09 Design Solar Rooftop

School of Renewable Energy Technology, Naresuan University

Photovoltaic System & Standard Testing Research Division


Tel. & Fax. 055-963180, 055-963182 Website: http://www.sert.nu.ac.th




http://www.sert.nu.ac.th

SCHOOL OF RENEWABLE

ENERGY TECHNOLOGY

ผู้ช่วยศาสตราจารย์ ดร. นิพนธ์ เกตจุ้อย Dr.-Ing. (Renewable Energy Technology)

รองผู้อ านวยการฝ่ายวิจัย หัวหน้าหน่วยวิจัยเทคโนโลยีระบบเซลลแ์สงอาทิตย์และมาตราฐานการทดสอบ วิทยาลัยพลังงานทดแทน มหาวิทยาลัยนเรศวร

การออกแบบ เทคนิคการติดตั้งและการดูแลบ ารงุรักษาระบบโซล่าร์รูฟท็อป

Green Technology for Sustainable Development ณ โรงแรมแอมบาสซาเดอร์ซิตี้ จอมเทียน พัทยา ชลบุร ีวันที่ 22 สิงหาคม 2557








หัวข้อน าเสนอ

เทคโนโลยเีซลล์แสงอาทิตย ์• เทคโนโลยีเซลล์แสงอาทิตย์ • การเลือกใช้งานแผงเซลล์แสงอาทิตย์

การออกแบบระบบโซล่าร์รูฟท็อป • ข้อควรค านึงในการเลือกพื้นที่ติดตั้ง • ความรู้พื้นฐานในการออกแบบ • มาตรฐานที่เกี่ยวข้องกับการออกแบบและข้อควรระวังในการออกแบบ

เทคนิคการติดตั้งและการดูแลบ ารุงรักษา • เทคนิคการติดตั้ง • การดูแลบ ารุงรักษา








เทคโนโลยีเซลล์แสงอาทิตย์








PV cell type

Crystalline silicon

Thin film

Polycrystalline

Monocrystalline

Amorphous

Copper-indium diselenide

(CIS)

Cadmium-telluride (CdTe)

Dye cells

Microcrystalline and

micromorphous

Hybrid HIT cells

ชนิดของเซลลแ์สงอาทติย ์








• Monocrystalline silicon cells

Production: Czochralski process (CZ)

Efficiency: 15%-18%

Form: round, semi-square, square

Size: 100 mm x 100 mm, 125 mm x 125 mm, or diameter 100, 125,

150 mm

Thickness: 0.3 mm

Structure: homogeneous

Colour: dark blue to black (with AR), grey (without AR)

Cell manufacturers: Astro Power, BP Solar, CellSiCo, Eurosolare,

GPV, Helios, Isofoton, RWE Schott Solar, Sharp, Shell Solar, Solartec, Telekom-STV








Characteristic of Mono-crystalline silicon photovoltaic cells

Material: Mono-crystalline silicon

Method of Si Growth: Czochralski process

Structure: P-N junction

Cell forms: Bulk

Thickness: 350 µm

Efficiency(%): 15-24(Bulk)

Produce cell in large area: No

Flexible cell: No for Bulk

Power decrease in initial period: No

Healing ability: No

Radiation resistance: good

Used in high temperature area: Yes less than 200 C

Manufacturing process: A lot of process/complicate

Reliability: Very high

Life time: 20-25 years








Energy used for build cell: Very high

Spectral response: 600-1000 nm

Weight: Heavy for bulk

Temperature Coefficients (Pmax): -0.5%/C

Environment effect: Low

Available in market: Yes

Price: High








Top: Cell structure of

Mono-crystalline

silicon photovoltaic

cell

Bottom: Structure of

Mono-crystalline

silicon








Monocrystalline PV module








• Polycrystalline silicon cells

Production: Ingot casting

Efficiency: 13%-16% (with AR)

Form: square

Size: 100 mm x 100 mm, 125 mm x 125 mm, 150 mm x 150 mm

Thickness: 0.3 mm

Structure: crystals of various orientations are formed during block

casting

Colour: blue (with AR), silver grey (without AR)

Cell manufacturers: BP Solar, Eurosolare, ErSol, GPV, Kyocera,

Photowatt, Q-Cells, RWE Schott Solar, Sharp, Shell Solar, Sunways








Characteristic of Multi-crystalline and polycrystalline

silicon photovoltaic cells

Material: Multi-crystalline/polycrystalline silicon

Method of Si Growth: Various ways


Cell forms: Bulk

Thickness: 350 µm

Efficiency(%): 10-17

Produce cell in large area: No

Flexible cell: No for Bulk cell


Healing ability: No

Radiation resistance: Good

Used in high temperature area: Yes less than 200 C

Manufacturing process: Lass than mono-crystalline

Reliability: High









Energy used for build cell: High


Weight: Heavy for bulk / medium for thin-film

Temperature Coefficients (Pmmp): -0.5%/ C


Available in market: Yes

Price: Medium-pretty high








Top: Cell structure of

Multi-crystalline and

polycrystalline silicon

photovoltaic cell

Bottom: Molecular

structure of Multi-

crystalline and

polycrystalline silicon








• Anti-reflection coating on crystalline silicon cells In order to make sure that as much light as possible enters the cell,

an anti-reflection (AR) layer is applied to it to minimize light reflection

at the surface

AR layer accounts for the blue or dark-blue coloring obtained by the

originally grey crystalline wafer.

AR costing it is possible to obtain different coloring by varying the

thickness of the layer.

Green, gold, brown and purple color can be produce. However, the

enhanced optical impressions is compromised by reduced cell

efficiency.

It is possible to do without AR and to leave the wafers in their original silver-grey.








• Amorphous silicon cells Production: Amorphous (formless) silicon does not form a regular

crystal structure but an irregular network.

Efficiency: 5-8% module efficiency (stabilized condition)

Form: freely selectable

Size: standard module max. 0.77 m x 2.44 m, special module max.

2 m x 3 m

Thickness: 1-3 mm substrate material (non-hardened

glass, plastic, metal) with approx. 0.001 mm

amorphous silicon coating

Structure: homogeneous structure

Colour: red-brown to black

Cell manufacturers: Bangkok Solar, Kaneka, RWE Schott Solar, Sanyo, Solar Cells, Uni-Solar








Characteristic of Amorphous silicon photovoltaic cells

Material: Amorphous silicon

Method of Si Growth: CVD,PCVD, and other ways

Structure: P-I-N single/multi junction

Cell forms: Thin-film

Thickness: A few u m

Efficiency(%): 5-9(single junction)

8-15(multi junction)

Produce cell in large area: Yes

Flexible cell: Yes for flexible substrate

Power decrease in initial period: Yes

Healing ability: No

Radiation resistance: Medium-pretty good

Used in high temperature area: Yes less than150C

Manufacturing process: Many process/complicate

Reliability: Medium-pretty high









Energy used for build cell: Pretty low-medium

Spectral response: 350-700 nm (single junction)

up to design (multi-junction)

Weight: Light-medium



Available in market: Yes (12% market share)

Price: Pretty cheap-medium








Top: Molecular structure of

Amorphous silicon

Bottom: Comparison of

Amorphous silicon molecular

structure and crystalline

silicon molecular structure








Cell structure of Single Junction Amorphous silicon photovoltaic cells








• Copper indium diselenide cells (CIS) Production: The active semiconductor material with CIS solar cells

is copper indium diselenide.

Efficiency: 7.5-9.5% module efficiency


Size: max. 1.20 m x 0.60 m

Thickness: 3 mm substrate material (non-hardened glass) with

0.003 mm coating


Colour: black

Cell manufacturers: Shell Solar, Würth Solar, Global Solar








Characteristic of CIS/CIGS Photovoltaic cells

Material: CdS/CuInSe2, CdS/CuInGsSe2

Method of CIS Growth: CVD, and other ways



Thickness: A few u m/Thin-film

Efficiency(%): 10-18(Thin-film)




Healing ability: No


Used in high temperature area: Yes less than

200 C

Manufacturing process: Many process/complicate

Reliability: High












Temperature Coefficients (Pmmp): -0.36 to-

0.6%/ C

Environment effect: Pretty high-high

Available in market: Yes (< 1 % market share)

Price: Pretty low-medium








Cell structure of CIS/CIGS

Photovoltaic cells

Cell structure of CIS/CIGS

Photovoltaic cells when look

from microscope








• Cadmium telluride cells (CdTe) Production: CdTe solar cells are manufacturer on a glass substrate

with a transparent conductor layer usually indium tin

oxide (ITO) as the front contact.

Efficiency: 6-9% module efficiency


Size: max. 1.20 m x 0.60 m

Thickness: 3 mm substrate material (non-hardened glass) with

0.008 mm coating


Colour: reflective black-green to back

Cell manufacturers: First Solar








Characteristic of CdTe photovoltaic cells

Material: CdS/CdTe

Method of CdTe Growth: CVD, and other ways



Thickness: A few u m/Thin-film

Efficiency(%): 10-15(Thin-film)




Healing ability: No


Used in high temperature area: Yes less

than200 C

Manufacturing process: Many

process/complicate Reliability: High













Environment effect: Pretty high-high

Available in market: Yes (< 1 % market share)

Price: Pretty low-medium








Cell structure of CdTe photovoltaic cells








• Hybrid cells: HIT solar cells Production: HIT solar cell is a combination of a conventional

crystalline and a thin-film solar cell. HIT (Hetero-

junction with Intrinsic Thin layer) refer to the structure of

these hybrid solar cells.

Efficiency: 17.3%

Form: square (chamfered)

Size: max. 104 mm x 104 mm

Thickness: 0.2 mm


Colour: dark blue to almost black

Cell manufacturers: Sanyo








Characteristic of Hybrid silicon photovoltaic cells

Material: Amorphous/crystalline silicon

Method of Si Growth: Combination of crystalline

silicon and amorphous method

Structure: P-I-N / P-N multi junction and P-I-N-I-N for

(HIT) cell

Cell forms: Bulk/Thin-film

Thickness: 200-350 u m/Bulk a few u m/Thin-film

Efficiency(%): 15-25(Amorphous/Single crystalline)

12-20(Amorphous/Multi- crystalline)

10-18(Amorphous/polycrystalline)

8-15(Amorphous/Microcrystalline)

16-22(HIT)

Produce cell in large area: Yes for Thin-film










Cell structure of Hybrid Silicon

Photovoltaic cells

(Amorphous/Single crystalline) and

(Amorphous/Multi- crystalline)

Cell structure of Hybrid Silicon

Photovoltaic cells

(Amorphous/polycrystalline) and

(Amorphous/Microcrystalline)

a-si P-I-N








• Comparison of solar cell types

Solar cell Cell efficiency

(laboratory)

cell

Cell efficiency

(production)

cell

Module efficiency

(series production)

module

Monocrystalline silicon

Polycrystalline silicon Ribbon silicon

Crystalline thin film silicon

Amorphous silicona

Micromorphous silicona

Hybrid HIT solar cell

CIS, CIGS

Cadmium telluride

III-V semiconductor

Dye-sensitized cell

24.7%

19.8%

19.7% 19.2% 13.0% 12.0% 20.1% 18.8% 16.4%

35.8%b

12.0%

18.0%

16.0%

14.0%

9.5% 10.5%

10.7%

17.3% 14.0% 10.0% 27.4% 7.0%

14.0%

13.0%

13.0% 7.9% 7.5% 9.1% 15.2%

10.0%

9.0%

27.0%

5.0%

a in stabilized state b measured with concentrated irradiance c small production runs





PV efficiency & area Module area Rule of thumb: 1kWp approximately 10 m2 PV area

Source: Planning and installing photovoltaic systems








คุณสมบตัขิองแผงเซลลช์นิดต่างๆ (Crystalline silicon) Characteristic (mono c-Si) (multi c-Si) (EFG) (HIT)

1. The figure of PV cells

2. Material mono c-Si multi c-Si multi c-Si c-Si / a-Si

3. Structure P-N P-N P-N P-I-N-I-N

4. Efficiency(%) 15-24 13-18 13-16 17-24

5. Reliability Very high High High High

6. Life time (years) 20-25 20-25 20-25 20-25

7. Energy for cell building Very high high Petty high Petty high

8. Spectral response 500-1100 nm 500-1100 nm 500-1100 nm 350-1100 nm

9. Temp coeff. -0.5 %/˚C 0.5 %/˚C 0.5 %/˚C 0.3 %/˚C

10. Environmental impact Low Low Low Low








Characteristic (a-Si) (a-Si / μc-Si) (CdTe) (CIS/CIGS)

1. The figure of PV cells

2. Material a-Si a-Si / μc-Si CdTe CIS/CIGS

3. Structure P-I-N P-I-N/P-I-N P-N P-N

4. Efficiency(%) 5-7 8-11 8-11 7-11

5. Reliability Medium pretty high Medium Medium

6. Life time (years) 15-20 15-20 15-20 15-20

7. Energy for cell building Pretty low Pretty low Pretty low Pretty low

8. Spectral response 350-700 nm 350-1100 nm 350-800 nm 400-1100 nm

9. Temp coeff. -0.2 %/˚C -0.3 %/˚C -0.25 %/˚C -0.45 %/˚C

10. Environmental impact Low Low pretty high pretty high

คุณสมบตัขิองแผงเซลลช์นิดต่างๆ (Thin film)








เซลลแ์สงอาทติยม์อีายยุาวนานแคไ่หน

แผงเซลล์แสงอาทติยซ์ึ่งตดิตัง้อยู่ทีส่ถานีผลติไฟฟ้าพลงัแสงอาทติย ์บา้นเด่นไมซุ้ง จงัหวดัตาก ของการไฟฟ้าสว่นภมูภิาค ตดิตัง้มาแลว้กวา่ 28 ปี (2529) ปจัจุบนัยงัใชง้านไดอ้ยู ่

แผงเซลลใ์หม ่

แผงเซลลเ์ก่า

สขีองเซลลไ์มไ่ดเ้ปลีย่น แต่เป็นสขีอง EVA





แผงเซลลท์ีแ่ตกจากการกระท าของคน ไมไ่ดเ้กดิจาก การเสือ่มสภาพ หรอืเสยีหายดว้ยเอง





Hot spot เซลลเ์ส่ือมสภาพเน่ืองจากอณุหภมิูเซลลท่ี์สงู

แผงเซลลท่ี์เส่ือมสภาพ มีฟองอากาศภายในแผง สีเซลลเ์ปล่ียนไปจากเดิม

แผงเซลล์แสงอาทติย์ซึ่งตดิตัง้อยู่ที่สถานีผลิตไฟฟ้าพลังแสงอาทิตย์สันก าแพง จังหวัดเชยีงใหม ่ของการไฟฟ้าฝา่ยผลติ ตดิตัง้มาแลว้กวา่ 25 ปี พบวา่เริม่มบีางแผงเริม่เสือ่มสภาพ





แผงเซลลแ์สงอาทติยซ์ึง่ตดิตัง้อยู่ที่ Technical University of Berlin ตดิตัง้ทดสอบมาแลว้กวา่ 25 ปี พบวา่เริม่มบีางแผงเริม่เสือ่มสภาพ

แผงเซลลท์ีเ่สือ่มสภาพเนื่องจากความชืน้ กระจกแตก








การออกแบบระบบโซล่าร์รูฟท็อป








Solar cells and modules IEC 61215 Crystalline silicon terrestrial photovoltaic (PV) modules - Design qualification and type approval IEC 61646 Thin-film terrestrial photovoltaic (PV) modules - Design qualification and type approval IEC 61730-1 Photovoltaic (PV) module safety qualification - Part 1: Requirements for construction. IEC 61730-2 Photovoltaic (PV) module safety qualification - Part 2: Requirements for testing

Standards

PV systems IEC 62446 Grid connected photovoltaic systems - Minimum requirements for system documentation, commissioning tests and inspection IEC 61724 Photovoltaic system performance monitoring - Guidelines for measurement, data exchange and analysis IEC 61727 Photovoltaic (PV) systems - Characteristics of the utility interface IEC 61829 Ed. 1.0 b:1995 Crystalline silicon photovoltaic (PV) array - On-site measurement of I-V characteristics BS EN 61173 Overvoltage protection for photovoltaic (PV) power generating systems

Balance of System IEC 62093 Balance-of-system components for photovoltaic systems - Design qualification natural environments IEC 62109-1 Safety of power converters for use in photovoltaic power systems - Part 1: General requirements IEC 62109-2 Safety of power converters for use in photovoltaic power systems - Part 2: Particular requirements for inverters IEC 61683 Photovoltaic systems - Power conditioners - Procedure for measuring efficiency








Source of photo: KEMREX CO. LTD, location SSD Project

ต าแหน่งที่เหมาะสมในการตดิตั้ง Solar Rooftop

South








Shading





Grid connected PV system design : Inverter sizing Principle for power sizing of inverter

PPV = power from PV generator PinvDC = power of DC inverter Power range: 0.7PPV < PInvDC < 1.2PPV

“Remark: In practical power from PV generator taking into account thermal coefficient loss in PV module its self and resistive loss in wiring. Then the power before inverter input is drop from PV power peak installed”

For low irradiance region: PInvDC < PPV provide higher efficiency For high irradiance region: PInvDC > PPV provide higher efficiency

Source: Planning and installing photovoltaic systems: A guide for installer, architects and engineers

PV generator Inverter

~Public grid





• Low irradiance region (central or northern Europe and northern states in US): PInvDC<PPV provide higher efficiency With this concept the lower power of DC inverter than the PV generator power are choosing because of low irradiance in average. The irradiances above 600 W/m2 occur relatively rarely in Europe. Most of irradiances classes are about 50-600 W/m2 range. In order to make better use of lower irradiance values, it is often sensible to undersize the inverter. The efficiency of inverter increases rapidly to value above 90% when the irradiance increases.

• High irradiance region: PInvDC>PPV provide higher efficiency In high irradiance areas (southern US, Austria, South Africa and Thailand) undersize of the inverter does not give the same increase in energy yield and is not as beneficial. The oversized of inverter, the rate of increase in the low irradiance range is much flatter, good efficiency is attained only with corresponding higher irradiance values.

Grid connected PV system design : Inverter sizing Irradiance classes and different characteristic curves of inverter






Source: SERT

Distribution of solar irradiance in Thailand

0

2

4

6

8

10

12

0-5

0

50-1

00

100-1

50

150-2

00

200-2

50

250-3

00

300-3

50

350-4

00

400-4

50

450-5

00

500-5

50

550-6

00

600-6

50

650-7

00

700-7

50

750-8

00

800-8

50

850-9

00

900-9

50

950-1

,000

1,0

00-1

,050

1,0

50-1

,100

1,1

00-1

,150

1,1

50-1

,200

> 1

,200

Irradiance Classes in W/m2

En

erg

y C

on

ten

t (%

)

0

2

4

6

8

10

12

Fre

qu

en

cy o

f ir

rad

ian

ce (

%)

Energy content frequency

• The distribution of solar irradiance in Thailand refer the data from SERT metrology station measured during 2005 – 2009. • The data confirm that Thailand is high irradiance region. The energy content of irradiance of 350 – 1,000 W/m2 is over 80% of overall energy content of annual solar radiation (energy content during 6.00 – 18.00).

Inverter operation range

Frequency of irradiance occur during day only 12% of irradiance below 50 W/m2. 88% of irradiance is good condition for inverter operation.

Max. eff. Of inverter range 55% of Irr. Frequency 80% of energy content








The maximum voltage should be higher than Voc at -10 °C The MPPT range should be the widest possible and cover Vpm at 70 °C to Vpm at -10 °C

Grid connected PV system design : Inverter sizing Principle for voltage sizing of inverter






ปัจจัยที่ควรค ำนึงถึงในกำรผลิตไฟฟำ้เซลล์แสงอำทิตย์ • ขั้นตอนกำรสร้ำงโรงไฟฟ้ำ (กำรออกแบบ เลือกอุปกรณ์ และติดตั้ง) - ตัวชี้วัดคือผลกำรประเมินสมรรถนะทำงเทคนิคของโรงไฟฟ้ำ (Performance Ratio) • ขั้นตอนกำรเดินโรงไฟฟ้ำ (O&M) - กำรเดินระบบโดยมีกำรดูแล และบ ำรุงรักษำโรงไฟฟ้ำอย่ำงถูกต้อง และสม่ ำเสมอช่วยให้ Performance Ratio ของระบบสูงตลอดเวลำ





สมรรถนะของระบบเซลล์แสงอาทิตย์

อ้ำงอิงจำก IEC 61724: Photovoltaic system performance monitoring - Guidelines for measurement, data exchange and analysis และ International Energy Agency, Implement on Photovoltaic Power Systems operational Performance of PV Systems and Subsystems (IEA PVPS Task 2) ซึ่งได้ก ำหนดให้มีกำรวิเครำะห์ตัวแปรต่ำงๆ ดังต่อไปนี้

การประเมินสมรรถนะทางเทคนิค





ค่าพารามิเตอร์ต่างๆ ที่มีผลต่อการประเมิน • พลังงานไฟฟ้าที่ผลิตได้จากแผงเซลล์แสงอาทิตย์ในทางทฤษฏี (Reference Yield; Yr)

• พลังงานไฟฟ้าที่ผลิตได้จากแผงเซลล์แสงอาทิตย์ (Array Yield; Ya)

• พลังงานไฟฟ้าที่ใช้งานจริงที่ผลิตได้จากแผงเซลล์แสงอาทิตย์ (Final Yield; Yf)

• พลังงานสูญเสียบนแผงเซลล์แสงอาทิตย์ (Capture Losses; Lc)

• พลังงานสูญเสียในระบบเซลล์แสงอาทิตย์ (System Losses; Ls)

• สมรรถนะของระบบเซลล์แสงอาทิตย์ (Performance Ratio; PR)

• ประสิทธิภาพของแผงเซลล์แสงอาทิตย์ (Array Efficiency; ηa )

• ประสิทธิภาพของระบบเซลล์แสงอาทิตย์ (Total Efficiency; ηPV)





PV Array Power Condition

GRID

Yr = Hi/GSTC

Ya = Ea/P0 Lc = Yr-Ya

Ls = Ya-Yf ηa = Ea/Hi·Aa ηPV= EPV/Hi·Aa

Yf = EPV/P0

PR = Yf/Yr

Module Mismatch Losses Incidence effect Module Quality Loss Wiring Ohmic Loss Array Soiling loss

Wiring Ohmic Loss

Inverter Loss during operation (efficiency) Inverter Loss over nominal inv power Inverter Loss due to power threshold Inverter Loss over nominal inv voltage Inverter Loss due to voltage threshold





• Irradiance data: accuracy better than 5 % • Ambient air temperature: accuracy better than 1 K • PV module temperature : accuracy better than 1 K • Voltage and Current: accuracy better than 1 % • Power : accuracy better than 2 % • wind speed: accuracy better than 0.5 m/s for wind speeds ≤ 5 m/s, and better than 10 % for wind speeds greater than 5 m/s

Important Parameter for PV System Evaluation





Performance Ratio data from 170 grid-connected PV systems in IEA country. 35% in range of 0.725 – 0.775

Source: IEA PVPS Task 2








Long term performance study at SERT

Grid connected inverter G-304

a-Si

1

Data logger

p-Si

2

HIT

3

a-Si// µ c-Si

4

Pyranometer

PV array

GT (W/m2)

VDC (V)

IDC (A)

TINV ( C)

VAC(V)

IAC (A)

RTD 100

Grid

Power meter

IDC (A)

IAC(A)

VAC(V), IAC(A), PAC(W), PF

CT





Year A B C

2005 0.88 0.77 0.81

2006 0.79 0.71 0.74

2007 0.81 0.76 0.79

2008 0.75 0.72 0.75

2009 0.81 0.74 0.77

Average 0.88 0.77 0.81

Average Annual Array Performance Ratio (PR)

Source: SERT

Temperature is main influence on array PR





Parameter A B C

Yr (kWh/kWp•d) 5.19 5.19 5.19

YA (kWh/kWp•d) 4.91 4.34 4.61

Yf (kWh/kWp•d) 4.15 3.79 4.00

Lc (kWh/kWp•d) 0.28 0.85 0.58

Ls (kWh/kWp•d) 0.76 0.55 0.61

PR 0.80 0.73 0.77

Average Annual PV System Performance

Source: SERT

5 year average data





Long term array yield (Ya) monitoring of different PV technology

Source: SERT

0

20

40

60

80

100

120

140

160

180

200

Jul 0

5

Sep

05

Nov 0

5

Feb

06

Apr 0

6

Jun

06

Aug

06

Oct 0

6

Dec 0

6

Feb

07

Apr 0

7

Jun

07

Aug

07

Oct 0

7

Dec 0

7

Feb

08

Apr 0

8

Aug

08

Oct 0

8

Dec 0

8

Mar 0

9

May 0

9

Aug

09

Oct 0

9

Dec 0

9

Radi

atio

n - M

onth

(kW

h/m

2 • m)

0

20

40

60

80

100

120

140

160

180

200

YA

(kW

h/kW

p • m

)

YA(a-Si) YA (p-Si) YA (HIT) Radiation

A B C





0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Average

.

So

lar

rad

iati

on

(k

Wh

/m2d

ay

)

2002 2003 2004 2005 2006 2007 2008

Monthly average of daily horizontal solar radiation at Loburi

• On a yearly average basis 2002 solar radiation data is lower at 4.89 kWh/m2.day • Maximum data are in 2003 and 2008 at 5.19 kWh/m2.day • Average solar radiation data during 2002 – 2008 is 5.07 kWh/m2.day

Different of solar radiation in each year depending on climate condition Source: DEDE





Month 2002 2003 2004 2005 2006 2007 2008

Jan -3.48 4.73 -7.95 0.60 5.07 -2.23 3.26

Feb -6.97 -3.14 2.85 5.78 -1.22 3.81 -1.11

Mar -7.95 -1.97 1.80 -2.07 4.81 -0.96 6.33

Apr -4.27 6.17 -1.69 -4.22 2.50 -3.55 5.07

May -2.69 3.94 1.87 0.52 -1.21 -3.46 1.03

Jun 4.43 -2.33 -11.70 -5.06 4.91 6.57 3.19

Jul -10.43 5.24 0.89 -3.92 -3.04 4.36 6.90

Aug -11.15 7.57 2.22 -5.29 -3.51 -0.31 10.47

Sep -6.49 -3.51 3.48 -3.93 3.46 5.66 1.32

Oct 5.08 3.22 -2.90 3.33 6.10 -13.30 -1.53

Nov 5.56 7.83 -2.53 -3.30 -2.54 -2.48 -2.54

Dec -2.00 2.17 -0.33 1.18 -0.32 2.23 -2.93

Ave -3.39 2.48 -1.18 -1.38 1.30 -0.36 2.52

Percent difference compare with the average data during 7 year data

Difference of horizontal solar radiation during at Loburi Month 2002 2003 2004 2005 2006 2007 2008 Ave

Jan 4.74 5.14 4.52 4.94 5.16 4.80 5.07 4.91

Feb 4.73 4.92 5.22 5.37 5.02 5.27 5.02 5.08

Mar 5.05 5.38 5.58 5.37 5.75 5.43 5.83 5.49

Apr 5.58 6.19 5.73 5.58 5.98 5.62 6.13 5.83

May 5.30 5.66 5.55 5.47 5.38 5.26 5.50 5.44

Jun 5.41 5.06 4.58 4.92 5.44 5.52 5.35 5.18

Jul 4.51 5.30 5.08 4.84 4.88 5.25 5.38 5.03

Aug 4.17 5.04 4.79 4.44 4.53 4.68 5.18 4.69

Sep 4.36 4.50 4.83 4.48 4.83 4.93 4.73 4.66

Oct 5.16 5.07 4.77 5.08 5.21 4.26 4.84 4.91

Nov 5.03 5.14 4.65 4.61 4.65 4.65 4.65 4.77

Dec 4.70 4.90 4.78 4.86 4.78 4.91 4.66 4.80

Ave 4.89 5.19 5.01 5.00 5.13 5.05 5.19 5.07

Monthly average of daily solar radiation - Lower than 7 year average value + Higher than 7 year average value

Source: DEDE





2002 2003 2004 2005 2006 2007 2008 Average

Yr [kWh/kW.a] 1787 1895 1827 1824 1873 1842 1896 1849

Yf (PR 0.80) [kWh/kW.a] 1429 1516 1462 1459 1499 1474 1517 1479

Yf (PR 0.75) [kWh/kW.a] 1340 1421 1371 1368 1405 1382 1422 1387

Yf (PR 0.70) [kWh/kW.a] 1251 1327 1279 1277 1311 1290 1327 1294

Influence of Performance Ratio (PR) on Final Energy Yield (Yf)

PR: 0.80 vs 0.75 ---> 6.25% diff. Yf PR: 0.80 vs 0.70 ---> 12.50% diff. Yf








เทคนิคการติดตั้งและการดูแลบ ารุงรักษา








PV module roof installation








Mounting Technique

Source: Lock Solar Company








Mounting Technique

Source: Lock Solar Company








รูปแบบกำรติดตั้งระบบผลิตไฟฟ้ำด้วยเซลล์แสงอำทิตย์บนหลังคำ








• Recommendation on PV module installation

1. Module weight (load)

2. Module orientation

3. Distance between each staring

4. Earth ground protection

• Recommendation on Inverter installation

1. Installation location: avoid rain, humidity

2. Installation under shade avoid from the radiation

3. Good ventilation

4. Installation insect protection equipment








1. Mounting inspection

2. Connection, junction box inspection

3. Shading on PV module inspection, dust & bird drop

removal

• PV module maintenance

• Inverter maintenance

1. Connection inspection

2. Observe the indication display

3. Insect nest removal








Dust effect on PV energy loss

ฝุ่นสะสมบนแผงเซลล์แสงอำทิตย์






Source: SERT

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

3/1

1:6

3/1

1:8

3/1

1:1

1

3/1

1:1

3

3/1

1:1

6

3/1

2:6

3/1

2:9

3/1

2:1

1

3/1

2:1

3

3/1

2:1

6

3/1

3:6

3/1

3:9

3/1

3:1

1

3/1

3:1

4

3/1

3:1

6

3/1

4:7

3/1

4:9

3/1

4:1

1

3/1

4:1

4

3/1

4:1

6

3/1

5:7

3/1

5:9

3/1

5:1

2

3/1

5:1

4

3/1

5:1

6

3/1

6:7

3/1

6:1

0

3/1

6:1

2

3/1

6:1

4

3/1

6:1

7

3/1

7:8

3/1

7:1

0

3/1

7:1

2

3/1

7:1

5

3/1

7:1

7

3/1

8:8

3/1

8:1

0

3/1

8:1

3

3/1

8:1

5

3/1

8:1

8

3/1

9:8

3/1

9:1

1

3/1

9:1

3

3/1

9:1

5

3/2

0:6

3/2

0:8

3/2

0:1

1

3/2

0:1

3

3/2

0:1

6

3/2

1:6

3/2

1:9

3/2

1:1

1

3/2

1:1

3

3/2

1:1

6

3/2

2:6

3/2

2:9

3/2

2:1

1

3/2

2:1

3

3/2

2:1

6

3/2

3:6

3/2

3:9

3/2

3:1

1

3/2

3:1

4

3/2

3:1

6

3/2

4:6

3/2

4:9

3/2

4:1

1

3/2

4:1

4

3/2

4:1

6

Date / Time

So

lar

irra

dia

nc(

kW

/m2̂

)

0

6

12

18

24

30

36

42

48

54

PV

arr

ay p

ow

er

(kW

)

Solar irradiance Clean module power Dirty module power

Comparison of power production of two 60 kW PV system at same location (SERT) Measuring period 11/03/10 – 24/03/10

Experiment condition • Clean PV module of both system in the beginning, leave both system for one month, clean one 60 kW system • Clean module power: cleaning one time/week • Dirty module power: no cleaning about one month





0

30

60

90

120

150

180

210

240

270

300

330

360

11/03/201012/03/201013/03/201014/03/201015/03/201016/03/201017/03/201018/03/201019/03/201020/03/201021/03/201022/03/201023/03/201024/03/2010 Average

Date

PV

arr

ay e

ne

rgy (

kW

h)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

So

lar

rad

iatio

n (kW

h/m

2̂)

Clean array energy Dirty array energy Solar radiation

Source: SERT

Comparison of energy production of two 60 kW PV system at same location (SERT) Measuring period 11/03/10 – 24/03/10

Clean PV array produced energy higher than dirty PV array about 4-10% different (6% in average from this experiment). “sufficient regular cleaning need in PV power system”









• PV system maintenance








PV modules cleaning








System commissioning-PV string inspection








System commissioning-PV string inspection








We design…We build…We

inspect…We take care …We

test…We are Solar Man

Thank you - Khob Khun Krub





OUR ACTIVITY ON PV SYSTEM WORK

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09 Design Solar Rooftop