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3ICC Proprietary TECHNICAL PROPOSAL FOR MEMS DEVICE WLP Chip 1
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ICC Proprietary 1
MEMS DEVICE WAFER LEVEL PACKAGINGTECHNICAL PRESENTATION
Customer Device Wafer
ICC Proprietary 2
Process Modification Required as follows:- Reduction of Bond pads to half of existing bond pads size.
- Since bond pad size has been reduced, the distance between 2 chip isolation lines will be more now and additional scribing / dicing area can be provided for our SWP
Process Flow Changes:New smaller Bond Pads Passivation Bond Pad Opening Testing Ship Wafers to ICC
TECHNICAL PROPOSAL FOR ULTRASOUND MEMS DEVICE WLP
ICC Proprietary 3
TECHNICAL PROPOSAL FOR MEMS DEVICE WLP
Chip 1
Chip 1
ICC Proprietary 4
TECHNICAL PROPOSAL FOR MEMS DEVICE WLP
Chip 1
Chip 1
ICC Proprietary 5
Chip 1
Chip 2
Chip 3
Chip 4
Schematic plan showing a possible EXISTING chip configuration
Active Area
Scribe / Dicing Area
Bond Pads
Isolation line
Bond pad size= 100 micron Sq.
ICC Proprietary 6
Chip 2a
Proposed NEW chip configuration
Bond pad size= half original pad
Active Area
Scribe / Dicing Area
New Bond PadsChip 2a
Chip 2a
ICC Proprietary 7
Proposed NEW chip configuration
Chip 2a
Bond pad size= 50 micron Sq.With 20 micron SqOpening at center.
ICC Proprietary 8
Proposed NEW chip configuration
Chip 2a
Chip 2a
Via fabrication At the scribe zoneVia Size 20um Sq. X 50 um
ICC Proprietary 9
Proposed NEW chip configuration
Chip 2a
Chip 2a
Via passivation PECVD process
ICC Proprietary 10
Proposed NEW chip configuration
Chip 2a
Chip 2a
Interconnection At the scribe zone
ICC Proprietary 11
Proposed NEW chip configuration
Chip 2a
Chip 2a
Top Passivation layer
ICC Proprietary 12
Proposed NEW chip configuration
Chip 2a
Chip 2a
Glass wafer Bonding
ICC Proprietary 13
Proposed NEW chip configuration
Backside of the Wafer after Back grinding and polishing
ICC Proprietary 14
Proposed NEW chip configuration
1st Passivation on backside
ICC Proprietary 15
Proposed NEW chip configuration
Back side pad opening
ICC Proprietary 16
Proposed NEW chip configuration
Routing to new Bump pads
ICC Proprietary 17
Proposed NEW chip configuration
2nd PassivationFilm on bump pads
ICC Proprietary 18
Proposed NEW chip configuration
UBM pads
ICC Proprietary 19
Proposed NEW chip configuration
Solder Bumping
ICC Proprietary 20
Proposed NEW chip configuration
Dicing Process
ICC Proprietary
