.1 1.6TSM061NA03CR 8.0 88 9.3 1.8TSM080N03EPQ56 12.5 55 7.5 1.6TSM080N03PQ56 12.5 73 7.2 1.6TSM088NA03CR 11.4 61 6.3 1.9TSM120NA03CR 14.9 39 4.5 1.9

SOP‐8 TSM042N03CS 6.0 30 24.0 1.6TSM180N03CS 28.0 9 4.1 1.6

SOT‐223 TSM05N03CW 90.0 5

SOT‐23

TSM2306CX 57.0 4 5.5TSM240N03CX 34.0 7 4.1 1.4TSM320N03CX 32.0 5 8.4 0.6TSM3404CX 43.0 6 1.4

SOT‐26 TSM240N03CX6 34.0 7 4.1 1.4

TO‐252 (D‐PAK)

TSM040N03CP 6.0 90 24.0 1.6TSM060N03CP 9.0 70 11.1 1.6TSM060N03ECP 9 70 11.1 1.6TSM090N03CP 13.0 50 7.5 1.6TSM090N03ECP 14.0 50 7.7 1.6TSM500N03CP 80.0 13 7.0 1.7

TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO

60V

40V Package Part number RDS(ON) max @ 10V(mΩ) ID Max. (A) Qg (nC) @ 10V VGS(th) Typ. (V)

PDFN56

TSM020N04LCR 2.0 170 150 1.5

TSM024NA04LCR 2.4 170 67 1.7

TSM033NA04LCR 3.3 141 47 1.7

TSM070NA04LCR 7.0 91 24 1.6SOT‐23 TSM2318CX 45 3.9 10

Package Part number RDS(ON) max @ 10V(mΩ) ID Max. (A) Qg (nC) @ 10V VGS(th) Typ. (V)

ITO‐220 TSM230N06CI 23 28 28 1.8TSM340N06CI 34 19 17 1.7

PDFN56 TSM052N06PQ56 5 92 50 3.0TSM230N06PQ56 23 39 28 1.8

SOP‐8 TSM120N06LCS 12 23 37 1.7TSM4436CS 36 8

SOT‐223 TSM900N06CW 90 5 9 1.8SOT‐23 TSM2308CX 156 3

TSM2N7002KCX 2000 0.3 1.5TSM850N06CX 85 6 9 2.0

TO‐220 TSM100N06CZ 7 100 92 3.0TSM210N06CZ 3 210 160TSM230N06CZ 23 44 28 1.8TSM340N06CZ 34 31 17 1.7

TO‐251 (I‐PAK) TSM170N06CH 17 38 29 1.7TO‐251S (I‐PAK SL) TSM340N06CH 34 25 17 1.7

TSM900N06CH 90 11 9 1.8TO‐252 (D‐PAK) TSM10N06CP 65 10

TSM120N06LCP 12 70 37 1.7TSM170N06CP 17 38 29 1.7TSM230N06CP 23 34 28 1.8TSM340N06CP 34 25 17 1.7TSM60N06CP 7 62 81 3.0TSM900N06CP 90 11 9 1.8

TSC LV‐MV N‐CHANNEL MOSFET PORTFOLIO

75‐250V

VDS (V) Package Part number RDS(ON) @ 10V Max. (mΩ) ID Max. (A) Qg (nC) @ 10V

75 TO‐220TSM190N08CZ 4 190 160TSM80N08CZ 8 80 92

100

PDFN56 TSM120N10PQ56 12 58 145SOT‐223 TSM950N10CW 95 7 9SOT‐23 TSM2328CX 250 2

TO‐220TSM160N10CZ 6 160 154TSM85N10CZ 10 81 154

TO‐251S(I‐PAK SL)

TSM70N10CH 13 70 145TSM900N10CH 90 15 9

TO‐252(D‐PAK)

TSM35N10CP 37 32 34TSM70N10CP 13 70 145TSM900N10CP 90 15 9

150PDFN56 TSM650N15CR 65 24 36SOP‐8 TSM650N15CS 65 9 37

250TO‐251 (I‐PAK) TSM600N25ECH 600 8 8TO‐252 (D‐PAK) TSM600N25ECP 600 8 8

ASYMMETRIC DUAL N‐CHANNEL MOSFETS

Target Market:• Motherboard• Graphic Card• Notebook PC• Server• PoE

Target Application:• CPU_CORE• GPU_CORE• POL

Features:• Integrated HS/LS FETs• Board spec saving• Minimized switching loop• Good EMI• 100% Rg and UIS tested

Part Number Package Q1/ Q2

Vds (V) Vgs (V)

Rds10V (mohm)

max.

Rds4_5V (mohm)

max.

Qg4_5V (nC_typ)

Qgs (nC_typ)

Qgd (nC_typ)

Sample Schedule

MP Schdule Status

TSM5055DCR PDFN56DQ1 30 20 8.0 12 7 2.2 3.3

Q2 '16 Q3 '16 In Dev.Q2 30 20 3.6 5.5 24.0 4.2 13.0

PDFN56D

TSC LV‐MV P‐CHANNEL MOSFET PORTFOLIO

Part Number Configuration Package Vds(V)

VGS(V)

ID(A)

Rds10V(mohm)max.

Rds4_5V(mohm)max.

Qg10V(nC_typ.)

Qg4_5V(nC_typ.)

TSM150P03PQ33 P‐Channel PDFN33 ‐30 ±20 ‐30 15 30 29 14TSM085P03CV P‐Channel PDFN33 ‐30 ±20 ‐64 8.5 13.2 70 35TSM180P03CS P‐Channel SOP‐8 ‐30 ±20 ‐10 18 30 29 14TSM150P04LCS P‐Channel SOP‐8 ‐40 ±20 ‐16 15 21 47 23TSM480P06CP P‐Channel TO‐252 ‐60 ±20 ‐20 48 65 22 11TSM10P06CP P‐Channel TO‐252 ‐60 ±20 ‐10 170 220 6 3TSM680P06CP P‐Channel TO‐252 ‐60 ±20 ‐18 68 110 16 8

RECTIFIERS

RECTIFIER FAMILIES

• Wide range of performance, packaging, and cost options.

RECTIFIER FAMILY PARAMETRIC COMPARISON

Family IF(AVG) VRRM VF TrrMin (A) Max (A) Min (V) Max (V) Min (V) Max (V) Min (ns) Max (ns)

Schottky 1.0 60.0 20 200 0.39 1.05 NA NAUltra Fast 1.0 12.0 50 600 0.88 3.10 13 25Super Fast 1.0 20.0 50 1200 0.95 2.90 35 65High Efficient 1.0 4.0 50 1000 0.95 1.70 50 75Fast 0.5 3.0 50 1000 1.20 1.30 150 500Standard 1.0 6.0 50 1400 1.00 1.30 >500

Efficiency Cost

Std. DiodeSchottkyIF

VFVR

IR With Trench SchottkyTRR Loss in Standard

STANDARD RECTIFIER FAMILIES (SURFACE MOUNT)

PackageAverage Forward Rectified Current (IF(AV)) max.

0.5 A 0.8 A 1 A 1.2A 1.5 A 2 A 3 A 4 A 5 A 6 A 8 A 10 A 12 A 15 A 16 A

Micro SMA x x x

Sub SMA x x x x x

SOD‐123 x

SOD‐123FL x x x

SOD‐123HE x x

SOD‐123W x x x x x

SMAF x x x x x

DO‐214AC(SMA)

x x x x x x x x x

SMBF x

DO‐214AA(SMB)

x x x x x x x x x x x

TO‐277A(SMPC)

x x x x x

DO‐214AB(SMC)

x x x x x x x x x x x x x x

TO‐263AB(D²‐PAK)

x x x x x

Standard Rectifier (TRR >500ns)Fast Rectifier (TRR 150 ‐ 500ns)High Efficiency Rectifier (TRR 50 ‐ 80ns)Super Fast Rectifier (TRR 35 ‐ 65ns)Ultra Fast Rectifier (TRR 15 ‐ 50ns)

TRENCH SCHOTTKY

TRENCH SCHOTTKY FOR EFFICIENT POWER RECTIFICATION

TRENCH SCHOTTKY RECTIFIERS Extremely fast switching Reduced reverse recovery time (TRR). Higher temperature stability 100% avalanche tested and avalanche rated

Lower forward voltage drop (VF) Lower power dissipation (PD) Very low conduction losses

Trench Schottky StructurePlanar Schottky Structure

Std. DiodeSchottkyIF

VFVR

IR

TRENCH SCHOTTKY FOR IMPROVED POWER DENSITY

Standard

Trench Schottky

TRENCH SCHOTTKY RECTIFIERS Extremely fast switching Reduced reverse recovery time (TRR). Higher temperature stability

Lower forward voltage drop (VF) Lower power dissipation (PD) Very low conduction losses

TRENCH SCHOTTKY PRODUCT SPOTLIGHT

Part Series IF(AV) VRRMVF Typ

PackageD²Pak I²Pak ITO‐220 TO‐220 PDFN

5x6SMA SMPC SOD‐

123HE

SOD‐123W

TSSx3U series 3A 45‐60V .4‐.86V

TSSA5 series 5A 50‐150V .4‐.74V

TSx10 series 10A 45‐200V .37‐.84V

TSP15 series 15A 50‐120V .48‐.79V

TSx20 series 20A 45‐300V .43‐.89V

TSx30 series 30A 45‐200V .43‐.86V

TSx40 series 40A 45‐200V .49‐.8V

BRIDGE RECTIFIERS

STANDARD BRIDGE PRODUCTS

IF(avg) VF@IF TRR ABS MBS DBL/DBLS YBS KBP D3K GBL GBU KBJL TS4K TS6P GBPC GBPC‐W

0.8A 1V >500ns 200‐1000V

1A 1V >500ns 200‐1000V 50‐1000V

1.5A 1.1V >500ns 600‐1000V 50‐1400V

2A 1.1V >500ns 1000V 50‐1400V 600‐1000V 400‐1000V 600‐1000V 50‐1000V

3A 1.1V >500ns 600‐1000V 400‐1000V 600‐1000V

4A 1.1V >500ns 400‐1000V 600‐1000V 50‐1000V 50‐1000V 400‐800V

6A 1.1V >500ns 50‐1000V 600‐1000V 400‐800V 50‐1000V

8A 1.1V >500ns 50‐1000V 50‐1000V

10A 1.1V >500ns 50‐1000V 600‐1000V 400‐800V 50‐1000V

15A 1.1V >500ns 600‐800V 50‐1000V 50‐1000V 50‐1000V

20A 1.1V >500ns 50‐1000V

25A 1.1V >500ns 400‐1000V 50‐1000V 50‐1000V 50‐1000V

35A 1.1V >500ns 600‐1000V 50‐1000V 50‐1000V

40A 1.1V >500ns 600‐1000V 50‐1000V

50A >500ns 600‐1000V 50‐1000V

ACVP‐P

VPVRMS

Vrect

Main (VRMS)

VP(VRMS * 1.4 )

VP‐P(VP *2)

120V 170V 340V

240V 340V 680V

480V 672V 1344V

MSL1 SM Packages

LEADLESS SM YBS BRIDGE RECTIFIERSPackage Trend

GBP/D3K

YBS

DBL/DBLS

ABS

MBS

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

SMD type will be a trend for power design

Dimension : 7.3 x 6.6 x 1.4mm Compatible to :

Liteon : MSBL M.C.C: TBS

New design trend Target spec : 2.2A & 3.0A ≤65W Charger/Adapter/PD

FAST/EFFICIENT BRIDGE PRODUCTS

Family IF(avg) Range TRR ABS MBS DBL DBLS TMB TS4B

Fast0.8A 150ns 200V ‐

600V

1.5A ‐ 2A 300 ‐ 500ns 1000V 1000V

High Efficient

1A 50 ‐ 75ns 50V ‐1000V

50V ‐1000V

4A 50ns 400V

Schottky 2 ‐ 3A 40V ‐ 60V

Super Fast1A 35ns 200V ‐

600V

4A 35ns 50V ‐ 200V

TVS PRODUCTS

SMD TYPE TVS PORTFOLIO

Power rating

5.0KW

3.0KW

1.5KW

1.0KW

600W

400W P4SMAxxSMAJxx

SMA6Jxx

SMA

P6SMBJxxSMBJxx

1KSMBxx

SMB

1.5SMCxxSMCJxx

SMDJxx

SMC

TVSPBRxx

SMPC

*5.0SMDJxx

*Under development

Part No. PPK(W) PD(W) IFSM(A) VR(V)

5.0SMDJ xx 5000 6.5 300 10‐100

*SMA1KJxx

Target voltage : 24V, 27V, 30V, 33V, 36V

ESD PROTECTION

Key ESD protection product parameters

1000 300 100 30 20 13 11 5 1 0.25

0.01 0.1 1 10 25 100 500 1000 2500

CJ max (pF)

Zener structure

Zener + Integrated Rail‐to‐Rail clamping diodes

Rail‐to‐Rail clamping diodes

Audio

Video

RS232 RS485 USB2.0

IEEE1394

Ethernet

Speaker u’phone Handset

STB DVD Video I/O

Ser‐port KeyboardMouse

Network HUB Switch

LCDM/TV NB/MB DSC

Network HUB Switch

MB NB Bur‐ray DVD

USB3.0

HDMI

LCDM/TV STB Bur‐ray DVD

CJ : Junction capacitance (pF)

CJ is the intrinsic and unwanted capacitance of the ESD protection device, the higher the signal frequency or data rate, the lower CJ has to be to preserve signal integrity.

5000

Speed: Mbit/sec

10000

0.1

USB3.1 Application circuit

USB Host

USB3.1 Host

USB2.0 Host

RX

TX

+

‐ +

‐

+

‐

+

‐

USB Device

USB3.1 Host

USB2.0 Host

RX

TX

+

‐ +

‐

+

‐

+

‐

SS RX

SS TX

SS TX

SS RX

USB connector

SSTX+

SSTX‐

SSRX+

SSRX‐

D+

D‐

USB connector

SSTX+

SSTX‐

SSRX+

SSRX‐

D+

D‐

Part No. VR(V) IPP(A) CJ(pF) I/O MP

TESDH5V0AP 5 3 0.25 4 E.Q3/16’

Part No. VR(V) IPP(A) CJ(pF) I/O MP

TESDQ5V0SP 5 1 0.2 1 E.Q3/16’

LINEAR AND SWITCHING REGULATORS

LINEAR (LDO) VOLTAGE REGULATORS

Part # Vin

(Max)Iout(A)

Acc.(± %)

VDO

(Max)@ Iout

Adj.Vout

Fixed Output (V) Packages

1.2 1.5 1.8 2.5 3 3.3 5 8 9 12 15 24 DFN22 SOT23 SOT25 SOT89 SOP8 SOT223 DPAK D²PAK TO92 TO220

TS5204 20 0.08 3 0.3 TS5213 20 0.08 3 0.32 TS317 40 0.1 4 2 TS3480 30 0.1 2 0.95 TS78L03 30 0.1 4 2 TS78Lxx 35 0.1 4 2 TS2950 30 0.15 1.5 0.38 TS2951 30 0.15 1.5 0.38 TS4264 45 0.15 2 0.25 TS5205 20 0.15 2 0.17 TS9011 12 0.25 2 0.4 TS9015 7 0.3 2 0.3 TS2937 26 0.5 2 0.6 TS2938 26 0.5 2 0.5 TS78Mxx 35 0.5 2 2 TS9013 12 0.5 2 0.5 TS1117 15 1 2 1.3 TS2940 26 1 2 0.6 TS39104 20 1 2 0.4 TS78xx 35 1 4 2

TO‐220TO‐92D2PAKDPAKSOT223SOP8SOT89SOT23

SOT25DFN22

SELECTION GUIDE

• High efficiency low dropout performance

• Full current rating over temperature range

• Good ripple current rejection

FIXED NEGATIVE VOLTAGE LINEAR REGULATORS • Current limiting, thermal shutdown, and safe‐area compensation making them remarkably

rugged under most operating conditions.

• Compliments TS7800 series positive regulators for matched ± voltage supply

• With adequate heat sinking they can deliver output currents in excess of 1 ampere.

• No external components required• ‐35V Max input voltage

Part number Package Output Current (A)

Output Voltage (V)

TS7905CZ TO‐220 1 5TS7912CZ TO‐220 1 12TS79L05CT TO‐92 1 5TS79L05CY SOT‐89 1 5TS79L09CT TO‐92 1 9TS79M05CP TO‐252 (D‐PAK) 0.5 5TS79M05CZ TO‐220 0.5 5TS79M12CP TO‐252 (D‐PAK) 0.5 12

TO‐220

D‐PAK

TO‐92

APPLICATIONS• Double ended sensors• Audio amplifiers

SWITCHING REGULATORS

Part number Topology PackageSupply Voltage (VCC) Output

Current (ISW) Typ. (A)

Freq.(kHz) Vout (V) Synchronous

RectificationMin. (V) Max. (V)

TS2581CS Buck (Step‐down) SOP‐8 4.5 40 1 100 Adj.TS3410CX5 Buck (Step‐down) SOT‐25 2.5 6 1 1400 Adj. TS34063CS Buck (Step‐down) SOP‐8 3 40 1.5 100 Adj.TS1935BCX5 Boost (Step‐up) SOT‐25 2.7 5.5 1.9 1200 Adj.TS2596SCS Buck (Step‐down) SOP‐8 4.5 24 2 150 Adj.TS2596SCS50 Buck (Step‐down) SOP‐8 4.5 24 2 150 5V FixedTS3420CX6 Buck (Step‐down) SOT‐26 2.8 6 2 1250 Adj. TS3552CS Buck (Step‐down) SOP‐8 4.75 23 2 350 Adj. TS2509CS Buck (Step‐down) SOP‐8 4.5 23 3 500 Adj.TS2596CM5 Buck (Step‐down) TO‐263‐5L (D²‐PAK) 4.5 40 3 150 Adj.TS2596CM533 Buck (Step‐down) TO‐263‐5L (D²‐PAK) 4.5 40 3 150 3V FixedTS2596CM550 Buck (Step‐down) TO‐263‐5L (D²‐PAK) 4.5 40 3 150 5V FixedTS2596CZ5 Buck (Step‐down) TO‐220‐5L 4.5 40 3 150 Adj.TS2596CZ533 Buck (Step‐down) TO‐220‐5L 4.5 40 3 150 3V FixedTS2596CZ550 Buck (Step‐down) TO‐220‐5L 4.5 40 3 150 5V Fixed

• Wide input voltage range

• Synchronous and nonsynchronous PWM converters

• Adjustable current limit

• Short circuit, over temperature, over voltage, undervoltage protection

HALL EFFECT SENSORS SELECTION GUIDE

NON CONTACT SWITCHING AND SENSING WITH HALL EFFECT

SENSOR TYPESLatch

Uni‐Polar

N

S

VOBOP

BRP

N

S

VOBOPBRP

Omni‐PolarN

S

VOBOPN

BRPN

BOPS

BRPS

MAG

MAG

MAG

BLDC Motors Rotary/Linear Interrupt Switch Speed Sensor Position Sensor

TO‐92S

PDFN 2x2SOT‐23

Liquid Level Detector Motion Detector Proximity Switch Micro power ON/OFF Switch

Rotary SwitchSpeed Sensor

Proximity SwitchPosition sensor

Interrupt Switch

TypePart

Number VccOutput Current

Supply Current Max

MagneticOperating Point (BOP)Min/Max(Gauss)

Magnetic Release

Point (BRP)

Min/Max(Gauss)

Package

Bi‐Polar TSH181CT 3.5v – 20v 25mA 8mA 5/90 ‐90/‐5 TO‐92SBi‐Polar TSH188CT 2.5v – 24v 50mA 5mA 5/25 ‐25/‐5 TO‐92SBi‐Polar TSH188CX 2.5v – 24v 50mA 5mA 5/25 ‐25/‐5 SOT‐23Bi‐Polar TSH190CT 4.0v – 30v 25mA 8mA 10/110 ‐110/‐10 TO‐92SBi‐Polar TSH190CX 4.0v – 30v 25mA 8mA 10/110 ‐110/‐10 SOT‐23Uni‐Polar TSH282CT 3.0v – 24v 50mA 5mA 45/100 25/70 TO‐92SUni‐Polar TSH282CX 3.0v – 24v 50mA 5mA 45/100 25/70 TSOT‐23Omni‐Polar TSH248CX 2.5v – 3.5v 2mA 4mA 6/60 5/59 TSOT‐23Omni‐Polar TSH251CT 1.65v‐3.5v 1mA 3mA ‐55/55 ‐10/10 TO‐92SOmni‐Polar TSH251CX 1.65v‐3.5v 1mA 3mA ‐55/55 ‐10/10 TSOT‐23Omni‐Polar TSH253CT 1.8v ‐6.0v 1mA 6mA ‐60/60 5/‐5 TO‐92SOmni‐Polar TSH253CX 1.8v ‐6.0v 1mA 6mA ‐60/60 5/‐5 TSOT‐23Linear TSH481CT 3.0v – 6.5v 10mA 5mA ‐800/800 Sensitivity TO‐92SLinear TSH481CQ 3.0v – 6.5v 10mA 5mA ‐800/800 Sensitivity PDFN2x2

BSAT

LinearN

S

VOH 4V

MAG 2.5V

VOL 1V

BSAT

PHOTOCOUPLERS

Benchmark & Cross reference

Structure and Features Application

TSC’s photocouplers consist of a high‐intensity infrared light‐emitting diode (LED) optically coupled to a photodetector fabricated using the latest process.

Transistor output, DC/AC input.

VDE/UL/CQC/FI

Mainly used on Adapter, Charger, UPS, SMPS (Power) Computer terminals. System appliances, measuring instruments. Registers, copiers, automatic vending machines. Electric home appliances such as fan heaters, etc.

TSC Sharp Lite‐on NEC Toshiba Vishay COSMO

DC input Transistor output

TS816/STS817/S

PC816PC817

LTV‐816LTV‐817

PS2501‐1PS2561‐1

TLP421TLP521 TCET110x K1010

AC input Transistor output TS814/S PC814 LTV‐814 PS2505‐1 TLP626 SFH628A

PHOTOCOUPLER PORTFOLIO

Part number Package Viso(Vrms)

Output VCEO (V)

Output IC (mA)

CTR (Min.)

CTR(Max.)

TPC816A DIP‐4 5000 70 50 80 160TPC816B DIP‐4 5000 70 50 130 260TPC816C DIP‐4 5000 70 50 200 400TPC816D DIP‐4 5000 70 50 300 600TPC816MA DIP‐4M 5000 70 50 80 160TPC816MB DIP‐4M 5000 70 50 130 260TPC816MC DIP‐4M 5000 70 50 200 400TPC816MD DIP‐4M 5000 70 50 300 600TPC816S1A SOP‐4 5000 70 50 80 160TPC816S1B SOP‐4 5000 70 50 130 260TPC816S1C SOP‐4 5000 70 50 200 400TPC816S1D SOP‐4 5000 70 50 300 600TPC817A DIP‐4 5000 80 50 80 160TPC817B DIP‐4 5000 80 50 130 260TPC817C DIP‐4 5000 80 50 200 400TPC817D DIP‐4 5000 80 50 300 600TPC817MA DIP‐4M 5000 80 50 80 160TPC817MB DIP‐4M 5000 80 50 130 260TPC817MC DIP‐4M 5000 80 50 200 400TPC817MD DIP‐4M 5000 80 50 300 600TPC817S1A SOP‐4 5000 80 50 80 160TPC817S1B SOP‐4 5000 80 50 130 260TPC817S1C SOP‐4 5000 80 50 200 400TPC817S1D SOP‐4 5000 80 50 300 600

• Taiwan Semiconductor is focused on discrete power and power management semiconductor products.

• Broad range of new generation semiconductor products brings high efficiency, reliability and technology innovation to a cost competitive market.

Taiwan Semiconductor

Manufacturing

Product Portfolio

Pricing

Quality

TSC America Inc.3040 Saturn Street| Suite 200 |Brea, CA 92821 | USA

Phone: (657) 258‐0800Email: sales@tscus.com

www.taiwansemi.com

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