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30.0 kHz-32.0 GHz GaAs MMIC Distributed QFN Packaged Amplifier Page 1 of 9 Features Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. December 2009 - Rev 08-Dec-09 D1008-QH 17 dB Small Signal Gain 24 dBm Saturated Power 3.0 dB Noise Figure Unconditional Stability over Temperature Range 4x4mm Fully Molded Standard QFN Package 100% RF & DC Testing Bias Settings Parameter Drain Current (Id) Drain Voltage (Vd) Gate Bias (Vg1) 1 Gate Bias (Vg3) 2 Units mA V V Ohm Min. 150 4.0 -5.0 GND Typ. - - - - Max. 300 7.0 0.0 Open Mimix Broadband’s 30 kHz – 32 GHz MMIC distributed amplifier has a gain of 17 dB and provides 24 dBm saturated power with 3.0 dB Noise Figure. The device comes in an RoHS compliant 4x4mm QFN surface mount package offering excellent RF and thermal properties. The device’s broad bandwidth operation makes it very versatile for microwave and millimeter applications such as instrumentation, EW and commercial communication systems. General Description Absolute Maximum Ratings Supply Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Input Power (Pin) Abs. Max. Junction/Channel Temp. Max. Operating Junction/Channel Temp. Continuous Power Dissipation (Pdiss) at 85 ºC Thermal Resistance Operating Temperature (Ta) Storage Temperature (Tstg) Mounting Temperature ESD Min - Machine Model (MM) ESD Min - Human Body Model (HBM) MSL Level +10.0V -9.5V < Vg < 0V +17 dBm See MTTF Graph 1 150 ºC 1.6W 40 ºC/W -55 ºC to +85 ºC -65 ºC to 165 ºC See solder reflow profile Class A Class 1A MSL3 (1) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime.

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  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 1 of 9

    Features

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    17 dB Small Signal Gain24 dBm Saturated Power3.0 dB Noise FigureUnconditional Stability over Temperature Range 4x4mm Fully Molded Standard QFN Package 100% RF & DC Testing

    Bias SettingsParameter

    Drain Current (Id)Drain Voltage (Vd)Gate Bias (Vg1)1

    Gate Bias (Vg3)2

    UnitsmA

    VV

    Ohm

    Min.1504.0-5.0

    GND

    Typ.----

    Max.3007.00.0

    Open

    Mimix Broadband’s 30 kHz – 32 GHz MMIC distributed amplifier has a gain of 17 dB and provides 24 dBm saturated power with 3.0 dB Noise Figure. The device comes in an RoHS compliant 4x4mm QFN surface mount package offering excellent RF and thermal properties. The device’s broad bandwidth operation makes it very versatile for microwave and millimeter applications such as instrumentation, EW and commercial communication systems.

    General Description

    Absolute Maximum RatingsSupply Voltage (Vd1,2,3)Gate Bias Voltage (Vg1,2,3)Input Power (Pin)Abs. Max. Junction/Channel Temp.Max. Operating Junction/Channel Temp.Continuous Power Dissipation (Pdiss) at 85 ºC

    Thermal ResistanceOperating Temperature (Ta)Storage Temperature (Tstg)Mounting TemperatureESD Min - Machine Model (MM)ESD Min - Human Body Model (HBM)MSL Level

    +10.0V

    -9.5V < Vg < 0V

    +17 dBm

    See MTTF Graph1

    150 ºC

    1.6W

    40 ºC/W

    -55 ºC to +85 ºC

    -65 ºC to 165 ºC

    See solder reflow profile

    Class A

    Class 1A

    MSL3(1) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime.

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 2 of 9

    Electrical Characteristics for High Power Applications1Vd=7V, Id=200mA, VG3 = OPEN

    Electrical Characteristics for High Gain Applications1Vd=4V, Id=160mA, VG3=GND

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    zHG 0.23 ot 5.62zHG 5.62 ot zHk 0.03egnaR ycneuqerF

    Parameter Units Min Typ Max Min Typ Max Parameter Units Min Typ Max Min Typ Max

    0.50.01Bd )11S( ssoL nruteR tupnI

    0.50.21Bd)22S( ssoL nruteR tuptuO

    0.410.41Bd)12S( niaG langiS llamS

    0.030.03Bd)21S( noitalosI esreveR

    Output Power for 1dB Comp 0.025.22mBd)Bd1P( noisser

    0.220.42mBd)tasP( rewoP tuptuO detarutaS

    0.820.23mBd)mBd4=lcsP( )mBd( 3PI tuptuO

    0.30.3Bd)FN( erugiF esioN

    zHG 0.23 ot 5.62zHG 5.62 ot zHk 03egnaR ycneuqerF

    Parameter Units Min Typ Max Min Typ Max

    0.50.01Bd )11S( ssoL nruteR tupnI

    0.50.21Bd)22S( ssoL nruteR tuptuO

    0.710.71Bd)12S( niaG langiS llamS

    0.030.03Bd)21S( noitalosI esreveR

    Output Power for 1dB Comp 0.410.71mBd)Bd1P( noisser

    0.710.02mBd)tasP( rewoP tuptuO detarutaS

    0.220.92mBd)mBd4=lcsP( )mBd( 3PI tuptuO

    0.30.3Bd)FN( erugiF esioN

    (1) Data measured at ambient temperature of 25 ºC.

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 3 of 9

    Measured Performance

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    XD1008-QH: Input Return Loss, S11 (dB)

    -15

    -10

    -5

    0

    1 1 (d

    B)

    -30

    -25

    -20

    0 5 10 15 20 25 30 35

    Freq (GHz)

    S1

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: Small Signal Gain, S21 (dB)

    10

    15

    20

    25

    2 1 (d

    B)

    0

    5

    10

    0 5 10 15 20 25 30 35

    Freq (GHz)

    S2

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: Output Return Loss, S22 (dB)

    -15

    -10

    -5

    0

    2 (d

    B)

    -30

    -25

    -20

    15

    0 5 10 15 20 25 30 35

    Freq (GHz)

    S22

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V 200mA Vg3 Open 7V 200mA Vg3 GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: Reverse Isolation, S12 (dB)

    -20

    -10

    0

    dB)

    -60

    -50

    -40

    -30

    0 5 10 15 20 25 30 35

    Freq (GHz)

    S12

    (

    4V 160mA Vg3 Open 4V 160mA Vg3 GND4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: Noise Figure (dB) vs Freq (GHz)

    678910

    B)

    0123456

    0 2 4 6 8 10 12 14 16 18 20 22 24 26 28Freq (GHz)

    NF

    (dB

    7V 200mA Vg3 Open 7V 200mA Vg3 GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND4V_160mA_Vg3_Open 4V_160mA_Vg3_GND

    XD1008-QH: Noise Figure (dB) vs Freq (GHz)

    678910

    B)

    0123456

    0 2 4 6 8 10 12 14 16 18 20 22 24 26 28Freq (GHz)

    NF

    (dB

    4V_160mA_Vg3_GND 5V_170mA_Vg3_GND_ _ g _ _ _ g _6V_180mA_Vg3_GND 7V_200mA_Vg3_GND

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 4 of 9

    Measured Performance (cont.)

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    XD1008-QH: Small Signal Gain (dB) vs Freq (GHz)

    101214161820

    in (d

    B)

    02468

    0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

    Freq (GHz)

    Gai

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: Psat (dBm) vs Freq (GHz)

    1820222426

    t (dB

    m)

    10121416

    0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32Freq (GHz)

    Psa

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V 200mA Vg3 Open 7V 200mA Vg3 GND_ 00 _ g3_Ope _ 00 _ g3_G

    XD1008-QH: P1dB (dBm) vs Freq (GHz)

    18

    20

    22

    24

    (dB

    m)

    10

    12

    14

    16

    0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32Freq (GHz)

    P1dB

    (

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: OIP3 (dBm) vs Freq (GHz)

    2629323538

    (dB

    m)

    1417202326

    0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32Freq (GHz)

    OIP

    3 (

    4V_160mA_Vg3_Open 4V_160mA_Vg3_GND7V_200mA_Vg3_Open 7V_200mA_Vg3_GND

    XD1008-QH: Pout vs Pin at 4V 160mA, VG3 Open

    202224

    Bm

    )

    1012141618

    -5 -3 -1 1 3 5 7 9 11 13 15

    Pin (dBm)

    Pout

    (dB

    1 GHz 2 GHz 6 GHz10 GHz 14 GHz 18 GHz

    XD1008-QH: Pout vs Pin at 4V 160mA, VG3 GND

    2022

    24

    Bm

    )

    10

    1214

    16

    18

    -5 -3 -1 1 3 5 7 9 11 13 15

    Pin (dBm)

    Pout

    (dB

    1 GHz 2 GHz 6 GHz10 GHz 14 GHz 18 GHz

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 5 of 9

    Measured Performance (cont.)

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    XD1008-QH: Pout vs Pin at 7V 200mA, VG3 Open

    182022242628

    t (dB

    m)

    1012141618

    -5 -3 -1 1 3 5 7 9 11 13 15

    Pin (dBm)

    Pout

    1 GHz 2 GHz 6 GHz10 GHz 14 GHz 18 GHz

    XD1008-QH: Pout vs Pin at 7V 200mA, VG3 GND

    182022242628

    t (dB

    m)

    1012141618

    -5 -3 -1 1 3 5 7 9 11 13 15

    Pin (dBm)

    Pout

    1 GHz 2 GHz 6 GHz10 GHz 14 GHz 18 GHz

    XD1008-QH: OIP3 vs Pin at 4V 160mA, VG3 Open

    28

    32

    36

    d Bm

    )

    16

    20

    24

    0 4 8 12 16 20 24 28 32

    Pin (dBm)

    OIP

    3 (d

    -10 dBm -8 dBm -6 dBm10 dBm 8 dBm 6 dBm-4 dBm -2 dBm

    XD1008-QH: OIP3 vs Pin at 4V 160mA, VG GND

    28

    32

    36

    Bm

    )

    16

    20

    24

    28

    0 4 8 12 16 20 24 28 32Pin (dBm)

    OIP

    3 (d

    -10 dBm -8 dBm -6 dBm10 dBm 8 dBm 6 dBm-4 dBm -2 dBm

    XD1008-QH: OIP3 vs Pin at 7V 200mA, VG3 Open

    36

    40

    m)

    20

    24

    28

    32

    0 4 8 12 16 20 24 28 32

    Pin (dBm)

    OIP

    3 (d

    B

    -10 dBm -8 dBm -6 dBm-4 dBm -2 dBm

    XD1008-QH: OIP3 vs Pin at 7V 200mA, VG3 GND

    36

    40

    m)

    20

    24

    28

    32

    0 4 8 12 16 20 24 28 32Pin (dBm)

    OIP

    3 (d

    B

    -10 dBm -8 dBm -6 dBm-4 dBm -2 dBm

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 6 of 9

    Physical Dimensions/Layout

    Functional Block Diagram/Pin Designations

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    VG3

    +7 V

    RFIN

    RFOUT

    Bias Tee

    VG1

    Pin Number Pin Name Pin Function Nominal Value

    4 RFin RF

    11 Vg1Gate Bias/Drain Control

    -2.5 V

    16 RFout RF/Vd Bias 4-7 V via Bias TeePower or Gain

    24 Vg3Power or Gain Increase

    OPEN/GND

    3, 5, 15, 17 GND GND GND

    All other pins are N/C and should be connected to GND

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 7 of 9

    MTTF

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    App Note [1] Biasing - As shown in functional schematic, the device is operated by typically biasing the drain with 4.0to 7.0 V and 160 to 200 mA through a bias tee at RFout. The drain current is controlled by the gate bias at VG1 which istypically at -2.5 V for normal operation. It is recommended to use active bias to keep the currents constant in order tomaintain the best performance over temperature. Depending on the supply voltage available and the power dissipatiorconstraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor inseries with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct draincurrent and thus drain voltage. The typical gate voltage needed to do this is -2.5V. Make sure to sequence the appliedvoltage to ensure negative gate bias is available before applying the positive drain supply.

    App Note [2] Bias Arrangement - Each DC pin (Vd and Vg) needs to have DC bypass capacitance (100pF/10nF/1uF) asclose to the package as possible.

    XD1008-QH: MTTF (hours) at Vd=7V, 200mA

    1.0E+091.0E+101.0E+111.0E+121.0E+131.0E+14

    (hou

    rs)

    1.0E+041.0E+051.0E+061.0E+071.0E+081.0E 09

    20 30 40 50 60 70 80 90 100 110 120

    Backplate Temp (oC)

    MTT

    F

    XD1008-QH: Max. Tch (ºC) at Vd=7V, 200mA

    100120140160180200

    el T

    emp.

    (oC

    )

    020406080100

    20 30 40 50 60 70 80 90 100 110 120

    Backplate Temp (oC)

    Max

    . Cha

    nne

    XD1008-QH: Operating Power De-rating Curve

    1.21.41.61.8

    W)

    00.20.40.60.81

    25 50 75 100 125 150

    Pdis

    s ( W

    Backplate Temp (oC)

  • VG3 N/C N/C N/C N/C

    N/CN/C

    tuoFRniFR

    VG1N/C

    30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 8 of 9

    Evaluation Board

    Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

  • 30.0 kHz-32.0 GHz GaAs MMICDistributed QFN Packaged Amplifier

    Page 9 of 9Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

    Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

    their obligation to be compliant with U.S. Export Laws.

    December 2009 - Rev 08-Dec-09 D1008-QH

    Handling and Assembly Information

    Ordering Information

    CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and theenvironment. For safety, observe the following procedures:

    • Do not ingest.• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

    Electrostatic Sensitive Device - Observe all necessary precautions when handling.

    Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices orsystems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Lifesupport devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustainlife, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can bereasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect itssafety or effectiveness.

    Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatiblewith high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place thispart. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and groundconnections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability andlife of the product due to thermal stress.

    Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmentalrequirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliantcomponents are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes aswell as higher temperature (260°C reflow) “Pb Free” processes.

    Part Number for Ordering DescriptionXD1008-QH-0G00 Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantityXD1008-QH-0G0T Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reelXD1008-QH-EV1 XD1008-QH evaluation board

    Typical Reflow Profiles

    Reflow Profile

    Ramp Up Rate

    Activation Time and Temperature

    Time Above Melting Point

    Max Peak Temperature

    Time Within 5 ºC of Peak

    Ramp Down Rate

    SnPb

    3-4 ºC/sec

    60-120 sec @ 140-160 ºC

    60-150 sec

    240 ºC

    10-20 sec

    4-6 ºC/sec

    Pb Free

    3-4 ºC/sec

    60-180 sec @ 170-200 ºC

    60-150 sec

    265 ºC

    10-20 sec

    4-6 ºC/sec

    Ca u t i o n : E S D S e n s i t i veAppropriate precautions in handling, packaging

    and testing devices must be observed.

    Proper ESD procedures should be followed when handling this device.