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8/3/2019 Chapter5 BJT AC Analysis
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Chapter 5:
BJT AC Analysis
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
BJT Transistor Modeling
A model is an equivalent circuit that represents the AC
characteristics of the transistor.
A model uses circuit elements that approximate the
behavior of the transistor.
There are two models commonly used in small signal ACanalysis of a transistor:
re model
Hybrid equivalent model
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
The re Transistor Model
BJTs are basically current-controlled devices; therefore the re model
uses a diode and a current source to duplicate the behavior of the
transistor.
One disadvantage to this model is its sensitivity to the DC level. Thismodel is designed for specific circuit conditions.
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
The re Transistor Model
Common-Emitter Configuration
The equivalent circuit of Fig above will be used throughout the
analysis to follow for the common-emitter configuration.
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Common-Emitter Fixed-Bias Configuration
The input is applied to the base
The output is from the collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and
output is 180
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Common-Emitter Fixed-Bias Configuration
AC equivalent
re model
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Common-Emitter Fixed-Bias Calculations
Co 10Rr
e
Cv
e
oC
i
ov
r
RA
r
)r||(R
V
VA
eBCo r10R,10Rri
eBCo
oB
i
oi
A
)r)(RR(r
rR
I
IA
C
iviR
ZAA
Current gain from voltage gain:
Input impedance:
Output impedance:
Voltage gain: Current gain:
eE r10Rei
eBi
rZ
r||RZ
Co
O
R10rCo
Co
RZ
r||RZ
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Common-Emitter Voltage-Divider Bias
re
model requires you to determine , re, and r
o.
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Common-Emitter Voltage-Divider Bias Cal.
Current gain from voltage gain:
Input impedance:
Output impedance:
Voltage gain:
Current gain:
ei
21
r||RZ
R||RR
Co 10RrCo
oCo
RZ
r||RZ
Co 10Rre
C
i
ov
e
oC
i
ov
r
R
V
VA
r
r||R
V
V
A
eCo
Co
r10R,10Rri
oi
10Rrei
oi
eCo
o
i
oi
I
IA
rR
R
I
IA
)rR)(R(r
rR
I
IA
C
iviR
ZAA
8/3/2019 Chapter5 BJT AC Analysis
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Common-Emitter Emitter-Bias Config.
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Impedance Calculations
Eb
Eeb
Eeb
bBi
RZ
)R(rZ
1)R(rZ
Z||RZ
Input impedance:
Output impedance:Co RZ
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Gain Calculations
Current gain from voltage gain:
Voltage gain:
Current gain:
Eb
Eeb
RZE
C
i
ov
)R(rZEe
C
i
ov
b
C
i
ov
R
R
V
VA
Rr
R
V
VA
Z
R
V
VA
bBB
ioi
ZR
R
I
IA
Civi
R
ZAA
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Feedback Pair
This is a two-transistor circuit that operates like aDarlington pair, but it is not a Darlington pair.
It has similar characteristics:
High current gain
Voltage gain near unity Low output impedance
High input impedanceThe difference is that a Darlington
uses a pair of like transistors,whereas the feedback-pair
configuration uses complementary
transistors.
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Copyright 2009 by Pearson Education, Inc.Upper Saddle River, New Jersey 07458 All rights reserved.
Electronic Devices and Circuit Theory, 10/eRobert L. Boylestad and Louis Nashelsky
Current Mirror Circuits
Current mirror circuitsprovide constant current
in integrated circuits.
Example 4.26: Calculate the mirrored current I in the above circuit
given, Rx = 1.1 k and +Vcc = 12 V.