微波工程期中報告Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier

Hae-Chang Jeong#, Hyun-Seok Oh#, Abdul-Rahman Ahmed #, Kyung-Whan Yeom#

# Dept. Radio Science and Engineering, Chungnam National Univ., Gung-dong, Yuseong-gu,

Daejeon, 305-764, Republic of Korea

出處 : Proceedings of APMC 2012, Kaohsiung, Taiwan, Dec. 4-7, 2012

學生 : 碩研電子一甲 MA130111 李偉齊

ABSTRACT

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In this paper, a design of X-band (9~10 GHz) 40 W Pulse-Driven GaN HEMT power amplifier is presented.

The selected active device is a commercially available GaN HEMT chip from TriQuint.

The optimum input and output impedances of the GaN HEMT are extracted from load-pull measurement using automated tuner system from Maury Inc.

And load-pull simulation using nonlinear model from TriQuint.

The combined impedance transformer type matching circuit of the power amplifier is designed using EM co-simulation.

The fabricated power amplifier which is 15×17.8 mm2 shows an efficiency of above 32%, power gain of 8.7~6.7 dB and output power of 46.7~44.7 dBm at 9~10 GHz with pulse width of 10 μsec and duty of 10 %.

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EVALUATION OF THE SELECTED GAN HEMT CHIPFigure 1 shows the selected TGF2023-10 GaN HEMT chip from TriQuint Semiconductor which is supplied as a bare chip. The separated gate pads and the combined drain pad are located on the top side of the chip.

According to the datasheet, the chip provides a saturated power of 38 W at 10 GHz with a drain voltage of 28 V and quiescent drain current of 1 A.

The appropriate DC drain voltage of 28~32 V is recommended. The optimum impedances in datasheet are given at a 28 V DC drain voltage and a frequency of 10 GHz, conditions that differ from our specification of 30 V DC drain voltage and a frequency of 9.5 GHz.

We devised a novel calibration to move the reference plane and successfully obtained the optimum impedances, which are listed in Table I. From Table I, the optimum impedances computed from the load-pull simulation are quite close to the load-pull measured impedances.

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DESIGN OF POWER AMPLIFIERFigure 2(a) shows the structure of the output matching circuit and the impedances at each stage are shown in Fig.2(b). First, a pair of two impedance transformers including the bonding ribbons is matched to impedance ZB.

Thus, impedance ZA becomes 4 times the load optimum impedance which includes the S-parameter of bonding ribbons simulated using HFSS, ZL+Zr. The value of impedance ZB is set to 200 ohms. Using impedances ZA and ZB, the electrical length and impedance θ1 and Z1 respectively, can be determined as shown in Fig. 2(b).

Then the parallel combined values of the impedance become ½ ZB as shown in Fig. 2(b) and this impedance should be matched to ZC of 100 ohms to yield the parallel impedance value of 50 ohms using a quarter-wave impedance transformer.

Similarly the input matching circuit can be constructed as shown in Fig. 2(a) and the corresponding impedance values can be computed.

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Figure 3 shows a layout of the power amplifier module on the gold plated CuW carrier of thickness 1 mm.

The initial microstrip dimensions corresponding to the transmission lines Z1, θ1 and Z2, θ2 are optimized using co-simulation with EM simulations in the circuit domain.

The impedances are optimized to give a close agreement with the computed impedances from the load-pull measurements in Table I.

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FABRICATION AND MEASUREMENT

Figure 4 shows the fabricated power amplifier module.

A GaN HEMT chip and substrate were attached to CuW carrier using Au/Sn preform.

The assembled GaN HEMT power amplifier carrier is mounted on the fixture as shown in Fig. 4.

Figure 5 shows the comparison of the measured output power and PAE of the power amplifier for the pulse duration with those of the simulated using the large signal model at a frequency of 9.5 GHz.

The measured data are marked by the symbol ×. The saturated output power is 46.3 dBm, and the maximum PAE is 35.7%.

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Figure 6 shows the output power at the fixed input power of 36 dBm for the passband frequency.

The output power is 46.7~44.7 dBm, and the PAE is 35.5%~32.5% at the frequency of 9~10 GHz. The measured output power at the center frequency is about 46.3 dBm, and the measured PAE is about 35.7%.

The simulated PAE shows a maximum near the center frequency 9.5 GHz while the measure PAE is almost flat for the bandwidth of 1 GHz.

The quiescent drain current is set to 100 mA because the quiescent DC current of 1A corresponds to 100 mA in the 10% duty cycle pulse driven condition.

The quiescent drain current was set by adjusting the gate voltage.

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From Fig. 5, the measured PAE show some significant difference from the simulation results at higher input powers.

The discrepancies between the measured data and simulated data at higher input powers are believed to come from inappropriate heat dissipation.

However, the nonlinear model does not reflect temperature change.

As the duty decreases, thediscrepancies were reduced and this is shown in Fig. 6.

As shown in Fig. 6, the measured PAE at the pulse driven condition of 5 μsec pulse width and 1.67% duty is observed to be close to the simulated PAE.

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CONCLUSIONWe demonstrated the design of X-Band 40 W pulse-driven GaN HEMT power amplifier.

The adopted active device for the power amplifier is TGF2023-10, 50 W GaN HEMT chip of TriQuint.

Automatic load-pull system of Maury was used for extraction of optimum impedances and evaluation of the selected device.

The combined impedance transformer type matching circuit for power amplifier is designed based on EM co-simulation using the optimal impedances.

The fabricated power amplifier with 15 x 17.8 mm2 shows efficiency of above 30%, power gain of 8.7 ~ 6.7 dB and output power of 46.7~44.7 dBm at 9~10 GHz with pulsed-driven width of 10 μsec and duty of 10%.

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心得

合併阻抗變壓器型匹配電路進行功率放大設計基於電磁協同仿真使用的最佳阻抗

功率放大器是採用有源器件 TGF2023-10 ， 50 W 的 GaN HEMT TriQuint的芯片