TM

Enabling Analog IntegrationPaul Kempf

2

InnovationManufactured

Overview

• The New Analog– Analog in New Markets– Opportunity in Integrated Analog/RF– Outsourcing Trends in Analog

• Enabling Functional Integration– Technology Requirements– Requirement for Analog / RF Foundry

3

InnovationManufactured

Digital Integration Drives More Analog Interfaces

ANALOG

DIGITAL

ANALOG

DIGITAL

Analog Modem Analog ModemEthernet (DSL / Cable)

Analog ModemEthernet (DSL / Cable)WLAN 802.11b

Analog ModemEthernet (DSL / Cable)WLAN 802.11a/b/gBluetoothWiMax, UWB …

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InnovationManufactured

Integrated Functions for Added Value

• Limited by available technology• Analog sub-systems have emerged

• CMOS process scaling enable high gate counts for digital SoC

Driver

Mixer

Mixer

PA

PowerControl

Power Management

SwitchFilters

VCO/Synth

Filter

Filter

ADCDAC

DSP

Digital Integration Analog Integration

LNA

OPPORTUNITY

MPU

Memory

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InnovationManufactured

System in a Package (SiP) Progress

DIPSIPSDIPZIP

Through-HoleArea Array

PGA

Through-Hole

SOPSOJTSOPSSOPTSSOP

Quad-LeadedSurface Mount

BGAFBGATBGATFBGA

QFPLQFPTQFP

LeadedSurface Mount

SCSPMCMSiP

Area Array

MCM/SiP

Time

Pin

Cou

nt

Digital Chip (Moore’s Law)

RF/Analog (Analog Integration)

Passives in Package

Custom Discretes Analog Integration

MemoryDigital Integration

Source: Semico

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InnovationManufactured

SiP Growth as the Leading Indicator

0

200

400

600

800

1,000

1,200

1,400

1,600

1,800

2001 2002 2003 2004 2005 2006 2007

Uni

ts a

nd D

olla

rs

$0.00

$0.10

$0.20

$0.30

$0.40

$0.50

$0.60

$0.70

$0.80

ASP

Units

Dollars

ASP

SiP Packaging Sales (Units in Millions, Dollars in Million$US)

Source: Semico

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InnovationManufactured

Outsourcing to Reduce Cost

Source: IC Insights

Advanced Analog/RF(Specialty)

10% 18%

$1B

2%

$4.8B$2.7B

Total Wafer Sales

6% 19% 28%Standard CMOS

1993 2002 2005

$37B $52B $77B

Foundry IDM

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InnovationManufactured

Analog/RF Functions Increasing

• Multi-band ‘world’ phones

• Computing/communications convergence

• Expanding features

• Greater need for integration

Cell Phone Example

Analog/RF functions increasing in multiple consumer, wireless applications

MemoryMemory BasebandProcessorBasebandProcessor

MultimediaProcessor

MultimediaProcessor

Power AmplifierPower Amplifier

WCDMA3G

WCDMA3G

WLANWLAN

GPSGPS

BluetoothBluetooth

TV TunerTV Tuner

CameraSensor

CameraSensor

GSM2.5GGSM2.5G

MixedSignalMixedSignal

SpecialtySilicon

StandardCMOS

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InnovationManufactured

Performance/Cost Optimization

The Advantages of Focusing on Analog/RF Processes

• Smaller size

• Lower cost

• More features

• Predictable performance

Addressing Both Digitaland Analog Scaling

Analog Scaling

0.18µm

0.13µm

0.35µm

0.25µm

Digi

tal S

calin

g

AD

A

D A

D A

AD

A

Jazz SpecialtyStandard CMOS

D A

A

AnalogDigital

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InnovationManufactured

Modular Technology EnablesAnalog Sub-System Integration

2002 20052003 2004

Direct Conversion Radio

Low-Noise SiGe LNAData Converters

Rx M/S

PA

Power AmplifierPower ManagementDigital Control

+ + Functional Scaling+

SiGe BiCMOS6µm Inductor

HV CMOS

V PNPRF LDMOS

SiGe BiCMOS2fF MIM Cap

Power NPNHV CMOS 4fF MIM Cap

6µm Inductor4fF MIM Cap

HV MOS

V PNP

0.35µm 0.25µm 0.18µm 0.13µm

Power NPN

BiCMOSSiGe BiCMOS SiGe

RF CMOSRF CMOS RF CMOS

Tx Rx M/SPA

Tx

PMICPMIC

Rx M/STxRx Tx

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InnovationManufacturedExample: Bipolar Modules

ImprovedPerformance

0

25

50

75

100

125

150

175

200

0.01 0.1 1 10Ic (mA) for Minimum We and Le=1um

Ft (G

Hz)

SiGe 0.35

Si 0.35

SiGe 0.18

Reduced Power Consumption

Analog technology can also provide performance/power consumption advantage

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InnovationManufacturedPower Amplifier Integration in SiGe BiCMOS

Emitter CollectorBase

Collector Implant

10

100

1000

1 3 5 7BVceo (V)

Ft(GHz)

HigherSpeed

Better Power

Efficiency

BetterPower

Efficiency

SBC18

SBC18H2

SBC35

BC35

HigherSpeed

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InnovationManufacturedPower Integration in 0.18µm CMOS

0

5

10

15

20

25

1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Id (A)Ft

(GH

Z)

Vds = 5V

High Performance• Ft 20GHz• Ron < 4 Ohm-mm• BVdss > 15V

Silicide Block

HV Drain

Silicide Block

HV Drain

Pwell P-Substrate

RF LDMOS

N+N+Pwell

STI

Extended Drain MOS

Nwell

Power Management Options• Vgs 1.8 3.3 5 12• Vds 1.8 3.3 5 12 20 40

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InnovationManufactured

Vertical PNP Integration

• Push/Pull Amplifiers

• Hard Disk Drive (HDD) Pre-Amp and Driver ICs

• High-Performance Data Converters

GHzV

5017-7

5015-7

Peak BetaFt (Vce = -5V)BVceo

0.18µm VPNP0.35µm VPNP

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InnovationManufacturedUltra-High Performance:

200GHz SiGe BiCMOS

• 200/200GHz Ft and Fmax• Shallow and Deep Trench Isolation• SiGe epitaxial base (vertical scaling)• Self-aligned emitter integration (lateral scaling)

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InnovationManufactured

0.001

0.01

0.1

1

0.01 0.1 1 10 100

Capacitance (pF)

3 Sig

ma M

ismat

ch (%

)

0.01 0.1 1 10 100

Linear VCC - 40 ppm /VQuadratic VCC 25 ppm/V 2

Performance

Common Centroid

2fF/µm2 MIM Capacitor

Scaling Linear Capacitors

0

5

10

15

20

25

0 3 6 9Capacitance Density (fF/mm2)

Bre

akd

ow

n V

olt

age

(V)

4.5-8 fF/µm2 High K MIM

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InnovationManufactured

Inductor Scaling

Thick metal to improve Q or reduce inductor area

1.E+03

1.E+04

1.E+05

1.E+06

0 2 4 6 8 10

Inductance (nH)

Area(µm2)

3µm Top Metal

6µm Top Metal

Constant Q of 10

Integrated Inductors

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InnovationManufactured

Integrated MEMS

MEMS Circuits• Tunable capacitor• RF Filter• Reconfigurable VCO• RF Switch

Example: Tunable capacitor in VCO design courtesyCarnegie Mellon University

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InnovationManufacturedExample: RF/Analog SoC Products

Single Chip TV Tuner – The World’s First with Integrated Tuner + DeMod

Single Chip WLAN RF Solution – The World’s Most Integrated

Single chip 802.11b/gTransceiver, VCOPA integration

Single chip 802.11a/b/gTransceiver, LNA, VCOPA integration

competing 5-chip solutioncompeting 5-chip solution

competing 3-chip solutioncompeting 3-chip solution

Single chip SoCRF to Baseband ICTuner and DeMod Integration

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InnovationManufacturedAnalog Foundry: Design Support

Higher level of investment in design support required in an Analog Foundry

DigitalDigitalLibrariesLibraries

AMS DesignAMS DesignPlatformPlatform

Digital/MSDigital/MSIPIP

PDKPDKAnalog/RFAnalog/RF

ModelsModels

Analog/RF Analog/RF IPIP

DigitalDigitalFoundryFoundry

AnalogAnalogFoundryFoundry

BackendBackendFA/Test/YieldFA/Test/Yield

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InnovationManufactured

Scalable Models

• Physical scalable models for all devices to ensure accurate simulation

• Design flexibility for optimum performance

GATE

NWELL

NF

NS

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InnovationManufacturedScalable RF Inductor Model

Xsize

Port 1

Port 2

WS

* * * *

*

*

* *

N=4 L0 RviaL3 R3

L1 R1

L2 R2

L4 R4

Substrate

Port 1 Port 2L0 Rvia

L3 R3

L1 R1

L2 R2

L4 R4L0 Rvia

L3 R3

L1 R1

L2 R2

L4 R4

Substrate

Port 1 Port 2

Layout Input RF Circuit Model

Sheet ResistancesDielectric ConstantsLayer Thicknesses

…

Technology Parameters =+

Scalable model enables optimization of inductor area/performance

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InnovationManufacturedStatistical Modeling Infrastructure

Device Parameters(e.g., Idsat, Vth, Beta, Ft)

LNA

Implication of Process Variation → Product Yield

Process Parameters(e.g., Tox, Doping, CD)

pfVCC

Circuit Performance(e.g., Gain, NF)

XX10

2 $$$

Product Performance(Yield, Sales)

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InnovationManufacturedWafer / Lot / Fab Specific Models

Select wafer/lot/series of lots from Web siteTAR file with specific model e-mailed to userUser Un-TARs packagePull-down menu in Design Kit enables Ckt simulation

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InnovationManufacturedEnabling Functional Integration

PurePure--Play FoundryPlay FoundryStreamlined Supply ChainStreamlined Supply ChainSeamless Manufacturing Seamless Manufacturing

Modular silicon technology

Complete design platform

Economies of scale

Analog Foundry

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InnovationManufactured

Jazz Semiconductor

For more information visit:www.jazzsemi.com

or email:info@jazzsemi.com

Thank You