NEW HITACHI IGBT MBN1800FH33F 3.3KV 1800A

IGBT MODULE Spec.No.IGBT-SP-16020 R0 P1

MBN1800FH33FSilicon N-channel IGBT 3300V F version

FEATURES

Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-throughAdvanced Trench High conductivity IGBT.

Low driving power due to low input capacitance with trench MOS gate.

Low noise recovery: Ultra soft fast recovery diode.

High Current rate Package.

Low Rth(j-c) & low stray inductance.

RoHS

ABSOLUTE MAXIMUM RATINGS (Tc=25oC)

Item Symbol Unit MBN1800FH33F

Collector Emitter Voltage VCES V 3,300

Gate Emitter Voltage VGES V 20

Collector Current DC IC A 1,800

1ms ICRM 3,600

Forward Current DC IF A 1,800

1ms IFRM 3,600

Junction Temperature TjoC -50 ~ +150

Storage Temperature TstgoC -50 ~ +150

Isolation Voltage VISO VRMS 10,200(AC 1 minute)

Screw Torque Terminals (M4/M8) - N·m 2/10 (1)

Mounting (M6) - 6 (2)

Notes: (1) Recommended Value 1.80.2/91N·m (2) Recommended Value 5.50.5N·m

ELECTRICAL CHARACTERISTICS

Item Symbol Unit Min. Typ. Max. Test Conditions

Collector Emitter Cut-Off Current ICES mA - - 0.6 VCE=3,300V, VGE=0V, Tj=25oC

- 40 100 VCE=3,300V, VGE=0V, Tj=150oC

Gate Emitter Leakage Current IGES nA -500 - +500 VGE=20V, VCE=0V, Tj=25oC

Collector Emitter Saturation Voltage VCEsat V 2.5 2.85 3.5 IC=1800A, VGE=15V, Tj=150oC

Gate Emitter Threshold Voltage VGE(th) V 5.5 6.5 7.5 VCE=10V, IC=1800mA, Tj=25oC

Input Capacitance Cies nF - 132 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC

Internal Gate Resistance rg Ω - 1.3 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC

Switching Times

Rise Time tr

s

- 0.3 - VCC=1,800V, Ic=1800A Ls=100nHRG(on/off)=4.7Ω/5.6Ω (3) VGE=15V, Tj=150oC

Turn On Time ton - 1.1 -

Fall Time tf - 1.8 -

Turn Off Time toff - 4.0 -

Peak Forward Voltage Drop VF V 2.2 2.6 2.9 IF=1800A, VGE=0V, Tj=150oC

Reverse Recovery Time trr s - 0.7 - VCC=1,800V, IF=1800A, Ls =100nH Tj=150oC

Turn On Loss Eon J/P - 3.7 - VCC=1,800V, Ic=1800A, Ls =100nH

RG(on/off)=4.7Ω/5.6Ω (3) VGE=15V, Tj=150oC

Turn Off Loss Eoff J/P - 3.3 -

Reverse Recovery Loss Err J/P - 2.4 -

Stray inductance module LSCE nH - 12 -

Thermal Impedance IGBT Rth(j-c) K/W - - 0.0075 Junction to caseFWD Rth(j-c) - - 0.0125

Contact Thermal Impedance Rth(c-f) K/W - 0.005 - Case to fin

I2t value I2t kA2s 1000 - - Tj,start=150oC, 10ms, VR=0V, half-sinewave

Notes: (3) RG value is a test condition value for evaluation, not recommended value. Please, determine the suitable RG value by measuring switching behaviors.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

* ELECTRICAL CHARACTERISTIC values according to IEC 60747–2 IEC 60747–9

DWN. H.Koguchi ’16.04.15

CHKD. T.Kushima ’16.04.15

APPD. Y.Toyoda ’16.04.15

http://www.amepower.com/


STATIC CHARACTERISTICS

0

600

1200

1800

2400

3000

3600

0 2 4 6

Coll

ecto

rC

urren

t,Ic

(A)

VGE=15V

9V

Tj=25oC 13V

Collector to Emitter Voltage, VCE(V)

Collector Current vs.Collector to Emitter Voltage

TYPICAL

0

600

1200

1800

2400

3000

3600

0 2 4 6

Coll

ecto

rC

urren

t,Ic

(A)

VGE=15V

9V

7V

7V

Tj=125oC 13V

11V

11V



TYPICAL

0

600

1200

1800

2400

3000

3600

0 2 4 6

Coll

ecto

rC

urren

t,Ic

(A)

VGE=15V

9V

7V

Tj=150oC 13V

11V



TYPICAL

0

600

1200

1800

2400

3000

3600

0 5

Fo

rw

ard

Cu

ren

t,IF

(A)

VGE=0V

Tj=25oC

1 2 3 4

Tj=150oC

Tj=125oC

TYPICAL


MBN1800FH33F

Forward Voltage, VF(V)

Forward Voltage of free-wheeling diode



DYNAMIC CHARACTERISTICS

0

0 3,600

Tu

rn

-on

Lo

ss,

Eo

n(J

/pu

lse)

600 1,200 1,800 2,400 3,000

Collector Current , Ic(A)

Turn-on Loss vs.Collector Current

0

8In ducti

ve Load 8

Tj=150oC

7 7

6 6

5

4

3

2

1

Tj=125oC

5

4

3

2

1

0 3,600

Tu

rn

-off

Lo

ss,

Eo

ff (

J/p

uls

e)

600 1,200 1,800 2,400 3,000

Collector Current, Ic (A)

Turn-off Loss vs.Collector Current

InductiveLoad

Tj=150oC

Tj=125oC

TYPICAL TYPICAL

10 10

Conditions Conditions

Vcc=1800V Vcc=1800V9 RG(on)=4.7Ω 9 RG(off)=5.6Ω

VG= 15V VG= 15V

Ls=100nH Ls=100nH

0

1

2

3

4

5

0 3,600

Reverse

Reco

very

Lo

ss, E

rr

(J/p

uls

e)

TYPICAL

Conditions

Vcc=1800V

RG(on)=4.7Ω VG= 15V

Ls=100nHInductiveLoad

Tj=150oC

Tj=125oC

600 1,200 1,800 2,400 3,000

Collector Current , IF (-Ic) (A)

Recovery Loss vs.Collector Current


MBN1800FH33F



Capacitance vs. Collector to Emitter Voltage QG-VGE CURVE

1

10

100

1000

0.1 1.0 10.0 100.0

Cie

s,C

oes

,C

res

(nF

)

Collector to Emitter Voltage, VCE (V)

Capacitance vs. Collector to Emitter Voltage

Conditions

Tj=25oC

f=100kHz

TYPICAL

Cies

Coes

Cres

QG-VGE curve

-15

-10

-5

0

5

10

15

-8 -6 -4 -2 4 6 8

VG

E(V

)

0 2

QG (C)

:Ls=80nH, VCC=1800V,

IC=1800A,VGE=+/-15V, Tj=25oCTYPICAL

Safe Operating Area

Reverse bias safe operation area(RBSOA)

0

500

1000

1500

2000

2500

3000

3500

4000

3500

Co

llec

tor

Cu

rren

t,IC

(A)

0 500 1000 1500 2000 2500 3000

Collector to Emitter Voltage,VCE (V)*Defined as auxiliary terminal

Conditions

Vcc 2200V, IC 3600A,

RG 5.6, VGE= 15V,

-50oC T 150oC,Ls 100nH

on pulse width 10s

0Definition of RBSOA waveform

IC( to be turned off ) VCE( spike Voltage )

Ic Vce

t

0

500

1000

1500

2000

2500

3000

3500

4000

0 3500

IR(A

)

500 1000 1500 2000 2500 3000

VR (V) (Measured at auxiliary terminal)*Defined as auxiliary terminal

Reverse recovery safe operationarea(RRSOA)

Conditions

Vcc≦2200V,IF≦3600A,

di/dt≦11kA/us,

-50oC ≦Tj≦150oC,

Ls≦100nH,on pulse width ≥10us

Pmax=3.6MW

Conditions Conditions: Ls=100nH, VCC=1800V,


MBN1800FH33F



TRANSIENT THERMAL IMPEDANCE

0.0001

0.001

0.01

0.1

0.001 0.01 1 10

Tra

nsie

nt

therm

al

imp

ed

ance

:Z

th(j-c

)(K

/W)

0.1

Time : t(s)

FWD

IGBT

Maximum

Transient Thermal Impedance Curve

Curve approximation model

(Zth[n]*(1-exp(-t/th[n])))

n 1 2 3 4 Unit

th[n] 0.003 0.03 0.1 0.3 sec

Zth[n,IGBT] 1.52E-03 8.82E-04 4.60E-03 5.03E-04 K/W

Zth[n,Diode] 2.36E-03 1.69E-03 6.99E-03 1.47E-03 K/W


MBN1800FH33F



OUTLINE DRAWINGS

8

16

8

Fig.1 Outline Drawings

EE

G

CC C C

E E

Fig.2 Circuit diagram

Unit in mm

Weight : 1550 (g)


MBN1800FH33F



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“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/

HITACHI POWER SEMICONDUCTORS

Notices

1.The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are advised to contact Hitachi sales department for the latest version of this

data sheets.

2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3.In cases where extremely high reliability is required (such as use in nuclear power

control, aerospace and aviation, traffic equipment, life-support-related medical

equipment, fuel control equipment and various kinds of safety equipment), safety should

be ensured by using semiconductor devices that feature assured safety or by means of

users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department

staff.

4. In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data sheets. Hitachi

assumes no responsibility for any intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5.In no event shall Hitachi be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6.No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi Power Semiconductor Device, Ltd.

7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part,

without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.

8.The products (technologies) described in this data sheets are not to be provided to any

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and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.


MBN1800FH33F

http://www.hitachi-power-semiconductor-device.co.jp/en/



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NEW HITACHI IGBT MBN1800FH33F 3.3KV 1800A