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IntelliSuite 8.5What’s new?
Tools for MEMS Professionals
New in v8.5
Clean Room Process visualization.
RECIPE 3D & IntelliEtch3D RIE/ICP/BOSCH etch simulation. Ab initio wet and dry etch simulation.
Synple 23D System Modeling. New elements, improved bus based interface.
3D Builder Bullet proof, one click, all-hex meshing.
MultiphysicsFluid structure interaction, faster engine, multi-processing, fast impedance extraction.
Modern interfaceClean, customizable, expressive UI.
Clean Roomintroducing …
your virtual fab
What is Clean Room?
Process simulation and visualizationState of the art 3D process modeling
RECIPERIE/ICP/Bosch etch simulation STS etch database
IntelliEtchAb initio based etch modeling wet and dry etch modeling
MEMaterialMaterial databases & process optimization
IntelliMaskEasy, yet powerful mask layout capabilities. Scripting based automated layout
IntelliFABProcess traveller creation and visualization. Auto meshing capabilities
Process FlowSimulation
Visualize Complex process flows
Courtesy, Prof Tim Dallas, Texas Tech
Visualize Complex process flows
Courtesy, Prof Tim Dallas, Texas Tech
Visualize Complex process flows
Courtesy, Prof Tim Dallas, Texas Tech
Visual complex mems
Quick cross
sectioning
Benefits:
Process Debug
Failure Analysis
Review Sessions
Operator Training
Dynamic cross sections
Courtesy, Prof Jason Clark, Purdue University
MUMPS, 3 level Poly SUMMiT V, 5 level Poly
Courtesy, Prof Tim Dallas, Texas Tech University
Photo realistic rendering
Texas Instruments, DLP Mirror Visualization
Etch & release modeling
Full CMOS simulation
Full CMOS simulation (2)
Automated Hex Meshing
… And Tet Meshing
Future
• Lithography processes
• Photoresist profiles (SU-8, PDMS)
• Deposition processes (CVD, Evaporation, sputtering, plating)
RECIPE & IntelliEtch
State of the Art Etch Simulation
RECIPE & IntelliEtch
RECIPE 3DRIE, ICP and Bosch Etch simulator
Validated databaseExperimental etch database Rigorous validation experiments
Real world usagePredict and fine tune etch lag, sidewall angle and footing
IntelliEtchAb initio wet and dry etch simulator. Atomistic simulations
Export to FEADirect export to IntelliSuite tools
Real world usagePredict high order planes, surface morphology, design corner compensations and composite etches
RSM derived etch database
Response surface matrix Etch rate as a function of APC and Coil Power
Etch characterization experiments (1)
Etch characterization experiments (2)
ICP/BOSCH ETCHING
Ion assisted etch
Reactive Ion Etching
Combination etch: Isotropic+Bosch
IntelliEtch
Atomistic Etch Simulator
IntelliEtch
Validated simulatorDetailed experimental backing
Ab initio effectsFirst principle based etcher, includes effects of steric interaction, backbond weakening, impurity micromasking
Composite processingEffects of multi-masking, multiple process steps
SpeedFast simulation speed. Results in 5-30 minutes depending upon resolution
Export to FEADirect export to IntelliSuite tools
Validated databaseDatabase for etching based upon pioneering work of Dr Sato at U Nagoya
Experimental validation
Etched Silicon Sphere Etch Results Simulation Results
Dr. Sato et al, U Nagoya Japan
Experimental validation
Sphere etching results
Experiment, 34 wt% KOHSimulation: 30 wt% KOH
Experimental validation
110 um100 min
166 um150 min
225 um200 min
166.39 um152.54 min
225.82 um205.64 min
110.21 um102.38 min
SEM Pictures © 2001 Gesselschaft fur Mikroelektronikan-wendung Chemnitz mbH.
Experimental validation
SEM Pictures © 2001 Gesselschaft fur Mikroelektronikan-wendung Chemnitz mbH.
166 um150 min
189 um170 min
225 um200 min
226.94 um213.60 min
190.63 um181.16 min
166.43 um159.53 min
CPU Time244 s
Experimental validation
SEM Pictures © 2001 Gesselschaft fur Mikroelektronikan-wendung Chemnitz mbH.
166 um150 min
166 um150 min
56 um50 min
168.33 um161.56 min
56.11 um61.28 min
168.33 um161.56 min
Experimental validation
110 um100 min
166 um150 min
225 um200 min
56 um50 min
166.40 um139.62 min
110.93 um95.27 min
226.13 um190.44 min
56.89 um51.27 min
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56 um50 min
Ab initio effects
Adsorption of impurities: Leads to micromasking effects
Sterif effects and back bond weakening: Atomic level (first principle) simulation are needed to compute these effects
Partial OH termination Full OH termination
Steric interaction: OH-OH Multiple steric interactions: OH-H at FN and SN
M. A. Gosalvez et al.: Multiscale modeling of chemical etching 471
Fig. 4 – Comparison between (a) experiment [3], (b) simulation using the “bond-weakening” approachand (c) simulation incorporating the e!ect of indirect second neighbours.
ond neighbour). However, if the chosen atom has two or three first neighbours, the rigidityof the bond configuration leads to a significant interaction between the hydroxyl group andthe terminating hydrogen, e!ectively reducing the probability with which the hydroxyl willactually terminate the dangling bond in the presence of an indirect second neighbour. Theseconsiderations imply that the probability of removal of a surface atom should be multipliedby the probability with which each hydroxyl group will actually terminate the correspondingdangling bond depending on the local environment.
We have discussed here the interaction between a hydroxyl terminating the target atomand a hydrogen terminating an indirect second neighbour. Similarly, we can consider theinteraction with another hydroxyl. The e!ect of having both interactions can only be discussedin a frame that considers the amount of surface coverage by hydroxyl groups [7]. However,the conclusions of the present study are not a!ected by considering an average of the e!ectof both interactions.
In order to use the above results in kinetic Monte Carlo simulations, we consider theprobability of removal of a surface atom as given by the Boltzmann expression p = e!!E/kBT ,where "E is defined as the energy excess of the average energy per bond E (defined below)over a critical energy Ec:
"E = kBT ln!
1 + e(E!Ec)/kBT"
! max(0, E " Ec).
The critical energy Ec acts as a threshold below which bond-breaking occurs with probabilityp ! 1. The average energy per bond E is assigned to the chosen surface atom depending onthe neighbourhood configuration, and is defined in terms of the energy matrix !ij discussedpreviously. We identify each surface atom with its neighbourhood configuration, referredto by (n;m1,m2, . . . ,mn; l), meaning that the chosen surface atom has n first neighbours(n = 1, 2, 3) and each of the n first neighbours has itself mj first neighbours (j = 1, 2, . . . , n;mj = 1, 2, 3, 4), l of which are indirect second neighbours to the chosen atom. The averageenergy per bond E for atom (n;m1,m2, . . . ,mn; l) is then defined as
E =1n
n#
j=1
!(4!n),(4!mj) + l · e · (1 " "1n).
The first term corresponds simply to the average of the sum of the energies of the bonds tothe n first neighbours, the energy of each bond being obtained by looking at the number of
110 um100 min
166 um150 min
56 um50 min
Ab initio effects
Experimental results: Wagon wheel study
Simulation: No ab initio effects Simulation: With ab initio effects including back-bond weakening and steric interaction
Surface morphology prediction
Pyramid like morphology on 100 Sisubject to wet anisotropic etching
Simulation results predict pyramid formation
Arbitrary Cut Planes <533>to understand the physics
Surface morphology prediction
1 Micromasking of apex2 Floor moves down fast3 Edges are stable4 Facets are very stable
Hillock formation prediction
Surface morphology prediction
Relation between pyramidal hillocks on (100) and polygonal steps on (h h h+2)
Higher order plane etching
D. Saya, Sensors & Actuators A95 (2002)
Simulation results
Simulate composite MEMS processes
Composite processes, Shikida Mitsuhiro, J. Micromech. Microeng. 14
Combination of multi-step mask transfers, oxide and nitride layers, sacrificial layer deposition and wet etching and DRIE processes.
Composite MEMS processes for micro valves. Combination of DRIE and wet etching.
A. Baldi, Sensors and actuators B 114 (2006)
Simulate composite MEMS processes
Simulate composite MEMS processes
Non flat surfaces: simulate roughness and waviness effects
Output to FEA
Interface with analysis tools: Direct export to IntelliSuite and other industry formats
Modern interface
Easy to use, user focused interface
Bullet Proof All-Hex Mesher
Mesh complex geometries in seconds
One click meshing
Bullet proof all hex meshing
Mesh Complex GeometriesEasily deal with arbitrary non-manhattan geometries
Automatically deal with multi-layer connectivity
Planarized Conformal
Meshing time: 20 seconds
Mask to mesh
Self Adapting Meshing
Original Self AdaptingMesh
Dramatically Reduce Compute Times
Specify layers of interest(Ignore Dimples etc)
Specify Processing Intent Specify layer thickness & elevation
(Poly0, Poly1 etc)
Fastfield Multiphysics
Fluid Structure InteractionCoupled 3D Fluid-Structural-Piezo
Improved sub-modelingFaster sub-modeling capabilities
Fluidics3D electrowetting simulations. Advanced chemical reactions. Faster fluidics engine
Fast Impedance Extraction3D MoM based fast field full wave solver
Fast BAW/SAW SolverParallelized 3D Impedance extractor. Accurately capture phase ripple effects.
64 bit, MultiprocessingShared memory processing. 3-6X speed improvements. Handle larger problem sizes. Faster file operations.
What is Fastfield Multiphysics?
Coupled solver formulationANSYS, Algor, Comsol, etc are all pure Finite Element tools
Best solver for each physics domainBoundary Element Method (BEM): Electrostatics, Electromagnetics
Finite Element Method (FEM): Thermal, Mechanical and Electromagnetics
Volume of Flow (VoF) and Finite Volume (FV): Fluidics, Electrokinetics, Chemical Reactions
Advanced pre-correction and solver techniquesPre-corrected FFT (pFFT++), GMRES, Arnoldi, OpenMP based multi-processor solvers
Why Fastfield Multiphysics?
Speed and efficiency2-10X Faster than pure FEA formulation (Algor, Ansys, Comsol, etc)
Handle large real world problems
Surface meshing vs volume meshesInternal volumes, air gaps, etc do not need to be meshedEase of meshing, no costly re-meshing during deformation
Ease of convergenceQuickly run your analysis without convergence issuesDeal with large deformations, contact and post-contact without convergence issues
Flow evolution in a piezoelectric membrane micro pump
Example: Valveless piezoelectrically actuated micropump
Outlet
Inlet
PZT actuated membrane
Flow chamber
Piezo-acoustic wave generation
Multi-processor enabled BAW/SAW simulationFast impedance and phase ripple calculations
1 2
Phase ripple ina BAW device
Fast ImpedanceExtraction
Enhanced Chemical ReactionMicrofluidics with enhanced transport kinetics1 2
Two reactants meeting at the junction and reacting to form a new analyte. Support for multivalent reactions is new in v 8.5
Enhanced ion drag calculations allows you to optimize elbow turns to minimize concentration skews
Enhanced transport behaviorMultivalent Ion drag calculations in electrokinetic transport
Concentration skewing Minimized concentration skewing
Electrowetting on dielectric (EWOD)3D Electrowetting calculations
3
Droplet moving around a pre-set track (top view) Droplet fission (top view)
ElectroMagnetics
3D FEA and MoM solverSeparate solvers for Full Wave, Quasistatic & Magnetostatic solutions
Self adapting meshFaster solution with better convergence
Coupled Mech-EMag Only coupled tool on market today
Fast Impedance ExtractionWideband impedance calculations. 0-40 GHz without any issues.
Standard formatsExport directly to Touchstone and SPICE
64 bit, MultiprocessingShared memory processing. 3-6X speed improvements. Handle larger problem sizes
SYNPLE 2Schematic driven
design
Synple v2
Revamped UIAuto wiring, easy to read schematics. Reflective UI. Simplified parameter entry.
Multiphysics BusNew multiphysics bus based wiring. No more messy wiring!
3D System modelingVisualize your results in 3D. Direct export to VisualEase.
ManagersNew material, technology and simulation managers
Multiphysics based elementsCoupled Thermal, Electrical, Mechanical, Piezoresistive and Electronic simulation
Designed for MEMSFirst schematic tool specifically designed for MEMS
Schematic editor designed for MEMS
Modern interface
Technology managers
Global Layer PropertiesAutomatically included in relevant calculations
Material DatabaseMaterial properties are automatically inserted into
relevant calculations
Synplified data entry
Set Layer and Material Simplified parameter entry
Geometry reflected in schematic!
Analysis VisualizationFull 3D Animation of System Simulations
3D Visualization of System Simulation
1:1
Modern InterfaceExpressive toolbars & icons
Pixel perfect interfaces
Entities
Model
Loads
BoundaryConditions
Meshes
Info
Layers
Materials
AmbientConditions
GlobalDefinitions
Document Icons
Attention to detail = Pleasurable, consistent experience
Refined User Experience
Direct Manipulation Updated Graphics Engine Customize toolbars, menus, keyboard shortcuts
Model and Result Explorers
Contextual Help SystemEasy to use, online help. Extensive Tutorials.
Vista ReadyDesigned for Windows XP, 2000 and Vista
Significant update across the board
Process visualizationEtch simulation
Fastfield MultiphysicsRobust Meshing
Schematic based designRevamped UI
Thank you
ありがとう•謝謝 • ध"यवाद
Grazie •Merci • Gracias • Danke •Obrigado • Dank U •Terima Kasih
www.intellisense.com